SCIENTIFIC ABSTRACT CZABAK, OREST - CZAJKA, BOLESLAW

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000509430006-4
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: January 3, 2017
• Document Release Date: July 28, 2000
• Sequence Number: 6
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

CZABAK, Orest
Analysis of fetal almormalities with special consideration on some
pathogenic factors. Ginek. pol. no.4;425-434 162.
1. Z II Kliniki Poloznictwa i Chorob Kobiecych P14 w Warszawie Kierownik:
Icliniki: prof. dr med. I. Ros".kowski.
(PREGNANCY 'COMPLICATIOINS) (ABNOWALITIE, S)

CZABAN, W.; PAWLOWSKI, Z.
Phyalopatbology of focal infection of dental origin and its
clinical picture. Polskie areb. med. wewn. 25 no.6:1163-1176
1. Z III Kliniki Chor. Wown. A.M. w Lodzi. lierownik: prof.
dr. med. W. Markert x III Kliniki Chir. A.M. w Lodzi. Kierownik:
prof. dr. med. W. Toraa9zewicz, Lodz, ul. Kopcinskiego 34.
(FOCAL INFECTION,
dent. (P01))
(T ' , diseases,
focal infect. (Pol))

CZABAN, W.
*i~Wof the focum of Infection on hvn" pbysI0Path0lQ47* Polski
tygod. lek 7 no. 19:614416 12 May 1952. (CLML 22:5)
1. Of the Third Internal Clinic (Head--Prof. W. Markert, M.D,) of
Lods Medical AcadezW.

ZABLOCKI, Bernard; KOTXM, Krystyna, GOSCICKI,, Januoz" CUBAN, Wanda
9 -- -
Passive hemagglutinatlon reactions with sera from convalescent children
after rheumatic fever by using 6 now antigenic fractions isolated from
streptococcus group 1; Pedint. Polska 33 no.26.165-170 F813 58i
1; T Zakladu Mikrobiologii Szozegolowej Univeraytetu Lodzkiego
Kierownik; prof. dr B. Zablocki,* Adres: Lodz, Aj; loacinszko 52 M-8)9
(MMMTIC. nIM. Immignol
passive hemagglutination reaction with convalescent
serum using antige-nic fractions-from streptoc;A (Pol))i
(HERAGGIVTMTIDN,
passive' hemagglutination, with convalescent serum from
rheum* fever using antigenic fractious from streptoot'
A.'(Pol))
4E,-,

-ZAHOR Z.; CZARANOVA,_3f,-;_. techniky spolupracovala MACHOVA, M.
Spontaneous medical calcir-osis and arteriosclerosis of the aorta
in female rats following repeated pregnancies. Sborn. lek. 64
no.12:353-357 D 162.
1. 11 patologicko-anatoiieky ustav fakulty vaeobeeneho lekarstvi University
Karlovy v Praze~ prednosta prof. dr. V. Jedlicka.
(PREGNANCY ANIMAL) (AORTIC DISEASES)
(ARTERIOSCLEROSIS) (CALCIFICATION)

ZAHOR,Z.; PZAIB,A1.40VA,V.
Malformations of rat aortas due to low-dosage getal lathyrism.
Cor vasa 6 no,1:35-43 164
1. The Second Department of Pathology., Medical Faculty, Charles
University, Prague.7

O.ZABANOWSKIs J.
Thorn-Bayles test in the determination of adrenal insufficieucy in
diptheriao Pediat. pplaka 27 no- 9:1029-1040 Sept 1952. (GIXL 23:3)
t ~
1, Of the Pediatric Clinic (Read-Prof. W. Bujak, M. D.) of Krakow
Kedical Acadeow,

CZABANDWSKI, Jultuez,
2~irombophlebitls of vanx lienalls In view of a case observation.
Poiski tygod.lak. 10 no.25:838-84,0 20 June '55.
1. Z OddzIalu Chorob WewnetrziWch Sspitala, Misjokiago jffr.l w
Bytomiu; dyrektor 3spitala: dr. W.Xubiety; ordynator Gadzialu:
dr. Z. Mlynarski) Irskow, U1.18 Stycznia li/L>O.
(SPLUN. blood supply
splanic vein thrombophlobitte)
(THRDMBOPHLIBITIS
eplenic vein)

3113-JUS7,
Names
Coiuitry: Poland
Academic Degrees:fn-ot givqr7
Div~sion o-f Interngl, Diseases (Oddzial Chorob Wemnetr-mych),
Af filiationiil,~Mncl pal Hospital No. One Wzpital 1.',iejski No 1.), !~ytom;
DireclUor: '-f. KUMISTY, Dr. med; - Ordynator: Z. Dr. med
76 1 8 ~C
Source: I.-I"arsaw , rr-emlad Leharski, Vol XVII, Ser II, No 81 30 - 9.
.11 X! pp .3
Data: "Diagnostic Difficulties of'-Endocarditis."
.72-,

CZABANSKip--B.p zgr.* inz,
Fraquencj converter for three-phase current, Machanik 35
no-W01-302 YV 162.
I1 1. Jarocinaka Fabryka Obrabiarekp Jarocin.

GSASZAR, Akos; HAJOS, Gyorgyj IWPES, Aladar,- CZACIJ.. Lasz1o; HAJU, Janos;
FRIO , Ervin
Solving mathewtical problems. Mat lapok 15 no..1/3s242-246 164
1. FAitor, "Mathematikai Lapok" (for Ijos).

V-300 ~&hd 103 9~ 115-0) N 6o) P/47/60/011/002/001/003
D321/D304
AUTHOR: Czachor, Andrzej
TITLE: A survey of methods for measuring the lifetime of
excess minority carriers in germanium and silicon
PERIODICAL: Postjpy fizyki, v. 11, no. 2, 1960, 169-190
TEXT: This is a critical survey of the more important methods of
measuring the lifetime of minority barriers. The article first
provides a short introduction to the theory of semiconductors. The
n-type of semiconductor is used as a model in the theoretical con-
siderations of the lifetime ,e of the excess minority carriers. The
author states that the behavior of the excess holes in a semicon-
ductor is fully described by the equation of continuity, the simple
form of which, as given by Eq. (1)
ap, + D V 2p
27 P
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he considers to be adequate for the purpose of analysis. A certain
number of excess electron-hole pairs is introduced into the sample
and the concentration p of holes, i.e. of minority carriers, is
measured as a function of either time or space. Z is the lifetime,
Dp diffusion constant, g = the electron hole pair generation
term, usually taken as equal to zero for experimental purposes.
As based on Eq. (1), the author divides all knovin methods of mea-
surements into two groups: a) Methods utilizing solutions of Eq.
(1) in the time domain; b) Methods utilizing the space domain of
same. Three effects are stated to complicate the methods of mea-
suring the lifetime of minority carriers, and consequently methods
of obviating them are discussed: 1) Surface recombination. This
effect is responsible for the lifetime IV being changed into the
effective lifetime Zef as given by Eq. (3)
1 + (3)
T
e IFS-Urf I
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where T 1 is the term introduce.d by the surface recombination.
surf
The notation S,for the speed of surface recombination is intro-
duced and some results for the value of s as given by various
authors are discussed. The value for a given 'by B.G. Kalashnikov
(Ref. 21: Zhu. Tekh. Fiz. 26,;241, 1956~ for n-type germanium,
havi it surface finished with 30 % H.;~O
CM7 s - 2., was approximately
50 sec. 2) Trapping and non-linearity of the collector signal.
The theory of trapping and various trapping models are discussed,
includi .ng that of B.G. Kalashnikov (Ref. 21: Op.cit.), who treated
the trapping effect as the combined effect of several trapping
C>
layers. The non-linear dependence between the signal amplitude and
the minority carrier concentration in the vicinity of the collec-
tor contact is stated to occur both in germanium and silicon and
is due to the fact that the concentration of minority carriers
near the collector is too small. To obviate the difficulty of mea-
suring the lifetime of excess carriers, a constant illumination of%Y\
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the contact region is required. According to G.N. Galkin and V.S.
Vavilov (Ref. 11: Pribory i tekhnika 6ksperimenta, 4, 52, '1957)
and M.I. Iglitsyn, A. Kontsevoy and V.,Kudin (Ref. 19: Zhu. Tekh.
Piz. 27, 1425, 1957), the symmetrical signal is obtained when the
whole of the sample is being illuminated. The latter group of au-
thors claim that the modulation method of the conductivity of the
point contact is immune from the trapping effect and that true
lifetimes have been obtainedf using the method of, light spot in
conjunction with the-illumination of the whole sample (Ref. 19: Op,
cit.)..The measurement methods arey as previously mentioned, di-vi-
ded into two main groups based on time dependent effects and sta-
tionary (space domain) effects, The time dependent methods are di-
vided into: 1) Measurements of changes in the conductivity of the
samDle LIbstractor's note: Only English-language references are
mentioneg; 2) The delayed pulse methods. Within these N.F.
Durrant (Ref. 9: ?roc. Phys. Soc. 68B, 562, 1955) and G.N. Galkin
and V.S. Vavilov (Ref. 11: Op.cit.) have been'using the relation-
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ship of
h = h t-1/2 exp, (12)
0 -7,
where h amplitude of the delayed pulse,,ho = the.amplitudb of
the original pulsej t recombination time, t' = transit:time,
lifetime of minority carriers.,-This expression includes the
effect of diffusion. 3) Effects due to the rectifyina effect of
joint contacts. First E.M. Fell's method (R s 26; Phys. Rev., got
2701 1953) is mentioned. The Spitzer method as developed by W.G.
Spitzer, T. Firle, M. Culter, R. Shulman,,M.,Becher (Ref. 37: J.
Appl. Phys. 269 414, 1955) is stated to have been elaborated by
M.I. Iglitsyn, A. Kontsevoy, V. Kudin and A. Meyer (Ref. 18; Zhu.
Tekh. Fiz. 27, 1414, 1957) and M.I. Iglitsyn, A. Kontsevoy and V.
Kudin (Ref. 19: Op.ait.) both for germanium and silicon. The sta-
tionary (space domain) methods are grouped as follows: 1) The
light spot method. Various Western authors are cited with -tT-e
statement that the Haynes-Morton method as quoted by L.B. Valdes
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(Ref. 43: Proc. Instn. Radio Engre 40, 1420, 1952) has been also
used' by A. &it (Ref. 39: Zesz. naa. Pol. Warsz. No - 33, 41, 1957),
in which the carriers are generated by a light'time projected onto
the semiconductor surface. 2) The s-c current method. The measur-
ing'scheme is given in Fig . 157
Fig. 15.
Oh'
Av MAi Ohrn f
C 6 1, t ev
41~7C--
The photo diode is shorted by a resistance much-smaller than its
internal resistance. By measuring the voltage'across this resis-
tance the s-c current can be determined. if the carriers are
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generated at the surface, then the s-c current i is given by Eq.
(17) i = 2eg exp f- d -7
p LP
as cited by.G. Smirnov (Ref. 36: Zhu. Tekh.. Piz. 27 ' 2469, 1957),
where gp = the number of carrier pairs generated in unit time per
unit surface, d = distance from the surface to the p-n junction
and e = the charge of the electron, 1P = diffusion path# The sur--
veyed methods are all-bdsed on the direct comparison of the cdrr'ier
distribution as obtained experiihentally with that evaluated from
theoty. From ai~ong the remaining methods, the most successful has
pro-;~ed to be the'photo-magneto electric method as devised by A.
Kobus (Ref. 23: Zeez. nauk Pol. Wai~sz. No. 33, 21# 1957). The re-
sults obtained by various authors are summarized in Table III.
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Table III.
Method limits of application mean meas.
Ge Sip error
Method of Many
-6
(25) 10