SCIENTIFIC ABSTRACT G.M. FRANK - I. FRANK

• Document Type: CREST
• Collection: Scientific Abstracts
• Document Number (FOIA) /ESDN (CREST): CIA-RDP86-00513R000413530012-2
• Release Decision: RIF
• Original Classification: S
• Document Page Count: 100
• Document Creation Date: November 2, 2016
• Document Release Date: June 13, 2000
• Sequence Number: 12
• Publication Date: December 31, 1967
• Content Type: SCIENTIFIC ABSTRACT

fj
MAE I BOCK ELEWITATION SOV/5294
Akademiya nauk WSR. Institut b1olagichaskoy fiziki
Issledovaniye rannikh r*aktsiy organisma ne redistsionnoye votdaystviy* (Study of
Early Reactions of the Organism to Radiation Effects) Moscow., Izd-vo AN SSSR,
196o. 22o p. zrrat4L slip insertade 3,,000 copies printed.
Sponsoring Agency: PAndemlys. nauk SM. Institut biologicheskoy fizikie
Resp. FA.: GoMo T&~, Corresponding Xmber,, Acadmy of Sciences USSR; Ed. of
Publishing House: BV* Garien; Tech. Ids.'.V. Volkovs, and Ye.V. Makmi.
PURPOSE: This book is intended for radidbiologists.
COVEPAGE: This is a collection of nine articles by different authors on the effects
of radiation on life processes* The following m discussed: the relationabip
between reflector mechanisms and disturbances In hemodynamics; the marked diainu-
tion or total absence of hemo4ynmie reactions under soft irradiation upon pre-
limizary treatment of the sk1n vith novocaln; reflector-induced changes In the
central nervous system and the almost Instantaneous advent of fine physico-
chemical reactions following irradiati=$* changes in the stability of the
Card V3

Study of Early Reactions (Cont.) SOV/5294
erythrocyte level during the first several hours after Irradiationj blood albumin
changes after irradiation, occurring earlier than believed heretofore by scien,-
tists;and now and important data on tissue breathing and disturbances in the
physicochqmical properties of erythrocytes. N.N. Livehits., Doctor of Biological
Sciences, is mentioned. Each article is accompanied by references.
TABLE OF C
Preface (A. Lebedinskiyj
3
Frank, G.M. Introduction. Radiation as a Disruptor of Regulative
Controls of Life Processes 5
Nefedav, Yu.G. Disturbances In Blood Dynemics in Acute Radiation Injuries 14
Polivoda, A.I. Changes In the Elasticity and Hysteresis of Elastic-Type
Arteries Due to a Total X-Ray Zzposure 42
Card 2/3

Study of Early Reactiono (Cant.) SOV/5294
Veyze, L.G., and G.K. Frank. Changes in Blood Dynamics and Changes in the
'-r
Mechanical Propert, W-WlMtsad Vessels in Total and Local Irradiation 60
Gamburtsev, A.G. Changes in the Physiaochemical Properties of
Erythrocytes Under the Effect of Radiation 83
Blokhina, V.D. Albumin Fractions in the Blood Plasma of Animals Exposed
to Different Doses of X-Rays 93
Vyeochina, I.V, Effect of X-Ray Irradiation on the Gas Balance of the
Blood 113
Snezhko,, A.D. On Changes in the Oxygen Content of Brain Tissues Under
the Effect of Radiation 125
Aladzhalova, NA. Characteristics of Physicochemical Changes in the
Central Nervous System for Different Periods of Exposure to Radiation 167
AVAILULE: Library of Congress
JA/rn/gsp
Card 3/3 7-29-61

F;WiKj G.M., red.; VARSHAVER2 G.S.2 red.; DANITSIG2 N.M.2 red.;
SOKOLOV, M.V., red.; YMIKOV, M.Ye.,, red.; ZUYEVA,
tekhn. red.
[Transactions of the Conference on the Biological Effect of
Ultraviolet Radiatior]Trudy konferentsii po biologicheskomu
deistviiu ulltralioletovogo izlucheniia. 6th, Leningrad, 1958.
F;oskva, Mcdgiz. Vol.3. (Ultraviolet radiation; biological ef-
fect therapeutic, preventive, and hygienic uses, and measure-
mentl Ul'trafioletovoe izluchenie; biologicheskoe deistvie, le-
chabno-profilaktichoskoe I gigienicheskoe primenenie imeronie.
Pod red. G.M.Franka i dr. 1960. 271 p. IMIRA 15:3)
1. Konferentsiya po biologicheskomu deystviju ul'trafioletovogo
izlucheniya. 6tht Leningrad, 1958.
(ULTRAVIOLET RMS-THERAPEUTIC USE)
(ULTRAVIOLET R&5-PHYSIOLOGICAL EFFECT)

.-nAws G.M.
Some problem In.blelogleal physics. Inv. AN 38M. Ser.biol.
no.2t177-196 " 060. (NM 13t6)
1, Institute of 31ologloal. PbYsics, Anado1w of Solences of
the U98.849, VAGGOV,
(BIOMSICS)

117 , L.G,; , G.K.
74~-
Structural lability and questions on the auroregulation of
cellular processes. Blofisika 5 no.1:34-39 160. (KIRL 13: 6)
1. Institut biologichookoy fisiki AN SSSR, Moskva.
(Cy"LOGY)

FRAUX,-Gil4.-, VII)DIMETS, I., starshly nauchnyy entrudnik; TU!iJLIIDV, I.I.;
DANISIDWSKIY, G.M., prof.
Blonateorology. Znan.sila ~5 no.1:25-27 Ja l6o.
- OURA 13:5)
1. Chlon-korrespondent ANN SSSR (for Frank). 2. Inatitut fizi-
cheskoy khimii All SSSIM (for Vlodavets). 3. Chlen-korreBpondent
AN SSSR, direktor fitotrona Instituta fiziologii mateniy Ali
SSSR (for Tumnov).
04stereological research) (Sioclimatology)

FiLM, G. M.
"About Two Types of Muscle Contraction."
Paper submitted for International Biophysics Congress Stockholm
31 Jul - 4 Aug 161.
Inst of Biophysics,, AS USSIRp Moacow

LIFSHITS, N.N.-;-FBANK,-GJI.,-6tv. red.; TSUZMFR, T.S., red. izd-va;
SUSHMIVA, L.A., tekbn. red.
(Influorice of ioazing radiation on central nervous system
function) Vlikanie ioniziruiiishchikh izlucbenii na funktoii
teentral'upi nervnoi nistemy. 14oekva, Izd-vo Akad. nauk SM
1961. 179 (MIRA 14:10~
1. Chlen,-~korrespondent AN SSSR (ror Frank).
(RADIATION-PIffSIOIDGICAL EFFECT) (VERVOUS SYSTDI)

RAZUMOVAq L.L.; FRANKv G.M*
X-ray studieslof musole structLre uning different fixation
.jwthods. Biofizika 6 no, 1:24-29 161* (MIRA 14:2)
1. Institut biologitheako7 fiziki AN SSSRP Moskva.
.(MUSCLE) (MICROSCOPY-TECHNIQUE)
I

S/194/62/000/006/109/232
D256/D300
AUTHORSt Borshchev, V.B., Kaminire L.B., Larionov, M.G.,
Litinskaya, L.L., Orlovskiy, G.N., kolhlin, F.Z.F
Urbakh, V.Yu., and F G. It
TI TLI~~ t Automatic analyzer of biological structures AB -1
P21110DICAL Heferajivnyy zhurTfal. Avtomati%a I radioaleitronika,
no, 6, 1962, abstract 6-5-17 1 (Biofizika, 1961, 6,
no. 6, 745-747)
T'11; XLarge number of measurements are required to obtain reliable
information concerning the mean values of biological parameters. A
description is given of AB-I type automatic analyzer of biol. struc-
turea capable of producing the mean arithm. value of thr area of
1024 nicro-o0jects with an accuracy not leas than � 7 "', at a speed
of operation of ,,jIOO miaro-ob~ects per second. The image cf a -..i-
cro-object is scanned by lines. The mean value of the area is ob-
tained from the known spacing of the scans, the length of the chord
of the object and the number of counted objects. The length of the
Card 1/2

8/194/62/000/006/109/~32
Automatic analyzer of ololosical ... D256/D308
chord is converted Into a train of standard pulses; their number
being proportional to the length. The number of counted objects is
obtained by comparing the signals from the ochnned line with the
delayed signal from the preceding linet if the signal from the pre-
ceding line is the only one present, there being no sii~nal from the
scanned linet then it Is understood that the ocanning.of the object
is completed and a signal is sent to the counter. Nipkow-dIsx acan-
ning with a simultaneous shifting of the apparatus was employed in
the electro-optical converter. The flux of light which depends upon
the brightness of the object, falls onto a photor-ultiplier tube,
the output pulses being fed into the counter after am-olification
and shaping. Results of tests of the analyzer are presented, car-
ried out with =easuremento of mean radius of erythrocytes. 8 refe-
rences. (Abstracter's note: complete tranalation.j
Card 2/2

5M
FRANK, G.M., AZHIPAo YA.I., KAYUSHIN, L.P.
"Free radicals in a skeletal muscle."
Report submitteds, but not presented at the 22jW International
Congress of Physiological Sciences~
Leiden, the Netherlands 10-17 Sep 1962

zi
'616
f4)
'j-
6. lit. Frank, A. G. Gamburisr, a Ind A. D. Sistlec
7-1-1 w-.1 Z... in previous In'"tilsilonst tning Volarographic niethods In ri- that the 0. concentration In anloW
and plint lissues wits not Conitan( but changed thythriskally. One can obsem this pherinmenon in rim end alto
in rcihly IsolAted i6we ricrarations. The Oyttins was connected with the utilization of Ol by living cells.
lMdIAIIOfl Induced chansee not only of the alvtnlute level of the 0, tension In 11swe but alto of the fhythni. New
investigation In this field extended our knowledge of the significince of the rhythmic utiti"tion or o..
(:hangci In the type of rcriodicity were corscUtcd with rvirticulair steN in the chain or oxid,iirg rtmos~, ThI
same: rilvencrovenon was obwmJ with mitmhoridiiii. Radiation Ind rharmsculot--cal al;rnlt Inlucrict-d the
rKr-j-ty. The r4woonviono was correlated with d4m,ige to the Inner milochondfial membranes. Scv~crsl boom
after irindiAliort the periodic changes Mlprwared, indk3fing repair of miln,hooddal ultratizu~ciures. Further
conir-irkors of the rhythm of o0diting proccisect, of milochondriM uIttattructure and of subosKroscenic ro~h-bty
(obxrvcd by the: Interference MIAW sIlcries us to 6ing these three tirocesses tWhcr and to di%cuas sow. new
features of the autoreffulation of ccL1 proocsic , their radiation dixiturbarvvc, and the rc;alr nXimiskuns Inc,
irradiation.
1~ W&S"Wo'. A-d-f Q`S'kW.4 At-, USX*
report presenW at the 2gA InU. Coctames of Radiatim Research,
Riarrogato/Yorkehirill. Ot. Brit. 5-11 AU91962

BOROVYAGINO V.L.; FRANK, G.I._I,
Submicroscopic organization and functional characteristics of the
Aullorian cells of the retina. Biofizika 7 no.1:42-50 162.
:. ', (MIRA 15:5)
1. Institut biologicheskoy fisiki AN SSSR, Moskva. i
(RETRIA)

SAMDSUDOVA, N.V.; FRANK, G.M.
Structural reorganization of the transveraostriated muscles during
contraction. Biofizika 7 no.4z4ll-416 162. (MIRA 15'.11)
1. Institut biologicheskoy fiziki AN SSSR. Moskva.
(MUSCLES-M3TILITY)

1~ -FRANKt G.M.-- - -
Call is a self-regu2ating system. Nauka i zhiznl 29 no.4:27-30
Ap 162. (KERA 15:7)
1. Chlen-korrespondent AN SSSR.
(CELLS)

BMUZOVA, Valentina Ivanovna; BOROVYAGIN, Valeriy Leonidovicb~;
GILEV, Vladimir Petrovich; KISELEVI Nikolay And~~evich;
TIKHONENKOI Anna, Sargeyevna;-MNTSOV, Yuriy Sergeyevichl
FRANKrX,,X . otv, red,; SHMELEV, I.P., red.ild-va; RYLINA, Yu.V.,
tekhn. red.
(Electron-microscopio methods for studying biological objects]
Elektronnomikrookopicheakio metody iaeledovanlia biolbgicheakikh
ob"ektov. (By] V.I.Blriusova i dr. Moukva, Izd-vo Akad. nauk
SSSR, 1963. 203 p. (MIRA 16t6)
1. DwtiUt vadiatsionnoy i fiziko-khimicheakoy biologiiAN SMR (for
Biryuzov&pTikhonenkD)62* Inetitut biologicheakoy fiatki AN SSSR
(for Borovyagin)."3e TAboratoriya elektronnoy mikroekopii AN SSSR(for
Gilev). 4. Institut kriet&llografii AN SSSR (for Kiselev).
5. Institut morfologii zhivotnykh AN SSSR (for Chenteov).
6. Chlen-korrespondent AN SSSR (for Frank).
(Biological research) (Electron microscopy)

FRANK, G.M.j otv. red.; ALADZHALOVA, N.A.p doktor biol. nauk, red.;
DERIN, N.N.,1 dottor biol. nauk, red.; KOL014EYTBEVA, I.K.,
'red.izd-va; SHUNGSKAYA, V.Ye., red. izd-va; SIMKINA, G.S.,
tekhn. red.
(Primary and initial processes of the biological effect of
radiation] Fervichnye i nachallnye protsessy biologicheakogo
deistviia radiataii. Moskva, Izd-vo AN SSSR, 1%3. 277 p.
(MIRA 16:10)
1. Akademiya nauk SSSR. Inatitut biologicheakoy fiziki.
2. Chlen-korrespondent AN SSSR (for Frank).
(RADIATION-PHYSIOLOGICAL EFFECT)

AMBA11,TSMAN, V.A., akademik; ASaATYAN, E.A.; BOGOLYUBM, NJ!.,
akadezik; VINOGWOV, A.P., akadenik; GINETSM-SHY, A.G.;
101UMMITS, I.L., akademik; KOCIETKOV, N.K.; KURSANOV, A.L.,
akademik; MELINIKOV, O.A.; NESHEYMOV, A.N., akademik;
NESHEYANOV, An.N., doktor khim. nauk; OBREMOV, I.V.,
okademik; POLIVANOV, M.K., kand.fiz.-mat.nauk; REUTOV,O.A.;
RYZHKOV, V.L.; SPITSIN, V.I., akaderaik; TaU, I.Ye., akademik,
FESMIKOV, V.G.j akademik; FOK, V.A., ukademik; SHCHMBAKOV,
D.I., akademik; FWK, I.M.; FRANK; Gj'),; KHOYJUV, A.S.0
doktor kh:Lm. nauk; SMff,kK]2,', i&aemik; ENGELIGJUMT,
V.A., akademik; SHAPOSIMIKOV, V.11., n~ademik; BOYMSKIY,V.A.;
LIKHTUISHT-EMIJ, U.S.; WAZEMSEVA, V.N., red.izd-va; MAYS,
YeX., red.izd-va; TARAOIKO, V.M., red.izd-va; POLYAKOVA,
T.V.1 teklm. red.
(As seen by a scientis: From the Earth to galaxies, To the
atomic nucleus, From the atom to the molecule, From the
molecule to the organism] Glazami uchenogo: Ot Zemli do ga-
laktik, K iadru atoma domolekuly, Ot molekuly do arganizma.
Vookva, Izd-vo AN SSSR, 1963. 736 p. (MIRA 16:12)
1. Akademiya nauk SSSR. 2. Chlen-korrespondent All SSSR (for
Asratyan, Ginetsinskiy, Kochetkov, Mellnikov, Reutov, Ryzhkov,
Frank,1.1-1., Frank, G.M.)
(AstronoDw) (Iluclear.physics) (Chemistry) (Biology)

FRANK, G.M., otv. rod.
[Problerns of biophysics; materials] Voprosy biofiziki; ma-
terialy. Moskva, Nauka, 19C4. 286 p. (1,11.71A 17:8)
1. Internntional Biopljysical C ngress l-'. Stockholm, 1961.
2. Chlon-korrespondent MI. SS-S

G.X.., otv. red.; YUZ111, A.[-'.,, otv. red.; YUZNl'.T.OA)V, I.V.,
d6-ktor filos. nauk, red.; Llll3JfIT:;, N.N., doktor biol.
nauk, red.,- MOIR, M.F.,, kar4. l'iloq. nauk. red.;
.MATALOV, A.T., mlad. nau,,-Ln,sotr... nauchn. red.;
KREKYANSKlY, V.I., mlad. nauchn. sotr., nauchn. red.
LThe essence of lifeli 0 sushchnoal-I zhizni. Moskva, Nauka,
1964. 3rO p. (MIRA 17: 8)
1. Ak~: iemiya r-ilk SSZR. I'- - chnyy sovet po f 3.1o so f skim
rose-,T yeateotvoznardya. 2. Institut filosofli AN SSSR (for
KrenWanskiy, Shatalov). 3. Chlen-korrespondent AN SSM (for
Frank, Kuzin).
c.

VKUNA, A.A.; LIN A71
,JIKI'IN, B.K.; G-'ol.
Discrete diapersion of rays at smill angles on a concentrated actin
solution. Biofizika 9 no.2:237 164. (MIRA 17:12)
1. Institut biologichaskoy fiziki AN SSSR, Moskva.

G I ~ *,.';;-~ IOV i, p N . ~'- . ; ~', EY'-' ~I K . J' . -, l-'ILUiK , (;.:,I,
Unusual remodealnr of the striated nLnixtxe of myril"ibrils
with shortening of the antootrople disks. Dokl. AN SSSR 155
no. 5:1192-1193 Ap 16,4. (KIRA 17 - 5)
1. Institut biologichoskoy flziki AN SSSR. 2. Chlen-korrespond-
ent AN SSSR (for Frank).

I .. rjtK
- 1. 1., M
R'27UMOVA, L.I..; B-K-; '- -;--
X-ray i3t!idy of itructural reconstructions In a striated muscle
following changeo in Us length. Dokl. AN SSIjR 157 no.31688-
01 :1 16i.9 (MIRA 1-,'&7)
1. Chlon-korrespcndont. AN SSSR (fcr Frank).

VAZ7NA, A.A.; LENAZI11KHRI, B.K,.,FW1K, G.M.
Diacovery of an actin polymer differIng from the F-fo---.n. Dokl.
AN SSSR 159 no..I.:921-922,' D 164 (MIRA 1821)
Ia InstItut biologicheskoy fiziki All SSSR. 2. Chlen-korres-
Pandent AN SSSR (for Frank).

FEDORENKO, N.P., akademik; SUKACHEV, MI., akademik; KARAKFfEV, K.K.;.
KONSTANTINOV, B.P., akademik; XSTAUROV, B.L.; YEFIYOV, A.N.;
SHUMILOVSKIY, N.N.; ISHLINSKIY, A.Yu., aleademik; GERASIMOV, I.P.J.
akademik; KAZARNOVSKIY, I.A.; BYKHOVSKIY, B.Ye., akademik,- ZHEBELAK,
A.R., akademik
Discussion of the annual report. Vest.AN SSSR 35 no-3:95-112
Mr 165. (MI RA 1814)
1. Prezident AN Kirgizakoy SSR (for Karakeyev). 2. Chleny~-korres-
pondenty AN SSSR (for Frank., Astaurovp Yefimov., Kazarnovskiy).
3. AN Kirgizakoy SSR (for Shumilovskiy). 4. AN BSSR (for Zhebrak).

RA711MOVA, L.L.; MELINIKOV, L.A.; LFMA7HIK111N, B.K.; FRANK, G.M.
Shortening glycerinated muscles with a damaged two-dimensional
lattice of filaments. Biofizika 10 no.1:194 165.
(MIRA 18:5)
1. Institut biologicheskoy fiziki AN SSSR, Moakva.

VAZINA, A.A.; LEMAZHIKHIN, B.K.; FRANK G.M.
.V--, .
...
Liquid crystalline structure In nonoriented gals and F-actin
solutions. Biofisika,10 no.3420-423 16,5. (MIM 18t11)
1. Institut biologicheakoy fiziki AN SSSR, Moskva. Submitted
July 60 1964.
r

P'lys'cal. and phyrnicov!isial.cal
J. 161~
Izv. All SQ19-It-Ser. blol~ no.3035-"g 1 4v rk
8 5)
Inst1tot binlogichoskoy fiziP.1 I I T,

VAZINA, A.A.- DOLOTINA, I.A.; VOLIKENSHTEYN, M.V.; LYASOTSYAYA, IL.;
FRAN'K, G.M.
Configuration of a polypeptide chain in G- and F-actin.
Biofizika 10 no.4t567-570 165. (MIRA 18:8)
1. Institut biologicheskoy fiziki AN SSSR, Moskva, i Institut
vysokomolekulyarnykh soyedinenly AN SSSR, Leningrad.

VAZINA, A.A.;-FRANK G.M.- ZIIELFZNAYA, L.A.
Intermodinto actin polymor, MokldirdJa 30 no.4t721-720
Jl-Ag 165. (MORA 18:8,'
1. Institut biologicheakoy fiziki AN SSSH, Monkva.

VLADIVIROV, Yurly Andreyevich; red,; 1111-THEIIIA,
A.V. . red.
[Photochemistry and luminescence of proteins] Fotokhimila
i liuminestsentsila belkov. Moskva, Nauka, 1965. 231 p.
Wiiu' 19~1)

ijRiK1N:iL11', H.D.j BURSHTEYN, E.A.; LIVOV, K.M.; PULATOVA, N.K.;
ROZOVA, L.V.; FRAEK, G,M red,,- PLYSHEEVSKAYA, Ye.G..
red. --- -!J.~
[Call biophysics] Blofizika kletki; sbornik statei pod
red. G.M.Franka. Moskva, Nauka) 1965. 294 p
(MIRA 19:1)
1. Akademiya nauk SSSR. Institut biologicheskoy fiziki.
2. Chlen-korrespondent AN SSSR (for Frank).

b(A1.131111EYN) E.A.; LIVOV, K.M.; AOZOVA, L.V.j FRANK.,
PLYS11U.SYMA, Ye.G.,, red. red.;
[Molecular biophysics] Molekuliarnaia b1ofizika. 14oskva,
Nauka, 1965. 251 p. (MIRA 19:1)
1. Chlen-korrespondent AN SSSR (for Frank).

Ti
ACC NR: AP6031663 SOURCE CODE: UR/0216/66/ooo/005/0625/o61;3
AUTTIOR- Frank. G. M.; N. N.; Arsen'yeva, M. A.; Apanasenko, Z. I.;
Belyayevla) L. A.; Golovkina, A. V.; Klimovitskiy, V. Ya ; Kuznetrova.,_M. A.;
Luk'Yanova, L. D.; Meyzerovi Ye. S.
ORG: Institute of Biological Physics, AN SSSR (Institut biologicheskoy fiziki
All SSSO
TITLE: The combined effect of s aceflight factors on some functions of the organism
SOURCE: AN SSSR. Izvestiya. Seriya biologicheskaya, no. 5, 1966, 625-643
TOPIC TAGS: central nervous systembiologic oxidation, biologic metabolism,
refflex.activity, brain.t~spue, radiation effects, itmi2&ag radiation biologic effect,
ABSTRACT: R' ults of experime
iting the combined effect of spaceflight factore
en S
\ts
di:tu
(acceleratio , vibration, and or, some functions of the organism (brain
hemodynamcis, CNS functions, and cell division of hematopoietic organs) are dis-
cussed. Tolerance of the CNS to accelerations depends significantly on changes of
breLn hemodynamics during accelerations. Brain blood flow in rabbits subjected to
j centrifugal accelerations in the head-foot direction (5 G in head region knd 10-G
in pelvis region) for 12 to 60 see decreased. This reaction was insignificant
during the first exposure, sharply increaued during repeated exposure, and weakened
after chronic exposure, thus indicating that tolerance t,) accelerations can be
i-.qord - 1/3 -UM-611-o6_06-29-195.2

ACC NRt AP60316(,3
increased by training. Participation of CNS reflex mecliftnisma in these processes
Is probable. The 15-min exposure of guinea pigs to radial accelerations (8 G),
centrifuged twice with a one-day interval, increased the spontaneous bioelectrical
activity of extensor muscles; however, the effect was not lasting. It was lowered
the day after the second centrifugation and was essentially the same as the control.,
from the sixth day. The 15-min exposure of the animals to vibrations (70 cps,
0 .14 -n-a amplitude) , twice with a one-day interval, produced less distinct but more
stable changes, with normalization more than 25 days after the first vibration
expo.qure. Changes in myoclectric activity during spaceflight (Sputnik-11) Aycorpo-
feUureo of both acceleration and vibration effecto, e
r Bled appreciably 6eding
them in intensity. Oxidation processes in brain tissues, judged by P02 and "oxygen
test" results, were initially increased in intensity by the effect of vibrations
(using the above parameters), and subsequently underwent phase changes, including
depression of oxidation metabolism during the aftereffect period. Changes in
unconditioned defense and vestibulotonic reflexes and upper nervous activity were
observed later than 12 days after vibration. Inhibition of food-procuring con-
ditioned and defensive unconditioned reflexes in the majority of animals, with pro-
nounced parddotic phenomena, was also "bind. Exposure to 8-, 10-, and 20-G accelerations and
v
l
ibration (700 cps, 0.005 mm, 60 min) resulted in decreased mitotic activity of
bone-marrow cellg for 30 days. Disturbances of cell division involved chromosomal
stickiness and increase in the number of chromosomal aberrations. Ionizing radia-
~.cns and the above dynamic factors produced a similar effect on oxidation meta-
boliz-_ in brv_~~. tiusues and cellular division in hematopoietic organs. They differed~

T T.7n"I
1~ 14 1 C. - -)
ACC NRi AP603i663
only in the level and dynamics of changes caused. The combined effect of irradia-
tion and dynamic factors either did not exceed or was less than the effect of each
of the indicated factors separately, a phenomenon seen as a radioprotective action
of dynamic factors. The relations observed are similar to phenomena of dominance
and parabiosis. Typical radiation reactions were intensified when irradiation was
combined with factors having directly opposed effects. The variation and com-
plexity of results of the combination of dynamic factors and irradiation are
explained by the multiplicity of the mechanisms of the combined effect of radiation
and nonradiation factors. The combined exposure to vibration and whole-body
acute irradiation at a lethal dose showe,. that in a majority of cases the vibration
effect on metabolism and CNS function WUL dominant at early stages, while that of
irradiation prevailed at later stages. AL the latest stages of exposure, the com-
bined effect of vibration and irradiation was diverse and complicated.. According
to some indices, the trend of changes corresponded to the effect of one of the fac-
tors while the dynamics of the processes reflected the effect of the other one.
Under the uniform action of both factors, the phenomena of partial summation of
weakening of the radiation effect, and in several cases of a sharp increase of
radiation effect by the opposite action of the vibration effect, were observed.
Probable mechanisms of the phenomena described are considered. Orig. art. has:
13 figures. JSW)
SUB COT_t o6/ SUBM DATE; 14Dec65/ ORIG REF: 032/ OTH REF: 008/ ATID FRESS:
A5995
"Ord

'---AP601564r'--- lJk---W16 4fj-/66/o 0670070 6 5 MOW'
ACC NR. ~t4 ) SOURCrW
INVENTOR: Bagryantsev, A. L.; Frank, G. P.
ORG: None
TITLE: Turbine working blade mounting assembly. Class 2T, No. 181230
SOURCE: Izobreteniya, promyshlennyye obraZtBy, tovarnyye znaki, no. 9, 1966, 57-58
TOPIC TAGS: turbine blade, axial compressor, mechanical fastener
ABSTRACT: This Author's Certificate introduces a
turbine working blade mounting assembly for wheels
in axial compressors. The blades are fixed in an
axial direction in the rotor grooves by a split
lock ring. Reliability is improved by setting the
lock ring in a groove in the disc. This groove
forms a continuous support collar. The blade roots
are equipped with lugs for limiting the radial motion
of the ring.
SUB CODE: 13, 21/ SUBM DATE: 17Apr65
621.515-226.2
1-blade; 2-rotor; 3-lock
ring; 4-groove; 5--collar;
6-blade root lugs

compwite nidnmquals the Brown effea - Wig
yond the boundary or the
f"md ~o extend be firm
WF 6 4&kined to a quarter of the origirmi
milr 1 -10
Efi, OW riiki6i" t%* the *own'kW vits nhi
in grey polywn-StaIlift Se. Dr ikasurw
ipe`dW'-di%M betikin-- Obe`hornW -ph&o~
as found' thk
INSS *I%
GO: Physics Abstracts, Vol, 56, No. 66,41, PPGe 32A, April 19~43

pfi-flyft of IM salobldr,
d
w
o Obror, 14, No. 6, 243-57
J,

A brief survey of internal photoelectric phenomc:na
Is given and the photoelectric effect in PbS is ex.
plaincdir tcrmsofthccncrgy band model. Thepro.
F"ties; of natural galena are briefly discussed, the can-
cluslon being that natural PbS is unutisfactory for thc
manufacture of photoresistors. Artificially, PbS is
prepared (a) by a direct synthesis of Pb and S; (b) by
Elootrioal Baginsering Abst. a chemical ruction of a solution of Pb scetato and
'
.'

ol
57 No
676 113S. The photoc cctn'c
either
.
.
V by depositing PbS on a &lam base as a mult of the
I
pr. 1954 chemical reaction between the solutions of Pb accuite.
Elsotronias CS(NIl,), aml NaOl I, or by the cvjporation of putt
PUS ill Nacultilloll ton picccofgld~s. I'llmetyp"Of
photorciistori arc made (in Cuchoilivakia) by the
latter niethod; one, of these is extermilly cooled by
dry Ice; (tic other two have sensitive surfaccs of 1-5
and 16mm'. rcspectively. Their propcrties aft as
follows: operating voltage 4OV; load resistance,
0 - 1-2 IvIrl, internal resistance of non-c9oled photo- .
cells 1-10 Nfil: lowtst detectAble energy - 10-0 W,
or even less in the case of ice-cooled resistors, uniform!
spectral :sensitivity down to 2-5/j; cfficiency of the
,
non-cool:d photocells is -0- 1 AJW, this figure
being 10 times higher for the cooled resistors; fro.
qwncy respo= l0kc1s; good stability after initial:
a6ving.. The properties of the PbS photocells are
illustrated by a number of graphs and tabin. The
photoresistors have bccn sucLessfully employed for
film soulid reproduction; otUer applications such as
Infrared Wephony, arc suggested. 54 refs. ..

t. .
it. 3. SIL)OROWWI (P)

FRANK, H.; SHE.TDAR, V.
This oovatry's germnium diodes. p. 2.
(SDELMACI TECHRIKA, Vol. 2g no. 1. Zen. 1954p Praha)
SO: Monthly Idst of last European Accession,(EFAL), LC, Vol. 4,
No@ 11v Move 1955p U101,

Oscillographic method for recordinr characterist-4 cs of germaniim
diodesp p, 110S SDEIDVAGI TBMIKA, ~Mi;;isterstvo ;trojirenat-vi)
Praha, Vol, 2. No. 2. Feb. 19511
SOURCE: East European Accessions List (MAL) Library of Congress,,
Vol, 4, Ho. 12, Decerber 195(5

iaAN-1 ) H.
Effect of temperature on static characteristics of germanium diodeaj
p. 71 SDELOVACI TECHNIKA (Ministerstvo strojirenstvi) Praha, Vol. 2,
No. 3: Mar. 1954
SOURCE: East European Accessions List (EFAL) Library of Congress,
Vol. 4, No. 12, December 195,3

'7.'e1- `C r __
L~-` PhiltrielectriLconductulvityof Cik mitur "Uld 0. [Visnar
V r5 -
111TI V -it v nro INCRITOW111 i
Ubor 15, 411-1, 133-4j(104f. ewl
i- the =the intenal photackc. effect. fildicatef the icla-
t1aft lmtwten the absorption of light and photmJec cond.,
wid. 'Ittempts; tn "plain all the phenomena on the basis of
the cri"gy-ievel i"Itl of mniconductors. 71te theory of
"Leeding the quantuni equiv, Is studied and the frequency
"epen" - f the phrtoplec. effect Is &-m-w-d. The
tech.=cicalopr(wedum for obtaining photockctsically sensi-
tive CdS L- exatrid. The properties of cryst. CdS am stir-
wyed, with partIcukLr attention to the photoclec. properties
lit the visible. ultraviolet, and x-ray Wilds. The influence
of 0 is discussed. Ill concInsion P. presents.lils own ex.
"Clil-11"m with photoelcc. US wid IndicLAcs posQle applica-
ti-Ill. IrtrtlimiLttly for thedetmOuttof x-rays. Wistfuenc(ts.
refr Mineftfu-

C z E C
537.312.5 537.311.33
vroidywozar, 15, No. 8, 311-7
Flag~gx,_ Sla4k
it beirvg1pointed btk t,pho(ocanductivity can take
PWa'6* i0en Aita 4 lotion of light by crr~&6
FISIMS, 114, ilia 'ApOdA 18( free electrons. Itic:
'photbUd "
OwltKity of,"' to Cds Is Ox
mmt V 'IM I
0. C
Rieffl-S,116h. y
0j, , ,
cat ahoics by, d 4 K IFIl Idlik
t
In'cds crist J Ws ra Is,
this b~~g Camid by mono- , bf-itt6l or
combined worribination of tic , , and ho!CL
A mthernat" theory of this effe6t is presenzed,
describloS both tho rise and dewy of tha photo-
conductivity. The paper is illustrated byanumbauf
k f I
.experimnla!Curvei to CA rom vaxous SoUrem
WIL2

~-nANK, H. ; SNE'J.DA;-, V.
Germanium rect-1fierr, with P-N junctions. p. 2
:3D-IL(,'!Ai',T T'21,31DITKA. Praha, Czechon1cvakin, Vol. 3, No. 1, Jan. 1955
Monthly List of East European Accesaions Lr,. Vol. 8, '!(). 8, ~u6,1 ,A 1559
A 11
Un c 1.

FRANK, H.
Use of flat germanium rectifiers for measuring low voltage. n. h
5DELOVACI TECHTIKA. Praha, C,,echoslovakia, Vol. 3, No. 1, Jan. 1955
Monthly List of East European Accessions (EDII), LC. Vol. 8, No. 8, AuFust 1959
Uncl.

FRANI) Y.
FRATTKI v. Froblem of static characteristics of F-N transition In
germanium. p. 201.
Vol. 5, no. 29 Par. 1~55
CESKOSLOVENSKY CA"OFIS rRO 7YSIKU
SCIEt'4'CF
CzechoLlovakia (rraYa)
So. East European Accessions, Vol. 5, no. 5, Y.,y 1c,156

FUNKI H.- ,
Industrial utilization of germanitm.
P. 154
Vol. 5, no, 4, 1955
ZA SOCIALISTICKOU TMU A TECHNIKU
Praha, Czechoslovakia
Sourde: Monthly List of East European Accesionst (EEAL), LC, Vol. 5, no. 2
February 1956, Uncl.

GmMaOSLOVAKIA/Electricity - Conductorp G-3
Abs Jour : Ref Zhur - Fizika.9 No 31 1958., No 6283
Author : FrankjLqj=
Inst :-U-stitute of Electro Technical# Prague* Czechoslovakia
Title Photoelectric Measurements of the Internal Field in Inhomo-
geneous Semi-Conductors
Orig Pub Ceskool. casoY- fYs-, 1955P 5Y No 5P 536-544
Abstract The inhomogeneous distribution of impurities in the crystal is
connected with the occurrence of an internal electric field.
The latter plays the role of an external voltage source. The
application of an external photo-emf of opposite polarity can
cause the photocurrent to stop flowing upon illumi ion. The
photocurrent is observed with the aid of an ac amplifier using
a modulated light to eliminate the de component of the current
in the crystal. By passing dc through the crystal it is pos-
sible to observe that the photoeffect vanishes at a definite
value of compensating current. Thus by using point-illi-Ina-
tion, of the crystal at various distances it is possible to
establish the distribution of the internal field over the
Card 1/2
CMHOSLOVAXWElectrlclty _ Conductors
Ab' Pef Zhur - F'Z'ka, No 3., 1958.. No 6283 G-3
crystal and to observe
responang experiments honseclueutly 'to lnhOmOgeneities. Cor-
orrectness of the Tuz ave been Performed and have shown the
theory of the vol=e Photoeffect.
Card 2/2

ROO (.,,V;: t,~ G., jw%,I-~! t":,

/57.75. t3pe of Ilbs lphoupoctil V!)'ww1tcldc
I~AUMM.-J' ANLI F. Pi4fill..
r"( 269-74 (1953J In
-Iaik,! iliwripff n of the production
Gives 10
r.'s i(5
e
po
pro'll'Ill'u. Tilt pho"Oftafifive lllateml~' j'1-CP.!rC'J by
;tdhcctsyntI-,tsisuf KmmiS, is d-.posU-.!
tion cri thr inmur SutfaCt- of r~~ gla5i hulh
two grapilitc c1ccilod"3, lhc NIS 11mr i3 ~114:flzcd
by oxidation and the bulb i!i thc%t 111t
resuldng ~hotoccll, 4cr a prcliminary 4qg~fn;, has
the Sollowing chamcmistirs: (1) dark of
several Mu; (2) optimum I.e. oIatim, w1mgc of
(3) time constint of 100p~eq (41 ~~ivifjvijy at
the room tfillfvraturc 10-11ty; (5j
tically uniforrot over the whule visible ranj~..~ and over
the upjxr parl or tho infrared (down M, 2-2).,m).
Physical a~pm(s 0", a PbS pholiwull wm% discwi.-d by
It, F(ank in a ptevious piw [Abstr. 1652
9, S~ S1
01

62t.314.7

055
V.
-ItjUDAR AND V. ILDERO.
o
Techml!09Y and
Contact frarls'ston, ate dixuSsed, I b&: pia,,,,,~-~ prh-~
ciplcs of ll-,c tran"asior aethm an expilir,"I md thd
c1ccirical popertivs of two type's of 1b.,
arc dcscxib~d in d..:A. nid
point-coutack ttanii3tors .
F!asI-CmapnIWCkl trarishtors U-4,11.110; h;1,3 thr f"Pow-
;ng parmr~tm: (1) powLe Lli,5!~:ojaioii l'OniW,
:(2j),oIaX. CONCC(QT Ind CillittCrCWMILI U~ -'m!:iA;wd
5r.-A, (3) r~,:--M:i, (-ICJ 11,
P's I - .10-;Ov, 12 20it anda 1 -5 paw.-r

ut fjcqucn,~Ir-~, jjp ta and over YXI kc/s as ~tivpfltlers anJ
up to 10hfc;,ins owillaton. Sirwo the tninsktors aro
!mhddcd in plistiv, their jitf:0-Aamoal -t~,b4ity k
42th's.1wory. Tolerances in th-- rfmfical ch,
j kliliks arc sufficirrafy low to svarameg~ r. !~Ccmrlll
toms production. The rret-11-masi.-d tansistors
orcrate Nv;tll rumi, colb:ctor ewrent c,,, -2mA,
collector voltage of -1 to IOV and emil!tr current
orO-5vftA. Thr, paper h 111wMrated fly it nihi(antial
k
nutill'-Cr of dhiractcristic,
1. SIDORtAtIV-1
l
rj

F if.
Problems of glass technology. p.197. EPITOANYAG. Budapest.
Vol. 8, no; 6, June 1956.
SOURCE: East European Accessions List (EM), Library of Congress
Vol."01 No. 12, December 1950

JW '9~,e /7,=/- IwIgR - photocells and Semiconductor Devices li-8
OVAKIA/Electronics
f Zhur . Fizika, No 6, 1958) No 13666
Ais jour PA
nk Helmar praguey
Author *__Ira ctrotechnical Physic')
ffigber""'-L"""! Sle
Tti her ns itute of F
Inst Czechoslovakia istorso
Title junction GerManilu3 Twans 17, No 12, 680-187
Orig Pub SlaboproudY obzor) 1956)
Iting the basic propertic s of transistors and
Abstract their applications) the author con-
After indic' ilities of
modern pO88ib 0.1 fundamentals Of junction transis-
siders briefly the physic
cular attention is Paid in this case to the in-
tors. Farti arriers on the electric properties Of mi-
fluence of minority c processes in se
tor) to the carrier-injection tter and
the semicOnduc of the p-n junction as an eMi ting
conductory and'.the role is of methods for connec
collector. niere jS EL brief anUlYs enanUfacture and
transistors in circuits- The technology,fofCztehehoslOvak manu-
tion transistor'
the properties Of June ith a maxmm dissipation power of 20
facture are describeclp w
Card 1/2
Zee thO terip g r-req,e,
azId -ZO'vak - erattlre cy up t
and fre 0 50o kc
bi tranststor, qUency 0
Ogrr
Lhe bat
11.re gie. 1. ePenclence c
12 t1tles. the forr of cer-
Of t-'bles
Carcl
212

CZECHOSLOVAKIA/Electricity - Semiconductors 11-3
Abs Jour Ref Zhur - Fizika, No 6, 1958, No 13500
Author F--ank Helm rger Antonin
__~: qn Sir^ JIM
Inst Not Given
Title Mensi;roment of the Lifetime of Kinority Carriers in Ger-
rwalium
0rig Tlub Slaboproudy obzor, 1~571 181 No 1o) 643-649
Abstract A survey of the method for measuring the lifetime of carriers
in germniuu.
Card 1/1

AUTHOR: Frank, H011K&r CZ/37-58-5-14/19
TITLE: `jTEe-0F3~_e_n_t_a_t_jon of Single Crystals of Germanium and
Silicon by an Optical Method (Orientace monokrystalt
germania a la5emfku optickou metodou)
PERIODICAL: 6eskoslovensky' Cwasopis pro Fysiku, 1958, Nr 5,
pp 614-617 + 1 plate (Czech)
ABSTRACT: The orientation of single arystals of germanium or
silicon has to be determined f8r various applications
with an accuracy better than 1 . This can be achieved
by X-ray methods which are however, time-wasting and
dangerous. Our optical meihod is based on older work
(Refs 2,3,4) which has been rediscovered by Wolff, Wilbur
and Clark (Ref 5). We have modified this method by usinG
a convergent beam of light, thus making the reflected
image bright enough for crystals to be oriented in weak
daylight. The optical method described here is very fast
and is suitable for production control. For the
orientation of germanium crystals into a direction parallel
to a (111) plane, the crystals were etched by the etch
"W ag" (formula: 20 ml HKO 3 cone. + 40 ml HF 48%) +
Card 71/3 2 g AgNO 3 + 40 ml H20), which preferentially attacks the

CZ/37-58-5-14/19
The Orientation of Single Crystals of Germanium and Silicon by
an Optical Method
(111) surfaces (Ref 6). Fig.1 shows the characteristic
triangular etch pits; Fie;.2 shows the light reflected
from such an etched (111) surface. The reflection pattern
has triangular symmetry. Fig-3 shows the optical arrange-
ment used for orienting the crystals. The light source
is a I mm diaphragm 3 illuminated by a 30 Watt bulb 1
through a condenser 2. An achromatic lens 4 (f - 200 mm,,
60 mm diameter) images the light source onto the crystal 6.
The reflected light is observed on a white screen 5,
200 mm in diameter. The illuminating beam passes through
a 10 mm. hole in the centre of the screen. The distance
from the crystal to the screen is approximately 60 mm.
The crystal is rotated until the triangular reflected image
is centrally symmetrical round the opening in the screen.
A rotation of 15' of the crystal is observable as a
0.5 mm shift in the reflected image. Further details
about the mechanical arrangements used for holding and
rotating the crystals are given. A suitable arrangement
for measuring the deviation of the crystal surface from a
Card 2/3 (111) plane is also described. Silicon crystals are etched

CZ/37-58-5-14/19
The Orientation of Single Crystals of Germanium and Silicon by
the Optical Method
in a 10% solution of KOH waxmed to-?O OC. After 1-2 mins
the (111) surfaces with triangular symmetry of etch pits
become visible; after about 5 mins of etching the (100)
surfaces with square etch pits also become noticeable.
The described optical method for orientating crystals is
equally suitable for silicon.
There are 6 figures and 6 references, oneof which is
Czech, 2 German and 3 English.
I
ASSOCIATION: Vy'zkumny' ustav pro elektrotechnickou fysiku, Praha
(Research Institute for Electrotechnical Physics, Pi!a6ue)
SUBMITTED: April 149 1958.
Card 3/3

CZECHOSLOVAKIA/Electronics - Electrocells and Semiconductors H
Device
Abs Jour : Ref Zhur Fiziks, No 9, 1959, 20783
A thor : Frank Hehmr- Vinopal, Jarcmir
Inst
Title Silicon Junction Rectifiers
Orig Pub Slaboproudy obzor, 1958, 19, No io, 639-643
Abstract After a examination of rario-,:s tyres of rectifiers,
the athors describe the properties of silicon jumction
diodes. Comparison of the properties of silicon and
germanium diodes is accompanied by a brief explanation
on the basis of the band theory. Pata are given (inclu-
ding curves for the eqvations and tables for the parame-
ters), which characterize the properties of silicon
j.inction diodes (types 111 - 124 NP70), designed for vol-
tages up to 300 and ct:rrents up to 1 amp, partic:larly
their behavior at higher temperat.res. Bibliography, 13
titles.
Card 1/1

.AUTHOR: 1ia1z&r__Frqn&_ CZECH/37-59-2-8/20
TITLE: A Four-electrode Probe with Mercury Contacts for
Determining the Resistivity of Silicon
PERIODICAL: Ceskoslovensky Casopis Pro Fysiku, 1959, Nr 2,
PP 173-177 (+ 1 plate)
ABSTRACT: For the rapid determination of the resistivity of semi-
oonductors) the four-probe method is commonly used
(Ref 1). One of the conditions of this measurement is
that the contacts must be ohmic. This can be achieved
in Ge by slight abrasion of the surface and light pressure
of tungsten probes on to it. With silicon, ohmic
contacts are not achieved in such a simple way. As an
alternative to the existing methods of either electrically
formed contacts or alloyed contacts, we have tried
mercury as a contact material. The contact between a drop
of mercury and a ground surface of silicon is non-linear
and unstable. If, however7 we form this contact by
passing a current pulse of suffigient intensity through
Card it, the resistance drops from 10 ohm to a few ohm, the
1/3 contact becomes stable and practically linear until it is
mechanically interrupted. The forming pulse was a L>/"

CZECH/37-59-2-8/20
A Four-electrode Probe with Mercury Contacts for Determining the
Resistivity of Silicon
discharge from 1-4 pF condenser at 70-100 V. This pulse
leaves the crystal undisturbed and the surface clean.
A measuring probe containing 1~ contacts was prepared and
it is shown in Fig 2. The mercury is contained in a
pool inside a plate of insulating material. Four holes
of 1 mm diameter are drilled into the plate. The distance
between the contacts is s = 3.5 mm and the current is
carried through iron plates. For measurements, a flat
surface of the crystal is pressed into contact with all
four holes by a spring. By rotating the instrument around
its axis, we let the mercury run into the holes and thus
make contact with the crystal. A self-contained
conventional measuring circuit was constructed and is
described in Fig 3. The circuit included provision for
the forming pulses. For thin layers, certain corrections
to the usual 4--probe method have to be applied (Refs 2, 3).
According to Smits, the resistivity of a thin plate, with
diameter I'd" and thickness "w", or with length "a",
Card 2/3 width I'd" and thickness "w", is given by Eq (2). Here
"RII is the resistance measured in the 4-probe measurement

CZECH/37-59-2-8/20
A Four-electrode Probe with Mercury Contacts for Determining the
Resistivity of Silicon
and "CF" are geometrical correction factors. For very
thin and narrow rectangular plates, Eq (2a) applies.
In our case, this means that the rectangle must be less
than 4 mm wide, more than 15 mm long and less than 1.5 mm
thick, if we wish to keep the error to 0.2%. Fig 1+
contains nomograms for the rapid calculation of f for
circular discs. The described apparatus measures
resistivities between 10-* and 10't ohm cm. The error
Card 3/3 is not more than 2%, but depends on the accuracy of the
geometrical measurements.
There are 1+ figures and 3 English references.
ASSOCIATION: Vyhkumny" u'stav pro sde'lovaci techniku, Praha
(The Telecommunications Research Institute, Prague)
SUBMITTED: November 20, 1958

AUTHOR: ~_Fxju*_,Aelmg~~_ CZECH/37-59-3-8/29
TITLE: DetazWknatlowof Resistivity of Very Pure Polyerystalline
Silicon
PERIODICAL: Ceskoslovenskyo t5asopis pro fysiku. 1959, Nr 3, pp 263-266
ABSTRACT: The DC resistivity of high-purity polycrystalline, silicon
is not a characteristic of the material but of the barriers
present in it. To obtain the resistivity characteristtc of
the silicon, a h1gh-frequency measurement of resistivity
was undertaken. The.measurements were made on a poly-
crystalline sample with dimensions 9.1 x 4.6 x 0.6 mm.
Approximately ohmic contacts were made with an eutect1c
alloy of gallium and zinc. Figure 1 shows the real component
of.the :Lmpedan e of the sample as a function of frequency.
The curve in Figure 1 was calculated from the equivalent
circuit (Figure 2), while the poirts were measured. The
11mi-tIng value ok 30 kXX at a freq.--ncy of 30 m.c. may be
considered an the -real resistance of the silicon. The
resistivity is given by
Cardl/4

CZECH/37-59-3-8/29
Determination of Resistivity of Very Pure Polycrystalline Silicon
R. k1 0 k (2)
2
d
A in tho-area-of the specimen, d its thickneAs and
k a correction factor due to the fact that the silicon
.3L
doos not actualljfill the whole volume of the sample k2
is a correction due to the fact that the mobility of
carriers in reduced by the small dimensions of the
crystallites. Figure 3 shows-the model on which the
equivalent circuit in based. The sur.,~'~ace layers SL between
crystallItes are represented by R &md R with C
2 3 2
and C in parallel. R and C are due to the barrier
3 1 1
J at the contact. R is due to the resistance of the
0
silicon. k 1 in given by Z.q (3) and can be evaluated from
Eq (4) if we measure C 0 and calculke C from the
Card2/4 dimensions of the sample and the dielectric tant of
7

CZECH/37-59-3-8/29
Determination of Resistivity of Very Pure Polycrystalline Silicon
silicon (c = 12) . For k. the value 0.01 is taken
as a reasonable estimate. From this (OP Is calculated to
be approxlzmtely 1 000 4cm . This result is supported
by the fact that a single crystal grown from the same
mateicial.had,L after extensive zone refining, the same
resistivity.
The orders of magnitude of R2 -and R 3 are such as to
suggest that the grain boundaries consist of Schottky
barriers, rather than of S102' No evidence for the
presence of oxygen was found from the infra-red
absorption spectrum. The thermo-electric effect shows
that the-naterial was n-type. The conductivity was
plottod.ag"nst t~perature (Figure 4) and from this plot
an actlyatlon energy of 1.1 eV was derIved. All'the
evidence shown that the material was near-IntrInsic.
Card 3/4

CZECH/37-59-3-8/29 .
Determination of Resistivity of Very Pure Polycrystalline Silicon
There are 4 figures.
ASSOCIATION: Yjnku=4 datay sd1lovact techniky, Praha
(Telecommunications Research InBtltute, Prague)
SUBMITTED: November 14, 1958
Card 4/4 V/ -

06630
AUTHOR:',- Fr!~ CZECH/37-59-5-6/13
Helmer
TITLE: Measurement of Hall Mobility on Whole Germanium and
Silicon Crystals
PERIODICAL: Ceskoslovensky' easopis pro fysiku, 1959, Nr 5,
pp 499 - 503
ABSTRACT% The Hall mobility IL = RH.d (RH - Hall constant,
6 - conductivity) is usually measured on thin rectangular
samples by measuring the Hall voltage (W. Shockley -
Ref 1): 1
UH = RHB - (1) .
d
Here, i is the current through the sample, B the
magnetic field and d the thickness of the sample.
It is often desirable to measure the variations in
mobility along the axis of a large crystal. Cutting it
into slices for subsequent measurements is extremely
wasteful and it will be shown in this paper that the
Cardl/5 measurements can be c.irried out without any shaping of

06630
CZECH/37-59-5-6/13
Measurement of Hall Mobility on Whole Gerntaraum and Silicon Crystals
the wyatal. For a plate of cross-section 2r.d , we
obtain:
UH RH B
d
RH I d 2r RH -B , I . 2r (3)
d
where I is the current per unit area.
For a cylinder of diameter r with current flowing along
it, we obtain:
21
UH = RHB . -
rW
I , 2r2Ir
RH - B rw RH . B . I . 2r
Card 2/5

06630
CZEEH/3 59-5-6/u
Measurement of Hail Mobility on Whole ermanum and Silicon Cryqtals
which is Identical to Zq (3). The only conditions for
this identity-are: equal density of current I , no
barriers In the crystal, reasonable uniformity of the
density of carrier6.
The Hall mobility in measured by measuring the Hall
voltage UH between electrodes 3 and 4 (Figure 1),
the electric field 9 x =.U 5,61AX in the direction of the
current flow, the magnetic field B and the distance
between the Hall electrodes:
$L =---UH (6)
B . Z 2r
The measurements were carried out on a holder shown in
Figure 2. The wyatal Is fixed on a slide made of
insulating material. The crystal is held on the slide
by two wire loops between two brass L pieces, which are
Card3/5 covered with a Ga-Zn alloy. These provide the contacts

06630
CZECH/37-59-5-6/13
Measurement of Hall Mobility on Whole Germanium and Silicon Cryst&ls
for the current along the crystal. The slide can move on
an insulating base plate. The base plate carries the four
further contactsq all made of thin bronze springs coated
with Cka-Zn alloy. The two Hall contacts are shown as 6
and 8 (Figure 2); the.contacts for measuring R x are
12 and 13 . C11 contacts can be withdrawn on two
auxiliary slides to allow the crystal to move. Usually,
the contacts are made by pressure of approx. 100 to 300 9
on the springs. On high-resistivity silicon crystals a
condenser has occasionally to be discharged through the
contacts. The base plate is fixed to one of the pole pieces
of an electromagnet.
The resistAvity can be measured simultaneously.
There are 2 figures and 2 references, 1 of which is English
and 1 a private communication.
Card4/5

06630
CZEPH/37 g9gj-4113
Measurement of Hall Mobility on Whole Germanlum &E J.3.COn Crystals
ASSOCIATION: Vfzkumn' Astav pro
y
Praha (Popov Institute
Prague)
,SUBMITTED: March 27, 1959
sdelovac.( techniku A.S. Popova,
of Telecommunications Research,
Card 5/5

9(2,3) CZECH/14-59-6-11/60
AUTHOR: Frank, Helmar, Doctor
TITLE: Tuning IF Filters by Means of a Wobbler With a Si
Junction Diode

PERIODICAL: Of
Sde'lovaci Technika, 1959, Nr 6, pp 213-214 (Czechoslo-
vakia)
ABSTRACT: The author deals with -the various applications of
silicon junction diodes and mentions first the auto-
matic tuning of radio sets. The junction diode intro-
duced into the circuit of the oscillator, changes the
frequency according to the size and phase of -the IF
signals, so that the station tuned in automatically
adjusts itself to the frequency of the emitter. Fur-
ther, the junction diode can be used as a frequency
modulator of the signal generator for the rapid and
clear presentation of resonance curves on the screen
of the cathode oscillograph. New silicon junction
diodes type 111NP70 were recently developed and tested
in the Vyzkumn~ datav pro sdglovael' techniku A.S. Po-
Card 1/3 pov (Research Institute of Telecommunication Techniques

CZECH/14-59-6-11/60
Tuning IF Filters by Means of a Wobbler With a Si Junction Diode
A.S. Popov) with very satisfactory results. A small
tuning device was constructed (as presented in figure
7) composed of 2 electron linked oacillatorz. The
oscillator with the electron E provides the compara-
tive frequency and for this reason the small condenser
C is gauged directly in Kc/s for a range of 430-490
Kg/s. The size of the signal can be regulated by the
potentiometer P . The frequency modulated oscillator
with the electr;n E is similarly connected with the
only difference Thai the si-diode D is connected paral-
led to the oscillator circuit L C . The condenser
C prevents the high frequency ;oll~ge from entering
tfle circuit of the modulation voltage. It is neces-
sary to avoid a reciprocal influence between the coils.
For this installation the oscillograph type KF!Lyfk
T531 was used. The described device is simple and
likely to speed up and guarantee the optimal tuning
of IF filters. In his conclusion, the author mentions
Card 2/3 the application of si-juntion diodes as simple fre- v1*1

CZECIV14-59-6-11/6o
Tuning IF Filters by Means of a Wobble.- With a Si Junction Diode
quency modulators. There are 2 photographs, 2 graphs,
3 circuit diagrams and 3 references, 2 of which are
Czech and 1 American. L11Z
Card 3/3

-FRANK., H.
Four-electrode probe with mercuI7 contacts for determining the resistivity of
silicon. P. 173.
CESKOSLOVENSKY CASOPIS PRO FYSIKU. (Ceskoslovenska akademie ved. Ustav Technicke
fysiky) Praha, Czechoslovakia. Vol. 9,, no. 2., 1959.
Month2,v List of East European Accessions (EEAI) LC. Vol. 9, no. 2, February 1960.
Uncl.

?J,.~;V, H.
i"Icasurement of the hall mobility on vhole gerumnimu and silicori crystals.
P. 09.
317SOSLOVF'~MIY CASOIIT~ PRO ~-r
. SIKU. (Ceskorlovenka al-ademic vQd. Ust-v
Teclinicke fysi~-j) Praha, Czechoslovaida. 7o1. 9, no. ~,', 191,2.
?,',onthly List of East European Accessionn (SBAI) LG. Vol. 1), no~'-Z, Feb. 196o
Uncl.

FRANK, H.: K=K, J.
National conforenco on semi-conductors in Roznoy pod Radho3tom. p. 598
SLABOFROUDT OBZOR (H:Lnii3t*ratvo vacobenibo stroj:Lronstvi, minist*rstvo opaju
a Caskeelovenska vadocko-t*chnicka spolocnost, sekee alektrotachnika) Prah2,
Czechoslovakia, Val. 20, no. 9, SePt. 1959
Month4 List of East European Accessionz (PZAT). IX. Vol. 9. no. 2.
Fob. 1960
Uncl.

I FRANK$ Helmarj dr.
Compound semiconductors. Slaboproudy obzor 21 no.7.-426-432 J1160.
(EUI 10:1)
1. Vyzkumny uatav pro adelovaci techniku A.SePopovia, Prabas
(Semiconductors)

'#t.
Z/039/60/021/011/003/003
AUTHOR: Frank, H., Doctor
- ---i-
TITLE: International Conference on the Physics of
Semiconductors, Prague, 1960
PERIODICALi Slaboproudy' obzor, 1960, Vole 21, No. 11,
pp. 658 - 66o
TEXT: The conference was held from August 29 to September 2,
1960, with 700 foreign and 150 domestic participants.
At the opening session A.F. Yoffe discussed the present state
of solid-state physics and W. Shockley discussed some outstanding
problems of the p-n junction theory.
The main sessions of the conference were divided into four
simultaneous sections.
Compared with the Amsterdam .Conference In 1954, large advances
have been made in the theoretical evaluation of the band
structures of semiconductors with the ald of fast computers.
Both the one electron and many electron approximations were
discussed in detail. Much progress has been made in the theory
of transport such as multiphonon scattering, strong scattering
Card 1/5

Z/039/60/021/011/003/003
international Conference .... E024/E335
on impurities, transport in high magnetic fields, etc. A now
effect of the modulation of minority carrier mobility by majority
carriers at low temperatures was discussed. Negative mobility
has been predicted for InSb at low temperatures by Maclean and
Paige. Shockley and Hubner reported an experiment in which the
momentum of phonons can be directly measured by the interaction
with free electrons (transmitted phonon drag effect). A number
of problems on thermal and electrical conductivity are still
unsolved, particularly in semiconductors with complicated
structures containing several components (Yoffe). A number
of new effects were reported in the galvanomatnAtic sections
such as the incompletely understood negative magnetoresistance
effect in InSb and germanium (Sasaki et al). The newly
discovered tunnel diodes gave rise to a number of basic
theoretical investigations. The effects of inhomogeneity on
various transport properties were discussed by several authors.
Though a number of investigations have been carried out
regarding the thermal conductivity of semiconductors, the
Card 2/5

Z/039/60/021/011/003/003
International Conference .... E024/E335
dependence upon temperature of this conductivity has remained
somewhat obscure.
Aigrain discussed a new type of propagation of electromagnetic
waves in a semiconductor within a magnetic field, called
"helicon". The energy states of various impurities and
imperfections were discussed along with radiation damage in
semiconductors.
Optical effects were discussed in great detail. B. Lax gave an
introductory lecture on magnetospectroscopy in semiconductors
and several papers dealt with various aspects of optical
investigations in semiconductors. These included recombination
radiation and absorption spectra.
The question of long lifetimes and large diffusion distances
of excitons is still a controversial one.
Photoconductivity was discussed by R.A. Smith, A. Rose and
others.
In the field of surface effects, the techniques 'of obtaining
a clean surface have now been established. A number of authors
dealt with the influence of various environments on the
Card 3/5

International Conference ....
Z/039/60/021/011/003/003
Eo24/E335
surfaces of semiconductors.
Resonance effects were discussed by Peher, Roth, Williams,
Dousmanis, Rosenblum and others.
In the section dealing with ionic crystals, interest was
centred on the band structure of such crystals.
In the section on semiconducting compounds, Garrett and
Hannay reviewed the organic semiconductors.
Morin discussed fluorides, oxides and sulphides of transition
metals.
Group AIIIBV semiconductors were discussed by a number of
workers, while- some Soviet workers (Zhuze, Regel and others)
discussed unusual alloys such as In.Te 3% etc.
Discussion groups dealt with the classical semiconductors,
selenium, tellurium and with selenides and tellurides. CdS
and ZnS also proved verypDpular.
Ternary systems were discussed mainly from the point of view
Card 4/5

Z/039/60/021/011/003/003
International Conference E024/E335
of thermo-electric materials, together with solid solutions
of ZnSb and CdSb, etc.
In the concluding session Dr. Tauc, Professor Bardeen and
Academician V.M. Vul gave a critical evaluation of the
scientific value of the conference and Doctor Matyas, the
Secretary of the conference, dealt with organizational aspects.
Professor Zachoval acted as Chairman.
,rhe conference was a great success from all points of view.
Card 5/5

Z/039/62/023/005/001/004
D291/D301
AUTHORS: Frank, Helmart Doctor of Natural Sciencesp and
Vik ',`6~rap ~olavp Engineer
TITLE: Determining the average impedance of conductors and
PERIODICAL: Slaboproudk obzor# v. 23, no. 5, 1962, 252 - 257
TEXT: The article deals with solutions of Maxwell eauations for a
homogeneous cylinder with a
,,,jbitrary electrical conductivity which
1c; inserted into the HY f d of a simple coil. xelations are deri-
ved for the variation of the Q factor when the cylinder is inserted
into the coilq and simple formulae are given for quick calculation.
The derived values indicate the possibility of determining the ave-
rage impedance of homoGeneous cylindrical specimens by measuring
` a coil on a simple measuring instrument with mini_
the Q factor 04.
mum adjustment. Experimental measurements were made with a TESLA
Brno type Bb1211A Q-meter on a 10 Mc coil, consisting of 9 turns of
1-mm silver-plated copper wirep 17 mm in diameter, having an induc-
tivity of 0.9 pHs The tested specimen was polycrystalline GaAs. The
validit of the method was also corroborated by measuring various
Card 1 2

Z/039/62/023/005/001/004
Determining the average impedance D291/D301
other conductors and semiconductors. It is pointed out that the des-
cribed method is especially suitable for contactless measuring of
the ave.rage impedance of semiconductors since it is very quick and
surfaces are not contaminatedp namely when specimens are wrapped in
polyethylene foil. This measuring method in the field of a coil is
applicable to low impedancesp up to 100 -a cm and frequencies below
100 Mc. The accuracy of this method depends only on the accuracy of
ihe Q-meter used. In case very sensitive Q measuringe are made, the
viethod can be used to determine the nomogeneity of alloys, for mea-
suring the temperature coefficient of metals and alloys, to check
the diameter of metal rods, to measure the quality of silver-plated
surfacesp etc. There are 8 figures and 3 tables. The English-lmgua-
ge reference is: h.V1. McLachlan: Bessel functions for EnGineers.
Oxford, Clarendon Press 1955.
WSOCIATION: V~zkumn~ Astav pro s0lovaci techniku
Yraha (A.S. Popov Research Institute
Engineering, Prague)
A.S. Popova,
for Communication
SUBMITTED: January 25, 1962
CarcL 2/2

Z/037/63/000/00,1/002/008
E-11*0/E235
Re -Im
AUTHOR: Frar* ar
TITLE. Contactless measurement of semiconductor resistance
by eddy currents
PERIODICAL: Ceskoslovensky' c"asopia pro fysiku, no.1, 1963, 13-19
TEXT: Probe measurements of GaAs polycrystalline samples
display very great inhomogenoity. Fig.1 gives the equipotential
curves on a particiilar inhomogeneous sample, 36 rnm long. DC
measurements cannot be used since the material is not subject to
Ohm's law, due to the intercrystal boundary surfaces. A method has'
been developed in which GaAs ingots are introduced into RF coils
and the resistance 'is determined from the change in Q, measured
on an ordinary commercial Q-meter, using the following relation:
QOIQI r1 wit0 where rl
Q0 - Q1 Br 2
0
Card 1/3

Contactless measurement Of Z/037/63/000/001/002/008
E140/L-135
The, method shows high reproducibility, but the absolute precision
depends on the'accuracy with which the ingot dimensions are known,
as well as on the-prooision to which the ingot and coil are
cylindrical.
There are 4 figures and I table.
~ASSOCIATION: V~zkumny'* ~stav pro sd4lovaci techniku A.S. Popova,
Praha
(Telecommunications Research Institute A.S. Popov,
Prague)
SUBMITTED3 September 13, 1961
Card -2/3

Z/037/63/000/001/002/008
Contactless measurement of
Fig-1
m 39 4
Card 3/3

FRANK, Halmar, fUlDr.
-
A simple very high-frequency receiver with a tunnel diode.
Sdel tech 11 no.7t261-263 i1 163.

FRANK,IH., dr.
"Junction transistors" by K. Otto and H. Muller. Reviewed by
H. Frank. Slaboproudy obzor 24 no.I:Suppl.: Literatura 2/+
no01:L59L7 163.

FRANK, H.
O~~ ~- -
*Geriaaniua alloy diffusion transistorom by M.M. Samochvalov
(Samokhvalov, H.M.I. Reviewed by H. Frank. Slaboproudy obzccr-.
Suppl,:Literatura U no.5:L39 163.

ACCESSION PR, AP4ol5898
Z/0039/64/025/001/0025/0033
AUTHORi Franky Helmar (Doator)
TITLEs Measuring the lifetime of minority current carriers in nonhamogenous
5ouiconductor crystals by the phase compensation method
SOURCE: Slaboproudy obzor, Y. 25, no. 1, 1964, 25-33
TOPIC TAGSt electronic measurement, minority current, current carrier,
semiconductor, crystal,.phass compensation. monocrystal
ABSTRACT: A phase compensation method is described for ascertaining the lifetime
of minority carriers as a means or controlling the quality of Si. Go ahd other
monocrystals. The measuring equipment based on this principle (shown in Fig. 2
of Enclosure 01) was developed by the VUST, Prague, and is described in detail
in Zpravodaj VUST. Vol 1, No 1, 1939. As long as the crystals are homogeneous*
the measurement is unambiguous vA the results are reliable. Difficulties
arise in measuring nonhomogenous crystals, even in ease of puxe intansitv
modulation of the light, It Is ahworn that the volume photof-ffect is superimposed
on the normal photooffeat. Because of Inuidnation and the voltage applied to
Card IY;~

ACCESSION NR i AP4015898
the crystal, there may be a difference between the reading on the phase comparator
and the actual lifetime. Reasons for these variations are pointed out. On the
basis of derived equwa=3 and their practical verification, a procedure is
i described for measuring nonhomogeneous crystals. To got proper results it is
necessary to carry out two measuremontst in addition to the values recorded'
on the phase compensator, it in necessary to determine also the values of the
photoolectrio signals, and then to evaluate the measured results as shown in IFU"!
i 14 of Enclosure 02. The described method is simple and fast, and the errors do
not exceed 10 percent. Orige 4rte has 14 figures, 33 formulas# and 3 tablese-
i ASSOCIATION: Vyzk=rq ustav pro sdelovaci tachniku A*-S, Popova, Prague.,
(Research Institute for Cannudoations Engineering)
SURU=s 29majY63 ]UTZ ACQ: Djob& EM: 02
SUB CODE: GE PH NO REF'SOVI 000 OTUR t M3
Card 2/Xp-

I.
The rotation of crops. p. 6. (Mafyar Iezovazdasar, Vol. 11, no. 2, Jan. 1956 PjjdapeEt)
SO: l'onthly Li,,t of -East European Accer-sion ( :FAL) 1C. Vol. 6, '10. 7, Jul- 195". Uncl.
I . ~ t

.FIUNK, 1.
Bearings made of artificial material for rolling mills. p. 100.
On technical books. p. 104.
KOHASZATI LAPOK. (Magyar Banyaszati es Kohaszati Egyesulet) Budapest.
Vol 11, no. 3, Mar 1956.
SOURCE: EEAL, Vol 5, no. 7, July 1956.