SCIENTIFIC ABSTRACTS ABDULLAYEV, G, - ABDULLAYEV, G, B.

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• Collection: Scientific Abstracts
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• Release Decision: RIF
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• Document Creation Date: November 2, 2016
• Document Release Date: April 3, 2001
• Sequence Number: 1
• Publication Date: December 31, 1967
• Content Type: SUMMARY

ABDULLAYNY, G., Geroy Sotsialisticheakogo Truda; GRUMMIN, A., red.;
ABBAZOV, T., tekhrod.
[Vulfilling the seven-year plan in two years; practices of the
Karl Marx Collective Farm in Kalinin District.of Tauhkent
Province] Semilatku - v dva gods; opyt kolkhoza Im. Karl&
Markea Kalininakogo rsiona Tashkentskoi oblosti. Tashkent.
Goo.izd-vo Uzbekskoi SSR, 1960. 39 P. (NDU 14:2)
1. Predeedatell kolkhoza im. Karla Karkes Kelininakogo rayona
Tashkentskoy obleati (for Abdulloyev),
(Tashkent Province--Collective farms)

USSR / Cultivated Plants* Fruit Treese Small Fruit M
Plants. Nut Trees. Tea.
Abs Jour : Ref Zhur - Biologiya, No 6, 1959, No. 25o62
Author : Abdullayev,,.G. A.
Innt : Institute of Tea and
Subtropical Cultures
Title : Growth and Fruit-Bearing Biolo6y and
Morphology of the Lemon Tree's Different
Varieties in Young Age
Orig Pub : Byul. Vestno n.-i. in-ta chaya I subtrop,
kulltur, 1957, No 3, 131-151
Abstract : Investigatory data of 5 varieties and 2
specimens of the lemon tree were oubmItted,
as a result of which tho characteristics
of those varlotles are somewhat completed.
Card 1/1

ABDULLAYEV C. A.: Master Biol Sci (diss) -- "The biology and morphology of the
~-~
growth and fruit yield of various types of lemons when young". Tbilisi, 1958,
published by the Georgian Agric Inst. 16 pp (Georgian Order of Labor Red Banner
Agric Inst), 100 copies (KL, No 8, 1959, 135)

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1. ADDULLAYEVo 0.
2. USSR (600)
4. Semiconductors
Study of the effect of temperature on the jumD of the potential in a
semiconductor on the boundary with a metal.*
Trudy Inst. fit. i mat. AN A2erb. SSR No. 5, 1951
9. RogIbly List of Russian Accessions, Library of Congress, March 1953, Unclassified.

Arl rt L"'.Y,vn. T,
USSR/Electricity - Literature Dee 52
"New Books on Electricity, Electrical Engineering,
and Electric Power Engineering, Published In 1952"
"Elektrichestvol' No 12, 1) 89
Lists 17 titles published in 1952, including the
following: "Electronic Semiconductors and Their
Applications"' Elektronnyye poluprovodniki i ikh
irlm-e-ne-niye-Tj, 56 pp, by G. M. Abdullayev; and
"Synchronization of 1nduc1-io-n-R-oYo-r-s-Vy--Ehe DAG
System" ("Sinkhronizatsiya asinkhronnykh dvigate-
ley pa skheme DAG"), 84 pp, a short unnual by
1. B. Uvarov and L. N. Afanas,yev.
242T34

UM/Physics *- Sem-4conductors, War/Apr 52
Potential Surge
*Tm*estigating the Temperature Dependence of a Po-
tential jtmp (Surge) at the Electrode in Cuprous
Oxide," G.M. Abdul-layev, Inst of Phys and J&th, Acewd
Sci Azerbayd%han SSR
"Iz Ak Nauk, Ser Fiz" Vol XV1, No 2, PP 225,226
Exptl research of high-tension polarization in hole
semiconductors, cuprous oxide and selenium, at temp
of liquid air was performied by V.I. Lyashenko, G.A.
Gedorurus ahd Z.P. Felvashnikova ("Iz Ak Nauk. Ber
Piz" 5, 641, 1938; 5, 4-5 1941); they found a
potential surge at the anode. Author studied
this phenomenon at room temp, in various elec
fields. He found an increasing surge with de-
cr*asing temp. Indebted to Kh. 1. Amirkbanov.
2201'97
M
Q

D U L L 'v)'
Ram a AMUZ&AMO Gob= Sm &.0ally
Dissertation a Investigation of physienl processos ocaurring in
solonium rootifiera
Degrees Doc Zhys-ldat Sei
Affiliationt Inst of Fhysids and PhthemticsAcad Sci
A:terbaAzhan SSR
Def--.Asa DaiG,~ Plaaet 9 My 54# Oounail of Leningmd 1-7hys-Toah Inst
Aoad Soi USSR
Oartifioation Dates 23 Nhr 57
Sources BWO 14/57

ABWlJAYW,G.; ZETNAUN,A.; RAKIDOV,K.
Rffect of I ra3o on perforated and electron transition. 1xv. AN
Azerb. SSR no.11:61-67 N151k (KW 8:11)
(Semiconductors)

ABDULIAYEV, G.; AIUYXV, M.
Determination of L from volt-ohm characterlstIcs of selenium
XT
rectifiers. Izv.AH Azerb.65R no.5:3-10 May '55. (MLHA 9:5)
(Y-lectric current rectifiers)(391ectric conductivity)

112-6-11a43
Translation from: Referativayy zhurnal, Elektrotekhaika, 1957, Nr6, p.9 (USSR)
'
AUTHOR: Akbundov, G.
Abdullayev, G.~
TITLE: Investigation of Conductivity and Thermo-e.m.f. of Some Semiconductors
(Issiedovaaiya elektroprovodnosti i termo-e.d.s. nekotorykh poluprovodaikov)
PERIODICAL: Izvestiya AN Az- SSR, 1955,NrI2, pp.3-16
ABSTRACT: Determined were the el. conductivity and thermo-emf of the electron synthetic
semiconductors SnSe and Bi2S3, which were of interest because thin layers of
these compounds are formed in selenium rectifiers, and PbS and Mo,~ (possibility
of using these natural minerals for transistors were explored). The measured
values of electric conductivity in lo-3 ohm-1 cm-l units are:
SnSe from 5.128 at 200 to 166 at 3000
Bi2S3 from 0.2 to 77
PbS from 107.6 to 1755 at 2900
M032 from 0.1151 to 6.289
Ac,tivation energy values are computed. Curves of thermo-emf plotted agaiust
temperature for the above semiconductors are given. Bibliography: 4 titles.
Card VI
X. A. B.

V
112-2-V73
TRANSLATION FROM: Referativnyy zhurnal, Elektrotekhnika,
1957, Nr 2, p 247 (USSR)
AUTHOR: Abdulayev, 0. B.
TITLE: e Redistribu ion of Impurities During the Forming of
Selenium Rectifiers (0 pereraepredelenil primesey pri
formovke, selenovykh vypryamiteley)
PERIODICAL: Izv. AN Azerb. SSR, 1956, Nr 2, pp. 3-9
ABSTRACT: The opinion Is expressed that the increase in forward
resistance during forming under high voltage is caused by a
decrease In the concentration of haloid impurities in the pn
junction which takes place under the effect of a strong electric
field. It is also maintained that the subsequent recombination
is due to reverse diffusion and to more even distribution of the
impurities. High-voltage selenium elements have been produced in
which the basic selenium mass contained haloid Impurities. There
was no impurity in the junction layer between the 8elenium-and
the electronic semi-conductor. Selenium was cry8talized with
the haloid impurities and maintained at a temperature of 214*
fo r 16 hours after which a sulfide or cadmium selenide layer
Card 1/,2

112-2-4273
The Redistribution of Impurities During the Forming of (Cont)
and an upper layer of a lead-cadmium alloy were applied. Before
forming the elements had good parameters. After the usual form-
ing they acquired high-voltage characteristics and the forward
resistance decreased or remained unchanged. The forward resist-
aijoe increased after forming at 100 to 110 volts. If a layer of
pure selenium is applied between the layer of selenium with im-
purities and the sulfide or cadmium selenide layer, the for-
ward resistance drops by 15 per cent after an hour forming. This
is due to the more even distribution of the impurities in the
selenium during the fbrming and can be verified by calculating
the resistance of the selenium. Constant forward resistance
after forming can be explained by the fact that increased fa *r-
ward resistance due to increased thickness of the electron semi-
conductor layer Is balanced out by Its subsequent decrease as a
result of more even distribution of the impurity concentration.
Seven bibliographic entries.
E. N. U.
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SOV/ 112 -57 -6 -13105
Translation from: Referativnyy zhurnal. Elektrotekhnika, 1957, Nr 6, p 207 (USSR)
AUTHOR: Abdullayev, G. B.
TITLE: DEre-r ilgfirg-ihe components of an Equivalent Electric Circuit for a
Semiconductor Rectifier (Ob opredelenii sostavlyayushchikh ekvivalentnoy
elektricheskoy skhemy poluprovoctnikovykh vypryamiteley)
JWBL-
PERIODICAL: Izv. AN AzSSR. 19 5 6' 7W 3, pp 3 - 10
ABSTRACT: An equivalent electric circuit of a selenium valve is considered; the
circuit comprises resistance R and capacitance C of the barrier layer and the
selenium resistance r connected in series with the above two components. The
valuep of R. C, and r can be determined by the substitution method on a
conventional AF bridge; however, the method gives ambiguous results. To
determine the values graphically, by means of impedance circle diagrams, is
cumbersome and inaccurate. A different method of measuring R, C, and r is
described which is based on the fact that at low audio frequencies R >> r, while
at high frequencies the main part is played by r, as R is shunted by the
Card 1/2

SOV/112-57-6-13105
Determining the Components of an Equivalent Electric Circuit for a Semi-
capacitance C. The experimental outfit -- a modified Wien- bridge for
50-100,000 cps - is briefly described. The values of R and C at 300 cps and
of r at 100 kc were determined by the substitution method. The error in
determining r was less than 10%. The values of R and r determined by the
above method agree well with those determined from the circle diagram. The
results are reported of determining the thickness of electric -semiconductor
artificial layer on the selenium valve by means of measuring its capacitance
by the above zy-ethod, and also by a weighting method and an optical method.
Simultaneously with the spraying of the electron semiconductor, the layer
thickness on an adjacent control klass plate was determined optically by means
of an interferometer microscope. Results of measurements by all three of the
above methods agree satisfactorily. Bibliography: 7 items.
E. N. U.
Card Z/2

- f~g
t.
USSR/Electr city Semiconductors G-3
Abs Jour : Referat Zhur - Fizika, No 5) 1957, 12197
Author : Abdullayev) G#B,
Inst
Title Electron-Diffraction Investigation of the Structure of the
Rectifying Contacts of Selenium Rectifiers.
Orig Pub AzerbSSR elmler Akad. kheberlere, Izv. AN AzerbSSR, 1956,
No 4, 15-24
Abstract Using electron-diffraction an&lysis~ an inveat'iption was
made of the composition of the contact between Se and Cd,
obtained by evaporating them in vacuum on each other, or
by contact between plates of cadmium and selenium. It
turns out that CdSe is produced upon subsequent heating
of such specimens to 120 -- 1400, or upon passage of a
forming current through the contact. Analogous experi-
ments were carried out with a contact of cadmium with sul-
phur. An electron-diffraction investigation has shown
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USSR/hlect~icity - Semiconductors G-3
Abs Jour Ref Zhur - Fizika, No 5,, 1957, 12197
the formation of CdS. CdS was also formed upon contact
between a plate of cadmium vith the sulphur-coated sur-
face of a selenium element and subsequent electric for.
ming. Upon investig&tio;*: of shop selenium elements un-
der an upper electrode, consisting of tin and cadmium,
formation of CdSe and CdS was observed, It is concluded,
that in selenium rectifiers, the rectification takes pla-
ce on the boundary between the CdSe and Se.
Card 2/2

Soy/ I I Z-58-Z-2959
Tian.slation from: Referativnyy Elektr~,-tekl%-.Aha, 19.58. N. 2, p 18Z (USSR)
AUTHOR: A).-d-a...,.ayev. G. B. I P-nd Al-iiyev, M. G.
TITLE: On t!,e Forming o! Sul-fur-Coated Selenium Rectifiers
(0 proteesse iorniovki osernennykh selerovykh wypryarniteley)
PERIODICAL: Tr. Ln-ta fiz. i matem. AS AzerbSSR, 1956, Yol 8.
pp 5 -12
ABSTRACT: VLe effect of sulfur purity orn the forming and cb-ar.,3.ctemistics of sele-
Txi--,m rectifier's 'has beezi clezified; a sele-.1r2m s,2---face hag been treated with
walfuz, v2-p~~r prior to being coated w-,t!i the counter-electro-ie. Rectifiers
tzeated with,. p-arified ar-Ifur vapor lvtve showa Z ~:,e%terse c,,!,rrert during
the fc~rmirxg and. ale-) smaller farward a-ad reve.-se resista:acea. An Lacrease
:-r, t1te reveree curreat with a loweriag of t1te amt.ient temperat-,i.~e has been ob-
i.,exved at hdgl.er vc,".ages a--id lower temperat-tres t~.a-LL tl~lose of
tre3ted w-;,,,I-t ric1-----P1-,:!-.f.ied sulfur vapor. Yoltage-curre:i`.- a-ztd. ternperat,i.~-e
are given.
S. M. A.
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ABWLLAYXV G B.; AKUNDOV, G.A.; ALIYXV, M.G.
="4LZZZ_
Machanism of intensive field effects in p-n Junctions. DAL AN
A2erb. SSR 12 no.11:787-791 15'.6. (MLRA 10:3)
1. Institut fitiki i m&tematiki AN A arbaYdzhanskor SSR.
(Seminnnall&tn-l

90)
SOVI 112-59-1-1602
Translation from: Reb-rativ~nyy zhurnal. ElektrotektuAka, 1959, Nr 1, p 226 (USSR)
AUTHOR: Abdullayev, G. B.
TITLE: In-WITlgation of Physical Phenomena in. Electron-Hole Junctions
PERIODICAL: Tr. i-y nauchn. sessii Soveta po koordinataii AK AzerbSSR. Bakil,
AS AzerbSSR. 1957, pp 39-47
ABSTRACT: The nature, mechanism, forming, and de-forming of the barrier
layer in Se-rectifiers were investigated. Experiments were conducted on both
industrial and laboratory Se-rectifiers. The Se-rectifier functioning is due to
its electron-hole junction. This jimction is formed by the top electrode and is
perfected by the forming process. The highest rectification factor can be
obtained from Se-rectifiers with a top electrode from Cd or CdS. It was found
that CdSe and CdS layers formed at the Se-boundary are electron-type semi-
conductors. Hence, in contact with Se, which is a hole-type s emi conductor,
type p-n junctions are formed. An electron -diffraction study showed that CdSe
Card 1/3

SOV/112-59-1-1602
Investigation of Physical Phenomena hi Electron-Hole itmctions
and, CdS layers are hexagaaal modificatio.". The optimurn thickness of the
electron semiconductor, which correspezids to the maximum rectification
fACtOr, is 5x 10-5 cm. Rectifiers with a rectVication factor of about 106 at
I v were constructed artificially. Such recti-fiers have, all 18 N, - the working
vc1tage of convertional Se-elements --- a repistance 150 O.rnes that of
commercial rectifiers. Studying the structu-re of the barrier layer yielded
knowledge of pLysical, phenomena occurring in the layer. Stat'c volt-ohm
characterist--cs were ex-pJair-ed, and empirical formulae for conductance-fteld
relations obtained. The inversio-a voiat of the temperature coefficient of the
backward resistance of Se-rectifiers can be varied bv the thickneBs of the
electron layer of the sendco-nductur. ir-quence o--' the halogen content of Se
Upon the forward resistance of rectifieru was found. The experiments showed
that de-forming and internal slhc~xt-circufting of Se-rectifters are due to an
intrinsic EMF ar.-*LL,;ng as a zesult of oxidation of CdSe and CdSlayers in air
Card 2/3

SOV/IIZ-59-1-1602
Investigatioa of Physical Phenomena in Electron-Hole Junctions
followed by galvanic pheuomena prompted by humidity. This results in
dendritic formations and leads to short-circuiting. It is recommended that
Se-elements be protected from air humidity to prevent de-forming and short-
circuiting.
B. G. Zh.
Card 3/3

I~Mwvswmeg

XULIYXV, A.A.; ABDULLATEV, G.-B.
Studying the diffusion of some metals in selealu, with the aid of
radioactive Isotopes. DokLAX Azorb.SSR 13 no.7:727-731 157.
(MLRA 10:7)
1. InstitutIffsW t matemattki.
(Selenium) (Diffusion) Neta'18)

BASHSHALITEV, A.A.; ABIV~-WT-gy
?Affect of temperr~ture on the heAt conductivity of selenium contgjaing
admixtures of bromine. DokI. AN Azerb. SSR 13 no-8:831-836 '57-
WRA 10: 9)
1. Inatitut fisiki i matematiki Azerboydsbanskoy SSR.
(Heat-Conduction) (Selenium) (Bromine)

MME
- - - - - -7
- , , '. - "')
AKHMOV, G.A.'; 4BDULLUMV, G*B.
-
Stud~lrg the diffusion of tballium, tin, and
Dokl. AN Azerb. SSR 13 no.11:1145-1148 157.
Indium In selenium.
(MIRA 10:12)
1, Institut fiziki i mteawtiki. AN AserSSR.
(3blentun) (Diffusion) ' (Metals)

AUTHORS AbdulljLyeY,.,G.B.,Bashahaliyev A.A., 57-9-8/40
TITLE -TH-e-TUTu-b-noe of' Bromine Adidixtures on the "eat Conductivity of
Selenium.
(Vliyaniye primesey boogs:'6 ttploproyodnost' selena.-Russian)
PERIODICAL Zhurnal Tekhn.Fiz.,1957,Vol 21, Nr 9, pp 1971 - 1975 (U.S.S.R.)
ABSTRACT First,the experimental plant ind the order in which measurements
were carried out are desoribq~,after which the results obtained by
inTOStigatione are dealt with~ It is shown that pure amorphous se.
lenium possesses the highest d1gree of conduotivity,whioh amounts
to 3,o8.lo-3 cal/degree.om sec:~if the bromine content is increased
up to O,o606,it is re
,du"d down.~to the minimum (1,37-lo-3 oal/degree.c
.cm.sec. A further :~ficreasi_-dVthe concentration of the bromine
leads to an inoreas-i of heat conductivity,which approaches the ori-
ginal value witho4t~)howeTer,attaining it (2o424-10-3 oal/degree cm.
sec.) The same govei~ping rules were found to prevail in crystalline
selenium with different bromine ooncentration.It is shown that the
modification of hea.'t conductivity in dependence of the bromine con-
tent is determined also ir4orystallization mainly by the conditions
of dispersiontor the phonons.The admixtures introduced into sele-
nium.diminish the free length of path of the phonons and thus also
reduce the share of phonons in heat conductiyity.Up to a content of
O,o65% bromine in selenium reduced the concentration of theaddi-
tional centers for the dispersion of phonons and reducee the heat
conductivity of selenium.The increase of heat conductivity in the
Card 1/2 case of a bromine oontent of more than O,o65% ia explained by the

The Influence of Bromine Admixtures on the 8eat Gvon- 57-9-8//40
ductivity of Selenium.
fact,that in the case of great bromine concentrations, the admix-
ture density causes the formation of non-active bromine molecules.
On this occasion the number of dispersion centers is reduced,which
leads to an increase of heat oonductivity.The fact that the amount
of heat conductivity is always less than in the case of pure se-
lenium proves that th+eutral bromine molecules which are formed
produce additional dispersion centers of the phonons.
There are 3 figures and lo Slavic references.
ASSOCIMON Physical Institute AN Azerbaidzhan SSR
(Institut fiziki AN AzS$R,Baku)
SUBMITTED September 10,1956
AVAILABLE Library of Congress.
Card 2/2

ALITHM, ABDULLAYEV,G.B., ALIYEV,M.I.
TITLEs _Th-e7fFu-r_m'a_1_C_Tnductivity of
Iodine. . (Vliyaniye yoda
PERIODICAL: Doklady Akademii Nauk SSSR,
(U.S.S.R.)
ABS-2RACTt
Card 1/3
20-5-21/60
Selenium as Affected by
na teploproyodnost' selena, Russian)
19571 Vol 114, Nr 5, PP 995-996
At first the results of some previous papers are given. The in-
fluence exercised by various admixtures on the thermal conduc-
tivity of selenium has not yet been investigated. As an admixture
of iodine increases the electric conductivity of selenium a
hundred- and thousand-fold, also an influence exercised on the
thermal conductivity of the selenium is to be expected. For the
investigation of this influence the authors produced admixtures
of selenium with 0,0691 0,1031 0,2431 0,534; 0,777; 0,9231
1,257; 1,385 %. From these admixtures cylindrical samples with
a diameter of 20 mm and a height of from 5 to 9 mm, were produced.
The results of the measurements of thermal conductivity are shown
in form of a diagram. Crystallization of the samples took place
at 2140. In a second diagram the dependence of the th4rmal
conductivity of the crystalline selenium on the amount of the
iodine admixture is shown. The dependence of the thermal con-
ductivity of the amorphous as well as of crystalline selenium on
the amount of the iodine admixtures is of the same character.
The atomic chains aro not ordered in amorphous selenium. On the

20-5-21Ao
The Thermal Conductivity of Selenium as Affected by Selenium
Admixtures.
occasion of its cry3tallization ordered microcrystalline domainz
are formed, which diminishes the concentration of the defects
which are scattering centers. Therefore the free lcn~;th of path
of the phonons and the degree of anharmonic oscillations increases.
Consequently, the thermal conductivity increases with cryatalli-
zation. The heat capacity of the crystalline selenium is lower
than that of amorphous selenium. The heat capacity of the
amorphous and crystalline samples, investigated in the domain
domain of concentration of the admixtures does not depend upon
the amount of iodine. Xhe heat capacity for the amorphous samples
amounts in the average to 0,118 cal/g,& and for the crystalline
samples to 0,0701 cal/a A. '2ho admixture of iodine increases the
concentration of the admixture centers of the phonons and pro-
duces points oft.hermal resistance. With an increase of the ad-
mixture atoms the number of points where destruction takes place
and of scattering centers increases, which causes a decrease of
the thermal conductivity of the selenium, and a minimum is
attained. With a further increase of the admixture atoms the
Card 2/3 iodine atoms begin to accumulate at the places where destructions

20-5-21/60
The Thermal Conductivity of Selenium as Affected by Selenium
Admixtures.
and distortions took place, and recombination of iodine atoms
into molecules begin. 'this weakens the scattering of the phonons
and diminishes the degree to which oscillations are anharmonic
and therefore increases the thermal conductivity of selenium.
(With 2 illustrations).
ASACIATI~,Nt Inatitute for Physics and 4athematics of the Academy of Science
of the U.S.S.R. of Azerbeidzhan. (Institut fiziki, i matematiki
Akademii nauk Azerb. S.S.R., Rusuian)
PRESENTED BYz Member of the Academy A.E.IOFFE
SUBLUTTED: 24-11-1956
AVAILABLE- Library of ConCress
Card ~/3

AUT HORS: Aliyev, G. M., and Abdullayev, G. B. 2o..4-20/51
TITLE: A Note on the Influence of a Chlorine Admixture on the Thermal
Conductivity of Selenium (0 vliyanii primesi khlora na teplopro-
vodnost' selena).
PERIODICAL*. Doklady AN SSSR, 1957, Vol. 116, Nr 4, PP. 598-6oo (ussR),
ABSTRACT: The thermal conductivity of semiconductors and its dependence on
the chemical composition and on crystal structure was investigated
by A. F. Joffe and his students (reference 1, 2, 3) 4). In the
production od selenium rectifiers admixtures of halogenes, in par=
ticular chlorine, are used for the purpose of increasine the cur-
rent passing through the semiconductor. The experiments showed the
following results. During the electric formation and the further
continued operation of these rectifiers a redistribution of the
admixtures takes place, which modifies the electric and thermal
characteristics of the selenium layer and of the system as a whole,
In the backward direction the voltage applied to the rectifier iB
localized almost entirely-at the anode at the electron-hole transi-
tion because of the formation of a great resistance. This causes
a temperature gradient along the semiconductor, The author3 deters
Card 113 mined the coefficient of thermal conductivity by a stationary mem

A Note on the Influence of a Chlorine Admixture on the Thermal 2o-4~/91
Conductivity of Selenium.
thod by means of a cylindrical set up, containing a sensitive semin
conductor ring for the removal of lateral heat losses, A diagram
illustrates the curves of the modifleation of heat conductivity of
selenium and its dependence on the chlorine content from 2o to 220C.
The different curvemare related to vitreous and crystallised se-
lenium. The course taken by these curves is independend of the dem
gree of crystallization, but depends only on the admixtures, The
heat conductivity decreases as far as 0,03%at an increase of the
chlorine content, then it increases again and remains constant above
a value of 0,50/o - A similar dependence of the heat conductivity was
found by the author in the case of iodine and bromine admixtures.
The dependence of heat conductivity on the degree of crystallization
is mainly determined by the conditions of the scattering of the pho-
nons with increasing concentration of selenium the concentration of
the admixtures is decreased and there with the mean free path of
the phonoms increases. By this, the frequency of their scattering
decreases and the anbarmonicity degree of the oscillations and there-
fore the beat conductivity increases. The authors here evaluate this
influence of the modification of the free path and the numerical
Card 20 valuesj which were found, are given. On crystallisation the free

A Note on the Influence of a Chlorine Admixture on the Thermal 2o-4-20/51
Conductivity of SeleniumG
path of the phonons shows a greater increase than their velocity@
The heat conductivity of crystalline selenium, so to speaks is made
up from the heat conductivity of the intercrystalline armorphous
Interpomod layers and from the heat conductivity of the microcry-
stals.
There are 1 figure and 5 Slavic references.
ASSOCIATION: Institute for Physics and Mathematics AN of the Azerbayizhan SSR
(Institut fiziki J matemattki Akademii nauk Azerb SSR).
PRESENTED: May 1.3, 1957, by A. F. Ioffe, Academician.
SUBMITTED: April 13, 1957.
AVAILABLE: Library -C Congress.
Card 313

ALIM, M. -, ABIXJLIJnV, G. -. KIRZOY.EV. B.
Conductivity of p - n junction of selenium rectifiers at strong fields
and different temperatures. Izv.AN Azarb.SSR.Ser.Fis-takh. i khim. nauk.
no.1:17-47 158. (MIR& 12:3)
(Selenium) Ollectric current rectifiers)

69396
SOV/137-59-4-8423
Translation fromi Raferativnyy zhurnal, Metallurgiya,.1959, Nr 4,.p 155 (USSR)
2`1`77 DO
AUTHORS- Aliyev, G.M.p Abdullayev 0 B
T"31M The Effect of the Admixture of Chlorine on Electric Properties of
Seleni
- -V ~ V1
PERIODICALs Izv.AS AzerbSSR, Ser. Piz-tekhn. I khim. n., 1958, Nr 4, pp 23 - 30
(Azerb. r6sum6)
AR7MCTs The authors investigated changes in electric conductivity 0 and themo-
,emf Q~ of Be depending on Cl concentration (0.0035 - 0.5%) and tempera-
ture. Crystallization of a smelted Se and SeCl mixture was carried
out under pressure first at 1300C, then at 20008 (40 minutes each). Cl
admixture up to 0.125% raise a of Be (up to 1,000 times) the maximum
is attained at 0.125% an then 6 decreases with higher Cl amount. Hole
conductivity is preserved. The coefficient 0( within a range of 25 -
850C increases with elevated temperature. Electrooondudtivity in this
-QW&=PA2- range of both pure and admixed Be increases with raising temperatures.
according to'the exponential law. If the Cl amount Increases, dissociation work and
coefficient M decrease, and concentrAtion and effective mobility of charge carriers
increase. It Is conoluded that admixtures of Cl cause the formation of additional
energy levels In Be, which are arranged at the upper boundary of the filled-up zone..

ALIYABOYA, Z.A,; ABDUIJAYRY, G.B.
Investigation of the diffusion of some elements in
salonium Lin Aserbaijani with summary in Russianj. Izv. AN
Axerb. SSRv der. fix*-takh. i khtm. nauk no.5:7-13 158.
kNIRA 12:1)
(Selenium) (Diffusion)

BAKIROV, M,T&.; TALDI, M.Ae; ABDULLATV, G.B.
Zffect of the electroforming, thermo-and electrochemical processing
on physical processes occurring in selenium photoelectric cello [in
Aserbaijani with summary in Russian]. 1xv. AN Aserb. SSR. Ser.f12.-
te)di. i khim.nauk no.6:43-53 158- (MIRA 12:2)
(Photoelectric calls) (Selenium) (Ilectrochemistry)

D V L L Y E. V (~~r
0 SOV/137-59-5-10665
Translation from: Referativnyy zhurnal, Metallurglya, 1959, Nr 5, P 172 (USSR';,
AUMORSi Aliyev, G.M., Abdulayev, G.B.
TITLE: on the Effect of Chlorine Admixtures on the Heat Conductivity
of Selenium yk
PERIODICAL- Tr, In-ta fiz. i matem. AS AzerbSSR 1958, Vol 9, pp 20 - 26
(Az-e-r-F r6sum6)
ABSTRACT: The atuhor used the method of the stationary thermal field to
investigate the effect of the admixture of 0.0035 - 1% Cl on
the heat conductivity of Se. It was found that the heat con-
ductivlty minimum was attained with a 0.03% C1 concentration.
After the Cl concentration was as high as 0.5%, the beat con-
ductivity approached a constant value butcUd not, however,
attain Its initial value. The course of the heat conductivity
curve does qualitatively not depend on the So recrystallization
and is explained by the presence in Se mainly of phonon heat
conductivity and by changes in the cross section of phonon
Card 1/1 scattering depending on the C1 concentratior. A.L.

TALIBI, M.A.; ABDULIAYNT, G.B.
Nteridning the electromotive force and resistance of selenium
rectifier calls subjected to radiation. Dokl. AN Azerb. SSR 14
no,1:3-7 158. (MIRA 1112)
1. Institut 'Aiziki i matematiki AN Amerbaydzhanakay SSR.
(Selonium calls) (Photoolectricity)

SOW 137-58-9-19704
Translation from: Referativnyy zhurnal, Metallurgiya, 1958, Nr 9, p 225 (USSR)
AUTHORS: Akhundov, G.A., Abdulla
TITLE- On the Diffusion of Cadmium and Tin in 0 *ie Cd-Sn Alloy (0
diffuzii kadmiya i olova v splave Cd-Sn)
PERIODICAL: Dokl. AN Azerbaydzhan SSR, 1958, Vol 14, Nr 2, pp 103-104
ABSTRACT: The determination of the parameters of diffusion of Cd and
Sn in the industrial alloy of 32% Cd - 68 ~f Sn (used in Se recti-
fiers) was carried.out with the aid of Cd 15 and S013 isotopes
by the layer-removal method. Diffusion annealing was con-
ducted under vacuum for ZO-50 hours at 50-1601C. The follow-
ing coefficients of diffusion were foun& cdcd~ 4.43-10-8 exp
(-4500/RT) and cdSn~ 5.92-10-7 exp (6700/RT~ cm~sec
R.O.
1. Cadmium-tin alloys--Analysis 2. Cadmium--Determination 3. Tin
--Determination 4. Cadmium isotopes (Radioactive)--Performance
5. Tin isotopes (Radioactive)--Performance
Card 1/1

TALIBI, H*A&; ABDULTATST, G.B&
Ir, ~
Wculating the efficiency coefficient and quantum yield of barrier-
layer photocells produced upron the incidence of penetrating radi-
ations. Dokl. AN Azerb. SSR 14 no,'3:201-205 158, (HIU lV4)
1. Institut finiki i matematiki AN AzerSSR.
(Photoelectric cells) (Gamma rays) (X rays)

TALIBI, M*A.; ABDULLATEV, G.B '..
www~14~.?
__Mwrvp,5,
Ap-pMeMbIlity of the theory of the barrier-layer photoolectromotive
foroo to selenium calls. Dokl. All Azerb. SSR 14 no.6:425-428 158,
(min 11: 7)
lolustitut fiviki i mtemattki AN AzorSSR.
(Selenium calls)

ALITEV, H.G.; ABDULLAYRY, G*B-
Selenium rectifier witb a sine cathode. I)Okl.AN Azerb.SSR
15 no.8:653-655 '58. (MIRA 13:1)
(Electric current rectifiers)

ABIXJLIAYXV, G.B.; ALITCV, G.M.; CHETVnl]DDV, M.
Influence of Ga and Fe Impurities on the thermal conductivity of
germanium. Zhur, takh. fit, 28 no,11:2368-2371 N 158,
(MIRA 12: 1)
(Germanium-Thermal properties)

AUTHORS: Akhundov, G. A., Abdullayov, G, B. 2o-119-2-2o/6o
TITLE: Investigation of the Diffusion of Components in Tl 2Be by
Means of Marked Atoms (Izucheniye diffuzii komponentov v
T12Be metodem mechenykh atomov)
PERIODICAL: Doklady Akademii Nauk SSBR, 1958, Vol 119, Nr 21
pp 267 - 267 (USSR)
ABSTRACT: The physical propertieo-of semiconducting compounds strongly
depend on small and very small deviations from the stoichio-
metric ratio, especially on the surface of the semiconductor.
In semiconductor apparatus, especially in selenium rectifiers,
the semiconductor is constantly in connection with a metal and
therefore a chemical compound forms. The density and the phy-
sical properties of this compound determine the characteristics
of the apparatus. In the thallium rectifiers the thallium is
in contact with selenium and obviously a thin layer of TI 2 Be
is formed. In connection with the investigation of the physi-
cal processes in thallium-selenium. rectifiers it was of inter-
Card 1/4 est to investigate the diffusion of the single components in a

2o-119-2-2o/6o
Investigation of the Diffusion of Components in Tl 2 So by Means of Marked
Atoms
T12Be-semiconductor as function of the temperature. The
samples were produced by fusing thallium with selenium, the
corresponding weight ratios corresponded with an accuracy,
of 2.iO-4g to the stoichiometric composition. The synthesis
too place in a vacuum of 10-3mm torr.at a temperature of
450 0 and lasted for 6 hours. From the thus produced Tl 2Be-
-sample some 12 mm long cylinders of a diameter of about 6mm
wer produced and they were ground on both sides with emery-
paper.On the one front of these cylinders the radioactive
isotopes TI 204 and Se75 were applied electrolytically. The
diffusion annealing was carried out in evacuated and bealed
ampoules at temperatures of from 150 - 300 OC it lasted for
15 - 20 hours. After annealing the number of impulses from
Card 2/4 the diffttsed through substances was radiometrically determined

20-.U9-2-2o/6o
Investigation of the. Diffusion of Components in T12se by Means of Marked
Atoms
according to the method of the separation of thin layers. The
tozzu.1a. for the calculation of the diffusion coefficient is
put down and shortly explained. From the temperature dependen-
ces of the diffusion coefficient D for the.difftsion of thaiii-
um and pelenium in T12Se the following equations were found:
DT,-,, T12Se- 1.17.10-3e -0,61/kTCM2 see-1;
_O' 58,kT 2 -1
Dae _*!nL .10-5e cm see
'gem 2.25 .9
i.e. for the diffusion of Tl and Se the activation e*rgy
E and the constant Do are equal respectively to 0.61 eV; 1.16.lo-8
cm2 see -1 and.0.58 eV; 2.25,10-5cm2 sec-l. niere are 1 figure and I
reference,'
Card 3/4

20-119-2-2o/6o
Investigation of the Diffusion of Components in T123e by Means of Marked
Atoms
2. of which is Soviet.
ASSOCIATION: Institut fiziki i matematiki Akademij nauk AzerbssR
(Institute f6r Physics and Matbematics AS Azerbaydzhan
SSR)
PRESENTED: October 24, 1957, by A.F. Ioffe, Member, Academy of
Science, USSR
SUBNMTTED: September 6, 1957
Card 4/4

'AUTHORS: Aliyev, G. M., Al,,,Iullayev, G. B. 30V/ 2o- 12 a - 1- 19/63
TITLE: The Temperature Dependence of th., Ther:,,A Conatictivity of
Selenium With Sm%ll Chlorine Ad(litions (0 tenperaturnoy zavini-
nonti toploprovodnouti selena a ;rimenlyu, khlora)
PERIODTCAT.
Doklady kkadenii nauk SSSR, 1958, Vol- 12o, Nr 1,
pP- 76 - 78 (USSR)
A'DSTRAICT The present paper invectii-ates the tcmpeviture dependence of
the thermal conductivity of crystalline selenium, with different
additions of chlorine. Tho samples of dif!'eront chlorine content
were produced of a mixture of selenium tetrachloride and sele-
nium (purity 99,996%). The amount of the chlorine contained
in the selenium was determined areentometrically. The cooffi-
cient of thermal conductivity was determined by menno of the
stationary mf~thod rith a c:' rlindrical ap-aratu3. A dia,-ra-,,, rhows
the tomperature dek,endonce of the coefficicnt of th, thernal
conductivity upon different chlorine contents. Tho coofficient
of thermal condiietivity decreases with riainC temperature.
Only in the cane of pure aa.:ijlcs there is it cnall devintion fron
Ca,, d 1 the lineariLty. Another dinGrari shovi; tYe depondence of the

The Temperature Dependence of the Thermal Cord--ctivit-,iX'~2o-12o-1-19/6 7
of Selenium With Smmll Chlorine Additions
thermal miductivity on the electric condrctivity for samples
of pure selenium as well as for samnplea of different chlorine
content. In all sampler, a linear de,,:endenco exists between
the electric condtictivity and the ther-n-il condtictivity. With
increasing chlorine content the f~lope of the straiZ;ht becomea
less. The straights expresninE; the dci-c-nderce of the Vnermal
conductivity A on the electric conductivity a can be expressed
by the equation A - kcF + c for sw~,.ples with and without chlo-
rine additions, where k and c denote con.,:t.,ints in all samples.
(The corresponding numerical values are riven). At all tem-
perutures the thermal condutotivity in tKe case of an increasing
electric conductivity first decreases Lnd then increases. The
total coefficient of ther,nal conductivity of a body is, an is
known, composed of Vie coefficients of thermal conductivity
dependent on phonons and electrons: X - ~, electron + Xphonon'
In the sanples with and without chlorite additions A electrons
is extre.-.1ely :small which is proved by Vic lack. of any influence
of the na.-retic field on the thcr,~al cordiictivity. A raine of
Cnrd 2/3 temperature increases the ccatitcrin,,, of the phonone on phanona

The Temperature Dependence of the Thernal '-'O.IIllctiv!tYSC)VPO-I'~'C)-l-i~)//63
of Selenium With 5-iall Chlorire Ad%_~itions
z
an #I
d ~hereforo reduces the coefficiert of thor.~Ul condi-,ctivity.
The deterioration of the Volt-Ampe"re charncturiutics of the
selenium rectifiers as a conoe,:xionce of a tomperature rifo
Vnrt%, is de,~)endent on the decre"Inc of the coefficient of
thernpl conductivity of soleniu,..i and Vxrefoe also on the
decrease of the thermal scatterin.6. Selcniun with an addition
of 0,0035i'o' chlorine has itc Oreatest ther:-,al condii-.tivit.-I at
800 (which corresl)onds to the oijerational tc:7..)cr,-.tvre of the
seleniurt rectifiera). There rare 4 fioires t,.nd 13 referencec,
allof which are Soviet,
PREM::TUD Novanber 1, 1957, by A.F.Ioffe, 411.e;-i'~-er, Acale- of Sciencoal
USSI?
"IUBMITTED: October 11, 1957
1. Selenium--Conductivity 2. Conductors--Temperature factors
3. Selenium--Heat transfer 4. Heat--Conductivity 5. Chlorine
--Properties 6. Dry disk rectifiers--Analysis
Card 3/~

28016
S/081/61/000/015/OC)5/139
D B101/B110
AUTHORSi Abdullayev, G. B., Aliyev, IA. I., Bashahaliyev, A. A.,
-ATi-y`sv-,--G.V.-
TITLEs Effect of halide impurities on the physical properties of
selenium
PERIODICALt Referativnyy zhurnal. Khimiya, no. 15, 1961, 29-30, abstract
156196 (Sb. "Vopr. metallurgii i fiz. poluprovednikov". M..
AN SSSR, 1959, 80-88)
TEXT: The authors studied the effect of halide impurities on the
crystallization rate, electrical, thermal, and optica) properties of 6e.
X--ray analysis showed that at annealing temperatures from 60 - 800C iodine
impurities accelerate Se crystallization. In the presence of I and Br, So
begins to crystallize at 60 0C, while pure Se begins to crystallize anly
at 800 C. Halide impurities increase the electrical conductivity of Se by
several. hundred times. The depe-ndence of the hole mobility on the
Card 1/2

28016
S/081/61/000/015/005/139
Effect of halide impurities on the B1OI/BIIO
impurity concentrations shows a maximum. With rising temperature the holle
mobility in pure Se and in Se with iodine impurities increases. while their
concentration decreases. This phenomenon is explained by strtctural
raculiarities of Se which is a polymer, and by the effect of the inter-
crystalline amorphous layers acting as potential barriers. On tran~iition
from the amorphous to the crystalline modification, thermal ccnductivit.y
of Se increases from 3.13-10-3 to 7.01-10- 3 cal/cm-jec-deg (25 C, C). In
this case specJfic heat decreases,. At 640 w/i tho forbiddon-band -Aridth C.!
tile amorphous Se is 1.94 ev, that of crystalline Se (at 680 m~A) is 1.65 :.V.
(Abstracter's notet Complete translation-I
Card 2/2

3~7377
77, S/058/6Z/000/005/119/119
jv - o0 Ao6l/Alol
;
A U U 10 IM) Talibl, M. A,, Abdullayev, G. B.
TIME; Investigating the effect of gamma rays, X-rays, and neutrons on
the electrical properties of the rectifier systems CdS-Se and
CdSe-Se (Theses)
PERIODICAL: Referativnyy zhurnal, Pizika, no. 5, 1962, 31, abstract 5-3-62ts.
(V sb. Votoelektr. i optich. yavlenlya v poluprovodnikakh", Kiyev,
AN USSR, 1959, 4o1)
TEXT: The action of light, gamma and X-rays, as well as of neutrons was
examined in a study of the electrical properties of the semiconducting rectifier
systems CdS-Se, CdSe-Se and their constituents. The characteristics of rectifier
elements and photodiode operation were examined, the values of the rectifier
element cmf and the internal element resistances were determined graphically.
Photoelectric and dark componentt of the electrical conductivity of CdSe poly-
crystals were found to change linearly with an increase of the voltage applied to
the specimen, independently of the nature of operating radiations.
[Abstracter's note: Complete translation] L. B.
Card 1/1

ABDULLAYSV, G.B.; BAKIROV, M.Ya.; TALIBI. H.A.
-, -
.--- Effect of the area and material used in the upper electrode cn
the photoelectric properties of selenium photoelectric calls [in
Asebaijani with summary in Russian]. Izv. All Azerb. SSR. Bar. fig.-
takh. i khim. nauk no.1:7-10 '59. (MIRA 12:6)
(Photoelectric cello)

K&ZIUAY19VA, R.L;ABDULL1LY3ff, O.B.;IMLITIV, A.Aw
Vanoritation of selenium in a vacuum (in AxerbiaJani with suwnaz7
in Russian]. Izv. AN Aserb. SSR. Ser. fiz--mat. I tekh. Muk- no-3-'
39-44 '59 (MIRA 130)
(Selenium)

TALIBI, N.A.; ABDULULTIV, G.B.
Studying the effect of gamma radiation on the semiconductor
systems OdS - Be and CdSe - So, lsv.AN Aterb.SSR.Ser.fis.-
mat.1 tekb.pauk n0.4:23-34 139. (MM 13--2)
(Gam rays) (Semiconductors)

BAKIROV, M.Ya.; ABDULIAYXV, G.B.; 11ASIROV, U.N.; TALIBI, M.A.
Stuwng the effect of certain factorn on the characteristics
of selenium photocells. Izv. All Azerb. SSR. Ser. fiz.-mat. i takh.
nauk no-5:65-74 '59. (MIRA 13:3)
(Sel:enium oells)

BAKIROV, H.Ya.; ABDULIATZT. G.B.; NASIROV, U.N.; TALIBI, M.A.
Iffect of the degree of crystallization of aelenium on the
characteristics of photoelectric cello. Izv. AR Azerb. SSR Ser.
fiz.-mat, i takh. nauk no.5:93-99 '59. (MIRA 130)
(Selenium cells)

KMlYlV, A,A,; ABDULLAlw. G.B.
Investigation of the diffusion of Zn and So in B125o). BiSe, and
CdSb. ?in. tver. tole. 1 no.4:603-605 '59. (MIRA 12--6)
I.Institut fiziki, I matematiki AN Azerbaydzhanskoy SSR.
(Diffusion) (Semiconductors)

C2 ~(. 1?61 0 0 67319
e4 (6 - 1 -8-24/32
AUTHORS: AliYev, X. I., Abdullayev. G. D. sov 181
TITLE: On the Influence of Halogen Impurities Upon Heat Conductivity
and Diffusion6in Selenium PI
PERIODICAL: Fizika tvardogo tela, 1959p Vol 1, Nr 81 pp 1296 - 1298 (USSR)
ABSTRACT: The discovery of a correlation between varioua.physical proper-
ties is of great interest for solid-state physics. According
to A. V. Ioffe and A. F. Ioffe crystal lattice heat conductivi-
ty decreases with increasing aiomic weight of the atomic crys-
tals, mean atomic weight, and atomic weight ratio of the ion
crystal components. V. P. Zhuze and T. A. Kontorova, pointed out
a correlation connecting microstrength and heat conductivit
of the lattice. E. Fermi it (Ref 5
(Ref 4) and Ya. I. Frenke
investigated thermal expansion and conductivity of a crystal
lattice as connected with thermal vibration'anharmony and found
a correlation. The thermal expansicn coefficient is related
2
with the anharmony coeffioient by the formula 6 - kp/ra
Notation: k - Boltzmann constant, r - equilibrium distance be-
tween the particles, a - coefficient of quasielastic force,
Card 1/3 P - anharmony coefficient., Thermal resistance is proportional,,

67319
On the Influence of Halogen Impurities Upon Heat BOV/181-1.,-8-24/32
Conductivity and Diffusion in Selenium
to the square thermal expansionp viz. I/X#vr (MI + M2) T6
holds, MI and X2 denoting the masses of which the lattice con-
sists. Grueneisen found the interesting relation Q/RT - A/6T,
where Q denotes the activation beat during diffusion, R - the
universal gas constant, and A a constant introduced in a previ-
oue paper. A comparison 'between the two last-mentioned equa-
tions indicates a correlation connecting such phenomena as dif-
fusion rate and crystal lattice heat conductivityp i.e., higher
diffusion energy during autodiffuiion increases the heat con-
duotivity coefficient. Thuat in diamond-type crystals (diamond,
Si, Ce) the strength of the lattice interatomic binding de-
creases when proceeding from diamond to germanium ihich entails
a drop in melting temperature. The relation Q a 3b RTmel t holds
where the coefficient b depends on the atomic radius of the
diffusing element. On the other hand, lattice heat conductivity
depends on the character Df the linkage forces in this crystal
lattice, which determine the degree of anhamony of the thermal
Card 2/3 vibrations. A comparison of the three last-mentioned equations.,.,,

67319
On the Influence of 11alogen Impurizies Upon Heat SOV/181--i.-B-24/32
Conductivity and Diffusion in Selenium
shows the following: The higher the melting temperature, the
better muit be heat conductivity. In aulf 4 selenium,kland
qr,
telluriun~lorystalsq melting point and also heat conductivity
rise when proceeding front sulfur to tellurium. In addition,
selenium autodiffusion aotivation energy similarly depends on
the quantity of halogen Impurities. The presumptive reasons
for these correlations are pointed out. Similar studies will
be made also with other impurities. There are I figure and
9 references, 8 of which are Soviet.
ASSOCIATION: Institut fiziki I matematiki AN Azerb SSR (Institute of Physics
and Mathematics of the AS of the Azer~aydzhanskaya SSR).
Azerb, gosudarstvennyy universitat ime S. X. Kirova
(Azerbaydzhan State University imeni S. X. Kirov) L4-11"
SUBMITTED: April 18, 1959
Card 3/3

2.,4, r7 700 66270
BOV/181-1-11-5/27
AUTHORSt Abdullayev, G. B., Aliyev, M. G., Geller, I. Kh.
TITLEt The Influence of Impurities on the Strong Field Effect in
Selenium Rectifiers
PERIODICALi Fizika tyerdogo tela, 1959, Vol 1, Nr 11, pp 1670 - 1675 (USSIO
ABSTRAM A 50P thick selenium layer was deposited by vacuum evapora-
tion on bismuth-coated aluminum base. The first selenium crys-
tallization occurred at 1100C in the course of 2 hours. Sub-
sequently the samples were kept at 2170C for 15 minutes. The
selenium layer was coated with a thin, chemically pure sulfur
layer. The working surface of all samples was 12 5 OM2. Various
series of samples were prepared, first of 99.996~ .0 pure selen-
ium. Next 0.016, 0.032, 0.065 and 0.13 percent by weight of
bromine were added to these selenium samples. The statistical
voltage versus current characteristic was measured in the con-
ventional measuring arrangement. Figures 1, 2 and 3 graphi-
cally present the results in the temperature range -1850 to
+400C for the relations lgRt fU and lgR:U2. The results show
that the bromine contents considerably influence the field 2
Card 1/2 strength where IgR begins to be linearly dependent on 17 and U

66270
The Influence of Impurities on the Strong Field Effect SOV/181-1-11-5/27
in Selenium Rectifiers
With dropping temperature the effect of the strong electric
field increases. This leads to the fact that at a certain
voltage the sign of the temperature coefficient of the back-
ward resistance becomes negative while it had been positive
before. This is clearly illustrated in figures3, 5 and 6. In
samples with smaller idditions the inversion occurs only at
higher voltages and the point of inversion shifts toward lower
temperatures. These experimental data are compared with the
results of the studies by A. V. Ioffe and A. F. Ioffe and
with the theoretical considerations of Gubanov. There are 6
figures and 16 references, 14 of which are Soviet.
IkSSOCIATIONt Institut fiziki i matematiki AN AzSSR (Institute of Physics
and Mathematics of the AS AzSSH)
SUBMITTED: February 16, 1959 LK
CaYA 2/2

68263
sov/U-59-lo-34022
~6 00
nslnlon froms Referativnyy zhurnal. Khindya, 1959, Nr 10, p 28 'USSR)
AUTHORS: Aliyev, G.M., Abdull
- - W44,4'., 11~
TITLE: On the Effect of the Admixture of Chlorine on the Heat Conductivity of
Selenium 'Y%
PERIODICAL! Tr. In-ta fiz. matem. AS AzerbSSR, 1959, Vol 9, pp 20-26 (Azerbaydzhanian
summ~~r~y
ABSTMCT,- The heat conductivity )L of amorphous and crystalline Se and the effect of
a C1 admixture on it his been studied. The increase of a at the transi-
tion from amorphous to ar7stalline Se is connected with the reduction of
the quantity of defects in the lattice which are centers of scattering of
phonons. The admixture of Cl to a certain percentage increases the ef-
ficien'k-1 cross section of phonon scattering, which leads to the reduction
of A ; at a further increase of the Cl concentration due to recombinition
of the admixtures and the formation of neutral molecules, X increases again.
The ratio for admixture-free samples is equal to 2, in the case
of samples with C1 it is, independently from the C1 content, equal to 3
Card V2 It, is assumed that in the crystallization of Se the admixtures are dispiaced/

68263
SOV/81-59-10-34022
On the Effect of the Admixture of Chlorine on the Heat Conductivity of Selenium
and ani concentrated in the intercrystalline interlayer and affect their heat conductivi-
+Y~
V, Ostroborodova ~/
Card 2,12

KULITSY. A.A.;_ABDULLAM. G.B.
Diffusion of some elements in ZnSb and CdSb, Dokl.AN Azerb.SSR 15 no.It
9-11 159. (MIRA 12:3)
(Cadmium antimonide) (Zinc antinonide) (Diffusion)

ALITV, B.D.; ABDUIaAY]ff. G.B.,
Affect of a bismuth admixture on the self-diffusion of selenium.
Dokl. AN Azerb. SSR 15 no.3.0,.897-899 '59. (MIRA 13:3)
l.Institut fixiti AN AzerSSR.
(Bismuth) (Selenium)

ABDULLATEV, G.B.; AKHUMOV, G.A.; ALITEVA, M.Kh.
Rectifying property of PbS. Dokl.AN Azerb.SSR 15 no.11*.999-1003
159. (HIYIA 13:4)
1. Institut fiziki AN AzerSSR.
(Lead aulfide--Ill"ctric properties)

S/1.94/61/000/006/055/077
D201/D302
AUTHORS: Abdullayev, G.B., Nani, R.Kh. and Nasirov, ~'a.N.
TITLE: Investigating the thermal and electric properties
of indigenous cobaltite
PERIODICAL: Referativnyy zhurnal. Avtomatika i radioelektronika,
no. 6, 1961, 2, abstract 6 D8 (Izv. X~' AzcrbSPR,
Ser. fiz.-matem. i tekhn. n, 1960, no. 3, 55-58)
(Azerbaydzhan surmiary)
MT: Temperature dependence was investigated of electric con-
ductance V , thermal coiAuctivity K and of thermal erif 0- of in-
digenous cobaltite, (Y was measured in the temperature rang!
r n- I
20-6500C at room temperature a has the value 12.8 x 10-2 01,
cm-1, With an increase of temperature to 5300C, c- increases 5
times and decreases with further temperature increase. At room
temperature (Z is 33.0 microvolt per degree. The mx%imuin valije
of C4 equal to 90 microvolt per degree corresponds to a tempera-
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S/194/61/000/006/035/077
Investigating the thermal... D201/D302
ture of 4800C. With temperature increasing from room tem crature
to 1000C the K of cobaltite increases. 5 references. Mstrac-
ter's note: Complete translation-7
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Y& ~~ 63
8250
.19 1/. 0 0
S/181/60/002/007/020/042
B006/BO7O
AUTHORS: Akhundov. G. A., Abdullayev, G. B., Guseynov, G. D.
TITLE; Some Properties of Single Crystals of Thallium Selenide
PERIODICAL: Fizika tverdogo tela, *1960, Vol. 2, No. 7, Pp. 1518-1521
TEXT: In the introduction, the authors discuss results already available
in publications on the investigation of thallium selenidepeem.-,l-onductors.
In the present work, the method of preparation of-s-Ingle crystals of
TISe is discussed, and the results of investigation of the elec-~-ical
properties of such crystals are given. For the preparation of single
crystals, 99.969% pure thallium and 99,994% pure selenium were titled
(total weight: 90 gm). TISe was obtained in evacuated (jo-4torr) auartz
ampoules at 5000C in six hours. An X-ray analysis showed that the TlSe
had crystallized in tetragonal form with the parameters a - 8.02 ad
e - 7.00 A. The single crystals were obtained by zonal fusing. Fig, 2
shows the photograph of such a crystal in the form of a bar 15 cin long
and 1-5 cm in diameter. Fig. 1 shows a Laue diagram obtained after 3~~ven
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8250
Some Properties of Single Cr7stals of S/181/60/002/0()1/020/042
Thallium Selenide B006/BO70
zonal fusions with a horizontal zone shift of 10 mm/hour. Identical
crystals were obtained by a zone shift of 6 mm/hour. For horizontal as
well as for vertical zone shift the (001) plane was tho 111ano of grovith.
The electrical conduotivity and the Hall effect were investigated for a
TlSe parallelepipedon of 3 - 4 - 15 mm-5.. Fig. 3 shown the measured
temperature dependence of the electrical conductivity ct for four uamples,
whose resistivitJes at 200C were 1, 3-2, 3.5. and 49 ohm.cm. It is found
that the 0 of low-resistivity samples first falls with lowering o'
temperature, then goes through a maximum, and aeain increases. The larCY
the resistivity. the lower is the temperature of transition from metallic
to the semiconductor state. The minima of the low-resistivity samples lie
at 195, 165. and 1200C (curves 1, 2. 3). The pure sample 4 has no minimum.
The activation energy of this sample Nxas determined to be 0.56 ev. Fig. 4
shows the temperature dependence of the electrical conductivity, the
carrier concentration, and the carrier mobility of sample 5. It appep,ra
that the decrease of a with increase in temperature up to the tempeTature
of transition may be explained as being due to a decrease of the carrier
mobility. Tn this range, the carrier concqntration remains nearly
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82543
Some Properties of Single Crystals of S/181/60/002/007/020/042
Thallium Selenide BOOO'/BO70
constant. Above the transition temperature, a increases because of the
growth of the hole concentration. For the whole range cf temperatures,
the conductivity is of p-type. The thermo-emf was determined to be
.~/400,av/OC. There are 4 figures and 5 references: 3 Soviet, 1 US, &lid
1 German.
ASSOCIATIO!i: Institut fiziki AN AzSSR Baku (Institute of Physics of
the AS Azerbaydzhanskaya SSR, Baku)
SUBMITTED: February 2, 1960 (after revision)
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3/058/6Z/000/008/079/134
A061/A101
AUTHOPO: Blijev, 0. M., Abdulla ev, Qr B.
TITLE: The effect of gallium and iron impurities on the thermal conduc-
tivity, electrical conductivity, and tbermo-emf of germanium
PI-MIODICAL: Referativnyy zhurnal, Fizika, no. 8, 1962, 29, abstract 8E213
("Tr. in-ta fiz. AN AzerbSSR", 1960, V. 10, 5 - 12, Azerb.; sum-
mary in Russ-.Lan)
TEXT: Ge single crystal specimens,containil 4.1.1016, 8.8.1016, and
7.4-1017 cm-3 Ga impurities, and 2.2-1016, 7.5-101 , and 1.1-1017 cm-3 Fe im-
purities have been investigated. It is shown that the thermal conductivity of
Ge drops with an increase of impurity concentration, and that this effect is
stronger with Ga than with Fe impurities. At temperature increase the thermal
conductivity of Go drops with both Ga and Fe impurities. It is also shown that
-the thermal conductivity of Ge changes in a transverse 9,500-oe magnetic field
by no more than 1 - 2.5% in the 20 - 3000C range. Measurements of electrical
conductiVity and thermo-emf up to 60CPC have shown that the temperature depend-
ence of electrical conductivity is exponential in all specimens. The thernio-emf
of n-type specimens in the 20 - 6000C range always remains negative. In p-type
specimens, the positive thermo-emf changes its sign with temperature increase
(at 125 - 1500C).

ABDMJAYNV, G.B., SHAMTAMINSKIT, M.G., XULITAV, A-A,
Studying the elasticity of saturated vapors of the system Se -
To. Dokl.AN Azerb.SSR 16 no.3:219-222 160. (MIRA 13:7)
1. Institut fiziki AN AzerSSR.
(Selenium) (Tellurium)

ABDULLATIT, G.B., BAKIROTO X.Ya., GX R, 1.1h., NASIROV, Ya.l.
Iffect of bromine on the characteristics of selenium photocells,
Dokl*AN Axerb.SSR 16 no#4023-326 160. (XIRL 13:7)
1. Institu fittki AN Aserbaydxbanakoy SSR.
(Bromine) (Photoelectric cello)
I

RAKHTSHOV, A.Te.:-ABDULL&TXYp_,G-B-
Photoelectric properties of semiconductor systems 121 So - Be and
InSe - So In X rare. Dokl.AN Aserb.SSR 16 no.5:437-:ik 160.
(MU=31,3)
1e Institut fisiki AN AzerSSR.
(Semiconductors) (Selenium compounds)

ABDULLAYEVp G.B.; BAKIROVt MeTas; GASYPIOV9 RoB*; NIASIROVI Yaj.
Investigating the formation of a p-n junction in selenium
photocells. Part It FXfect of the material of the top eleczrode.
Izve AN Azerbo SSR, Ser.fiz.-mat. i takh. nauk n0-4:66-72 60.
(MA 14:3)
(photoelectric cells) (Selenium)

S/ J18 ,
194~61'1/000/010/054/082
31
D256/ 301
AUTHORS:
Bakirov. M.Y.I., Gasymov, R.B. and
Nasirov, Ya.N.
TITLE; Selenium photo-ce"Lls with laycrs of CdO, CdS, CdSe
and CdTe
PERIODICAL: Referativnyy zhurnal. Avtomatika i radioelektronika,
no. 10, 1961, 28-29, abstract 10 G196 (Izv. AN
AzerbSSR. Ser. fiz.-matem. i telchn. n., 1960, no. 6,
77-83)
TEXT: Results are presented of investigations of n-type
selenium photo-cells with layers of CdO, CdS, CdSe and CdTo of high
sensitivity in the visible region of the spectrum. The photo-effect
in these cells occurs due to p-n transitions at the borders Se-C(10 I
Se-CdS, Se-CdSc and Se-CdTe. In preparing the photo-cells the mat-
erial of the top electrode was of no significant importance and did
not require special forming. The photo-current of the mentioned
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