JPRS ID: 10409 JAPAN REPORT

Document Type: 
Collection: 
Document Number (FOIA) /ESDN (CREST): 
CIA-RDP82-00850R000500040055-2
Release Decision: 
RIF
Original Classification: 
U
Document Page Count: 
61
Document Creation Date: 
November 1, 2016
Sequence Number: 
55
Case Number: 
Content Type: 
REPORTS
File: 
AttachmentSize
PDF icon CIA-RDP82-00850R000500040055-2.pdf3.79 MB
Body: 
APPROVED FOR RELEASE: 2407/02/09: CIA-RDP82-00850R000500440055-2 FOR OFFICIAL USE ONLY - JPRS L/ 10409 24 March 1982 J~ c~n Re c~rt p p CFOUO 19/82) ' ~ . FBIS FOREIGN BROADI:AST INFORMATION SERVI~E FOR OFFICIAL USE ONLY ~ APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 NOTE JPRS publications contain information primarily from fareign ' newspapers, periodicals and books, but also from news agency transmissions and broadcasts. riaterials from foreign-language - sourc~~ are translated; those from English-language sources are transcribed or reprinted, with the original phrasing and other characteristics retained. Headlines, editorial reports, and material enclosed in brackets are supplied by JPRS. Processing indicatozs such as [Text] or [Excerpt] in the first line of each itea, or following the ~ ~ last line of a brief, indicate how the original information was processed. Where no processing indicator is given, the infor- mation was summarized or extracted. Unfamiliar names rendered phonetically or transliterated are enclosed in parentheses. Words or: names preceded by a ques- - tion mark and enclflsed in parentheses were not clear in the original but have been supplied as appropriate in context. Other unattributed parenthetical notes within the body of an item originare with the source. Times within items are as given by source. The contents of this publication in no way represent the poli- cies, v~ews or at.titudes of the U.S. Government. - COPYRIGHT LAWS AND REGULATIONS GOVERNING OWNERSHIP OF MATERIALS REPRODUCED HEREIN REQUIRE THAT DISSEMINATION OF THIS PUBLICATION BE RESTRICTED FOR OFFICIAL USE ONLY. APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 FOR OFFiCIAL USE O1~iLY JPRS L/10409 . 24 March 1982 i ~ JAPAN REPORT (~OUO 19/82) . CONTENTS POLITICAL AND SOCIOLOGICAL Suzuki Seen as Flagging in Reform (Ken,ji Kitahaxa; THE DAILY YOMIURI, 5 Mar 82) 1 Administrative Reform Plan Hits Snag � (George Murakami; ASAHI EVENING NEWS, 3 Max 82) 2 Unity of Centrist Forces 'Absolute Must' (Ichiyo Hino; THE JAPAN ECONOMIC JOURNAL, 2 Mar 82) 4 , Troubled SoY~yo-JSP Relationship Exemined (Takehijo Takahashi; MAIDTIChZ DAILY :~TEWS, 4 Mar 82) 6 " Trade Friction Ereeds Enmity (Minoru Hira.no; THE DAILY YOMIURI, 21 Feb 82) 8 Bureaucracy Blunts Administrative Reform (Editorial; THE DAILY YOMIURI, 23 Feb 82) g Diet Operation Remains Under LDP-JSP Influence (Takehiko Takahashi; MAINICHI DAILY NEWS, 24 Feb 82) 11 Role of Moderate Opposition Pp::ties Viewed (Editorial; MAINICHI DAILY NEWS, 25 Feb 82) 13 MILITARY LDP To Stiuc~y U.S., USSR Militasy Satellites (SANKEI SHIMBUN, 11 Feb 82) 16 �i:;ENCE AND TECHNOLOGY r Nippon Telegraph and Telephone Activities Reported - � (Various sources; various dates) 17 - a - [III - ASIA - 111 FOUO] FOR aFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 ~ r~ux ur'r't(:lEU. U~~ UNLY ' FY-82 Budget Draft ~ Patent Agreement witr, IBM Expansion of Overseas Activities ~ Stuc~y of Changes, by Kimiaki Sudo, et al. Export of Nationally Owned ~atents to U.S. Under Stuc~y (1VIKKAN KOGYO SHINIDUN, 9 Dec 81) ~+3 Toshiba Electron Beam Lithography ~or LSI Mass Production (Shoichi Saba, et al.; KIKA2 SHINKO, Dec 81) ~+5 - b - FOR OFFICIAL USE niVLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2407/02109: CIA-RDP82-00854R000500040055-2 POLITICAL AND SOCIO~OGICAL _ SUZUKI SEEN AS FLAGGING IN REFORM Tokyo THE DAILY YOMIURI in Enqlish 5 Mar 82 p 4 [Political Beat column by Kenji Kitahara: "Flagging Reform .Ardor"] [Text] "Administrative reRorm is aort oi a re- task oP the council had been, delayed and - volution. But only in the Meij! Restora- that the Llberal-Democratic Party (LDP) tion and in the postwar occupatlon under did not want a single strong report that Allied Forces and Qen Douglas MacArthur :night jqit the government. did ~uch a revolution succeed." Buzuki Tost no time in assenting to Na- This is what former premier Nobuauke kasone's proposal. The two also agreed Kiah1; nicknamed the "monster oi ShoWa that recommendations covering such trou- Era" because of his apparently everlasting ~ blesome iasues as reorganization of min- inSuence fn the political world, recently ietries arid agen~tes and streamlining of toid Yasuhiro Nakasone, director-general Bovernment, local branctles will be canicd oi .the Administrative Management Agen- in part two of the divided report. ~y . Suzuki, who seeks reelection in the LDP The veteran politician ie well aware that _ presidential :election scheduled for Novem- bureaucrats are certain to vehemently op- ber, wauld �like to avoid any situation pose reform of this kind whicH may which may disturb an extraordinary Diet threaten Lo change the administratiye or-. aession, ganization and result in le~:: poWer and With ~ bhe siicuation as it is it is believed authority for themselves. that he woiild not like to have recom- His iemarks may be considered a warn- ~~i=wationa covering ~ifficult ieaues carried ing that administrative refori.. is not in the . report. ~ eaQY and may be a sarcastic jab at Prime But this attitude eeems to atrongly in- Minlster Suzuki who has pledged to stake ~cate that � Suzuki has cooled toward his his political career on thia task, gromise to earry out adminietration re- In reality 8uzuki, who once was ao eager 1orm. about this, eeems to have lost intereat to with such a commitment, Suzuk3 ahould some extent although he still never iails consider adminiatrative reiorm mo~e im- to support administratl~e reform., port~nt than hia reelectinn. But perhapa But the hidden intentions oi the premier ~d not realize, as Kishi cLd, ho. may have been revealed last Monday when dlfficalt the task would be When he made that commitmen~ he met Nakasone. . The prennier really haa been backpedal- The Administrative Reform Council was ing on hia pledge aiince the rtce p~ice scheduled to subtnit its basic report wlth ~crease cs:~ried out last summer. recommendations for drastic reform in We don't reaiiy '>snov~ Nakasone's moti- July and unnounce detailed points, in i~s vation tor dividing the report. However, flnal report in MArch. we do know that the people wili be very But Nakasone suggested to Suzukl thQt happy if 8uzuki is secretly determined to the basic recommendations be divided into oarry out the diPflcult work of administra- part 1 and part 2 saying the compilatlon tive reYorm after he is safely reelected. COPYRIGHT: The Daily Yomiuri 1982 CSO: 4120/190 ' 1 FOR OFFIC[AL USE ONLY . APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 FOR OFFICIAL USE ONLY POLITICAL' AND SOCIOLOGICAL ADMINISTRATIVE REFORM PLAN HITS SNAG Tokyo ASAHI EVENING NEWS in Ehglish 3 Mar 82 p 5 [The Nation column by George Murakami: "Weekly Economic Review"] [ Te xt J Efimiriaang ~ w~aste--ia 'gov~ ~ ~acking, The gatheriBg was ernmea~t has long been a fav~ i heid, ~oacever, because a split orite thema ia big businesa. has develaped batwaen Doko It has beoome partiailarly so ~ and many of the couacil sinre t~e . 19~3 oi~ Crisis, to members--~the council, lilee wh6c~ buaio~s ad~apted by most gQvGramen~l ac#visocX meaus of ~trr maa~ageme~t. bodie~,� oonsists vf ~ b~usiness� The aibnipt ~t hom Iu~ leaders, ooas~rvativt academ- economic growth rates ta low ~ ~~nd senior buaaauerats. has slawed. dowa the riee ia : ~ Maay af t~he oanac~ mem- taa rrvenue, created big budg- ~ess. Paaticularl3' the� bureaw et deficits- an@ other fiscal crats. waat its report o~ re- problams and. has led buainess ~ . commenchtions to be made _ to betiGVe �'g,overnment caa: abis s~~mn~r, to limit itself to � meeat its fi~acial ~pmble~s as, pmposals that have some ~ it did by~ daastic ti~hteada~', chaace . of being put into ef- up. ~ . fect. In t~e Lberal-Democrat- ~ ~ ~ $ ; " ic Party, vyarnings have bcen ~ p~ ~ y~. ~,}xa~ voiced that the recommenda- . .p~~~~Q_, tions must be "practical and ' . y~ a~~~y reasonatble."~ last , yes~r aad Prime Ministdt' Yasuhiro NaYasone~ head Suzu~ declared he was "stak-; of .the Administrative Man- iag (his) p~litical lite on ad- agement Agency and the.Cab- ministradv~ r~for~m" - reduc-~ inet , minister responsibk for ia~ t3~e budget. deficcitt b}r s~sm-~ administrativ~ ' reform, has ~ anag daan tbe bureatx~cy ~ ~ been ~making similar ~ remarks. and wnth.ao incc+easr m~.ces.., ~ Pria?e Minister S~rtuki, whik Toahiw~o Doko~ a respocted he hss conti~ued w express ~nass leader. aamod the~ .~hia resolve to go throu~h. with ~~'s adaninistrative nform, seems - ' to be hedgiag of 3ate. ~ O� ~ uII~~g~ V~hAt Dokq his adhereats tha't the ~uki Gar�ermme~t ~d bi busineu have in mind~ wouki' take administraRive rc- g f~ ~~~Y. B~ ~~y is much more drastic. They rallied salidly to his sup~port would abolish or merge many aad the leaders of the major of tt~e state-fi~aued organiza- bueines4 organizatio~s forn~td don~, tum over their functioas a fivaman cesmnibtee oo baclc to local goverameats;- the re- ~ ~ gular governtnent agencies or pnvate business. T'he state - Last week, big Misiness heid corporation9 - Japanese Na- a n~ty, wkh abo~ut 4G0 busi- tiooxl Railways, Japaa Tobac- ness executivr~ attendin~, to co & Salt Corp. and Nippon tell Doko . he had its Fum Tel dt Te1-woul$ be shif2ed ' 2 . - FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2407/02/09: CIA-RDP82-00850R000500440055-2 in whoIe or part to private make money but iL could pro- savings at most of several tril- enterprise. duoe ma'c revenua if cigarectes lion yen. That would not be.- Radical ' changes~ would be . were simply taxed and the op- much in a~f47-trillion budget made in such big deficit pro- eretiou turned over to private ~d ~y savings would be . ducers as the rice subsidy and enterprise: c}uick!y eaten up by the in- hea~t6 insurance systems. Stiff Here again, thosgh, the op- evitable rises in ou~lays for ' controls~ would be placed on positioa from the corporarion welfaze, defense,. foreign aid, the payrolls aad functions .oE management and~ its labor un- energs~ aad other purposes. local governmeats. i~n, the tobacco farmers (who Another trauble is that Da 'Tiure ie- a great deal oE get fat prita from the cor- ko and the other big business ieatherbetilding,~�wa+xe, corruP- poraEion), the thousands of to- leaders have let administrative tion afld ~,m~ananagement bacco t+etailers (who eajoy a reform get entangled with ir- wbich nads t~i lie cleane~ up closed market) would be for- relevant matters suca a4 a tax but it won't be easy. Take ]NR midable. Nippon Tel 8c Tel is cut and policy in management, as a prime example. Its annual a~n~Ym~u now but its of tfie economy. Waste in gov- deficit is i~l trillion, going on costs ue nsiag and it v~ll be e~ent should of course be ~2 ~L iy ;o, in the ted soon unless it raises eliminated, and Doko shouid its rates. Featherbedding and tra~fer its tCtirtlC itnes W pri- pvsh here for all he caa get. wastc are notorious in NTT. vate owaership f~ was done V~hether the savinga from with the power industry) or a BIg business support for Do- ~~rative refoim ~hould "chird socta~" fir~ (mized, ko, moreover, may nat ~e as be~~d for a tax cut, a4 Do- governmeart-private firm like solid as it appears. 'The people ko and business are demand- Japaa ~?ir Lines) and its local active ia th~ business organi- iag, o~r for makin~ poesa'b1e no lines to local guvecnmeMs zations are � moetly board tax increases is another mat This plan for getting ~id of chairmen and counsellon--in ter and, since rising budget the deficit by getting rid of 3apauuse ~ business~ these are costs will more than eat up JNR would be ~ure to run largely honorary posts. The the savings, an academic ques- ist~., fornudeibk oppositioa younger exxutives who zun tioa from ;Np's n~aaagement and ~e ~~P~~ tend to regard Reduced fiscal spending re- the~n as harmless old codgers labor unions, the Tramport sulting from administratie~e re- Ministry . bureaucrats, loc:al . P~aY~B ~us~~ ~t~n. form may have a deflationary and making Colonel Blimpisli effect on the econom but if businas and political interests, ~~Gad, sir." statemenw. � Y the areas through which the the savings are nsed for. more new Sbinkanaen' lines iwluch What the younger execu- spendiog, say, on public works . are guarantad monrylosers) rives want to see is not the fis- or a tax cut, ~ the net effect are to run and the maa~ poli- cal austerity ~of administrative ~will not be deflationary. ticians invoIved. reform l~ut something qvite ' Moreover, the Governinen0. Not many people can ~ee ~ opposi~e - a tax cub can ge tluough~ with meas~ Suzuki bulling his way through stepp~d - up public speading ur~,y to eliminate waate thia kind of opposition. Tha and other measures to invigor- ~d ~~deYttke apendin~ "practical^ people on the Do- ate the, ecoaomy. Again, busi- policies to stimulate the econ- ko council feel only a faw nessmen in Osa1~a aad the ~ ~y: "Chis s~ould nat be made cosmetic clienges are possible Pra~~~~ are complaininB: a case of one or the other. svch as l~aving private Firms ~eir elders in Tokyo, ob- ~ko s~nd hia backecs (whieh _ taking over functions like ~s ~ id~' include the me~ia) would do' track maintenance sad shut- ~vtting their eyes to the ia- better to concentrate on the creasingly serious slump in the ~ uestion of more economicAi tiag down the mare hopP ~ 9 less locai `lines: cconomY� . and efficieat government stnd ' lapan Tobacco & Salt, as a' ~ a~ P~ctical matter, evea.., stay away from. the tax aad fiseal moaopo3y; is geared to the most drastic measures Do- - economic poGcy, questions. . ko. ma3r� favoz would' re~ult;ia COPYRIGHT: Asahi Evening News 1982 CSO: 47.20/190 3 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 FOR OFFICIAI. USE ONI.Y FOLITICAL AND SOCIOLOGICAL UNITY OF CED?TRIST FORCES 'ABSOLUTE MUS`r' Tokyo TF~ JAPAN ECONOMIC JOURNAL in English 2 Mar 82 p lb [Political Scene column by Ichiyo Hina: "Can Centrist Forces Really Attain Unity7"] [Text ] The just-ended convention of the led by the LDP and the JSP, was established. Democratic Socialist Party (DSP) was But, as many DSP members pointed out in originally designed to adopt the 1982 action the conventioi~, the unification of the four cen- - program and consolidate ~reparedness for trist forces will be as fragile as glass if the coming "political Armageddon in 1983" the Komeito, the most powerful among the when the Lower House election and unified four, drops out of line and takes ihe same local elections are slated. Discussions at the action as the LllP and the JSP. convention, however, revealed nothing but All this was quite instrumental in patching DSP's increasing agonies and irritation over up the rift between the Komeito and other - its incapacity to obtain even a slight prospect three centrist parties for the time being. for unifying middle-of-th~road forces and From now on, the DSP should discuss their winning the helm of power. own party platform further and explain to the The convention reconfirmed the previously people about their stance in favor of the needed poliLy that four centrist parties unification. - the Komeito (Clean Government Party), On the other hand, it was noteworthy that the DSP, the New Liberal Club and the through discussions at the convention, the Socialist Democratic Federation - will DSP's defense and security policy moved cooperate in the future, but many DSP mem- closer to thaf of the LDP, compared with bers have voiced serious doubts over the those of the three other centrist parties. feasibility of unifying tliose four centrist Especially over the F4 bombing gear issue, Forces in the convention. This is because, DSP Senior Adviser Ikko Kasuga and othe* - amid the controversy over the bombing gear leading officials expressed their intentions of F-4 Phantom jet fighters in the Diei, only not to oppose the fitting of bombing gear to _ ICc~meito, among four centrist F4s because, they said, the military en- parties, has participated in vironmer.t surrounding Japan has changed voting on the 1~81 supplemen- from 1968 when the Government dPCided to take off bombing gear from F4s. The - tary budget. Others werP the definition of "threat to other nations, too," ' ruling Liberal Democratic Par- will change as time goes by. This way of ty (DLF) and the Japan Social- thinkii~~ is exactly like that of the Govern- = ist Party (3SP) . Komeito's ment and the LDP and differs from that of action drove a wedge into the ~-~�~eito which has taken the stance of - four� middle-of.-the road-camps, recognizing the defense force only to sscure territorial in- Cencrally speaking, it is an absolute must tegrity a~d is opposed to the for the centrist forces to ut;ite and create a ~ssession of far-ranging _ political environment in which LDP and the ~lpposition are very close. Otherwise, they tighter bombers. c�~~nnot break up "the 1955 political for- Mor.eover, on three non-nu- m:~ti ATT ATT ~R 5 5 0 _ (6) o -5, _ o , 51~1~ 52 53 54 55 51 52 53 54 55 51 52 53 54 55 : 1 F~~=235F3T�~~., A T 7m~1c3-13 E E D~- S& P i~~A~f~~`-91=x 3~~~ Figure 5. Comparison of Management Indicators between NTT and AT&T. (1) NTT is inferior in earnings per employee (sales per employee). (2) Million yen (3) NTT (4) AT&T is also better at using money (gross interest burden as a percentage of sales) . (5) There is a big difference in earnings stability between the two (ratio of net _ profit as a percentage of employed gross capital). (6) Fiscal year [showa] - (7) Note: The exchange rate is 235 yen per 1 dollar. AT7T's figures are quoted from the U.S. Financial Data by Needs--Standard and Poor. kl FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 FOR OFFICIAL USE ONLY 1~~, (Zk~;a~~,: 5:: .iiiRl~3lt,9,=' ``~r (4) r., (~j�.:~o~~~~ ' '~~s~ ~~~..`ti~~ ~i..t'=~~ ~F : % ~ . .}.k ~ . ( 5~~~~,t~~ ' . ~~~iT7:; ~ ~ 1.1 T ~ 12~~,G r-~....-- ~ (9)r~~~~~. i~ � ~ ~ ~ : ~ ' ~ 61 ~ ~ F $E~t~' - I I a ~ ~-9~ik~~f!! J ~i. ~i ~ i~:T~t-3-=~I4litibn�hi~'~, 'RSP[~tro~t-9-~#i~�tt3 TI~~iF[7-/L=i~FA~~Y~'C ~ ~~r�.~-~~u,~~3 (13) Figure 6. NTT's Concept of INS. (1) Information processing center (2) Communications processing center for relay (3) Communicatiuns processing for customers (4) Mobile units (5) Terminal connection device (6) Telephone set (7) Facsimile ' (8) Data terminal (9) Video terminal (10) Telemeter (11) Telecontrol (12) Telex (13) Note: Telemeters read gas and electric meters from a distant place. Telecontrols operate switches by remote control. COPYRIGHT: Nikkei-McGraw-Hill Inc 1981 9896 - CSO: 4106/54 42 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02109: CIA-RDP82-00850R000500040055-2 SCIENCE t1ND TECHNOLOGY :r EXPORT Ot~ NATIONALLY OWNED PATENTS TO U.S. UNDER STUDY Tokyo NIKKEIN KOGYO SH~MBUN in Japanese 9 Dec 81 p 1 ~ [Text ] New Technolog~ Development Association To Seriously Gonsider Technology _ Export; In Cooperation With Mitsubishi Corp, Exports of Japan's Na*_ionally Owned Patents To Resolve Economic Frictions Reportedly, the New Technology Development Association (chairman Yoshimitsu Takeyasu) and Mttsubishi Corporation (president, Yohei Mimura) have rea~ched basic agreement to jointly export Japan's nationally owned patents to tne United States. A memorandum will be officially signed between the two parties by next week at the latest. The purpose of this agreement is to convey the assoc- iation's plans to promote technology transfer to the United States by exporting research results of advanced technologies developed by Japanese universities and national rese~ch agen~cies, fully taking advantage o� Mitsubishi's exten- sive information network in the United States. This is the first attempt by the association, a Japanese Government organization, to consistently engage in full-scale technolo gy export. Although Japan's technology exports to the advanced Western countries have shawn a gradual rise, both the nu~er and the amount of exports are still small compared to those of technology imports. If th3s operation runs smoothly, it is expected that it will not only improve technology trade but also help in ~esolving economic friction between the United States and Jap an. The New Technology Development Association is a corporation having special status imder the Science and Technology Agency. It plays a role as a mediator betw,een universities and national research agencies, on one hand, and enter- prises, on the other, by entrusting the latter with the research results of the former so as to realize commercigtization potential. In the past 20 years since its establishment, the association has handled approximately 350 cases of comu~issioned development and technology mediation which led to commercial- izati~n. However, there is hardly any record of technology transfer to foreign _ countries, except one, to the United States, an option contract terms, con- cerning "technology in glucc~se isomerization by the enzyme methods," from the National Food Research Institute of the Ministry of Agriculture and Forestry. Mitsubishi Corporation, on tne other ?~and, has a technology knowhow team with- in its headquarters Business Planning Room and has been emphasizing the area of technology trade through importing advanced technologies to Japan under the ~+3 FOR UFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2407/02109: CIA-RDP82-00854R000500040055-2 FOR OFF[CIAL USE ONLY domeatic sole agent contract with ths U.S. Bachtel Reaearch Inatitute, the world renawned agency for sales and mediation of technology. Recently, Mit- subishi exported the technology of the Japanese National Railways. With these in the background, the New Technology Development Association has decided to cooperate with Nitsubishi by engaging in both domestic and overseas operation of technology transfer. The specific contents of the cooperation have not been disclosed, but it is known that:: 1) the New Technology Development Association will commission Mitsubishi Corporation to conduct marketing re- search in the United States for potential clients; 2) the association.will se- lect prominent adnanced technologies and request Mitsubishi to introduce reci- pient U.S. enterprises; 3) Mitsubishi will fully take advantage of the branch office networks of its U.S. corporation, Mitsubishi Intern.ational Corporation, and conduct marketing research for potential clients. It will receive some percentage of the patent fee when a contract on technology transfer takes place. However, the association is responsible for making the official con- tract. - The association will select technologies among those which: 1) have foreign patents, 2) have been completed and have some achievements in Japan, and 3) those for which permission from inventors and enterprises has been obtained. _ For the time being, examination are underway regarding "oxidized membrane production technology by ion plating," "weak electrode chemical luminescence detecting technology," "method for manufacturing short metallic fiber," "flowing material for artificial kidney dialysis," and "a method for synthe- - sizing sexual pheromones." Although Japan's balance of technology trade is said to be improving, the num- ber of technology imports is about 2,000 cases in FY-80 and the amount paid is 1.439 billion yen, while the amount received for exports is as low as 378 mil- lion yen. Since Japan aims at being a technology-based nation, it is con- sidered that the promotion of technology exports in the future will also serve to resolve economic frictions with the United States. COPYRIGHT: Nikkan Kogyo Shimbunsha 1981 9711 CSO: 4106/44 1+4 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500044455-2 SCIENCE AND TECHNOLOGY TOSHIBA ELECTRON BEAM LITHOGRAPHY FOR LSI MASS PRODUCTION Tokyo KIKAI SHINKO in Japanese Vol 14 No 12, Dec 81 pp 75-83 [Article by Toshiba Corporation President Shoichi Saba; Kinichi Noga, inspec- tor; Yoshiyuki Takeishi, deputy director, Comprehensive Research Institute; Yushi Matsumoto, chief, IC Research Center, Comprehensive Research Tnstitute; Hachie Koike, chief, Machine Tool Division, Toshiba Machine; Akira Naito, chief, EBM Production, Toshiba Mach3ne] [Text] Preface Electron beam pattern lithography has become essential for developmenti and manufacture of LSI and super LSI replacing the conventional photoetching. The system concerned is an electron beam lithography system which has been put on the production line for the first time in Japan to manufacture master masks and reticles after variaus improvements and developments corresponding to the needs of the actual semiconductor manufacturing plants, based upon the research results obtained byChe Super LSI Technology Research Association. Along with the system, applicational software and the photoresist process necessary for practical use of the system have been developed, which facili- tated the completion of an excellent system that can be operated freely on the production line. The system has already been introduced in several places and is taking an active part in development and production. In view of the fact that the majority of semiconductor manufacturing equipment is imported, it is highly significant that an excellent system has been completed for use in production through domestic technology. The point of the development was concentrated on constructing a well-balanced stable sqstem with the highest technologies currently available at hand. This system is equipped for the first time in the world with a function to produce reticles necessary for wafer steppers, which have spread dramatically in recent years. In addition, an inexpensive machine that is furnished singly with this function has been also completed, and it is being introduced to the production line by popular demand. ~ Development and Background Conventionally, LSI circuit patterns are made from a set of master masks, each _ produced f irst by feeding designed pattern data to a pattern generator (PG), ~+5 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500044455-2 FOR OFFICIAL USE ONLY which generates a reticle 10 times larger than the final size and by photo- graphically reducing and reproducing the image of t'te reticle by a"step-and- repeat" process (Figure 1). In this method, the LSI is highly integrated and the following problems are known to be associated w~.th the reduction in dimen- sions of the patterns. a. Due to the limit of optical resolution, forming of fine patterns is not possible. b. In complex patterns, PG takes too long to generate a reticle to be really practical. c. The power of the step-and-repeat ;amera makes it difficult to form LSI patterns over 10 x lOmm in size. At Toshiba Corporation, a team primarily composed of the members of the General Research Institute started to develop a uCility model and completed a prototype in 1976. Subsequently, the company contracted a project to devel- - op and produce a trial model of the VI~-R1 machine, which adopted a similar lithographic system from the Super LSI Technology Research Association, and completed it in 1977. , In parall.el to this work, Toshiba Machine Co planned to merchandise this system using technology provided by Toshiba, and promoted the development in cooperation with the above described Toshiba team. Starting around this time, serious discussions concerning the practical application of electron beam lithography on the production line had begun to develop and many questions were raised regarding the function, operability, stability, maintainability and costs. Those in charge of the project from both companies were united in an'effort to answer these questions and devoted Chemselves to improvement and develop- ment of a utility model. In 1978, the first model was completed and activated - for actual operation. In parallel, improvement of electron beam resist and its process and development of the mask process such as Cr film etching, all necessary for the practical application of this system, were completed. Eventually, we started to offer the system to users. System Outline This system forms a large family, including the EMB-lOSB for mask and reticle etching, the 130/40 for 6-inch substrate high-speed etching and the 105R B for reticle etching only. However, in the following, the 105B model wi11 be described as representative of the rest. Figure 2 and Figure 3 show the arrangement and etching method of this system. Etching data is read from magnetic tapes and stored in magnetic disks using an EBM format original to this system. This data is pulled out during etch- ing, developed into dot data through a unique circuit shown in Figure 4 and - transmitted to an electron irradiation, system blanking electrode. 46 FOR OFFICIAL USE ONLY ~ APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/49: CIA-RDP82-00850R040500040055-2 .t9i i'-4 2 ~ ~3 - ~~'V_~' 7:~L'-1.!i1aZ i fi ~ OL~ l.'_ ' J (5 L? ~ ~ . x,,-,>,~6~ I~-h!:. ~ - 'i74- 7 v.'t ? v.Z`J ~ ~T.ZD p ~ ~ ~ ~ Y'J i9 ~ 7-~:~9' e t ~ T~~I�Hlf ~io; ! ~ir9N~i k T ~ i ~itt �r~Tt i~rr �+~ts~+~ ,10 ~1 ~12 . 1 ~ ~ . (Note) Location in LSI lithography of electron beam lithography system utilizing ultraviolent ray, x-ray and electron beam (photocathode trans- ference, reduction pro3ection) Figure 1. Location of Electron Beam Lithography System in LSI Lithography Key: (1) pattern data (8) master mask printer (2) pattern generator (9) working mask (3) electron beam lithography system(10) reduct3on projection aligner (4) ion beam lithography system (11) contact aligner (5) reticle (.l2) equi-magnification projection - (6) step and repeat camera aligner (7) master mask (13) new method aligner (note) (14) wafer ~+7 FOR ~FFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/49: CIA-RDP82-00850R040500040055-2 FOR OFFICIAL USE ONLY J ~:~~Rat~ (8) ~ ~ ~;~~,*~(9i) ~ . ~ ~1~ 2~ ~~>77%~%%~:~1 I. '~~;bJ~li%iC ~i~ ~1~~ 1 {a 1 1 T-7'~Tj' Fu;,? � :~t~l~,~ i ~ x 9;'�~ J~.< i 5 ~{i~: ; ; a, CP,U'::}:�= �:.~is~ $'li~;( `i,9 ' ' ` _ t' :..,J ' TOSBAC-7/4Q 7._. V:-.7:~~~e~ - - ,~t~~ : ~',r.j._._7..1.-_ 7 ~ T - 7JL' ;~:.s[~.. . - , ~3~ ;rt (4) ~ , . _ ~ . _ . , �1 / / � ' . . . . t N 'i~~' 4 ~ 7 .r : 7' 'F . EOS~ ~ it .~1. ne�_`,;'r..:. , cRr ~ ~ ~'~r' ~ t ~ 6) tn ~ ~..,o : ~ r~_ ~�~,i1.y~ . . : ~ . . . i (16) . = t~~~~~:4 Figure 2. System Arrangement Key: (9) electron gun (1) magnetic tape (10) electromagn.etic lens (2) magnetic disk (11) deflection electrode (3) console (12) laser interference meter (4) graphic display (13) motor (S) control interface (14) table (6) operation panel (15) auto feeder (7) blanking electrode (16) oscillation proof pedestal _ (8) electron irradiation system (17) power source - - , ~ ~ ~1~ f~ht,4' ~2~ . ' 3 P~-- _ : : T- ~~;ELJi~nnr~ -f- _ ~ - I cv~~sr,~ , _ !'y.Z � ~W~ . . . . ` \ J � r-~.;t3~~i f lfi x u _ T-'yl~ � ~T "!'7~S'~)tll~l !bi!~~~e- F~~ A ____B._ . - u (Xf~1JP9) r'-L'~:a`f~7ffhP~am~6 .--~--25- - --U-~-- _ _..1-~ l:'-L~~"1=)4inW(pm) 1?$ 25Ci 2iG wf~l~ F��r F 3S( 512 512 255 Figure 3. Explanation of Etching Method Ke y : (1) beam (4) beam scanning direction and (2) deflection plate table step traveling direction - (3) traveling direction of table (X axial direction) at a steady speed (Y axial (5) etching mode direction) (6) beam scanning span (7) beam deflection width , (8) number of dots within 4 ~ ~+S FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 (1 T ~3~ . q f~l~c~~a�s CPU 7 ~'-5'~~J ( f G ) s ~ . (5) ~6) -~7) ��r ��r b~ H~ Ft .:-C ~:~'t: ~dJ 'ttP ~6 ~ J '~'J '3 'J I I i i1 i2 i3 ~8~t!:~ L~3 F f) ; Figure 4. Pattern Generation Etching Circuit Key: (1) interface (5) dot pattern memory 1 (2) data memory (6) dot pattern memory 2 (3) function generator (7) dot pattern memory 3 ~ (4) control (8) read out POPS-11 ~ ~ t~ JCL PGIN CHKCEL � LAYOUT DRAW Figure 5. Arrangement of Software - ~+9 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500044455-2 FOR OFFICIAL USE ONLY ~tching is produeed by a so-called continuous traveling raster scan, a com- bination of linear deflection of.the X axial electron beam and Y axial reciprocating motion of the substrate. Data transmission, linear deflection start and the relative position correction of the electron beam and the sub- strate are controlled by the signals of the laser interference meter. The system has three etching modes, as shown in Figure 3. Automatic irradia- tion and deflection system adjustment functions are provided so that the system can speedily accommodate the changes of the etching conditions. An autofeeder stores substrates up to 10 sheets and automatically loads and changes substrates on the table. Data processing and etching are operated and controlled by a minicomputer TOSBAC-7/40. The principal arrangement of the software is shown in Figure 5. POPS-II is adopted for OS because of the merit of its multiprogramming pro- cess. Other software includes: JCL for select.ion of jobs, PGIN for pattern data processing, CHKCE for pattern data change inspection, LAYOUT for lining chips on substrates, and DRAW for operation and control of etching. Various applicational programs are also available besides these. The external appearance and functions-of the software are shown in Photo 1 and Table 1 respectively. r".: F S F ~ S ~ ~ -:N ~ i x ' f .,Z3 ~ � _ 1 ~ ~ . 4Q 'Y Y t~ ,.;j ~2 ~.s~.~ � ' j ~ 'kS F Y~'. ~ n~ ~ ~ i ~ ~ ' ~ p .M~~k.. ..i . ~~C~~ S av Z 3 - G ~ t+t`.:k ~ : - ~ f n ,y ~ ~'~M ' .X b R.: y 3 tZ.[ ~`f ~ l - . ` ~5 3k '~cs"'~~~- r , ~ ~i g 3 ~ ~ R' ~ i . ~ ,a` y,~~ a ~ r . , : ~ ~s~ ; . x ..s~ s . . ~ . . . . -J ~ .;,.....,o..ax.S:...~,......R.~,.M,...3,.,. i.. _ Photo l. Electron Beam Reticle Etching System Table 1. � Main Body EBM-lOSB EBM-130 Height af the main body 2,200mm 2,20Qmm Magazine loading height 940mm 1,OOOmm - I~ loor area of the main body 1, 600mm x 1,450mm 1, 60(1mm x 1, 500mm Gross weight of the main body 3,200kgf 3,500kgf 5~ FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/42/09: CIA-RDP82-00850R000500040055-2 - Table 1 [continued] ~ Vacuum Exhaust System For autofeeder and general rough suction turbo molecular pump For electron gun, body tube etching chamber ion pump ~ Various Functions (Other optio ~ functions are available) , . Pattern capacity (converted in Reticles, approximately 5 million, number of PG f lash) several times more than mask reticles : - Pattern data ~onochromatic inversion function Pattern data window function Pattern data resize function Possible when changing data Pattern data mirror function Pattern data rotation function Possible at every 90�C Pattern data check function Vector mode and dot mode Alignment of chips Randon alignment, standard angle/ round alignment Alignment of different chips Chips of same dimensions, chips of different dimensions (when considered as chips of the same dimensions, there will be no decline of the throughput) - Multipattern function Multireticle pattern/substrate Target mark, key mark insertion DSW-4800 (GCA), NSR-1010 (NIKON) function and others, for various machine models Operation memory output function Scaling function Option 0-10 when changing data, A mode 0.8 - X1.2 and B and C modes X0.7-X1.2 when etching ~ 5~ _ FOR OFFICIAL U~E ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2407/02/09: CIA-RDP82-00850R000500440055-2 FOR OFFICIAL USE ONLY Table 1 [continued ~ Electron Irradiation Sys.tem Electron gun emitter boride lantern Acceleration voltage 20 kV Electron beam diameter 0.2 1.2 um Maximum exposure A/B/C mode 8/8/16 C/cm2 - Image detector reflected electron detector Automatic setting function electron irradiation system, deflection system � Autofeeder Cassette one/substrate/cassette (all s3.zes) Magazine 10 cassettes/magazine Running mode continuous.or.individual shset � Pattern Dimensions and Accuracy by Mode Etchin Minimum Line Width Pattern Pattern Accuracy Scanning g line Increase Accuracy Among Masks Width mode r,,~idth A 1 0.25 ~-~0.12 0.2 128 g 2 0.5 �0.14 0.3 256 ~ 4 1.0 �0.20 0.4 256 � Throughput (minute) Etching Etching range mode 50x50 75x75 100x100 130x130 A 56 11.8 203 334 = B 17 33 56 90 ~ 11 20 32 50 _ � Additional Functions Number Function Outline 1 Chip merge function make one chip data by joining two chip data 2 Mask merge function make one mask data by joining two mask data 3 C A L M A I N transform GDS format data of CALMA to EBM format and register it in disk f i1e 4 B~ L L I N transform BELL format data to EBM format and register it in disk file 5 PGIN (inch system traresform inch system PG data to EBM format and register it in disk file 6 Data check function dump EBM format data in chip file 52 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 Technological 'F~~;~ures The technological f eatures can be summarized in the following eight items. 1. Etching Method }3y the development of the pattern generation etching circuit shown in Figure 4, graphic data expressed by trapezoids can be transformed to dot patterns at a high speed and etched sequentially in a band from one end to the other within the etching range as seen in Figure 3. The practical effect of this invention is immense, as will be described later. 2. Data Processing In this type of system, graphic data is transformed in advance into dot pattern data corresponding to the beam diameter before etching. The follow- ing improvements were added to this process in this system. a. Development of algorithm that dissolves quantize errors associated with'' the data transformation to a practically hax~nless level. b. Compacting of data volume by dividing circuit diagrams.in~o trapezoids and expressing them in instruction word format. By adding this graphic data to the previously described etching circuit, it can be transformed into dot patterns in real time in parallel with etching, which has realized the short- ening of data transformation time, and the restriction and elimination of graphic etching. c. The shortening of data transformation time was realized by developing a merge function where a circuit diagram is systematically divided into blocks, data-transformed and subsequently reunited. 3. Highly Accurate Sample Table _ It is required that accuracy be maintained in a vacuum--for instance, up and down mavement--below~2um from the point of pattern accuracy and stable accuracy relative to traveling several hundred km from the point of continu- ous running. Also, from the point of accuracy of the position of the elec- tron beam, the table is composed of nonmagnet3.c materials and requires correc- tion relative to temperature changes. In order to meet these requirements, numerous investigations and elaborate tests were conducted regarding struc- turES, materials, lubrication and manufacturing methods to complete this table. Incidentally, this table received the Okoshi Memorial Award for 1980 from the Precision Machine Society. 4. High Luminance Long Life Electron Gun For the first time in the world, a single crystal LaBg cathode was built in _ an electron gun and adopCed. With this new idea, beam current density and life was improved more than 10 times compared to the conventional tungsten cathode. The points that contributed to making the new cathode practical 53 FOR OFF[CIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 FOR OFFICIAL USE ONLY were determination of the optimal azimuth of the crystal axis, clarification of crystalline properties and correlation between the quantity of impurities and the characteristics, and establ.ishment of an optimal grid bias value and cathode temperature. 5. Highly Efficient Electron Irradiation System The electron irradiation syst.em was developed in line with the optimal table traveling speed, deflection width and beam current in relation to the req.uired etching speed. In other words, deflection angle was reduced and deflection distortion was minimized by designing a shorter focal length, which increased beam current and focal depth and curtailed disturbance to beam position. 6. Software Besides the basic arrangement shown in Figure 5, the software is complete with programs which correspond to variousfunctions shown in Table 1. Other programs available are for intermediate format input-output, ID letter input, disk and magnetic tape file management and recording of operational conditions. 7. System Expandability The following optional functions are available and can be added to the basic structure: expansion model which processes etching and data transformation in parallel using an additional data transformation specialty calculator system independent of the etching control; wafer direct etching; double speed etching. , 8. Self-Diagnostic Function Etching accuracy automatic diagnostic function, sample table dynamic charac- teristic analytic function and etching circuit diagnostic function are furn- ished to insure proper management and maintenance through prescheduled regu- lar inspection and diagnosis. Fail-safe measures are provided besides these functions for each module by means of failure diagnoses and various interlocks. Practical Features l. The system has made it possible to shorten drastically the turnaround time of. LSI development. Etching speed in PG is about 200 flash/min. 12ecent LSI requires a total flash number of as many as some hundred thou- sands and takes some tens of hours for etching. However, the etching time by this system is less than 30 minutes. 2. It is equipped with an inex~.pnsive lOSR B model special machine for etching reticles necessary for the use of wafer steppers, which have been very popular imports in recent years. Th3s machine is characterized by extremely high cost performance; nothing comparable to.this product exists. - 3. As the beam current density is 10 times greater than other systems, posi- tive resist with stable characteristics such as PMMA can be used. ' S~+ FOR OFFICIA~. USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 4. Because of-a long cathode .life, the system is not st~oped as frequently as others for replacement of tl,ie cathode. S. Monochromatic inversion oL pattern data can be achieved easily, and only one variety of resist and process ara needed on hand. Also, monochromatic inversion does not affect the etching time. 6. Etching time is determined not by the complexity of the patterns but only by the etching mode and etching area. Consequently, it is easier to project a production plan for etching. 7. Many kinds of chip patterns can be etched in one sheet of substrate with- out slowing�~~he etching speed. (Figure 6) 0 8. With one application, a chip is etched up to the maximum 105 x 105mm in a 105 size and to the maximum 130 x 130mm in a 130 size. 9. Multiple reticles can be generated on the same substrate. When LSI of small chip size is fabricated by a wafer stepper, the throughput will increase by several times (Photo 2). 10. When etching, the scaling ra.tio can be changed for every line of chips. 11. A substrate autofeed funct3on is provided to make it possible to etch up to 10 sheets. 12. Because of the automatic setting function provided for the electrion irradiation deflection system, changing of scaling and etching mode and es- tablishing and changing of minute beam diameter and current are simple. 13. Vibration proof and thermostatic equipment incidental to the installa- tion of this system can be of a simple design so long as it does the job. 14. The system runs stably and demonstrates an operating ratio of over 94 percent and a production yield of over 90 percent. 1 2 3 4 5 6 7 8 9 10 G G \ � - n n c ~ s c o s E F Figure 6. Various Chip Patterns S5 - FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 FOR OFF[CIAL USE ONLY r~ Xr~~ j w it~~ �i ~~i ,af~ t 9 ~ ~~l. ' t ~ ' q; - ~ ~ j + 1 _ . . _ . y ~ > > 1; a~. !f; ' ~ i a I ,~14~ i ~r ~ i ~ j Photo 2. Multiple Reticles Status of Industrial Property Rights Among the patents (including utility model) applied pertaining to the system under discussion, 109 cases were opened to the public, 9 cases are being - officially announced as patents, 12 cases were registered and 5 cases were registered as American patents. Registration Number Title of Invention No 888406 (Patent announcement Sho52-14055) Function generator in raster display system No 900143 (Patent a~nouncement Sho52-28529) Graphic display system No 967337 (Patent announcement Sho54-1433) Exposure system No 981699 (Patent announcement Sho54-16192) Exposure accuracy measuring method for electron beam exposure apparatus 56 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2 No 982~51 (Patettt announcement Sho54-13754) Electron beam exposure apparatus No 982552 (Patent announcement Sho54-13755) Electron beam exposure apparatus No 992785 (Patent announcement Sho54-24831) Electron beam exposure apparatus No 992786 (Patent announcement Sho54-24832) Electron beam exposure apparatus - No 994579 (P~.trent announcement Sho54-28270) Electron beam exposure apparatu5 No 1006054 (Patent announcement 5ho54-39710) Electron beam exposure alignment mark forming method _ No 1008771 (Patent announcement Sho54-42588) Electron beam deflection~circuit No 1027640 ( a~ent announcement Sho54-13353) Electron beam exposure apparatus USP-4063103 Electron beam exposure apparatus USP-4145615 Electron beam exposure apparatus USP-4151417 Electron beam exposure apparatus USP-4151421 Method for compressing pattern data and compression processing circuit for radiant beam exposure apparatus USP-4158140 Electron beam exposure apparatus Conclusion Fabrication of circuit diagrams is one of the basics of semiconductor tech- nologv. The system under discussion has improved the fabrication in accuracy, miniaturization, speed and flexibility on the basis that data processing and etching take place in parallel. With these f eatures, it can be said that the system directly contributes to the speedup of the super LSI era and the pro- gress of the super LSI technology. Likewise, it has generally become an established theory that mass production LSI patterns will be generated on wafers by a pro,jection aligner in the 1980's. The mask and reticle production necessary for this process is expected to be fully accommodated by the family of this systsm. In particularly, it is re- garded as an optimal pairing from the aspects of functions and costs to pro- duce reticles by the special reticle etching machine lOSR B model for the reduction projection aligner, which is considered to be in the mainstream of the future. However, it seems necessary to hav~ a new system, including super-high-speed wafer direct etching by electron beam, for non-mass production LSI which is expected to encounter increased need in the future and for LSI in the 1990's. We are determined to continue our technological development efforts to meet these demands. COPYRIGHT: Kikai Shinko Kyokai 1981 8940 ~ CSO: 4106/36 FND ~ 57 FOR OFFICIAL USE ONLY APPROVED FOR RELEASE: 2007/02/09: CIA-RDP82-00850R000500040055-2