JPRS ID: 8660 USSR REPORT ELECTRONICS AND ELECTRICAL ENGINEERING

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F'Uit O~~ICIAL USN: ONLY
JPRS L/8660
14 September 1979
U ~SR Re ort
~
ELECTRONICS AND ELECTRICAL ENGINEERING
(FOUO 2/79~
Fg~$ FOREIGN BROADCAST INFORMATION SERVICE
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~
JPRS L/8660
L9 5ap~ember ~9~9
USSR R~PORT
ELECTRONICS AND ELECTRICAL ENGINEEaING
(FOVO 2/~9~
'1'his aerial publication conCains articlea, abscracts of articles and news
iCems from USSR scientific and Cechnical ~ournals on ~he speci.fic sub~ects
reflected in the table of c~nCen~s.
Photoduplications of foreign-13nguage sources m~ay be obtained from the
PhoCaduplicat3on Service, Library of Congress, Washington, D. C. 205G0.
Requests should provide adequate identification borh as Co the source and
the individual article(s) d~sired.
CONTE~ITS PAGE
11mp].ifiers 1
Antennas 2
Communications, Neeworks; Data Transmission and Processing 13
Components and Circuit Elements Including Waveguides and
Cavity Resonators 20
Conferences 24
Converters, Invereers, Transducers 26
Cryogenics and Superconductivity 28
Electromagnetic Wave Propagation; Ionosphere, Troposphere;
Electrodynamics 29
~lectron and Ion Devices 31
Electron Tubes; Electrovacuum Technology 32
General Production Technology 41
Tnstruments, Measuring Devices And Testers; Methods of Measuring 42
Micro~lectronics 46
F'hotioelectric Effect 50
Pulse Techniques 53
Quantum Flectronics 54
Radars, Radio Navigators Aides, Direction Finding; Gyros 57
Receivers and Transmitters 65
Semiconductors and Dielectrics 69
Theory 81
Publfcations 82
- a- II~I - U5SR - 21E 5&T FOUO~
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Amp1~.f iere
USS~ UnC 621.375,018.756(088.g)
A PULS~ AMI'LI~'I~It
USSEt AUT~lOIt'S C~EtTIFICAT~ N0, 587598 filed 9/0~/76 No 232237~ puUli~hed
11/O1/78 itt ~usei~n
COLIUSOV, N. S. , B~YAllOVSKIY, M. G. an~l MOI20zOV, H. A.
[~rom RE~ERATIVNYY ZHUItNAL RADIOTEKHNIKA No 1, 1579 AbstracC No. 1b119F'~
(T~xt~ A pulse nmplifier is suggested, conCaining outpuC, series-connected
- compound rrnnsi~tors (T) and ~n input T, ehe base of which is connece~d
thrnugh ~ xesistor (R) to the inpue of the device. Zn order to expand thc
fr~quency range, 2 n-p-n-Cyp~ T gnd a p-ndp-Cype T are introduced~ wiCh the
base of the last transistor connected through the R tio the common point of
a resistor divider, conneceed into Che collector circuit of the inpuC T.
The emiet~r is connected tn et~e supply bus, while the collector is connected
to the input of the device Chrough 2 series-conn~cted R, the common point of
which is connected to the base of Che first n--p-n-eype T, connected with com-
mon ~mitCer, ':he collecror of the last transistor is connected to the base
of the first compound T and through a R-- to Che base of the second n-p-n-
type T, the collector 3unction of which is conne~ted in parallel to the base-
emitCer ~uncCion nf the input T. The first T of the second campound T is
connected wiCh a common emitter and made of p-n-p-Cype T, while its base is
connected through a R to ehe common point of a resistor divider connected
into the collector circuit of the inpue T.
USStt UDC 621.383.292.8
A WIbEBAND AMPLIFIER OF WEAY PHOTOCURRENTS
Kiev VE5TNIK KIEVSKOGO UNIVERSIT~TA, FIZIKA in Russian No 19, 197$ pp 50-52
KILIMNIi:, A. A. and ROSHCHINA, G. P.
[From REFERATIVNYY ZHURNAL, EL~KTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1A191)
~TextJ A wideband amplifier of weak photocurrents developed by the authors
is described, which can be used for recording the direct current rrom a
photoelectron multiplier serving as the signal source. The volCage gain
_ can be made equal to l, 10, 102, or 103. This amplifier is characterized
by a small null drift and a low noise level. The small package size makes
it possible to mount the amplifier right next to the photoelectron multi-
plier. Figures 1; references 3.
FOR OFFICIAL USE ONLY
1
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~o~ o~Frczaz us~ ornY
AnCennas
UDC 534+534.231,2
r
bN TH~ Op~ItA'TION 0~ A HOkIZONTAL LINEAR ANTENNA IN A WATER LAY~It
Moscow AKliSTICH~SKAYA ZHUItNAL in Russian No 2, ].979 pp'227-~33
[ArC.icle by V. A. Yel.iseyevin]
('rext] The directi.onal pattiern of ~ linear acoustical antenna
horiznntally situated in a flat homogeneous waCer layer with
comple~ely refleceing boundaries is discussed. The lengeh of
Che antenna ig assumed to be comparable Co or larger than the
- thickness of the layer. The sovnd field in rhe layer crea~ed
by a nQndirectional point aource em3tting a sir~u3oida]. signal
is preseneed in Che form of a sum nf normal waves. The re-
sults nf cnlculation of the directivity characteristic of the
antentta in the water layer are presented.
The propagaCion of sound in sea water ~o ~:ccompanied by reflection from the
bound~ries (the botitom and surface) and by hydroacoustic refraction occa-
sioned by nonuniformiCy of Che water layer. These phenomena inevitably af-
fect the actual directivity paetern of a hydroacoustic antenna located in
Che water layer. The relevant calculations for an~tennas assumed to be of
sm~ll size in comparison wiCh the layer have been carried out for a ray ap-
proximaCion in a number of works, in pArticular reference 1.
Below we discuss the directivity pattern of a horizontal linear acoustical
nneenna in a waCer layer when the length of the antenna is comparable to or
iarger than the thickness of Che water layer. For simplicity we assume that
the layer is homogeneous and plane parallel with completely reflecting bound-
aries (surface completely ~oft, bottom absolutely rigid). The origin of
*.he coordinate system (r,z) fs on the bottom, the 2 axis is directed verti-
cally upwards, Che thickness of the layer is equal to h and the speed of
~:ound in the layer is c.
The sound field in the layer is created by a nondirectional point source lo-
cated at height Zp and emitting a tone signal. A linear antenna with con-
stant sensitivity along its length L is located at height Z. In the calcula-
tions it is assumed that there is no absorption of sound in the water layer.
The signal u at the input of a linear antenna compensated by an angle S* is
~ proportionaL to
+Liz
(l~ u= ~ us(x)oxp(-jlcxsin~)dx,
L/S
where uX(x) is the sound pressure at a section of the antenna ~ocated a dis-
tnnce x from the center, and k is the wave number. The time multiplier exp
{-j~t) is omit~ed here and in subsequent calculaCions.
2
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~ox or~zczaL us~ o~.,Y
We wi11 rre~t the f~.~ld in eho wuCer ].nyer in Che form n� ~ sum of norm~l
w~vey (2, 3~
? ~
ctx (x) I' ~ cos (b,7o) cos (b,7) II;?~ ( ~~rr),
1., i
where R is eha numt~er of Ch~ norcnnl wave, HQ~z~ (~R rX) is the tlunkel funcrion.
of the first kind, zeroth nrder, rX is th~ horizontnl distance from ehe emit-
; ter co eh~ x-th 9~'CC~dTI of ehe gnCenna, and ~Q and b~, nr~ the horizontal and
vertical componenr~ of the wave vector k of Che R-eh normal wave:
~3) b~~)'/:j-G,~~yh'-~ (~`-`~~).~c~/l+)~'',
Tt~e normal waves wiCh ehe loweat numbers for which the value of ~Q is real
prop~~ate through the layer without aCeenuation. The maximum number ~
mn x
for ~ norm~l wave propagating withouC atCenuation is ueCermin~d by Che con-
diCton
� ~ l~"~ ~ 2 ~ l ~
w}~er~ a is the wavelength of the emitted sound in free spnce. A1L normal
waves with wave ttumber3 larger than R~gX are ~CCenuated, and accordingly we
li~nit our discussion ro fields of nonattenuated normal waves, and the infini-
ty symbol at Che upper limiti o� the sum in equation (2) is replaced by the
value k = Q .
mnx
For values ~RrX� l, Che Hunkel function catt be replaced by irs asymptotic
'
t~> ~ ll
tIo ~~~r,) = ~i n-esp C j (s~rx - 4 / J '
For an antenna in free space, the boundary RrP between the near and distant
zones is determined by the following condition [4]:
(6) R�~='~'~}�,
where A is the antenna aperture (in this case A= L). Since each normal
wave can be represented as a sum of two plane waves propagating at an angle
to each other [2J, condition (6) remains r.orrect in the present case, that
of sound propagating in a water layer.
Let the emitter be located in the distant zone of the antenna. Then, if r is
the horizontal distance from the source to the cenCer of Che antenna and a is
the angle of rotation of the antenna in the horizontal plane relative to Che
direction to the source, rx in the exponential exnression of equaCion (5) can
be replaced by r+ x sin a, and in the denominator under the root sign it can
be replaced simply by r.
3
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'~l~e ~~.gn~1 ar tih~ ~npue nf eh~ 1.~.nenr aneenng may now bQ repr~~ented in
Ct~e �nrm
~ �L/3 A
u~l Z Y;.;c a`~ r W~ ~~os (b~~'o) c:oa (b,z) i X
I~Yr ~ 1} ~_t/~ ~ r~ .
X c~p ( y, (r-~x ;~in u) ~-kx sin p]}dx,
Changing rhe order o~ aummneion gnd inCegration and ~.ntegrat3.ng, we obtain
L ~1
u~j ~}~(~'~G e~p C-j n ) ~cos(L,G~)cos(b,~') ----X
/!Y!' ~1 ~r~ Ybt
sin[ (G/'!) sin r,c-l::~ici (3) J
X exp U~~r) j~,;) sin u~k sin ;i) ~
~
The signal inCensiCy aC the input of the linear antenna is given by the
equtttion
uu' = 51~Tr ll. l~...r, D`(a, ~)cos~6~r~,~ ~'L ~ Dr(a, ~)sin(S,r),2} ~
(7)
r 3~L~ ~ ~D~~~a~~)+2~, ~D~(a,~)Da~a,~)cos~~~~�~q)+'~~.
lt�r
i..? r..t a..i+~
where ~
q ~in[ (t.12) (~r sin a-k sin ~
(S) n, (ry. 3) _ - cos (b,Z,) cos (b,7.) ~ ~ r~~2~ ~5~ sin a-ls sin
ti' ~ ~
We define the anCenna response in the layer as the signal intensity at Che
a�?tenna input, normalized for the maximum va.;.!ie, as a function of the angle
of roration of the antenna around its cer.~er a�~1d the angle ~ of compensation:
(9) 13(u, ~)=tru'/m1~{ttu'},
tJe note thaC the parameters in this problem appear in the equation for B
~a, R) for antenna sensitivity in the form of the relative quantities L/~,
'i/a, r/a, Zp/a, Z/a (the mult3plier 8~L2/h%r in equation (7) is abbreviated
tn the normalization.
We continue our discussion using the res,ulCs of calculations made for a spe-
cific case. We consider an antenna with dimension L= 102a and a water layer
with a thickness h= l0a (the size ot the antenna 10 times as great as the
thickness of the water layer). According to condition (4), in this case 20
normal waves can propagate wiChout attenuation. We choose the horizontal
4
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~t
y
, !
2
, 3
. ~ , ~
- - -4 - ~ - D~ i ~4 ~ 6
a , zpna
deg
F'ig. 1. Antenna directiviCy pateern in free space (curve 1) and directivity
Lactor in a water layer for reception of the lOth, 15th and 20th normnl waves
(curves 2, 3, 4); S= p�.
direction between the em:ttCer and the phase center of the antenna so as to
satisfy condition (6), i.e. r=2~104a, and we place both the antenna and the
emitter in the center of t:he layer, i.e. Z/h - Zo/h = 0.5.
We return to equation (8). The firat three multipliers in the right-hand
side, co~(L,'!,o)cos(G,7,)/Y`sr give the dEgree of excitation of the k-th normal
wave propagating in the water layer. The last of the multipliers,
,in( (t,/'_')~(S~ ~in u--/: ,in ~3) ~t./'~) ~5r ~in u-1: sin ;i) ) ,
differs from the expression for the directivity paCtern of the linear antenna
in free space by the replacement of the wave number for k in free space (be-
fore sin a) by its horizontal component for the R-th normal wave.
Thus it is logical to define the value DR(a, S) as a non-normalized direction-
ality factor of the horizontal linear antenna in a water layer during recep-
..tion of the ~-th normal wave and the quantity D~2 (a, S) as the corresponding
energy directionality. Then the antenna response will consist of two parts:
the sum of the energy directivity factors and the sum of the cross products
of the directivity factors of all normal waves propagating in the layer. The
first part corresponds to the energy addition of the normal waves at the
point of reception (energy component of responae) and the second gives the
interference between waves of differ~nt wave numbers (interference con,ponent
of response), Here the phase incursion [nabeg~ between different normal
waves during propagation is allowed for the by the multiplier cos [(~R -~a)r~.
- 5
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~
~t~}~e directivity factor nR(,d,, differs in two basic wnys from Che directivi-
tiy fnCtor oC the ~aame nntienna in free space,
aM za ~s . la ~ s ~
BO
.
60
yp
ZD
D ZO yp 60
=pu~aeB
~ig, 2. Value of aM as n function of Che compensation angle g for normal
waves of wave numbers ~ a 1, 5, 10, 15, 20.
If we define the horizontal component of the wave vector according to formula
~3) ~5 ~ ~ , i�~ :c/?.?,
~ f~~:.~' ry
5t ~:.~.~I.~ ~~~-(l"' 1 ~ 1~--
we see that the corresponding wavelength a~, is greater than the wavelength
This
~ ir free space and increases as the normal wave number increases.
in turn decreases the wave dimensions of the antenna (the ratio L/a~,) an~d, in
thus expands the primary and side lobes of the directivity facxor D~(a,
comparison with the direcCionality in free space. This latter fact is clear-
;.y illustrated in Fig. 1, which presents the directionality patterns of the
lOth, 15th and 20th normal waves, normalized for the maximum value (curves
'l, 3, 4). For comparison, the directionality pattern of the antenna in free _
space is shown on the same graph (curve 1). The compensation angle is S= 0��
IJhile inCroduction of the compensation angle S in free space leads to dis-
placement of the pattern along the a axis by an amount equal to in the
case of the antenna in the water layer the directivity factor D~ is dis-
placed by an angle different from angle a. In fact, it follows from equa-
tion (8) that the angle a M of rotation of the antenna around its center cor-
responding to the maximum directivity factor D~, can be found from the condi-
[ion SIi1~�CH-~~ alil
or
a,,==aresit~[sin ;,/Y 1- (t-`!:) ~/~i (h/}.}'~.
6
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IC !.s cle~r th~t tt~e relat�ianship aM y(3 al.wgys holds, w3Ch Che equ~liCy yign
applying when aM and a ure both zero. 'The difference between angles aM ~nd
~ increases ge angLe ~ and wave number Q are increased. I'ig. 2. ~how~ aM
us ~ funcrion of a for normr~l waves nf numbers R~ 1, 5, 10, 15 nnd 20, Ie
can ~lso be seen fram ~'ig. 2 that starting wieh a c~r~g3n normal wuve number
k and a certuin compensnCion angle s, the va7.ue ~f R exceeds 90�. This meAns
~hat normal wttves with numbers greater than R w~.ll not parCicip~te in deter-
mining antennn response.
As follows from eq~iations (7) through (9), anrenna response Ii(a, S) for a
given compensaCion nngle R:Ls ultimately deC~rm3ned by the form of tihe dt-
rectivity factors D~ (a, S) and Cheir position on Che a axis.
With a zero angle a� compensneion (S = 0), the maxima of the energy direc-
tiviry fpctiors and of the cross products of the directivity waves propAg~t-
ing in the layer wtLl occur when a= 0. As was shown above, as the normnl
w~ve number increases, Che breadth o� the main and side lobes of Che direc-
tiviry factors i.ncrease and the positions of the minima are displaced. Ac-
cordingly, ttie antenna response will have a single main ma:cimum ~a~ a= 0)
and side lobes wtiich ~re broader than in the case of a directivity pattern
in free space, This is clearly visible in Fig. 3, wtiich shows antenna re-
sponse at a compensation angle 0(curve 1) ~nd also rhe result of energy
ndditi~n oF normal waves (curve 2) and the interference compon~nt of response
(curve 3). For comparison, the energy directivity pattern ~f the antenna in
free space (curve 4) is also shown.
, Bl
% Z
!r ~ ;
~ ~ Z
/ 1 ~
/ ~
i~ ; 4
~ ~ ; ~
~~~~-c...~ ` ~ - ~ -
-7. -l. . ~ ~ . J � ?Pa~3
~ ;~~3 deg
:
-1~ ,
~
Fig. 3. Antenna response B(u, g) in a water layer (curve 1.), 3ts energy
(curve 2) and interference (curve 3) components, and the direcrivity pat-
tern of the same antenna in free space (curve 4); S= 0�.
7
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~'or eompensat.ton angles differenr from zero, Che maxima of the directivitiy
fncror corresponding Co different normnl wave numbers will occur at d~ffer-
ent values o� a. This di�ference will incre~.se ~e ~he compensation angle R
increases. The ~ntennn responge at a given compensat3on angle wiLl cons:LsC
of n series of mAximn correspondin~ to rhe normal waves of v~rious numbers.
Ttie Ureadtihs of the maxima will increase as the normal wave number increases,
The ma:tima corresponding ro norm~l waves having the lowest few numUers may
be combined inCo a s~.ngle maximum, while Che maxima correspondin~ to normal
waves of higher numbers will bc c7.early distinguished. This is clearly visi-
ble in ~'i~. 4, which shows rhe antenna response and its energy and interfer-
ence components for a compensation angLe s= 60�. The energy component oE -
response will diff er considerably from the overall response �or the lowest
normal wave numbers and will be cl.oser Co ir for the hfgher numbers. 'The
inrerf.erence component will have large values and play a ma~or role in de-
termining response for the first few normal wav e numbers, while for high
wave numbers it will become insignificant.
B
i ~Z
a, ~ ~ ~ ~
r
i ~
U4 . t I~ t�'"'` ; ~"~`1 \
, i , ? ~ ~
~ ~ ~ ~ i ; ~ I ~ i ~
~
~ ~ , ~ i `
Q :L~ `
6d �.,~~p ....60 a, :pud
� deg
~3
-p y '
rig. 4. Antenna response B(a, S) in water layer (curve 1) and its energy
(curve 2) and interference (curve 3) components; S= 60�.
Fig. 4 shows rhe non-normalized spectrum of normal waves (values of DQ(a, S)
~a= aM) for the case in question in the form of a series of vertical lines.
T}leir distribution along the a axis clearly confirms the points made above.
The multiplier cos[~~,-~a)r] in the inteference component of antenna response
(7) is responsible for that fact that at angles a corresponding to low wave
numbers and for nonzero compensation angles, there will be clearly deline-
ated maxima on the curve for some distances r and clearly delineated minima
for other distances r.
8
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,
As ~he size of ~he antenna increnses wieh the other prop~gaClon conditiions
unch~riged, rhe breadth of rhe main maximum in rhe direcr.ivity f.nctor D~,(a,(3)
will decrease, und rhus tor n~nzero compensation angles wn shnuld expece bet-
ter resolution of the mfiin maxima corresponding Lo ~~arious normttl waves. 1'h~
~lir~c~rivity char~ctertstic of an antentta wiCh a large number of rnaxim~ which
i5 produc~d fit a nonzr.ro compensation angle makes ir more dtf'ficulc tU de-
term~.ne the direction ko th~ emitter and requires ypecial ~:::ocessing of th~
signal ~7t Lhe nnCenna input.
lde now repl~ce rhe continuous linear antenna discussed above by a discr~Ce
equally-spaced linear antenna consisting of N nondi.rectional poinC SOUild de-
tectors of idenCical sensitivity which are acoustically not coupled. The
signal uX at the input of each discrete.antenna compensated by an angle ~
can be representPd in the form
cv-~)~=
u~ u; exp (-jh~id sin 9),
~
. ;~_~.�_~~i:
where ui is Che signal at the input of the i-th sound dezector and d is tl~e
distance between two neighboring detectors. We assume that the number of
elements N in the antenna is odd, Proceeding in a manner analogous to that
described above, we obtain
" 1
~
u~r~ !el'i� c~~ ~~j cos (b,7,~) cos (b,Z) X
k ~d, Y~r
c ~-~,i:
X esp(1`srT) ~ c~p[jdi(5, sin a-lc cin j�
r.,_i
Taking account of the fact that the sum over i in the right side of the above
equation is a geometric progression with denominator exp[~d(~Q sin a- k sin
and carrying out the requisite conversions, we obtain an equation for the re-
sponse of. a linear discrete antenna B~(a. ~3)=Tr..,u~'/mus{tt~, iin'},
where S:~N= f ~D~r'~a.~)-i-2~ ~ DA?~a,~)X
ua?a~' = z
~
1., r
t_, c~~+?
XD:~~('~~ i~)~o~( (~,-5a)r) } .
1 c~n[ (11T/2)d(~, ~in a-lc sin )
and D:~< = cos (l,,?,o) cos (v,7,) `
ti' ~ N sin ['l:d (~t sin a-k sin ]
9
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~OIt O~FICIAL U3E ONGY
i~ th~ non-nerm~lix~d directiviey f~ctor of ~ di~cr~ti~ 1in~~r ~ntenn~ in a
wntcr 1~y~r fnr racepeion uf the ~-th nnrmal wave.
, The r~~pon~e of th~ disctet~ lineer ant~nna wieh a given spacing can diff~r
fr~m the r~~pong~ of a conrinuous linear anC~nna of the e~m~ len~th. How-
~v~r, neec~rding eo rpf~r~nee 4 w~ mgy ~xpect tih~t the enieul~eion resultg
wi11 coinrid~ for a sp~cing d< 0.5~. In fact, ca.lculated reeponses for n
d1~cYeCe 1in~~r nntenn~ with a
spacing d= 0.5~ of the gnme length ag a con-
tinu~ug 1in esr ent~nna and under the same propagation conditione led to identi-
er~l resuLts.
BIBLIOGRAPHY
1, V, V. U~m'yc~nnvich; Ya. S, Knrtik; snd V. V, Spmennv, "The R~suLtg of
~xperimental Studies of VerCical Angular Spectra of a Sound ~ield,"
'Crudy IV V~~soyuznoy ~hkoly-seminara po staticheskoy gidroaku~stike CTrang-
~ctiong of ehe IVth All-Union Schonl-S~miner on Ste~ti~tical Hydroacoustics~.
Novuyibir~k, Nauka, 1973, pp 122-129.
2. I� M. Brekhovskikh. Volny v sloistikh sredakh (Waves in Layered Media~.
Mdscow, Nauka, 1973.
M. BrCkhovskikh, ed. Akustika okeana ~ACOUBC~Cg of the Ocenn~. Moacow,
Nauka, 1974.
4. M. U. S~eryshev. tJaprnvl~nnost' gidroakusticheskikh antenn (Directionali-
ty of f~ydroacoustic Antennasj. Leni*~grad, Sudostroyeniye, 1973.
Institute of Acoustica, USSR Academy of Sciences.
Recctv~d 10 May 1978.
CpPYRIGftT: Izdatel'stvo "~lauka," "Akusticheskiy zhurnal," 1979.
8480 -
CSO: 8144/1602
~
'Che compensation angle is the angle through the directionality diagram of
the antenna is rotated electrically relative to the normal to its length.
10
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USSR t1DC 621,396.43
iNCREAS~NG T11~ E~~~CTtVENE5S QF 1tADI0-RELAY ANTENNAS
KYRGSSR iLIt~~R AKAU. KAgARLAttY, ~ZV. AN KIRG 3SR in Ru~~ian No 4, i978 pp
so-sa
KAMAY~V, tt. R.
CFrom REF~~ATIVNYY 2HURNAL RAUIOTEKtiNtKA No 1, i979 Absrrace No 1A188~
(TQxtj A~rudy ig m~de of preeeing problcros oi improving th~ reliabiitty of
radio relay communicgtion by increa~ing the effectivene~~ of antennga by the
~ge of a pasg~ve reflecting relay unit which ha~ dimen~ion~ equal to the di-
mpnsions of the firse zone of ~resnel, and is lacated in th~ zon~ of form~-
tion vf th~ w~vQ in the immediat~ vicin3ty of the acii,v~ relay s~ation. ~ig-
ureg 4; ref~renceg 3.
USS UDC ~21.396.677
CONVEX SCANNINC ANTENNAS. PRINCIPLES OF TH~ THEORY ANU DBSIGN M~TNODS
VYPUKLYYE SKANIRUYUSHCHIYE ANTENNY. OSNOVY TEORII t hI~TOUY RA5Ctt~TA in
~ugsi~tn, Moecow, Sov. Radio Press 1978 301 pp.
VOSK~~S~NSKIY, D. I., PONOMAItEV, L. I. and ~'ILLiPUV, V. S.
[~rom itEPEttATIVNYY ZNUitNAI. ttADIOTEKHNIKA No 1, 1979 Abstract No iB18KJ
(Text~ Engineering m~thod~ are preaented for calculation of a neW c18~s of
alectricnlly acanning antennag for microWav~ convex antenna arrays. The
poesibility is demonstrated of wide-angle, 1o~-distortion scanning, Wid~-
band operation and asaurance of loa gid~-lob~ lpvels. The resultg are pre-
~ented of calculation of the radiation pattern, nnd the efficiency and lev~l
of gide lobeg; rhe bandWidth properties of coev~x antennas; and structural
sygtemg and some experimental datg. Figures 97; referencea 173.
11
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iJSSR UDC 621,396.677
AN ELECTRONIG SWIT~H ~OR TH~ CONTROL 0~' A MILL~METER BAND PAS3tVE ANTENNA
ARRAY
2-Y VS~S. SIi~02. PO MILt,~METROV, Y SU~MILLIMETRAV. VOLNAM, KHAR'KOV, 197$
'T~~. ~OKL. T.1 [2nd A11-Union Sympoeium on M1113m~~:er and ~ubmiliimeter Wave~,
Kh~r'kov, i97g, Abstracte of Reporte, Voi iJ in Rus~ian, Khar'kov 1978 pp
179-180
3TRUKOV, i. F. and RADCNENKO, V. A.
(From RE~ERATIVNYY ZHURNAL RADIOTEKHNIKA No i, 1979 Absergct No 18171 by C.
L, svbolev)
~Text~ A gchem~tic diagram ia preaented of n high-epeed electronic 9witch
m~d~ of integrated mierocircuits. The method of ~n~erroggtion of the multi-
p1e-element antenna erray, utllizing ehe rhreshoid and modulation propertiea
c~f ~h~ loads an pagaive scattering elemeet8, alloae aimplific~tion of the
deaign of thQ ewitch. The switch accomplishee control of a 4096-element
antenna array in 130 ms, With e time of control of one element of 32 u8,
bnd in 520 ms aith a time of control of one elen?ent of 128 us. Fignre ly
references 2.
12
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Communi.c~eione, N~ework~;
D~t~ Tr~nemia~3on ~nd Proc~ss~ng
UDC 621.396,62;621.58:62~..391.832,2
AMPLITU~E-PHASE CONV~RSIAN
Moacnw AMPLfTUDNO-FAZOVAYA KONVERSiYA (Amplitud~-Pha~e Conv~reion) in Ru~sian
1979 ~ign~d to pr~a~ 26 D~c 78 pp 2, 254-256
(Annotar.ion and t~b1~ of content~ from book by Gorman Mikhayl~vich Krylov
et a1, izdatel'stvo "Svya~,"' 2,600 copies, 256 pagea~
[T~xt] Th~ phenomena, which are combined under th~ name "amplieudE-ph~~e
ronversion" (A~K) ~nd le~d eo the occurrence of amplitud~-dependent ph~se
~hifeg in r~dio ~quipment, are ex~mined. The features of th~ passege of
~ignal~ through eircuite with A~'K ar~ analyz~d~ Layout decision~, which
ar~~ c.nducive eo the les~enin~ of AFK in 13negr ampiifier~, amplifiers wieh
a control amplifier, frequency converters end equipment of the mir:rowave
~ bsnd, ar~ examined,
The boolc i~ intended for scientiets, e~ well as engineering end t~chnicai
per~oninel, who are engaged in the study and development of rece3ving and
amplifying equipment.
Cont~ntg P~g~
Forpward . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
~ Chgpter 1. Amplitude-Phase Conversion and its Manifest~tions in
Radio Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . S
1.1. General Principles. Coals and Tasks of the Book. 5
1.2. A Short Survey of the Literature . . . . . . . . . . . . . . . 6
1.3. Classific~tion of Equipment With Amplitude-Phag~ Converaion . 8
1.4. Method of Analyzing Equipment With Amplitude-Phage
Conve r s ion . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Chapter 2. ~l~m~nte of rhe Information Systema Malysis of a Phase
Radio Engineering 5ystem . . . . . . . . . . . . . . . . . . . . . . . 13
2.1. Dependencp of Losaes of Ueeful Inforroation on the Phage Inata-
bility of the Transmission Circuit . . . . . . . . . . . . . . 13
2.2. Dependence of the Electric State of the Transmission Circuit
on Variations of the Pgrameters of the Information and Con-
[rol Signals . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3. Manifestations of AFK Nith Various Types of Modulation 21
2.4. Ceneral Principlee of Minimizing th~ Equipment Error Caueed
by the Aasemblies of the Phase System. . . . . . . . . . . . 23
2.5. The Principles of the Physic~l Feasibility of a Controi Txane-
mission Circuit . . . . . . . . . . . . . . . . . . . . . . 26
13
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ChBpC~r 3. Analy~3$ of eh~ Pae~~ge ~f an Informaeion Si~n~i ~n D@viceg
Wi.eh ~npli~tud~~Ph~~~ Gonv~r~ion . ~ . . . . . . . . . . . ~ . . . . . . 2g
3~i~ M~thod~ of D~termining th~ `Tranem~ssion ~unction of ~ U~vic~
With Compi2t~ N~n11n~~riey. . ~ ~ . ~ . . ~ . . . ~ . . ~ ~ . . 2~
3.2. D~e~re?in~tinn of ~h~ Approx~natin~ ~unceion of ehe Tr~nemi~~~on
Gh~rec~~r~~tic cf ~ D~vic~ With AFK . . . ~ . . ~ , . . , . . . 3~
3~,. Dee~rmin~tian af eh~ G~mpi~x Goeff ieientg of ~n Approxim~eing
Expon~nti~1 Palynnmi~l . . . ~ . . . . ~ . . . ~ . . . ~ . . . 35
3.4. Nonlin~nr Conv~rgion of ~ ~~se Sign~l. ~ . ~ . ~ . . . ~ . . . 4~
3.5. Ev~iu~tion of th~ Influence of TrBn~mig~ion Ch~raceerietic~ on
Sign~~ Uietortions ~ . . . . . . . . . . . . . . . . . . . . . 43
Ch~pt~r 4. A~npiitud~-Phas~ Conv~r~ion ~n Amplif~er tinitg. 48
4.1. Gen~ra~ Conc~pea Abaufi the C~~~~e of the Oecurrene~ of AFK in
Amplifter Unit~ . . . . . . . . . . . . . . . ~ . . . . ~ . . . 4g
4.2. Pha~~-Amplltude Characteristic~ of a tinear Ampllfier SO
4.3. Pha~~ Propertiee of tvg Amplifiere. . . . ~ . . . . . . . . . . 53
4.4. Phaa~ Properti~~ of Amplifiers With Variable Amplifica~ion. S8
4.5~ f'haee Properti~g of Limiting Ampiifiers . . . . . . . . . . . . 6~
4~5. Le~gening of the ~fEect~ of AFK in Amplt~ier Unit9. 64
Cf~apter 5. Pha~~-Amplitud~ Charect~ristics of Ampl3fiers With tov
Nonl3n~aricy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
5.1. Th~ Conc~pt of ~ Phaee-Amplitude Charact~rigCic. . . . . . . . . 66
5.2. Harmonic &~lan~e Method. Derivarion of Baeic Rat.tos 66
5.3. Pha~~-Ampiitude CheteCE~fiaEiCg of Amplif ier 3tagr~g. 76
5.4. Nays to R~duc~ AI~K ie Aa~plifi~rs . . . . . . . . . . . . . . . 85
Chapter 6. phage ~tiog in Stages Nith itegulated Gain Control 91
6.1. Phase In~tebility of Stages With R~gulated Gain Control. 91
6.2. Consid~retion of th~ Influence of the Inertial and Nonlinear
I~rop~rti~~ of th~ Aceiv~ Elem~nt. . . . . . . . . . . . . . . . 94
6.3. influenc~ of che Mismarching of ih~ Circuits of the interstege
Link and birect Passage on ~he Phase Stability 102
6.4. ~1nye eo Decrease AF'K in Ampli~iers with Itegulated Gain Control . 107
Chapter 7. Pliasp Char~cit~ristics of Amplifiers With e Controlled Load . 111
7.1. A M~thod ~f M~lyzing the Phase Properties of a Stage uith a
Cantrollc d Load . . . . . . . . . . . . . . . . . . . . . . . . 121
7.2. ~hage Rat!o~ in ~h~a 5implest Aperiodic Stage ilith e Controlled
Load 114
7.3. !l 5tgg~ t~ith a Controlled R~sistance Attenuacor. 116
~.4. A ~egoeance Stage With a Controlled Load . . . . . . . . . . . . i19
~.5. tnfluence of the Capacitance of Nonlinear Controlled Elaaents
on the Ph~se Propertieg of th~ Sioipl~et Stages 122
7.6. Phaee Proper~ies of StAg~s i~'ich 'iwo-Circuit Piltera. 123
14
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Chgpe~r 8. Dyngmi~ f'h~~p Ch~ract~ri~tic~ ~f L3miting t+mplifier~. ~.].27
$.1. Trnn~i~Coriz~d LimiEing Amplifi~r With ~ Si.ngl.~ Limieing of
O~c ill~t ion~ ~ . , . . ~ . , ~ , ~ ~ , . ~ , , , , ~ ~ , ~ , , 127
~~2. Limiting Amplif;t~r With ~ Doub1~ I,imi~ing of O~eiLl~eion~ 13,
8.3. Limiting ~npiif3~r Wieh th~ S~qu~nti~l Cdnn~rtidn of Uiode~ . 135
8~4. Curr~cti~n ~f ehe Phg~e-Amplieud~ Ch~r~cr~ristic~ ef Limieer~ 137
Ch~pt~r 9~ An~iy~i~ ~f eh~ Phd~~ Prop~rei~~ of Amplifi~r~ Wirh Con-
~ro11~d ~Q~dbaek. . ~ . . . . . . . ~ . ~ ~ . . . . . ~ . . ~ . ~ ~ . 142
9.1. B~~i~ ttgting for a Gener~l Amplifi.~r With Controlled ~e~db~ck 142
9~2. Conditian~ of th~ Abg~nc~ of AFK. . ~ . , . . ~ . . ~ . , . ~ 146
An~1y~i~ ~f a Single-Stage Amplifi.~r With Contr~ll~d F'eedbnck 14g
9.4. Pha~~ tt~eio~ in ~ MultigC~~e Ampiifi~r. . . , ~ , ~ . . . , , 153
9~5. V~riant~ of Amplifier Device~ With Controll~d Feedbeek~ i56
Ch~pt~r ltl~ llmplieud~-Ph~~~ Convpr~ion in D~vic~~ df ~h~ Micrnwnvc
t3~nd ~ . ~ . . , . . , . . . . . . ~ . . . . . . . . . . . . . . . . iS$
10.1. Generel ~'~~tur~g of AFK in Microwav~ Deviceg. 158
10.2. Oceurreneh df A~'K in Traneistorized MicroElave U~viep~ With
~angtant P~r~meters . . . . ~ . ~ . . . . . . . . . . . . . . ~6t
10.3. The rtechnnism af Ehe Occurr~nc~ of A~'K in par~m~tric b~vic~~. 162
1t1.4. Eimplie~de-Ph~g~ Conversion in Devic~s With a Long Int~:action
of ~lectron~ Witl~ the Elec~romagnetic Wave. . ~ . . , . . . . 164
10.5. Principleg of Reducing the influ~nce of AFK in Mi;:ruwnve
Uevices . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Ch~pt~r 11. AFK in Trengis[orix~d Devic~s of thc Mic.rawave Bnnd. 171
11.1. Phgse-Ampiitud~ Ch~rect~ri~tics of Keg~ner~tive Amplifiers
With Const~nt ~erameters. D~rivation and Analysis of ehe
Bagic itacios . . . . . . . . . . . . . . . . . . . . . . . . . 171
11.2. Regenerative ~1mplifiers in Tunnel and Cumulative-Transit
Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . 1'75
1t.3. rticrowave poWer Limit~r . . . . . . . . . . . . . . . . . . . 182
11.4. Ete~eneretive parsmetric Amplifi~r . . . . . . . . . . . . . . lg4
11.5. bptimized Regenergtivc Perametric Amplifier. . . . . . . . . 186
11.6. Eteg~n~rative i'arumetric Amplifier Bas~d on g Varactor WiCh
~ Pgrtiglly Opening p-n- Junction . . . . . . . . . . . . . . 190
Ch~pter 12. Phxg~-Amplitude Chr?racteristics of Trnnsistorized Fre-
quency Cdnvere~rs . . . . . . . . ~ . . . . . . . . . . . . . . . . . 193
12.1. Ceneral Concepts af the phase Properties of ~requency Con-
verters . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
12.2. Phns~-Amplitucle Characteri:atic of a 5ingle-Transiscor Fre-
quency Converter . . . . . . . . . . . . . . . . . . . . . . . 195
12.3. Frequency Conv~rter M~de With a Uifferential Stage. 200
12.4. ~requency Converter ~titi~ a Variable Transmission Coefficient. 203
12.5. Amplitude-Phns~ Conversion in MicrnWave ~requency Converters. 205
12.6. Amplitude-Pha~e Conversion in Varactor ~requency Multip~.iers. 213
15
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xon o~FZCia~, us~ ort~.Y
Ch~pr~r 13. Meehods ef Le~eening Amplitude-Phase Conv~rsion in
Microwave Uev~.c~s . ~ ~ . ~ . . . . . ~ . . . . ~ . . . ~ . . . . . 215
13~L. C~neral bemand~ on Devicea for Les~ening A~'K. 215
13.2. Redu~tinn of Ph~~~ Incur~ion~ by Mc~n~ of Auromnt~.c Phase
Contro]. . . . , . , ~ . . . . . . . . . . . . . . . . . . . 216
13~3 Reduction of A~'K by Meang of Conerolling the Operatiion of
a Uirece CUrrent In~ttiuMent . ~ . . . ~ ~ . ~ . . ~ . � . � 218
13.4. Le~~~n~ng of A~'K in a Circuie by Meana of Compensatars. 222
13.5~ V~rgctar CompensnCors of NonlinEnrity . . ~ . . . . . . . . 22b
Chapter 14. Methode of Measuring ehe Indicatorg of AFK 233
14.1. Error of Meagur~ment and Precision of Approximat~.on of the
Amplirude and Phase-An?plitude Characteristica. 233
14.~. Structura]. Diagrame of the Me~aurement of the Zndicators of
A~K 235
14.~. Measurement of St:?Cic Amplitude and Phase-Amplitude Char-
c?cCeristics . . , ~ , . . . . . ~ . . . . ~ ~ . . . . . . . 237
14.4. Measurement of the Dynamic Indicators of AFK. 242
Concli~sion . . . . . . . . . . . . . . . . . . . . . . ~ . . . . , 244
Appendix. StrucCural biagrams of Programs for Calculating the
Amplitude-Pl~ase Sp~ctrum. . ~ . . . . . . . . . . . . � � . � � � . 245
Bibliography. . . . . . . . ~ . . . . . . . . . . . . . . . . . . . 247
CUPYRIGt1T: IzdaCel'stvo "Svyaz,"' 1979
7807
CSO: 1870
16 ~
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FOR OFFICIAL USE ONLY
~ USSit UDC 621,39~,81
DETC1tMINATION Or THE POSSIBILITY OF USING DIGITAL FREQUENCY SYNTHESIS
EQU~PMENT ~OR TKE FORMATION OF COMPLEX SZGNALS
RADIOTEKHNZKA~ ItESP. ME2HVED. NAUCH.-TEKHN. SB. in Russian No 47, 1978
pp 27-31
BOTSMAN, P~ D~
~From REFE1tATIVNYY 2HURNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1A94j
, ~Text] The possibility is demonatrated of constructing a universal shaper
for a grid of mul.tiposition signals of programmed structure with coherent _
rules of ~tbdulatinn, based on a digital frequency synChesis system, Refer-
encea 6,
USSR UDC 621.391.82:621.396/397.2
THE ELECTROMAGNETIC SITUATION ON TRANSMISSION LINE PATHS AND STANDARDS FOR
PROTECTION OF RADIO BROADCASTS AND TELEVISION RECEPTION
TR. NII ItAbIO in Russian No 3, 1978 pp 49-54
ABRAI~iSON, YU. M. and KAPITONOV, V. V.
[From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1A354. Summary]
[Text] A study is made of Che causes of development of radio interference
along electric power Cransmission lines operating aC various voltages in
the frequency range from 0.15 Co 1000 MHz. A probabilisCic method is pre-
sented for calculation of the permissible noise level, based on the need
to assure good quality reception of signals at a predetermined level of re-
liability. Results are presented from studies of the intensity of the radio
interference field at measured distances from power transmiasion lines and
the noise attenuation factors. It is shown that the amounC o~ radio inter-
ference fr'om a power transmission line is usually less Chan the standard re-
quired minimum. An esCimate is given of the quality of reception of radio
and TV broadcasts at various distances from power transmission lines, given
the existing field intensities of the power transmission lines.
17
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FOR 0~'FICIAL U3E O1JI~Y
uss~ UnC 621,396,a3
STABILZTY 0~ OPEI2ATION OF LINE-OF-SZGHT RADTO RELAY LINKS IN THE S GHx
BAND
~L~KTItUSVYAZ' in Rusgiatt No 9, 1978 pp 8-17
NAb~NENKO, L. V., SVYATOGOR, V. V. and KRIVOZHBOV, V~ P~
[~'rom R~FERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abatracti No 1A191.
Summary]
(Text] Summary reau~rs are presented �rom studies of Che atatistical. char-
acterietica of signals 3n the S GHz range over radio relay links and experi-
menral 1~inks, performed under the climatic condit3ons of the central. Euro-
pe~n territory of the USSR and ~ne middle Volga region. Experimental and
culculated data are compared. Figures 10; tables 3; references 7.
USS~t UDC 621,396.94
A DEVICE FOR SYNCHRONtZATION OF NOISE-LIKE SIGNALS
USSR AUTHOR'S CERTI~ICATE No 593322 filed 11/OS/76 No 2359849 published
14/03/78 in Russian
GOR, L. A. and GAVRILIN, YE. A.
[From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1A326P]
[Text] The invention is in the area of radio engineering and can be used
in transmission systems utilizing pseudorandom sequences.
18
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USSR UDC 62~,396,669.8
SUPpIt~SSION OF pULSE NOI5E DY ZNTERRUPTION OF THE REC~PTION CftANN~t, AS
APPLICABL~ TO MAR~NE SHOIt7'WAVE ftAblO $ttOAI)CASTS
TEt. TSNIZ ~HOR. FLOTA itt Russian No 23a, i9~a pp io~-ii2
CHCRKASSKIY, YU~ A.
(~rom REFE~ATIVNYY ZHURNAL RADIOTEKHNiKA No 1, 1979 Ab~Cract No 1A359.
Summary]
(Text] A etudy is mad~e of problems of overcoming relatively infrequent
drmospheric radio interfPrence by interrupt3ng the IF r8dio recept3on appn-
r~tus in marine channels used far discreCe shortwave radio communicat3on.
A semiempirical method i.a used to produce an ~pproximate estimate of the
inrerference sCnbility for re~~ption of FM signsls when atmosph~ric rsdio
interference is pres~nt. IC ahowa that awitching off of the channel for ehe
time of application of relatively rare, powerfu]. noi~e burats con decrease
rhe tnean probab~.lity of reception error by approximaraly an order of magn3-
tude. Figure 1; references 6.
USSR UDC 621.396.933
TMPROVING ~THE USE OF FREQUENCIES IN THE AIIt~tOBIL~ (R) S~1tVICE IN THE DECA-
METER 4IAVE BAND
ELEKTROSVYAZ' in Russian No 8, 1978 pp 57-61
BADALOV, A. L. and YEGOROV, YE. I. ,
(From REFERATIVNYY 2HURNAL RADIOTEKI?NIKA No 1, 1979 Abstract No 1A209.
Summary]
[Text~ Decisions of the World Administrative Radio Conference on the Air-
mobile (R) Service are presented. In order to satisfy the need for addi-
tional radiotelephone communication channels, it is suggested that a transi-
tion be made, beginning 1 February 1983, to single-side band radiotelephone
equipment. ~'igures 2; tables 1.
19
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Compon~n~a ~nd C~.rcuit ~1,ementi~
Inc~.uding Waveguides and Cav~ty Resonators
UDC 537-96:621.319.~.
FERROELECTRICS IN MICROWAVE TECHNOLOGY
Moscow SCGNC'fOELEKTRIKI V TEKHNIKE SVCH (Ferroelectrice in Microw~ve Tech-
nology in Itugsien 1979 aigned to prese 18 Dec 78 pp 2, 270-271
(Annotation gnd eabl~ of contents from book by N. N. Antonov,.7. M. Buxin,
0. G. Vendik et a1, Izdatel'stvo "Sovetskoye radio," 4,000 copies 2~1 pp~
[Text~ The book i.s devoted to the problem of develop~ng microwave devices
b~~~d on �~rro~lectric materials, wh~ch make ~.t possible to increase sub-
~tantially the pntenCials of microwave equipment. The que~tions of the
elecerndynam~cg and Cechnology of ferroelectric microwave devicee are ex-
amined. The methoda of analyzing and characterizing Che phage-shi�tiing cir-
c~.;its of a high level of power w3th very fast operation and low-noise para-
metric amplifiers with a wider dynamic range are cited.
The book is intended for specialists involved 3n the development and opera-
tion of microwave equipment; it will be useful to graduate studenta and upper
class students of VUZ's of rhe appropriate specialties.
T~ble~ 1; figuree 190; referenceg 371.
Contents Page -
Foreward . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Frdm the Authors . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Introduction. FerroelecCrics Are a NPw Material ~n Microwave Tech-
nologY~ 0. G. Vendik . . . . . . . . . . . . . . . . . . . . . . . . . 5
Chapter 1. The Physical Traits of Ferroelectric Materials. 0. G.
Vendik, I. V. Ivanov, A. I. Sokolov . . . . . . . . . . . . . . . . . 15
l.l. A~n Elementary Description of Ferroelectric Phenomena (1-3]. . 15
1.2. Ferroelectric Phase Transition [1-7~ . . . . . . . . . . . . . 20
1.3. DielecCric Permeability and the Coefficient af Dielectric
Nonlinearity of Ferroelectrics of the Displaceanent Type as
a~unction of Temperature and the External Field. 24
1.4. Electromechanical Phenomena in Ferroelectric Materials. 31
1.5. Spatial Dispprsion. Oscillations of a Crystal Lattice. 36
1.6. Dielectric Losses in Ferroelectrics Given T>T~. 44
1.7. Diffuse Phase Transition . . . . . . . . . . . . . . . . . . . 54
20
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roR o~~rci~. usE orn.Y
ChnpC~r 2~ Yrop~rr~.e~ nf F~rroel~cer~.c ~ilms~ m~N~ Verbit~kaya,
I, C~ Mironenko, I� S, Soknlova, b. v. Tk~chuk 62
2~ 1. C~rami.c S~l~d S~luC~,one nnd k'arro~lectric ~'1Lm~ Dn~ved on T1~am 62
2,2. l~1.t~r VerinblE Capacitor~ for Hybrid Inti~grcited Ctrcu~.C~. 73
2.3, ~'erroelectr3c F~.lme Obtained by Prec~pitation Frnm Che Ga~
Ph~s~. . . ~ ~ . . ~ . ~ . ~ ~ . . ~ . . ~ ~ ~ . ~ . . . . ~ 77
2.4. mhe Ef~ecCive Die~.~ceric Permeabiliey of a MIM-StrucCur~ WiCh
a ~'erroelectiric ~i~.m ~ , . . . . . . ~ . ~ ~ . ~ . . . . . ~ 85
2.5. On pos~~.bLe Modificaeion~ of ehe Di~~eceric propereies of
rerroelectiric ~'ilme, . . . . ~ . . . . . ~ ~ . . . . . ~ . . 95
ChapCer 3. Lumped ElemenCa Made of ~erroelectr~cs in Microwave T~ch-
nology. N. N. AnConov, V. N~ Keys, C. F'~ Serebrennik~v. 1b1
3.1. F'lnt Nonlinear CapaciCors Witih a F~rroetectric ~ilm. 10~
3.2, Calcul~rion of the Capacitance of a Fla~ Capacitor 106
3.3. Thermal Cond~.rions nf g F1at Capacitor . . ~ . . , . . . . . 112
3.4. Elertrical CharacCeristics of Flat C~pacitors. 117
3,5. ~ligh-~requency and Microwave Devices Made With ~lat Cap~ci-
Cors . . . . . . . . . . . ~ . . . . . . . . . . . . . . . . 121
Ch~pter 4. Microwave Transmission Lines Contgining a Ferroelec~ric
Film. I. G. Mironenko, G. S. Khizha . . . . . . . . . . . . . . . . 134
4.1. Dispersion Properties of Rectangular Waveguides With LE-Type
Waves . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
4.2. Dispersion ProperCies of Rectangular Waveguides With
LM-Waves . . . . . . . . . . . . . . . . . . . . . . . . . . 141
4.3. Dispersion Properties of the 51ot Line on n t~minated nielec-
tric Substrate . . . . . . . . . . . . . . . . . . . . . . . 144
4.4. AtCenuaCion in Waveguide Systems Containing a~erroelectric
~ilm . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
4.5. Phase-5hifters Made With Ferroelectric Films 154
Chapter S. Ferroelectric P~rametric Microwave Amplifiers. I. V.
Ivanov, L. T. Ter-MarCirosyan . . . . . . . . . . . . . . . . . . . . 160
5.1. Features and Pro~pects of Ferroelectric Parametric Microwave
Nnplifiers . . . . . . . . . . . . . . . . . . . . . . . . . 160
5.2. ~'luctuaCion Processes in Ferroelectric Parametric Microwave
Amplif iers . . . . . . . . . . . . . . . . . . . . . . . . . 167
5.3. Low-Noise Parametric Microwave Amplifier Made With a Flat
F'erroelectric Capacitor [50] . . . . . . . . . . . . . . . . 177
5.4. Parametric Amplifiers Made With Nonlinear Dielectric Reso-
nators . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
5.5. Parametric Amplifier With an Active Element Which Is Distri-
buted at the Excitation Frequency and Focused at the 5ignal
Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 195
21
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Chgpe~r 6~ Mea~uremenC ot ehe ParomeCers of Ferroel.ectricg U~ing hiicro-
wave T~'reqLtenCie~, I~ M, nuzin, A. B. Kozyrev . , . . . ~ . . . . . . 199
6~.1. Mea~uremenr of the Coe~�ic~tettCs o� Nonlinearity nf t'erro-
eleCtr~.cs , . . . . . . ~ , . ~ . , . . . . . . . ~ . . . . . L99
6.2~ Meagur~ment of ehe DielecCric Logseg of Ferroelecrric~~ 203
6,3. Me~surem~nC n� ehe Cgpac~tance and lliel.ecrric Lossee of P'].at
CdpOC~.ti0r8 Mad~ Wieh a~errnelectric F~.lm in the Micrnwave
B~nd ~ . , ~ . . . ~ . ~ . . . . . . . . . . . . . . . ~ . . . 209
6.4. Cl~cerodeleas M~~surements of Die~ectric Permeabiliey and
Uielecrric Losse~ of I~'erroelectiric Films in ,the M~.crowave
B~nd. . , , . . . . . ~ . , . , . ~ . . ~ . . . . . , . . . . 212
Appendix 1. Yol.arizat ion of an Ion Crystal . . . . . . . . . . . . ~ 218
Appendix 2. Elements of Thermodynamics . ~ . . ~ . ~ . . . . ~ ~ . . 220
Appendix 3. Tensor ttecording o� Physical Values. . . . . . . . . . . 221
Appendix 4. Osnillaeions of n Cryatal Lattice. . . ~ . . . . . . . . 223
Appendix 5. Averaging According to the Heat FluctuaCions of the Po-
Centi~l Topography of Che InCeraction of the Sublattices
of ~ I'erroelectric CrysCal . . . . . . . . . . . . . . . 225
Appendix 6. The Oscillator Response Function, Whose Frequency
Chr~nges in Time According to a Random Law. 227
Appendix 7. On Che Influence of Surface Conditions on Boundary Con-
ditiona f or the Component of Electrical Induction in a
~ Dieleceric, Which Varies Over Time . . . . . . . . . . . 228
Appendix 8. Use of the Method of Graphs for Analyzing the Coeffi-
cients of Transmission of Reactive Quadripoles of High
Frequency and Micr wave ~requency. . . . . . . . . . . . 230
Appendix 9. Conductivities of ~ and Y in an Equivalent Waveguide
Mode1 of a Slot Line . . . . . . . . . . . . . . . . . . 235
Appendix 10. Equivalent Susceptance of a Capacitive Diaphragm in a
Rectangular Waveguide With a TEl~-Wave . . . . . . . . . 240
Appendix 11. Equivalent Conductivity of an Induction Diffraction
Grat ing . . . . . . . . . . . . . . . . . . . . . . . . . 244
Appendix 12. Distribut ion of Fields in RecCangular Waveguides Con-
taining a Ferroelectric Film . . . . . . . . . . . . . . 247
Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254
COPYRIGHT: Izdatel'stvo "Sovetskoye radio," 1979
7807
' CSO: 1870
22
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~
FOIt O~FICIAL USE ONLY
U5SIt UDC 53~..787,913,087.92
PROP~ItTIES UF TENSORESI5TORS MADE OF ARTIF'ZCZALLY ANISOTROPIC SEMICONDUCTORS
Moscow GA T~KHNICHESKII PROGRESS in Russian No 7, 1977 pp 27-30
ALIY~V, M, I., KASPIROVICH, G. YE., D2HAFAROV, Z. A., AGASIYEV, A. and
VORONOV, V. r.
(I~'rom REF~RATIVNYY ZHURNAL, ELEKTRONIKA Z YEYE PRIMENENYY~ No 1, Jan 79
Abstract No 1B475 by Yu. K. Ibayev]
, [TexC] The strain-measuring characteristics were inveseigated of tensore-
sistors based on the GaSb-GeGa~.3 semiconductor with artificial anisotropy.
The average value of the strain sensitivity coefficient at temperature from
-50 to +12b�C was found to be 40-h5. The Cemperature coefficient of resi~-
tance over the temperature range from -50 to +120�C was found to be 3~10'a/�C.
The devices tested in this study withstood 106 cycles under a per-unit strain
o� 10'3, r~ta3ning their tensoresistive characteristics accurately within 5
percent. Figures 1.
ussR uDC 621.372.852.1(088.8)(47)
A PIEZOELECTRIC ~ILTER OF A COMPLEX PIiASE-KEYED SIGNAL
USSR AUTHOR'S CERTI~ICATE No. 604135 filed 22/03/76 No. 2340081 published
5/04/78 in Russian
KARINSKIY, S. S., KOMAROV, V. G. and RECHITSKIY, V. I.
[From REI~ERATIVNYY ZHURNAL RADIOTEKHNIKA No l, 1979 Abstract No 1B237P]
~TexC] The piezoelectric filter suggested for a complex phase-keyed signal
contains a piezoelectric substrate and transmitting and receiving acoustical
surface wave converters (C) on its surface. In order to increase the number
of leads of the filter, the transmitting C is made of n sections, located in
n parallel acoustical channels and displaced one relative to the other by a
distance corresponding to the length of a discrete signal element. The re-
ceiving C are made in the form of a matr3x of p columns and n rows with a
spacing of the sections in-columns n times greater than the spacing of the
sections of the transmitting C. The n section, forming n rows, are located
in n parallel acoustical channels. All sections of the receiving C are elec-
trically interconnected to allow a change in;polarity of each of the n�p
leads from the sections of the receiving C, where n= 1, 2, 3, etc. and p=
1, 2, 3, etc.
23
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~OR OFFiCIAL U9E ON1.Y
Conf~r~nc~~
USS~ UDG 62L.371.39~012,11
TIiL S~COND ALL-UNYON SYM~03~UM ON MILI.IMETER AND SUDMILLIM~T~R WAVES,
K11Ak' kOV, 13-15 5~~ 1.~'8
II VSESOYUZNYY SIMPOZIUM PO MILLIMETROVYM I SUDMZLLIMETROVYM VALNAM
KlIAR'KOV 13-15 SEN'T 1978 in ttuseien Abetractg of P.~:por~s Volume Khar'kov
197~ 33~ pp
CFrom ItEF~RATiVNYY ZNURNAL RADIOT~KHNIKA No 1, 19~9 Abstract No 1A24K ~y
A~ V. Lazarev]
(Texe~ A~tudy ig m~de of works group~d in the following ChematiC are~~;
elpctrnnic microwev~ ingtrument~ in the millim~tex and ~ubmillimeter wave
b~nds; millimerer ~nd aubmi111meter wave band tranamig~ion 1ine~ and mea-
~uring genernl-purpose microwave equipment; electronic microwave ~ystema in
th~ miLlimeter and submillirt?eter wave bands (including entennae, controli~d
and pnasive devices and ~:lectronic microwave eyetem elemente): the electro-
dynnmicfl of transmisfeion lines and resonant systems, boundary problems of
the theory of diffraction and diffraction radiatian of millimetEr gnd aub-
millimeter wgves.
USSK UDC 621.396.001.83
INTERNA'fIONAL CONSULTATION COMMITTEE O~S RADIO AND ITS ROLF IN THE STUDY 0~
PROBL~MS OF ItAbIO-WAVE PROPAGATION AND 'SHE DEVELOPMENT OF RECO1~QrIENDATIONS
F'OIt pRACTICAL APPLICATION OF THE RESULTS OF STUDIES
1~-AYA V5~S. KONF. PO ItASPROSTR. RADIOVOLN, TOMSK, 1978, CH 1, TEZ. DOKL.
(12th All-Union Conference on Propagation of Radio Waves, Tomsk, 1978, part
1, Abstracts of Reports~ in Ruasian, Moscow 1978 pp 23-25
BADALOV, A. L.
(1~'rom R~F~RATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1A10 by
V. LazarevJ
(Text] The functions of the International Consultatinn Committee for Radio
(ICCR) consists in coordination af the efforts of interested countries on
the international scale in the area of most efficient utilization of the
radia-frequency spectrum and operation of sysCems of radio communications
so as to minimize mutual interference. The ICCR includea 13 research com-
miesions, two of which are involved in problems of Lhe propagation of radio
waves, which relate directly to the problem of efficient utilization of the
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~Ott 0~'~~CiAi, v9~ ~Nt,Y
rndid-~r~qu~ncy ~~~eerue~~ Th~ i~CR h~~ d~v~iep~d and r~~enm~~nd~d m~~h~dg
fnr cf~e~rmin~eian of th~ prop~g~tion ehare~t~ri~tic~ ~f r~dia W~v~~ und~r
v~riaug ~~n~litiane. An ~tlaa o~ EhQ Worid di~tribu~i~n ~nd ~harg~~~ri~ttc~
af etmo~pheric in~erf~ren~~ ha~ b~en ~ompo~~d for a broad rgng~ of Er~qu~n=
ci~~; war1~1 m~p~ af ~h~ index of atm~9ph@ri~ r~fr~~eion ~nd tc~ gradi~nt
~t th~ ~arth's gurfaee, ~s aeii a~ Worid tn~p~ of ~h~ di~~ribu~ion ~E ~rl~i-
c~l fr~qu@nci~~ fer ~he ~Z iey@n c~~ve b~~n compo~~d~
25
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FOR OFPiCIAL U98 ONLY
Conv@re~r~, ~nv@rt@r~, Tr~n~ducQr~
U'~9R UDC 621.~36.6~~
~~LM ~At,L~tJM-Att~~NfD~: NALL ~~CKUPS
Mog~ow PRtriORY ~~~ST~' UPitAVL~N~YA ~n Ru~~~~n No i97~ pp 35-36
PORTNAY, a. YA.
C~rom ttE~'~itAT~VNYY ZHURNAL, E~EKTRON~KA t Y~Y~ PR~M~NENiYE Na 1, Jan ~9
~4b~er~et Na 1~4~0 by A. V. Y@mel'y~novj
(Texe~ Th~ d~~~gn, th~ eechnolo~y gnd the basic char8c~~rie~ic~ of (~aAe-
film ttall pickup8 Ceyp~ KhAG-P) produced ae ~h~ te~ra Divi~ion of the Ali-
Uni~fl 3~ientifi~-R~B~arch tn~~i~ue~ of Ei~ctromechan~cs are reviewed. The
~dv~flt~~@g of ~hQg~ pic.kup~ ov~r elmilar ~ilic~ gickup~ (DKhlt-7, DKhK-14),
germ~nium piekup~ (DKhG-0.5, ~KhB-2) ~nd ~n3b pi~kup~ (Kh6T) ar~ point~d
ou~. The po~~ibiii~y of ugiflg th~ GaA~ pickupe at cryo~enic ~emperaeur~~
ig aig~ noeed.
USSit UDC 62i.382
itAADtATION f'tCKUPS BASBD ON MULTILAYER STRUCTURES CONTROLtABLE BY THE TRANS-
V~R5~ TN~~MA-EMF
L'vov ~IZICHESKAYA ELEKTRONIKA (Phy~icel Electronice~ in Ru~sian 1'~ 16, 1978
pp 63-68
E'I1~1T, i. M. and ASHEULOV, A. A.
r~rom FtEFECtA'CtVNYY 2HURNAI., ELEKTRONIKA i YEYE PRIMENENIYE No 1, Jan 79
Abstr~rt No 1B478~
(Tex~J Con~id~r~d i~ th~ f~agibility of praducing fundamentally naa pickups
for recording th~ energy of nonselective radiation. These pickup~ congti-
tute mu1ti18yer bipoler structures~ one of the layers being made of a materi-
nl with a thermo-~mf anistaopy. The trensverse thermo-emf induced by inci-
dent r~diation controls the bipolar structure. 41aye are proposed to reelize
such pickupg aithin various temperatur~ rangee. Figures 2; refarences 14.
26
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F~JR O~~tCiAi, U86 OPR.Y
US9tt UDC 6~i.3~Z.09~.4.0~a.7
PR03PEC'i'S ~Ott U9tNg ~L~CTRBN ~OI~hRDM~1VT iN TNB MANUFACTUR~ OF ACAU~TB-
fiL~GTRONiC TRAN9DUCER3
L~ningr~d p6LU~'ROV~DN~it6V~t~ U~fifibY~`I'VA ~ '~~1tlrtdptt~O~~AZOVAT~L~ (9~micen-
duceor Devic~e ~nd Th~rmal ~onv~rt~r~) in Russian 1~78 pp 91=~3
VY~OTSK~Y, YU~ N~ and VARLAMOVA, A.
rFrom R~FERAT~VNYY 2HURNAL, FLRKTRONIKA i YEYE PkiMfiNENIYE Ne 1, Jgn 79
Ab~~r~et No 19466 by Yu. K. ibay~v~
~Texej Th~ redi~tive gu~ceptibility of Zn0 fiim~ for piezo~l~ceric trane-
duc~r~ w~~ ~tudi~d. AftQr th~ir epr~y d@pogition, theg~ f~im~ w~r~ found
to b~ A.1-i.a ~,m thick aieh a h~terodieper~~, d~pple~ or fin~ cry~t~illne
~tructur~. 8omb~rdm~nt W~.th feet pieceroe~ of S M~V @nergy yi~ld~d ~erue=
ture gp@cim~ng with or~f~rin~, aa a r~euit of diffugion of va~~neie8 gnd dig=
iocation~ ov~r eh~ volum~ of cond~ns~te, which ghouid appreci~biy improv~
eh~ir ei~ctricai char~ceeristic~. Ag th~ fiim ehickn~~~ incre~~e~f, th~
fiim ~urface bee~me much smoother. Ttii~ su~gQ~t~ the fea~ibili~y of ut~liz-
ing bombgrdment witH fa~t electrong in Che manufacture of pi~zo~l~~~ric
tr8ngducecs beg~d on zin~ oxid~. Figures 1.
27 .
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FOR OFFIC~AL t198 ~NLY
Cryo~@nicg ~nd 9up~cnoad~a~iviey
vss~ une t~z~.~~
A GttY09TAT F1~R Tt1~RM0~TATiC C~t~TROt, A~ ~L~CTRON D~1i~C~S
Me~~ew PEtiBORY I T~KltN~KA ~KSP~R~MBtdTA in Ru~~ian NA 4, 1~78 p 2~0
LfiM~~l1~V, A. ~nd MEDV~fl~SKAYA, E. A.
[~rom REFERl1T~1iNYY ZNURNAt~, ~L~KTRON~KA i Y~C~ PRiM~NENiY~ No 1, J~n 79
Abg~r~~~. No iA2~i8 by Yu. Pov~rovj
CT~x~~ Thi~ nryog~~t i~ ine~nded for t~ermo~~a~~c controi of ~iec~ron de-
vice~ which gener~~e apptQ~iab1Q amoune~ of hege dur~n~ eeeady-e~ate opere-
~ion, in pareicuiar ~r~v~l~.ag-Wgve ~ubQg and cyciotroa-rc~~onance ma9~ra of
th~ miliim~~@r ~nd ~ubt~ii~imetQr rang~. it cons~.ges of tWO ehiQided niero-
~~n ~on~~in~~g coae~unic~~ing ~hrau~h tubeg~ A~1Q~~Wt COR~9~fl@! 18 mounted
on top of ehe upp~r nitrogen con~~in~r ~hrou~h a neak. ThQ entire inside
strueEure of th~ cryo~taC is euep@nded on ~ubee �or ie~ting nitrogen vapor
in and out. Heiium is povre~ ~n~o i~g coneainer through an ov~rfioW ~ub~
Whc~~ out~id~ ~nd t~r~inat~~s into e~ack~t. Nelium vepor is let our ~hrou~h
g tub~ which algo serv~8 ~:~g a eleeve for all the airing. The b~sic param~-
t~r~ af th~ cryost~t ar~r h~i~h~ 950 ~i, ou~~id~ di~met~~ 350 a~o?, volum~
nf the helium contain~r d liter~, voiume of thQ n3trogen coneainer8 10
lit~rg, m~~8 38 ir~. Th~ rat~ of helium evaporaE~oe i~ 86 iiEer~/h during
~eoreg~ end i35 iiters/h durin~ opnration. Tiae of continuoug operetion
after ona fi11 is longer ttan 40 h. Figur@s 1.
28
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I
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FOR AFFICIAL t198 ONLY
Ciectromagne~~c Wave Propagaeion;
ionoepher~, Tropo~pMera= ~1QCtredynamic~
~gs~ UDC 621~371~21)
SdM~ RESULTS OF THEORETiCAL AND EXPERIMENTAL 3TUDIES 0~' TNE CONDIT~ON3 OF
~ROPAGAT~ON OF M~LL~METER RAD~OWAVES OVER THE 3EA
2-Y VSES. S~1~OZ. P~ M~LLIMETROV. ~ SUBM~LLIMETROV~ VOLNAM, KNAR'KOV 1978
TEZ. b~KL~ ~ C2nd aii-Union Symp~gium on Millimater and Submillimeter
W~v~g, Kh~r'kov i978 Ab~~racee of Reporte Vo1 2~ ~n Rueeian, Khar'kov 1978
pp i35-i36
L08Kt~VA, L~ M., MISNAREVA, N. SALIVON, YU. A., BERKHfNA, L. Z.,
LUK'YANCEtUK, A. G~~ STEL'MAKH, V. V., CHERAKA30V, YU. YE., NAbOnENKO, A. I.,
P~P~V, V. PANIN, A. M., K~SIRATI, YU. A. and DUSNENKO, A. V.
C~rom ~~~ERATIVNYY ZNURNAL RADIOTEK~INIKA No 1, 1979 Ab~erect No iB3i3 by
Y~. P, Chi~in)
(T~xt~ The r~guiE~ ~re pr~sented of a theoretical atudy of rh~ pnvelnp~ of
a r~~~ived gignal and an experimental study of fluctu~tiona in nmpiitude
~nd ~n~1~s of errival of millimeter waveband radiowaveg, propagated over
th~ ~urface of th~ sea over a di~Cance of 9.6 km. The transmitter operated
in ~ conE~~nuou~ mode, with radiation and receiving antenna patterns 5� wide.
A~tudy is made ~f the depth of fading of the signal. A method ia developed
for ronstruction of a~tatistical model of the ~ignnl for cnmmunication sys-
tems to be u~ed ov~r a~ter.
USSFt UDC 621.371:(21)
STUbY OF TNE RAUIO BRIGHTNESS COt3TRASTS IN TltE SHORTWAVE PORTION OF THE
Mt~LIMETBR WAVE BAND
2-Y VSES. SIMPOZ. PO MILLIMETROV. I SUBMILL2METROV. VOLNAM, KHAR'KOV, 197$
't~z. DOKL. T. 2(2nd A11-Union Symposium on MillimeCer and Submillimeter
Waves, Khar'kov, 19~$ Abstracts of Reporrs Vol 2j in Rusaian, Khar'kov 1978
pp 173-114
PARSitIkOV, A. A., POPOV, S. A. and R02ANUV, B. A.
(From REFERATIVNYY ZHUItNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1B315 by
Ye. P. Chigin~
[Text] It is reported that the radio *.elescope of the Moscow Higher Tech-
nical School i~aeni Bauman has performed measurements of the radio brightness
contrast of varioue sectors of the terrain at 2.2 mm for variaus atmospheric
29
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FOR OFFZCrAL US~ ONLY
conditiong~ mhe conCraet of a�].~e metal platie meaeuring 1.3 x].~3 m
a g a i n s C various backgrovnds wae me~?sured. The contraee vari~d from 0 K
during pr~cipitation at 1.3 mm/hr gnd fog wi.th v~.sibility 700 m Co 2 0 K
on a cloudl~s~ day wieh low relative hum~.d~.ty~ Figurea 2.
30
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FOR OFFICIAL USE ONLY
~leetron nnd Son U~vicQs
USS~ UDC 621,387.3
TYY~ INS-1 INUICATbR; 'T~CHNICAL I~~QUIREM~NTS
COST A1.1-Union State Seandard 23054-78
[~rom ~~F'~RATIVNYY 2~IURNAL, ~LEKTRONIKA I YEY~ pRZM~N~NIYE No 1, Jan 7g
Abstract Nn 1B497 by M, L. Martinaon]
~Texe~ The bas3c dimensions nnd performance parameeers of this glow-dis-
ch~rge ind~.catnr lamp ore: height 30 mm, diameter 7 mm, �iring voltage 65-
90 V, ~ustaining voltage not higher than 55 V, anode current 0.2 mA, luminosi-
ty 50 cd/m2. 'The mechanicaL lnads it must withst~nd are: vibration within
rhe 1-1000 Elz frequency rgnge with an acceleration of 10 g, rr.petitive im-
pect wirh an gcceleration of 15 g, single impact wiCh an acceleraCion of
150 g. Minimum operating time 5000 h.
.y
31
FOR OFFICIAL U~SE ONLY
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FOR OFF~CIAL USE ONLY
E1ecCron Tubas; E].ectirovncuum Techno~ogy
U55tt tinC 62].~3g5~6
EL~CTEtON GUNS I~OIt I'RODUCING THIN-ItI13BON EL~CTItON 13~AMS WITH NIGH CURtt~NT
DENSI'I'Y IN MILLIM~TCtt-WAV~ nACKWAttD-WAVE TUB~S AND DZFFRACTZON-RADIA'1'ION
CENCRATORS
Khar'kov VTOItOY VS~SOYU~NYY SII~OZI~iUM PO MIT.LLMETROVYM I SUnMILLIMETROVYM
VOLNAM ~Second A11.-Un~.on Symposium on 44ill~.mmeter and Submillimeter Waves~
in Itugsian Vol 1, 1978 pp 8~-82
ANTONOV, V~. A., BOGACH, A~ S., LOPA'fIN, I~ V~ and TISHCH~NKO, A~ S.
[rrom RE~~RATIVNYY ZHURNAL, EL~KTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Absrract No 1A75 by V~ N. Makarov]
~'rext] Examined are the features characterizing formation of thin-ribbon
(0.0~.-0.1 mm Chick) eleceron beams wiCh a 50-150 A/cm2 currenC density, 3n
electron-opeicnl syatems, and conatraining ehem by means o� a magnetic
�ield. Besti resules are obtained with an impregnated aluminate cathode
withouti a focusing electrode near ~.t. The design of an electron gun iB
- described with which the output power of a backward-wave tube or a diffrac-
tion-r~diation generator can be increased by a factor of 2 to 20.
USSR UDC 621.385.6
EL~CTRONIC TUNING 0~' THE FREQU~NCY IN A LENS MAGNETRON TETRODE
Khar'kov VTOROY VSESOYUZNYY SIMPOZIUM PO MILLIMETROVYM I SUBMILLIMETROVYM
JOLNArt [5econd All-Union S}nnposium on Millimeter and Submillimeter Waves~
in Russian Vol 1, :1978 p 4
I,CVIN, G. YA., LOCVINENKO, A. I. and TEREKHIN, S. N.
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1A87]
[Text] During the nineteen seventies at the Institute of Radioelectronica
(Academy o� Sciences of the Ukrainian SSR) there was proposed a principle
of controlling Che parameCers of an electron cloud in surface-wave magne-
trons by means of electrostatic lenses. On the basis of this principle
lens magneCron tetrodes were subsequently constructed for operation within
the 8-mm wavelength band. The problems are examiued of electronically tun-
ing the frequency and changing the high-frequency power of oscillations by
variation of ehe control voltage across the lenses. The problems of opti-
mizing the operation of a lens magnetron tetrode are considered, namely of
32
FOR OFFICIAL USE ONLY
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~Ok OI~'C~CtAL USC C~NLY
mtnimtzinq rhe dr.op of high-frnquency pc~war ove~ eha eunin~ r~ng~, Thr
Eea~lbility of ~LaGeronic frequ~ncy runing w3Ghouti ~ub~~~nti~1 powet� v~r.i~-
ei~n is d~mon~C~gC~d~ Th~ amp~ieude-fr~qu~ney chgract~ri~eir~ are pr~~ene~d
of an 8-mm low-voleag~ lens magnerron Cetrode op~r~e~ng aC th~ 5-W pow~r
~~ve1 wieh an Effic~.ency rang~.ng from ~pprox~.maeely 5 ea 10 pe~cent ~nd wi~h
the Er~qUency electronical~.y tun~ble through approx~maCaLy L00 Mftz ~C a 1~~~
rhnn 9 per~ent power drop.
USSR UDC 621.385.6
SIIOItT-htILLIMET~Et-WAV~ Mtb SUBMILLIME'~ER-WAV~ ORnT~ON ~REQUENCY CONV~RTE~S
Khur'kov VTOROY VS~SOYUZNYY SIMpOZIYUM PO MILLIMETROVYM I SU~MILLIMET~tdVYM
VOLNAM [S~cond All-Union Symposium on Millimet~r and Submillim~t~r Wave~J
in [tu~ei~n Vnl 1, 1978 pp 29-30
~USIN, i'. S., KOSTROrtIN, V. P., KUSHCH, V. S., SIN~NKO, L. A. nnd mCtt~K~tOV,
A. I.
~I'rom R~F~RATIVNYY 2HURNAL, ELEKTRONIKA I Y~Y~ PttIMENENIY~ No 1, Jan
Abstract No 1A125 by E, M. GutCSayt~
(Text] Several mock-up models of oroeron frequency converters were studied,
with the operating current approximately 60 mA ~t an anode volCage of 3.S kV
in g magneC3c f ield 2.5 k0e serong. With the fund~ment~l frequency equal ta
10 C}iz, these models could deliver an output power of the order of 10 mW at
rhe 6-9th harmonics, and frequency multipLiers could deliver 1 mW to 50 uW
at output frequencies from 140 to 450 GHz, respectively. The transconductance
of electronic frequency tuning in an orotron was found to be 30-70 kHz/V and
the transcbnductance of electronic biasing was found to be 300-400 kHz/A.
The feasibility of synchronizing an orotron by means of a quartz oscillator
witli a high phase stabiliCy has been demonstrated. MeasuremenCs of the
spectrum o'f a stabilized orotron revealed spectral lines not wider than 7~Iz
at the fundamental frequency of 10 GHz as well as at the 6-9th harmonics.
References 1.
33
FOR O~F'ICIe~L USE ONLY
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APPROVED FOR RELEASE: 2007/02/48: CIA-RDP82-44850R000100094419-1
~OR d~FICIAL USG ONLY
Ug~~ UDC 621,385,6
'I'HhC1ItY qt~' A EtC~I~i:C'fING UIFt~'t2ACTIdN-RADIATION GENERATOR
Kltar'kov VTOROY VS~SOYUZNYY SIMpOZIYUM Pd MItLIMETi~OVYM I SUBMILLIM~TROVYM
vo~,Nnr~ CS~~~~,a n~i-Union Sympo~ium on rtillimeeer and SuUmillimetQr Waves]
;in Ru~sian Vdl 1, 1979 p 66
BALAKt,ZTSKIY, I~ M~, VOROD'YCV, G~ S., flOSPELOV, L~ A. ~nd TSVYK, A. I.
[~tiort? RE~~ttATIVNYY 2KURNAL, ELEKTRONIKA I Y~Y~ PRIMENENIYE No Jan 79
Ab~tract No 1A124~
('C~xt] 'The ~ti~ady-gtate parformanc~ of a diffract3on-rad3ation genarator
wiet~ refleceion of electrons is analyzed on the basis of a consistent non-
linaar th~eory~ AnalyticaL expre~sione are deriv~d for calculating the gen-
~r~~~d power, Che sCarrin~ current and the ~ie~e~on~~eiiy tunable �requency
r~ng~~ Th~ reguitg ~re analyzed qualitarive].y. It is found th~r thE mu].ti-
plieity of interACtiion between electrons and the high-frequency field in ehe
r~sonntor c~vity of such a diffracCion-radiation generator makea possible
an ~ppreci.able lowering of the sCarC~.ng current, as Weii as tuning the
~~nerated fr~quency by variation o� the reflector voltage. The theoretical
results are compared wiCh experimental inveariggtions of the baeic char~c-
teristics of a reflector-type diffraction-radiation generator.
US5R UDC 621.385.6
'TN~OItCTICAt. STUDY OF TEtANSIEN'r AND STEADY-STATE PHENOMENA IN DIFFRACTION-
RADIATION G~N~RATORS
Kher'kov VTOkOY V~50YUZNYY SIMPOZIYUM PO MILLIMETROVYM I SUI3MILLIMETROVYM
VOLNl1~S [Second All-Union Symposium on Millimeter and Submillimeter Waves]
in Russian Vo1 1, 1978 pp 60-61
LUKIN, K. A. and 5H~ST~PALOV, V. P.
(~rom It~FERA'fIVNYY ZHURNAL, ELEKTRONIKA I YEYB PRIMENENIYE No 1, Jan 79
Abstrnct No 1A129 by E. M. Guttsayt]
('Text] The excitation of a diffraction-radiation generator (GDI) by a rec-
tangular voltage.pulse is analyzed by the author's own nonlincar transient
_ theory. F~ctors are considered which determine the rise time and the fall
time of an emission pulse generated by the GDI. The feasibility of control-
ling the slopes and the shapes of both leading and trailing pulse edges is
34
FOR OFFICIe~L USE ONI.Y
APPROVED FOR RELEASE: 2007/02/08: CIA-RDP82-00850R000100090019-1

APPROVED FOR RELEASE: 2007/02/48: CIA-RDP82-44850R000100094419-1
~'01~ U~~~C1'AG U5L nNI,Y
~l~o ~xamin~d, 'Th~ nna~.yslt~ oE seeady-~eatie dpcrat~.ng mod~~ of ~uch ~ dif-
fr.~ceion-rndintion gpnergtor includes cutoft of salf-excited oscill.tttlong
~nd ~mt~~idn hygeeresis~ The dependenc~ nf ehe eff~.ciency on ehe dev~.gtiion
o� el~ceron velociey from tihe oynchronous velocity ~.s shocm for eh~ case nf
a gener~ror curr~nti 50 percent h~.gher ehan ehe starCing current, mhe exis-
tennn of ~n npeimum s~ze of tihe field spoe, corresponding to maximum genera-
ror ef~'ic:iency, and the poesib313ty of corr~cely accounting for Che effece
of sp~ce ch~rge are glso indicated. References 3,
USSFt UDC 621.385.6
CXpEItIrt~NTAL STUbY OI' NOISC 0~' A THIN-RZB130N CLECTRON B~AM TRANSMITT~D A130V~
A ['CRI ObI C S'CKtlCTUR~
Khar'kov VTOROY VS~:SOYUZNYY SIMPOZYYUM PO MILLIM~:TROVYM x 5UI3MILLIM~'rROVYM
VOLNAM [Second A11-Union Symposium on MillimeCer and Submillimerer W~ves~
in ~ussian Vol 1, 1978 pp 77-78
MAYS'TRENKO, YU. V.
[From R~FERIITIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1A136 by E. M. Cuttsayt]
['fext] An experimental study was made of noise due to ribbon-thin electron
beams 0.2x5 mm2 in cross sect ion transmitted above a 40 mm long retarding
comb sCructure. An electron beam was produced by a diode gun w3th a L-
cathode and focused by an electromagnet with a magnetic induction up to 0.1
T, the operating current varied from 80 to 150 mA at accelerating voltages
from 2 to 3 kV. The noise within the 1-500 kHz frequency range, due to
such an electron beam, was measured in the cathode and collector circuir.
The results of these measurements have revealed that at frequencies below
20 kHz rhe beam �lucCuations are inversely proportional to the frequency
and can be characterized as flicker, while at frequencies above 20 kHz tt~ey
are ].inear and can be characterized as shot-like. It is also noCed that
the intensity of noise in the collector circuit, due to such electron beams,
increases with slower current aCtenuation, with higher residual gas pressure
(above 3�10-5 mm Hg) and with lower magnetic induction (especially below
0.3-0.4 T). The correlation of: noise appearing in the collector and cathode
circuit due to electron beams is also analyzed. References 2.
35
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APPROVED FOR RELEASE: 2007/02/48: CIA-RDP82-44850R000100094419-1
F~'Olt 0~'~'~C~AL US~ ONLY ~
1iS51t UDC 621.385,0~9(083.74)
05CILLATOR TUB~S RATED ABOVE 25 W WITH pOWEIt DISSIPATION AT THE PLAT~
GOST [All-Un~.on Seate Standard] 21106.3-76
[~'rom R~F'~itATrVNYY ZHURNAL, EL~KTRONTKA Z YEY~ PRIMENENTYE No 1, J~n 79
AtiStirElCt NO 1A72 S by Zh. M. Nadel'~
[TexC] This USSIt Srandard pertigin3ng Co oscillator tubea rated above 25 W
with power dissipaC~.on ~t the plate and intended for operation ae frequen-
c:tes up to 1000 MtIz establishes a method of testing ehem for electrical
etrengC;a. under quiescent cnndiCions. It also covera general requiremenCS,
equipmene and prep~ration for testing, as we1~ as the Cest procedure.
US5R UDC 621,385.032
A CONTAINER ~'OR LONG-TERM STO1tAGE OF A VACUUM DEVICE
US5R Patent Class B 65 D 85/42 No 60L197, disclosed 2 Aug 76 (No 2391776)
published 11 May 78
COLANT, M. B. and RULEVA, N. N.
(~'rom REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1A147 by Y e. N. Gordyeyev]
[Text] A container is proposed for storage of vacuum devices, which con-
sists of an evacuated glass flask and a case holding such a device inside.
Th:ts flask has a widening inside which is located a spiral spr3ng pressing
witl~ 3ts outermost eurn against the glass and fastened with its innermost
turn to the case. Such a widening of Che glass flask wiCh a spiral spring
~ inside prevents axial movement of the case with the device and thus ensures
adequate axial as well as radial damping. The container provides long-term
protection for vacuum devices against inleakage and reliable shock absorp-
tion in transport.
36
FOR OFFICItiL USE UNLY
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FOn n1~T~'7:C1AL US~ ONLY
uss?t vnc 621..38s, 6a
A[t[;LA'1'IVIS'PIC DIACNETItON WZTId MICROS~COND VOLTACE PULSES
hloscow PIS'MAY V ZHUItNAL TEKHNICHESKOY I~'IZIKI in Russian No ].4, 1978 pp
823-826 -
nrDCNKO, A. N., SULAKSHIN, A. S., 1~OM~NKO, G. P., T5VETKOV, V. I,, SHT~YN,
YU. G. and YUSHKOV, YU, G.
[From R~FEItATIVNYY ZHURNAL, ELEKT1tONIKA I YEyE pRIMENENTYE No 1, Jan 79
Abstrace No 1A81 by E, M. GuCCsayt)
(TexC~ A relaCivistic pulse magnetron with a cold cathode was studied. The
device dclivered a power of 0.8 GW at the a= 12.5 cm wavelength itt pulses
of approximaCely 0.3 us duration, with an anode volCage of 450 kV and a mag-
nee3c induction of 0.4 T. Its maximum efficiency was 30 percent, The spec-
trum of oscillation modes is shown obCained without any or with only one axinl
variation of the field. The operating mode was Found to be the II-mode,
characterized by the shortest wavelength in the ~bsence of r~ny axial �ield
var:iation. The separation between oscillation modes is shown to be 6 per-
cent. Curves have been plotted depicting the dependence of the anode voltage
and of the anode current on Che magnetic induction. As the latter increases
from 0.2 to 0.6 T, the anode current drops from 8 to 5 kA and the anode volt-
age rises from 200 to 500 kV, Shown are also curves depicting the dependence
oF the output power on the magnetic induction in resonator systems closed
either on one side or on both sides. It has been demonstrated that pulse
magnetrons with resonaCors closed on one side deliver one order nf magnitude
more power than those with resonators either closed or open on both sides.
Figures 3; references 8,
USSR
UDC 621.385,64
MILLIMET~R AND SUBMILLIMETER MICROWAVE SURFACE-WAVE MAGNETRONS
Khar'kov VTOROY VSESOYUZNYY SIMPOZIYUM PO MILLIMETROVYM I SUBMILLIMETRO`IYM
VOLNAAf [Second All-Union Symposium on Millimeter and Submillimeter Waves]
in Russian Vo1 1, 1978 p 3
LCVIN, G. YA.
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No l, Jan 79
Abstract No 1A89 by E. Pi. Guttsayt]
[Text] A series of problems is touched upon which deserve consideration in
the study oF low-voltage surface-wave magnetrons, namely: feasibility of
increasing the efficiency and output power; special features of starting
FOR OFFICItiL USE UNLY
37
APPROVED FOR RELEASE: 2007/02/08: CIA-RDP82-00850R000100090019-1

APPROVED FOR RELEASE: 2007/02/48: CIA-RDP82-44850R000100094419-1
~dC~ tlA'rtCIAL tJSF, ONLY
ch~ract~rigtic~ and cxtrnpe~lar rndi~eion; mathod~ of noi~Q reduc~ia~; f.~aAi-
l~iliry n~ ~xe~nding th~ cathnd~ lif~, iner~ae~ng thu ~tgbillty nf d~cill~-
tinn~; ~nn~~'n~- ~~~flin ~wavelcngthnconseruceingnsubm~llimetertweve~magn~tr~on~.
nutlook fnr sho ~
UtiC 621.385.633
- U55R
A it~i.A" t'?IS'TIC Mt~.i.Irt~'~~It-WAV~ CAItC?.NOTItON
Mogcdw pI5'MA V ZltUEtI~AL TCKHNICN~SKOY ~IZIKI in ttu9sian No 4, 1978 pp 817-
~20
tVANhV, V. S., KOVAL~V, N. K1t~MENTSOV, 5. I~ and RATZ~It, M. D.
(t'rom ~EFEttA'TIVNYY ZHU~NAL, ~LEKTRONIKA I YBY~ pRIMENENIYE No 1, Jan 79
Abstr~ce No 1A118 by E. M~ Cuttsayt]
['Text~ A relativtstic b~ckward-wave tube oacillating at wavelength within
tlie g+l mm h~nd was gtudied. The line::r electron beam was made to irit~raCt
with ttie negative fundamental space component of the w~v~, the latter propa-
gating through g rpctangular waveguide wieh antiphasally corrugated coide
walls. 'Che electron gun wiCh a Cungsten-wire cathode and a cylindrical
stainless-steel anode 7 mm in ctiameter produced a beam with a current den~i-
ty of the order of 104 A/cm2. This electronulsemsolenoid asiusedaproduc-
and ~~mounted to 300-500 A. ~or focusing a p
ing a magnetic induction of approximately 1 T. 'fhe power termination of
the backward-wave tube w~s benr through a 90� angle, with mica-vacuum seal-
ing and nn ouC~ut horn. The purpose of bending the termination was to di-
vert electrons and products of caChad~ ~vaporation from the mica window.
The output power was meusured with a receiver horn and a cryogenic semicon-
duccor-type decector. It was of the order of 10~ W, at a pulse duration of
15-20 ns and an efficiency of approximately 3 perceet. References 4.
38
FOR OFFICI~+~ USE U~iLY
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~~~t d~~tGtAL U51s dNLY
USSk UDC 6~i~~~~~~35
EVApOttATIbN tlt~ M-CATt10D~3 aN VAR~OUS 9A9FS
Kiev VESTNIK KtEVSKOCO UNIVERSiTETA, ~fZ~KA in Ru~~~an No 1~, ~.~7~ pp 6~.-66
LUS![KIN, A. Y~.
(From RE~ERATIVNYY ZHURNAL, ELEKTRONiKA I Y~YE rRiMEN~NtY~ No i, Jan 79
Abgtract No iA152 by F~ 3. Vaynehteyn~ ~
(T~xt] Wieh reg~rd to coatin~~ of M-cathod~g on v~~iou~ ba~e~, a etudy wa~
m~d~ conc~rnin~ th~ ~v~poration kin~~ica ~nd th~ compo~itiion of evaporaeion
produces. As ba~~~ served cup~ S mta in di~m~ter m~de of paeeiv~e~d grad~
NO nickei (~.01 wt. p~rcent carbon~+magneeium ~nd ~0~0~3 wt, pe~tcent oth~r
impuriti~g), acttvated grade NIKA nickel ~O.OOS wt. percent c~lcium), or
grad~ NO nick~l doped with ~a~ ~nd C'~' ion~ at a 20 keV ~nergy level. The
mnximum doge of impl~nted barium w~s approximately 10 u literg/cm2. Th~
study w~a perform~d by mas~-gpectrometry With the ~fd o~ unse~?l~d-gla~g mdg~
an~lyzers, undEr a vacuum of the order of 1~"8 mm Hg. The experim~ntal datn
havc rev~aled fre~ barium, free strontium, barium oxidp and barium hydroxide
at ~ufficientiy high nickel temperatures, and in many casee (especially on
pasgivated cathode bases) aleo molecular oxygen. The quantitatlve balance
between barium + strontium on tt~e one hand and barium oxide on th~ other wag
found to d~p~nd on the degre~ of base ~ctivatSon. In order to produce an
M-cathode wich excellent emisgion char~cteristicg, it ie nec~ssary to enaure
a high concentration of inetal on th~ oxide surface. The exc~llent emission
characteristics are due to the relatively small fraction of free metal strong-
ly bonded to the lattice of the oxides. The remaining metal easily evaporates
during the first heating stage. References 14.
39
FOR OFFICII,L U5E ONLY
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~att d~'~tCtAL tl~~ dNLY
US~~ UnC G21.~~~~624tG21.~.032.2~b88.~)
A CbLt,CC'TOR ~Oit AN 0-TYrE MICROWAV~ ELECTRON DEVICE
USSk P~e~ne Gia~~ 1{ O1 J 23/Oa7 No 571845 di~cioeed 3 May 76 (No 23S54~S)
publiehpd 7 Oce 77
GINZBt1ttG, V. Y~. , KURIL~, V. P. , KUCHUCt1RNYY, V. I.,~.EBEDiN3K~Y, S~ V. and
Ml11~' TSEVA, ~ . A.
(From REFERATIVNYY 2HURNAL, Ei,EKTRONIKA I YEY~ PRiMENENIYE ho 1, J~n 7~
AU~tr~ce No iAi23. Summ~ry~
(`~~xt~ A coli~ctor for an 0-type microwave eiectron dev3ce ie propoged re-
ferring to Patent No 271661. For increaeing th@ eff ici~ncy at peak power
output frorn eh~ dQVice (by increaein~ the current flow to this collector),
th~ precollecCor on the side ad3acent to ehe asynmi~atric elem~nt is made con-
vex in the direction of el~ctron motion and has holes faailit8~ing the pas-
sage of electroes, with the convex part of the collector eurrounded by a
metnilic ring f~stened to the end of the asymmetric element.
40
FOR OFFICII.L L'SE ONLY
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~t~tt tl~~~C~AL U5~ ONLY
G~n~r~l Praduetion T~chnoiogy
U53R UDC 621.396~6.002.72:621~757(089.8)
A DEVIC~ F~It ~ACKAC~NG OF Ct'L~NDt2IGAL ELECTRON'IG PARTS WITH AX~AL LEADS
~N PAGKAGING ~ILM
USSR AUTHOR'S CERTtF~CATE Nc 588571 fi1~d 26/12/73 No 1980554 pubiish@d
24/0l/78 in Ru~~i~n
SHEVINOV, P. A., DR~MtlKN, C. M., STEPANENKOV, N. L. ~nd PIGOLiTStN, V. 5.
CFrom itE~E[tATiVNYY ZHURNAL RADIOTEKHNIKA No 1, ].979 Abgt~~ce No iV533PJ
~T~xeJ A devic~ ig ~ugg~ge~d for pack~ging of eylindrie~l e~eetronic paree
with ~xini i~ed~ in p~ek~ging fi1m, iacluding an accumul~eor for ~torag~
of th~ p~re~, meehani~mg for ehaping of ehe film, feeding of ehe film and
elogur~ of ~pertures in the f ilm de~igned to hold the parts wieh a roller
clo~ing mechanism, a d~vice for plucemen~ of ~he pares, including transpore-
ing disks nnd ~uide plate~, and a drive mechanism with a g~ar-type trane-
missi~n.
41
FOR OF~ICIiw U5E OYLY
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FOlt O~~~CtAL U~~ ONLY
~n~trum~n~~, rt@~suring Devic@~ And TQ~tQr~;
Method~ af M~aeurin~
t73SR UDC 621. ~~7 .7 . ~29. ~i
DASIG REQUIREM~NT~ ~OR M~CR~WAV~ RAD~O ELEMENT3 FOR 1~ASUREM~NT APPARATtJS
2-Y V3~S. S~MPOZ. PO M~LLIMETROV. 't 3USMILt~~M~TROV~ VOLNAM. KHAR'KOV, 1978
'fEZ. DOKL. T~ 1(2nd A11-Union 3ympo~ium oa Mil~im~~~r ~nd Submiilime~er
W~v~~, Khar'kov i979 Abgtraee~ of Repor~~ Vol i~ ~n Ru~~ian, Khar'kov 1978
PP 117-11~
GERSt{UN, V. I., GERMAN, YU~ A., RtJMYANT3fiV, A~ i. and STARIKOV, V. D.
[Frdm RE~EttJ1T~VNYY 2!{URNAL RAD~OTEKNNiKA No l, 1979 Ab~Crac~ No ~A371 by
Ye. L~ ~ori~ova~
('Cexej A eable i~ pr~sented in which the ba~ic types and paramee~rg of
microw~ve r~dio el~m~nts u~ed for performance of the main tasks in rndio
meegurement equipm~nt ope~ati,ng in the microaave range ~re indicated. The
most genera~ requirements for radio elements are fonaulated.
U5SIt UDC 621.317.1.029.6
M~A5UCtEMEI~S'T U~ RADIO-FttEQU~NCY EMISSION 0~ THE 1JNDEitLYING SUR~ACE IN TH~
'I1J0-MILLIM~TER AND TfiREE-MILtIMETER ATMOSPHERIC TRANSPAItENCY WINDOWS IN
NdRtZONTAL AND VERTICAL POLARIZATIONS
2-Y V5~S. 5IMP02. PO MILLIMETROV. I SUBMILLIMETROV. VOtNAM, KlIAR'KOV 1978
TEZ. DOKL. T. 2~2nd Al1-Union Symposium on Millimeter and SubmillimpCer
6'~ves, Khar'kov 1978 Abstrgcts of Reports Vol 2~ in Russian, Khar'kov 1978
p 172 f
GANIN, YB. V., KU2NETSOV, I. V., KRASNYANSKIY, A. D., KRYUKOV, C. M.,
KULIKbV, YU. YU., LEBSKIY, YU. V., MAL'TSEV, V. A., SANDLER, B. M., SIZ'MINA,
t.. K., ~DOS~1tEV, L. I., SHVETSOV, A. A. and YUROKIN, V. V.
[From R~~ERATIVNYY 2HURNAL EtAADIOTEiMNIKA No 1, 1979 Abstract No 1A381 by
A. V. Kuzn~tsova~
~Text~ Th~ results are presented of experimental studies perfor~nad in the
spring of 1977 in the central belt of Russia. The fluct~:.tion n�~nsitivity
of the supcrheterodyne radiometer was '0.3 K at 2.09 mm and 0.2 K at 3.34 mm.
Valueg nf brightnesg temperature of the surface of the earth covered with
snow, dry grass, forest and brush, plowed fields, as well as artificial
covErings ~uch as asphalt, concrete, etc., are presented.
42
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,
FOR OFF~G~AL U~~ t~NI,Y
uss~ vDC 6a~,3i~.~:6ai.391,az2
A SALIU-STATE RAD~OMETEIt APERATING AT 8 A41 WAVEtENGTK
2-Y V3~S. SIMPOZ. PO MILL~METROV. I 8UBMILL~M~TROV. VOLNAM, K~IAR'KOV, ~.~~8
'CEZ. DOKL. T. i(2nd A11-Union 3ympo~ium on Mill~met~r ~nd Subm~.llim~ter
Wavp~, Khar'kov i978 Abeeract~ of Report~ Vo~ 1] ~n Russi~n, Khar'kov 19~8
Pp 216-217
KbSOV, A. S., NEMLIKHCR, YU. A~, ~tUKAVITSYN, A. F., SKULACH~V, b. p~ and
STRUKOV, 2. A.
CFrom REFERATIVNYY ZIIURNAL RADZOTEKIINIKA No 1, 1979 Ab~tract No 1A483 by
A. V. Ku~nee~av~~
(Tex~~ A seructurnl di~~ram is presented of a millimeter w3ve band modula-
tion radiometer, in whicl~ modulation of Che microwave eignel i~ nchieved
by m~en~ of a ferriC~ ~witeh based on a Y-circulator with mean losses in
c1~~ tr~n~missian band of '0.7 dB decoupling of the arms of >18 dB, modulat-
ing fr.~qu~ney 300 I1~. The radiomet~r is c~lcul~t~d using the signal of a
gemiconducCor noisp grnerator made with a Cunn diode. The fluceuation
~~nsitivity of tt~e radiometer is 0.08 K, with a time constant of the output
filter of 1 s.
USSR UDC 621.317.757(088.8)
A SPECTttAL ANALYZ~R
USSR AUTHOR'S CEItTIFICATE No 595682 filed 12/07/76 No 2379872 published
28/03/78 in Russian
'fSUR5KIY, D. A., PERETYAGIN, I. V. and ZAKIROV, V. KH.
(From R~FEItATIVNYY 2HURNAL ItADIOT~K~INYKA No 1, 19~9 Abstract No 1A430P]
(Text] A spectral analyzer is proposed, in which, in order to increase the
accuracy of analys~s, sequenrial connecCion of the strobing device, firsC
fil.Cer, first detector and difference ele~nent is used, as well as series
connection of the second filter and second detector. The input of the second
filter is connected to the second output of the strobing device, while the
output of the second detector is connected to the second input of a differ-
encE element, and also a series-connected circuit consisting of a control
unit and a test signal generator, the output of which is connected to the
43
FOR OFFICIe~L U5E OVLY
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~OCt 0~~'~CIAL US ~ ONLY
tciput n~ a pre~Ql~cedr, th~ mecond ouCpuC of ehe contr~l un3e being connreCed
tn tlic input nC n h~terodynn w~.Ch linaar l~'M, thc~ ~h~.rd nurpue of the cdnrrol
untt Ucing ronneCred Co th~ inpuC ~f Ch~ etrobin~ un3C, while thr. ync~ncl
input oE the ytrobing unie i.~ connecred to thQ inpue of ~n indicnCor, the
nueput of whic}~ is conn~eted to Che input of tih~ conCrol un1t, the second
inpue of ehe control unit be~ng cannected to the outpue of rhe d1�ference
~Lem~ne,
USS1t UDC 621.317.75~(088.8)(47~5~)
A 5P~CTEtAL ANALYZ~I~
USSR AUTliOR'5 C~ItTIF'ICATE No 600466 filed 15/01/75 No 2097208 published
11/04/78 in Russian
KItYUCEIKOV, 0. K. , CFiV~RTKIN, YU. L. and ANTIPOV, A. T.
(I'rom RE~EItATIVNYY ZfiURNAL RADIOTEK~iNIKA No 1, 1979 Abstract No 1A419P]
~'Text~ The spectral annlyzer contains m para11e1 channels�with fi1C~^;,
detector, ineegrator and a dev3ce for separation of the maximum signr~l in
each chattnel, a scan generator, multiswitch, control device and CRT. In
order to increase the time resolution, the device contains n-1 cells for
sep~~ration of the maximum signal in each of the channels, n-1 series-con-
nected frequency dividers and a brightness modulator. The outputs of all
m~n cells for separation of the maximum signal are connected through the
m~i].tiswitch to the signal input of the CRT, Che output of the brightness
modulator is connected ta the input which controls the brightness of the
~FtT beam, the output of Che frequency divider with number K is connected
to the inpuC for conCrol of "write without compare" of stage (K+1) and
the "write with compare" of stage (K+2) of the array of cells for separa- .
tion of the maximum signal, the input for control of "write with compare"
of the second stage, the input for control of "write without compare" of
the first sCage and the input of the first frequency divider are connected
to the first output of the control device, the second output of the control
device is connected to Che input which synchronizes the multiswitch and the
input of the brightness modulator counter, while the overflow output of this
counter is connected Co the input which starts the scan generator.
44
FOR OFFICIru, USE ONLY
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FOE! OrrZC~AL US~ ONLY
USS~ UDC 62~~317~757(088~8)(47*57)
A SPECT~AL ANALYZER
US5~ AUTHOR'S CCttTZ~'ICATE No 56'7144 filed 6/0~/75 No 2093067 published
15/08/77 ~n Russ~.an
IiATT, D. G~, BLATOV, V. V. and NOVOZI~ILOV, YE~ I~.
(T'rom it~~'EItATIVNYY ZHUI2NAL RAllIOTEKHNIKA No L979 Abstr~cC No 1AG31P]
~ (Text] A specCral analyzer ia suggested ~.n which, in order to ~.ttcrease ~c-
curacy, a wideband fi~Cer, n flip-f].ops, a second decoder, a second counter,
nn ~nricoinc~.dence elemene, a s~ave generator producing pulses of ad~ustable
length and n tuning e~.ements have been introduced. The wideband fiLCer i~
cannected between the input of the mixer and the input of an:analyzer, to
which the first inpue of the anticoincidence element is also connected. The
second input of the anticoincidence element is connected to ehe output of
the slave ~enerator, one input oE wh~.ch is connected to the ouCput of the
second counCer, the inpLt is connecCed to a threshold element, while the
other input is connected through the n Cuning elements tn the outputs of
the second decoder, the reading input of which aud the blocking input of a
sawtooth volCage generator are conneceed to a second counter, while the n
other inputs of the second decoder are connected to the n outputs of the
flip-flops, the signal inputs of which are connected to the outputs of the
�irst decoder, while the clear inputs are connected Co Che output of Che
slave generat~r.
.
45
FOR OFFICInL USE OYLY
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~'nIt OA'rICrAL U5~ ONLY
Microeleceronic~
U55it UDC 621,382.33-181,48
A BIPOLAR DYNAMIC ELEM~NT FOR LARGE-CAPACI'I'Y MEMORY
Moscow SBORNIK NAUCHNYKH TRUUOV PO I~ROBLEMAM MIKROEL~KTRONIKI ~Scientif~.c
Trans~cCions on probl.ems ~.n Microe~ecrronics, Collection of Are~.cles] in
~ussien, Moecow '[naeieute o� ~lectronic Eng~neering No 3G, 1977 pp 109-iii
n~1t~ZKIN, V. A., VOLQDIN, Y~~ B., GERSH, B. M~ and UDOVIK, A. P.
(From R~FERATIVNYY ZHURNAL, ~LEKTRONIKA I YEY~ PRIMENENZYE No 1, Jan 79
AbaCract No 1B313. Summary]
[Text] Vari~nts of bipolar dynrimic elemente are examined suieable for memo-
ries with data storage in Che form of charges on the depletion-layer capaci-
tances of p-n 3unctions. The prospects for producing integraeed-circuit
memories on the basis of such devices are clarified.
USSR UDC b21.382.33-181.48
TNJ~CTION-FE~D INTEGkAT~D CIRCUITS
Moscow ITOGI NAUKI I TEKHNIKI VINITI. SERIYA ELEKTRONIKA I YEYE PRIMENENIYE
[Results of 5cience and Technology. All-Union Institute of Scientific and
Technical Information. Series Electronics and Its Application] in Russian
Vol 10, 1979 pp 208-243
KREMLF.V, V. YA.
[From R~rERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79 -
Abstracr No 1B314]
[Text] A brief analysis is given of the main bipolar IC structure topogical
variants with in~ection feed. A survey is also given of structure-topologi-
cal means to achieve a high packaging density in modern integrated circuits
and also to increase their speed. Particular attention is paid to the method
of functional integration. All known designs of functionally integrated
components with injection feed are systemaCically examined and classified.
The present state of the art is reviewed and Che latest developments in
functional integration are described. The fundamental principles underly- ~
ing the synthesis of this new class of in~ection-feed circuits for in~ec-
tion-FE (f ield effect) logic are also outlined.
46
FOR OFFICIn:. USE O~LY
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t~'Ott O1~r~ClAG U~ ~ ONLY
US5R UD~ 62~,383,292.8.008,8
A TlICitMOELCC'CRtC M~CROCOOLER
U55tt patent C1as~ r 25 21/02 Et O1 .T 43/04 No 603812 disc~og~d 10 May 7~
(No 2474101) publ~.shed 3 Apr 78
PdL~TAYEV, A. V~ and SHMURAK, S~ Z~, Znstitu~e of Solid-SCaCe phys~.cs,
USS~ Ac~demy of Sc~.ence~
[~rom RE~ERATIVNYY ~HUItNAL, ELEKTRONTKA I YEYF pRIMEN~NIYC No l, Jan 79
- Abstrace No 1A188
(Text~ A ehermoel~ctric microcooLer is descr3bed which ~nclud~s a th~rmally
in~ulaeing ~acket. Inside the laCter, coax3a11y, is placed ~ cylindrical
m~enl can cone$ining a photoelectron muleiplier, th~s can having a center
hdle in one of its bases and connecCed to the thermoelecer3c battery. ~or
c? t~igher n~easurement accuracy, the thermoelectric battery is located away
from ehe end with a center hole at a dietance 1.1-2 times larger than the
radius of the can base. Along the axis of the center hole is placed a her-
metic hollow bulb with a vacuum space.
USS~ UDC 621.396.6-181.48(088.8)
~ A T~ST UNIT FOR INSPECTING THE PARAMETERS OF INTEGRATED MICROCIF2CUIT5
USSR Patent Class G O1 K 31/28 No 570856 discloaed 29 Apr 76 (No2351714)
published 13 Sep 77
DUBOVIS, V. M., EINTONOV, 'YU. I. and CHERNYSHOV, YU. N.
[From REFERATIVNYY 2HURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstrnct No 1B315]
[Text] The test unit for inspecting the parameters of integrated microcir-
cuits includes an amplifier with the input connected to voltage d~viders
between the IM outputs and a common busbar, as well as a feedback divider
between the amplifier output and the common busbar, and a temperature sta-
bilizing resistor. In order ta prevent a commutation of circuits in the
_ inspected IC, the unit further includes two additional voltage dividers
and two resistors of operational amplifiers, with the noninverting input of
the first one connected to the feedback divider and the noninverting input
of the second one connected through the temperature stabilizing resisCor to
the common busbar, while the inverting inputs of both operational amplifiers
are connected to the corresponding inputs of the tested IC and through re-
sistors to the outputs of these operational amplifiers. One input of the
47
FOR OFFICII,L U5E OvLY
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1~'Ok O1~ 1~ 1 Cl I AL Iltii; t~N1,Y
thtrd op~rat3ondL ~mplifier i~ eonnecti~d eo one of tih~ ~ddirional voltage
dividers baeween the output~ of the fir~t and tha third operatiional Ampli-
fiers~ The second inpuC of th~ third operational ampli�~.er is connectied Co
the ~d~ond addit~.ona1 voirage div~dQr betw~~n the ou~pu~ of eh~ ~~e~nd oper~-
Cional amplifier and the common busbar.
USS~ UDC 621.396.69-181.48(088.8)
A llIELECTRIC COMPOSITION FOtt INSULATION DETWEEN LAYERS
' USStt AUTHOtt'S CERTIFICA'TE NO 574776 filed 10/06/76 No 2371057 published
3/10/~7 in ttussinn
PURON~N~, Z. M~, KRASOV, V. G., KOLDASHOV, N. D~ and TURCHINA, G. V.
(~rom REFEIt~1TIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1VS11P]
~'~ext] A dielectrlc composiCion is suggested for insulation beCween layers,
used in the technology of large hybrid thick-film microcircuits. The com-
posiCion includes a sitall cement and aluminum oxide as a filler. In order
ed improvE the electrophygicel properCies, the composition conCains silicon
oxide, manganese oxide and chromium oxide, with the following relationships
of components, wt. percenC: aluminum oxide 16-24; silicon oxide 0.05-0.3;
manganese oxide 0.03-0.2; chromium oxide 0.1-0.3; sitall cement--remainder.
48
FOR OFFICI~,L USE UNLY
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FUit U~'FxCIAL i15L ONI~Y
vssR unc 62i,396.69-18i.48(oas,8)
A CONTACT DEVICE
USSR AUTHOR'S CERTIFICATE No. 5~6880 �iled 5/O1/76 No. 2308/30 publ~.shed
16/O1/78 ir Rusaian
LERMAN, Z~ M~, MAMAYEV, G. A., RYZHKO, 0. V~ nnd SUSHENTSOV, V. I~
(From R~F~1tATIVNYY ZHURNAL RADIOTEKHNTKA No 1, 1979 Abatract No. 1V513P]
[TexCJ A conCact device ia suggesCed, primari].y far connection of inte-
grated microcircuits with fLexible lead.~ to band 13nea, containing a base
with parallel plateg and a drive mechanism with an eccentric wheel for
connection of the microcircuit. In order eo increase the reliab3lity of
contacCing and simplify the loading of the microcircuit, the device is
equipped wieh straightening and contacting elements and boots, each of which
ia placed on ~he base so that it can rotate and interact with the eccentric
drive mechanism and is equipped wiCh an elasCic dielectric plate Co press
the leads of the microcircuit against the contact elements. Slots are made
in one of the guide plates for Che microcircuit leads, while the sCraighten-
ing and contacting elementa are located in the other plate.
49
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FOR OF~'ICIAL US~ ONLY
PhotoelecCric Effecti
U5SIt UDC 621,383,4
ItrCORDING TF1~ RESPONS~ OF INFRAREb AND SUBMILLIMBTER-WAVE R~CE~VERS IN A
MICFtOWAVE OFFS~T CIRCUIT
Khar'kov VTOROY VS~SOYUZNYX SIMI'OZZUM PO MILLIM~TROVYM Z SUBMILLZMETROVYM
VOLNAM [Second All-Union Symposium on Millimeter and Submi111meter Waves]
in Ruseinn Vol 2, 1978 pp 194-195
'PIItOGOV, YU. A.
[From REF~RATIVNYY ZHURNAL, ELEKTRONIKA I YEY E PRMENENIYE No 1, Jan 79
Abstr~cC No 18381 by N. N. Volkov]
[Texr] A contacCleas photoresisCor circuit is proposed which records infra-
red ~nd submillimeter-wave radiation, without contact noise in the photosen-
sitive element, much faster than conventional photoresistor circuits. The
phorosensitive element is placed inside a microwave waveguide or reaonator
cavity. As the conductance.of the photoresistor changes, so does Che reflec-
Cion coefficient with respect to microwaves at the photosensitive elemenC.
Suc}i a circuit with a~ermanium photoresistor at Che a= 8 mm wavelength is
described with which a threshold sensiCivity to noise emission power as high
as 10'12 W/Hz1~2 has been artained. The design of a microwave detector head
for operation with InSb photoresistors at the a= 3 cm wavelength is also
shown. In this case the threshold sensitivity Co noise emission power is
2�10"12 W/Hz1~2, at a noise factor of 10 dB, in the response channel of the
microwave amplifier. Figures 3; references 2.
U5SR UDC 621.383.4
AN IMPURITY PHOTORESISTOR IN AN INTERFEROMETER TUNED TO THE WAVELENGTH OF
INCIDENT RADIATION
Moscow RADIOTEKHNIKA I ELEKTRONIKA in Russian Vol 23 No 10, 1978 pp 2189-2193
ANTONOV, V. V., VOYTSEKHOVSKIY, A. V., DUNAYEV5KIY, G. YE. and PETROV, A. S.
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Absrract No 1B382]
[Text] The threshold characteristics of impurity photoresistors with micro-
wave offset are calculated for the case where an underabsorbing device of
this kind has been placed inside an opCical interferometer tuned to the wave-
length of the incident radiation. It is shown that almost complete absorption
50
FOR OFFICInL USE O~TLY
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~'Oit U1~~ICTAL US~ dNL,Y
of the deCectable incident rad~.at�ion can be aCtiained by matching the reflec-
tion coef�icient at ehe aemitranslucent intierterometer mirror. The spectral
char.~cter~.stic and the radiation pattern of ehis k~.nd of phoCoregistor are
analyzed. Because of ehe ae~.ece~vity of an npCical ~.nter~erometer, the
specCral char~cterigCic of the rece3ver comprises a series of narrow dis-
creCe spectral lines. The calculated radiation paCtern reveal.s a etrong de-
pendence of the aperture attgle on the absorption coefficient wiCh respect to
incidene radiation in the photoresis~or material,
- US5R UDC 621.383.52
FUNCTIONAL RELATION BETWE~N PHOTODETECTOR P~R~ORMANCE PARAMETERS AND TH~IR
OPERATING CONDITIONS
L'vov FIZIC~IESKAYA ELEKTRONIKA [Physical Electronics] in Russian No 16, 1978
pp 59-63
STEAPNOVA, G. A., BARANOV, V. A., GIMATUTDINOVA, G. I. and YUMAKULOVA, F. F.
[From R~rERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abarract No 1n391 by M. B. Ushakova]
[Text] The results of a study are presanted pertaining to the dependence of
basic photodetector performance garameters (integral and threshold sensitivi-
ty, noise) on the operating conditions characteristic of automated systems
with photoelectron devices. Empirical expressions are derived ahich describe
the effect of background light ~Tcolor 2850 K, illuminance ~ 50 lux; ~ 1 lux),
nf the radiation modulation frequency (f~ 200:10,000 Hz, ~f= 50 Hz), and of
the ambient teMperature (-50 :+50�C) on the basic performance parameters.
The study was based on industrial silicon photodetectors (FD-9K, FD-lOK) and
germanium photoreceivers (FD-lOG). Tables 1; references 4.
51
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FOR OFt~'~CIAL US~ dNLY
USSk UDC 621.383.52:015~51
~'~ASI~ILI1'Y 0~ BUILDZNC A PULSE AVALANCNE PHOTODETECTOR WITH A STABLE IN-
TRINSIC GAIN ON A METAL-DZELECTRIC-S~MICONDUCTOR STRUCTURE
Mogcow KVANTOVAYA ~LEKT~tONIKA in Rus~ian Vo1 5 No 9, 1978 pp 1918-].923
KRAVCHENKO, A~ B~, PtOTNIKOV, A~ and SHUBIN, V. E~
(From ~~~~itATIVNYY ZHU~NAL, ~LEKTEtONIKA Z YEY~ ORIM~NENIYE No 1~ Jan 79
Abstr~cr No 18399~
[Text~ A thenretical and exp~rimental study wa~ made of the pulae ~valanche
dynamics in a metal-dielectric-semiconductor (MOS) structure. It has been
shown ehat avalanche due Co a linear rise of voltage is a quasi-equil~.brium
process~ A complete correspondence is noted between experimental data and
the theoretical model. The fundamental differences between avalanche dynam-
ics in nn MOS strucrure and in a p-n ~unction are establiahed. Also eatab-
liiahed is the fee~ibility of utilizing this effect in the design af new
type optoelectronic phoCorecording systemg. Figures 5; references 15.
52
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~ax o~r~c~n~ us~ dNt,Y
Pu1ep Techniqu~~
USStt UDC 621.373~52(088,8)
AN INFRAR~D ~REQUENCY PULSE GENERATdR
USS~ AUTNOtt'S C~tt~tFICATE No. 580629 fi.led 24/04/72 No, 1776042 pub].i~hed
11/11/77
MIKHAULOVSKIY, V. S.
~From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstrnct No 1G343P~
fText~ An infrared fraquency pulae generator is suggested, containing three
time-fixing stage,~ consiating of a current-fixing and discharge transistore
with differ~nt types of conductiviry, connecCed in a regenerative circuie,
plug nn aacumulating condengor in the collector circuit of Che current-fix-
ing trangistor, shunted serie~-connected stabilieron and re~istor, connect~d
to the base o� the discharge transistor. In order Co expand the functional
capabilities, the time-fixing stages are connected in a loop diode circuit,
which is connecCed to the collector of the digcharge eransiator of the pre-
ceding time-f~.xing stage and to the connection between the condensor and
the stabiliCron of the following tirt?e-fixing ~rtage. Reference 1.
53
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~o~ o~rzcrnL us~ oN~,Y
~uantum Electronics .
UDC 621~396
itOI,OCRAPNY ~N ANTENNA ~NGINEERING
Moscow COLOGRAFIYA V MLKROVbLNOVOY TEKHNIKE (Holography in Microwave Engi-
neering) in Ruse~an 1979 s~.gned Co prese 6 Dec 78 pp 2, 319-320
~Annoration nnd tgble of contenes from book by Lev Davidovich Bakhrekh
Al~ksandr PeCrovich Kurochkin, Izdatiel'stvo "Sovetskoye radio," 8~000 copiea,
320 pages~
(TextJ A wide range of problems connected with the uae of holograph3c meth- ~
odg in antenna engineering and applied electrodynamics ie examined.
~xperimental marerial is cieed, which illugtretes the achemes end method of
solving problems of anCenna engineering and reveals the potentials o� holo-
gruphic methods in the deaigning and testing o� antenna aysCems.
The boak is intended for $peci~lisCs dealing with ~pplied ~l~rtrodynamica,
antennas and radio holography. It will be useful to atudenta intereated
in these questions.
Contenta Page
A'oreword. ~ . . . . . . . . . . . . . ~ . . . . . . . . . . ~ ~ . . 3
Introduct ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Ahbreviations . . . . . . . . . . . . . . . . . . . . . . . 11
~ Chapter 1. Principles of Holography and the Optical Procesring of
� Information . . . . . . . . . . . ~ . ~ . . . . . . . . . . ~ . . . 12
1.1. Ceneral Concepts . . . . . . . . . . . . . . . . . . . . . . 12
1.2. Diagrams of the Recording of Holograms and the Reconstruc-
tion of an Image . . . . . . . . . . . . . . . . . . . . . . 18
1.3. Microwave Holography . . . . . . . . . . . . . . . . . . . . 20
1.4. Methods of the Coherent Optical Processing of Information . 24
Chapter 2. SubstanCiation af Holographic Methods of Modeling and
Reconstructing Microwave Fields . . . . . . . . . . . . . . . . . . 32
2.1. Determination of a Field in a Remote Zone From a Known
Field in a Near Zone . . . . . . . . . . . . . . . . . . . . 35
2.2. CondiCions of Similarity When Modeling Microwave Fields 48
2.3. Integral Transforms and the Optical Modeling of Antennas
Modeling the Fields of a Cylinder and a Sphere. 60
2.4. Determination of the Integral Characteristics of Antennas
in Optical Modeling . . . . . . . . . . . . . . . . . . . . 64
2.5. Nonscalar Madeling of Images and Diagrams of the Scattering
of Volumetric Ob~ects . . . . . . . . . . . . . . . . . . . 66
54
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Chapt~r 3. ~orma~ion of tha Completa Diatri.but3one of Fielde~ 69
3~1. Formation of Ampli~.ude and the 9~mpiest Phase D~,etributions~ 70
3~2. Holographic R~cording of ComplaCe Distr3bution~. 73
3.3. Se~.ection o� the SpaCi~l C~rriar ~requency . . . . ~ . ~ ~ ~ 77
3.4. Meehods o� Decreasing the Background of the Reference Compo-
nent of a Hologr~m . . . . . ~ . . . . . ~ . . . . . . ~ ~ . 83
3.5. Discretie Holograme . . . , . , , . . . ~ . . . ~ . . ~ . . , g4
ChapCer 4. Optical Modeling of Microwave F3a1ds. Quastions of
Pr~ctical Realizaeion. . . . . . . . . ~ ~ . . . . . . . , , . . . ~ 10~
4.1. Diagramg of ~~v~ces for the Optical Modaling of Microwave
Fields. Optical Models. . . ~ ~ . . . . . . . . . . . ~ . ~ 109
4.2. Measurement of the Distribution of the inten~ity and Phase
of a Light Field . . . . . . . ~ . . . . . . . . . . . . . . 115
4.3. Analye3s of the ~rrors of Optical Modeling . . . . . . . . . 128
4.4. Some Applicationa of Optical Modeling. . . . . . . . . ~ . ~ 133
Chapt~r 5. UeterminaCion of the Parameters of Antennas by Che ll010-
graphic Method According to Measurements in a Near Zone. 145
5.1. Diagrams of the Recarding of Distributione of the Near ~i~ld
of an Antenna . . . . . . . . . . . . . . . . . . . . . . . . 147
5.2. Optical Proceasing of the Resulta of Che Measurement of a
~ield on a P1ane and on a Sphere in the Fresnel Field. 160
5.3. Digital Processing of the Reaults of the Measurement of a
~ield on a Plane and on a Sphere in the Fresnel Fiel.d. 171
5.4. Use of Che Holographic Method for Determining the Character-
istica of the Direction of Antennas . . . . . . . . . . . . . 18S
Chapter 6. Errors of the Determination of the Parameters of Antennas
by the Nolographic Method . . . . . . . . . . . . . . . . . . . . . . 195
6.1. Errors of the Limitation of the Area of Measurement nnd
QuantizaCion . . . . . . . . ~ . . . . . . . . . . . . . . . 198
6.2. Errors of Me~surement . . . . . . . . . . . . . . . . . . . . 221
6.3. Recommendations on Reducing the Errors . . . . . . . . . . . 247
Chapter 7. The Increase of the Accuracy of the Collimation Method of
Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
. 7.1. Diagrams of Measurement . . . . . . . . . . . . . . . . . . . 252 -
7.2. Methoda of Processing the Results of Measurement 256
Chapter 8. Holographic Methods of the Defectoscopy of Microwave An-
tennas and Domes . . . . . . . . . . . . . . . . . . . . . . . . . . 270
8.1. Defectoscopy of Antennas in the Microwave Band 271
8.2. Defectoscopy of AnCennas Using the Methods of Optical and
Digital Processing . . . . . . . . ~ ~ . ~ ~ ~ . . . . . . . 281
55
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Not~s of th~ Method~ of Determining ehe P~rameeere of An~~nnas. 292
App~nd~x. . . . ~ . . ~ . ~ ~ ~ . . . . . . . . . . . ~ ~ . ~ . . ~ . 295
Bibliography~ ~ . . . ~ . . ~ ~ . ~ . . . . . . . . ~ . ~ ~ ~ ~ . ~ . 302
3ubJ ect Index . ~ . . . . . , ~ . . . . . . ~ . . ~ . ~ ~ ~ , ~ . . ~ 317
G~pYRIGEIT: izdatel'gevo "Sovatekoye radio," 1979
7807
C30: 1870
56
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~OR O1~'CICIAL U5~ ONLY
Radare, Radio Navigatora A~,dee, '
D~.raction Finding; Gyroa
unc 62~,7,os4~842,ooL
~ TEt80RY OF RAllAR ALTIMETRY
Moecow TEORETICHESKIYE 03NOVY itADIOVYSOTOMETRII (TheoreCica,l Principles of
Radar A1Cimetiry) in Ruseian ~979 signed ro presg 10 Nov 79 pp 2~ 319-320
(Annotation and table of contenCe from book by Aleksey Petrovich 2hukovskiy
Yevgeniy Ivanovich Onopriyenko Valeriy Ivanovich Chizhov, Izdatel'~t~zo.
"Sovetskoye radio," 4,300 copiee, 320 pagea]
['Text~ The principlea of the Cheory of onboard radar a1Ci.meters and verti-
cal speed indicaCors of aircrafti are set foreh. The principles of construc-
tion of radar alCimeters and the means of deriving information on altitude
and verCical speed are examined~
The peculiarities of the operation of radar aLCimeters, which are connected
wiCh the random nature of a signal reflected from a statisticalLy uneven
surface, are analyzed. Questions of the accuracy of radar altimeters are
studied by the methods of sCatistical analyais and synthesis. The compoaite
evaluations, the fluctuarion and dynamic errors, their interrelaCion wi.th
the statiatical characteristics of rhe reflecting aurface and the tra~ectory
of the movement of the aircraft using varioua types of probe aignals and
means of deriving information are specified. The methoda of calculating
Che errors of radar altimeCers of various typee are set forth.
The book is intended for scientists and grad~~ate students of the radio en-
gineering departments of VUZ's.
Tables 14; figures 125; references 133.
Contents ~ Page
Abbreviations Used in the Sook . . . . . . . . . . . . . . . . . . . 3
Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Chapter 1. Areas of Use and Some Characteristics of Radar Altimeters 10
1.1. General Requirements on the Accuracy of Measurement of Alti-
tude and Vertical Speed of Aircraft . . . . . . . . . . . . 10
1.2. A Short Survey of Modern Radar Altimeters 13
1.3. Probe Signals and Measuring Devices of Radar Altimeters 15
Chapter 2. Introduction to the Electrodynamic Theory of a Signal
Scattered on an Extended, Statistically Uneven Surface. 19
2.1. icandom ~lectromagnetic Fields of Backscattering 20
51
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FOit O~F'~CTAL US~ dNLY
2,2. Probability Den~iCy gnd Momentie of D~.stribueion of Random
F~.e].ds rf ScaeCering , . , . . ~ . . . ~ , . , ~ . . . . . . 36
2~3. Probgb~.lity Dens3ties and Moments of Diatribueion of an En-
vQlope and thQ Phase of a Ref~ected Fie1d, 48
2~G. Cxperimenral SCud~.es o� Che Lawe of Diseribueion of a SignaL
Scattered on Water and I.and Surfaces . ~ . . . . . . . . . . 6].
2~5. Scartering Characteristice of Statistically Uneven SurfacES 64
Chapter 3. Correlaeion FuncGions and Power Characteristica of a Re-
ceived SignaL. . . . . . , . ~ . . . . . . . . . . . . . . . . . . 76
3.1. Spectral-Correlation Matrix and the Time Correlation ~'unc-
rion of rhe Iteceived Signal. . . . . ~ . . . ~ . . . . ~ . . 76
3.2~ Cross-Correlation I~'requency Function of the Received Signal. 83
3.3. Power Characreriatica of the Received Signal 88
Chaprer 4. Spectral-Correlation Theory o� the Received Signal With
Contittuous Radinrion ~ . ~ . . . . . . . . . . . . . . . . . . . . . 94
4.1. SpecCral Characteristics of an Echo With Single-Frequency
Radiation . . . . . . . . . . . . . . . . . . . . . . . . . 94
G.2. 5p~ctra of the Coherent Component of a C~nvereed Signal WiCh
Angular Modulation . . . . . . . . . . . . . . . . . . . . . 100
4.3. SpecCrum and Correlation Function of the Noncoherent Component
of a ConverCed Signal . . . . . . . . . . . . . . . . . . . . 105
4.4. SCructure of the Spectrum of a Converted Signal With FM Radia-
tian . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
4.5. Experimental 5eudies of the Spectra of a Converted Signal With
FM Rad int ion ~ . ~ . . . . . . . . . . . . . . . . . . . . . 120
Chapter 5. Time Characeeristics and Spectra of the Fluctuations of the
Receive~ Signal With Pulsed Radiation . . . . . . . . . . . . . . . . . 125
5.1. Instantaneous and Averaged Echo-Pulses . . . . . . . . . . . . 125
5.2. SpecCrum of Fluctuations of Echo-Pulses and the Cross-
Correlation Function According to Time Segments. 133
5.3. Power Characteristics of Pulsed Signals With InCrapulse
Moclulat ion . . . . . . . . . . . . . . . . . . . . . . . . . . 140
5.4. Experimental Study of Pulsed Echoes . . . . . . . . . . . . . 145
Chapter 6. General Methods of Analyzing the Accuracy Characteristics
of Radar AltimeCers . . . . . . . . . . . . . . . . . . . . . . . . . 148
6.1. Main Sources of Errors of Radar Altimeters. 148
6.2. Methods of Analyzing Errors of Tracking Altimeters 152
6.3. Methods of Analyzing Errors of Nontracking Altimeters. 158
6.4. Dynamic Errors of Altimeters and the Selection of Smoothing
Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
6.5. Errors in Measurement of Vertical Speed. . . . . . . . . . . . 169
58
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ro~ orricrnL us~ oN~Y
Chgpter 7. R~?dar Altimetere Wieh Continuous ltadiation. 173
7.1. Means o� Processing Che Received Signal . . . . . ~ . . . . . 173
7.2~ Discr~.arination,~Characteriatics and Bigs of Evaluation ~n
~requ~ucy Itadar A].ti.meters. � ~ � ~ ~ � ~ � ~ ~ � ~ ~ � ~ � ~ 1.75
7.3. Fluctuation Characterietice of Metere With Frequency Die-
crim~.natora . ~ . . . . . . . . . . . . . . . . . ~ . . . . . 186
7.4~ Engineering Methods of Cnlculating Errora ~nd the Comparison
of the MeCers o� Radar A~.C~mererg Wieh Frequency Detectora. . 195
7.5. Analysis of the Lrrors of a Meter Like ehe Counter of tihe
zeroes of a Signal of Beats . . . . . . . . . . . . . . ~ . ~ 209
7.6~ Analysis of the Errors of Phase Radar Altimeters. 215
Chapter 8. Itadar Altimetera With Pulsed Radiation. 228
S.L. Means of Processing the Received Signal . . . . . . . . . . . 228
8.2. DiscriminaCion Characteristica and Bias of Evaluation in
Pulsed Radar AltimeCere . . . . . . . . . . . . . . . . ~ . . 231
8.3. Fluctuation Charactc~ristica of Diacriminators With One Gate . 239
8.4. Fluctuation CharacterieCics of Discriminators WiCh Two Gates. 245
8.5. Engineering Metihods of Calculating Errors and the Comparison
of the Meters of Radar Altimetere With Different Time Dis-
criminators . . . . . . . . . . . . . . . . . . . . . . . . . 251
8.6. Errors of Pulsed Radar Altimeters WiCh Additional Intrapulse
ModulaCion . . . . . . . . . . . . . . . . . . . . . . . . . . 256
ChapCer 9. Comparative Evaluation of the Accuracy Characteristics of
Radar Altimeters and Questions of the PotenCial Accuracy of Measurement
of A].titude . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267
9.1. Comparison of the Accuracy Characteristics of Radar Altimeters 267
9.2. Ceneral Ratios Used in the Synthesis of Radar Altimeters. 2~3
9.3. Synthesis of Radar Altimeters With the Radiation of Noncoher-~
ent Delta-Pulses . . . . . . . . . . . . . . . . . . . . . . . 275
9.4. Synthesis of a Multifrequency Radar AltimeCer 279
9.5. An Approximate Solution With a Breakdown by Zones of Resolu-
tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283
9.6. Synthesis of Radar Altimeters With Arbitrary Modulation for
the Threshold Signal-to-noise ratio . . . . . . . . . . . . . 289
9.7. Solution of the Problem of Synthesizing Radar Altimeters
Using Computers . . . . . . . . . . . . . . . . . . . . . . . 294
Chapter 10. Indirect Radio Engineering MeChods of Determining Altitude299
10.1. Doppler Speed and Altitude Meters . . . . . . . . . . . . . . 299
10.2. Indirect Method of Measuring Altitude With FM Radiation. 299
10.3. Indirect Methad of Measuring Altitude With Pulsed Modulation 304
Append ix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 311
B ibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312
Sub~ect Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317
COPYRIGHT: Izdatel'stvo "Sovetskoye radio," 1979
7807
CSO: 1870 59
FOR OFFICIA:. USE ONLY
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~ FOR OFFICIAL US~ ONLY
US51t UllC 621,37]..332.3:621,391,883.6(088.8)(47~57) ~
A D~VIC~ ~OR S'TAI3ILYZATION OF THE MEAN FREQUENCY OF NOISE EXCURSIONS ABOV~
A THRCSHOLU LEVEL
USSR AUTHOR'S C~R~ZFICATE No~ 603127 �iled 3/OS/76 No~ 2359318 publiehed
24/03/78 in [~ugsian
ANDit~YEV, F. M., SHISHOV, N. N. and BYCHIKHIN, YU. 7..
[From REFERATIVNYY ZHURNAL RADTOTEKHNIKA No 1, ~.979 Abatract No. 1G111']
[Text] A device for atabi.lization of the mean frequency of noiae excur-
sions above a threshoLd leve]..
USSR UDC 621.372.332.3:621.319.837.42
T:XPEEtIMENTAL STUDY OF THE RELIABILITY OF RESOLUTION OF RADAR SIGNALS
TR. TSNII MOR. FLOTA in Russian No 234, 1978 pp 16-24
DEMIN, I. D.
[From ItEFEFtATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1G9] ,
[TextJ The results are studied of experimenCal studies of the variation
in parameters of resolution of ship radars with reliability of the sepa-
rate observation of signals under field conditions. Figures 3; tables 1;
.eferences 7.
60
FOR OFFICItiL U5E O~LY
. ;
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FOCt OrF~CYAL U5C ONLY
uss~ vnc 62i,39i,84:62].,39]..883,2
US~ 0~ TH~ M~THOU OF ES5ENTIAL S~LECTLON IN CALCULATION OF TNE C1~IA1tACT~R-
ISTICS OF DETECTION OF FLUCTUATING SIGNALS AGAINST A BACKGRQUND OF CORRE-
LATED NOISE
TR~ TSNIZ MOR. FLOTA in Russian No 234, 1978 pp 1~-1.6
KOMISSAItOV, G. I~'.
[From RE~E1tATIVNYY ZHURNAL itADIOTEKHNIKA No 1, 1979 Abetract No 1A64.
5ummaryJ
(Texr] A study is made of the appllcation of the method of esa~ntial
sampling in appraising the effeceiveness of algoriChms for datection of
r~dar signels agnin~t ~ background of correlaeed noise. The detection
characteristics of fluctuating signals againat a background of Markov
Itnyleigh noise ~re prescnted for two deeecCion algorithms. Figures 3;
references 4.
USSR UUC 621.396.96:621.371
MODELING OF TtADAR REFLECTIONS FROM THE SURFACE 0~ THE EARTH
MObELIROVANIYE RADIOLOKATSIONIYKH OTRAZHENIY OT ZENINOY POVERKHNOSTT in
Russian, Leningrad State University Press 148 pp
ORLOV, R. A., and TORGASHIN, S. b.
[From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No 1GSK.
Summary]
(Text] This book is dedicateJ to problems of modeling of radar reflectiona
from the surface of the earth. A review is presented of theoretical studies
on modeling of radar reflecttons, a classification of inethods of modeling
is presented and an analysis given of the statistical regularities of the
morphologic structure of vegeCation. Based on the requirements formulated,
a generalized electrodynamic model of the earth's surface is preaented and
the energetic, correlation and spectral characteristics of scattering are
determined. Considerable attention is given to the production of simple
calculation expressions not requiring the use of special computer equipment.
The book is intended for engineering-technical and scientific workers in-
volved in the development and use of electronic devices, but also may be
useful to graduate students and upper-level students in radio engineering
higher educational institutions.
61
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FOR BF~ICIAL U3E ONLY
USSR UllC 621.396.96:681.32(088,8)(49+57)
A DEVICE FOR SEPARATION OF THE CENTRAL PULSE OF A TRAIN
U53R At1THOR'3 CERTIFICATE No. 56819 filed 18/10/74 No. 2069353 publiehed
18/O1/78 in Ruasian
POLYAKOV, V. I. and FEDININ, V. V.
(From REFERATIVNXY ZHUItNAL RADIOTEKHNIKA No 1, 1979 Ab;atract No~ 1G13P~
(Text~ A device for separat3on of the central pulse of a train.
USSR UDC 621.396.965.8(088.8)(47+57)
A TRACKING FILTEtt
USSR AUTHOR'S CE~TIFICATE No. 614529 filed 7/03/74 No. 2003167 publiahed
9/06/78 in Russian
VOLKOV, V. K., SMIRNOV, N. N. and CHISTOV, YU. G.
(From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No. 1G19Pj
(Text] A tracking filter which contains a retunable filter ia described.
LSSR UDC 621.396.96:681.32(088.8)(47+57)
A b~VIC~ ~'OR PROCESSING OF QUANTIZED SIGNALS
USSR AUTHOR'S CERTIFICATE No. 590758 filed 21/04/76 No. 2354267 publiehed
4/03/78 in Russian
SAVCHENKO, K. P.
(From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No. 1G20P]
(TexC] A device for processing of quantized signals.
62
FOR OFFICItiL USE ONLY
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~OR Or~ICIAL USH: dNLY
USSR UDC 621.396.932.1.
bOpPLER ~ILTI2ATION IN SHORTWAVE DIRECTION ~INDING~ ANALOG-UZGZTAL PROCESS-
ING OF A MODULATED SZGNAL
IN-T ~EMN. MAGNETIZMA, IONOSFERY I RASP1tOSTR. RADIOVOLN AN SSR. PREPR~
in Ruseian No 18, 1978 ].6 pp. iL. (English abstract)
AFRAYMOVICH, E~ L~ and pANCHENKO, V~ A.
~From RE~EFt~1TIVNYY 2I'.URNAL RADZOTEKHNIKA No 1, 1979 AbatracC No. 1G82j
(Text] An analog-digital method of cross-apecera]. analysis of LF processes
ia described.
USSR UDC 621.396.933:527.8
PROCESSING OF' INFORMATION IN OPTICAL DIRECTION-FINDING SYSTEMS
tlgRABOTKA INFORMATSIN V OPTICHESKIKH SISTEMAKH PELENGATSII in Rusaian,
Moscow, Mashinostroyeniye Press 1978 164 pp
LEVSHIN, V. L.
(From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 AbstracC No. 1G81K.
Summary]
[Text] This book analyzes problems of the theory of information processing
in the optical and electronic part of optical-electronic direction-finding
systems, performing the task of locating a small ob~ect against a spaGially
heterogeneou~s background. Optimization algorithms are synthesized consider-
ing the finite resolving capacity of the system and the presence of noise
in the radiation receiver.
' 63
~ FOR OFFICIl~L USE UNLY
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FOR OFrICIAL U3C ONLY
USSR UDC 621.396.962(OSg.B)(47+57)
A DEVICE FOR DETECTION OF ERRORS ZN SYSTEMS FOR TRANSMI3SION OF T~LEMETRY
IN~ORMATION WI~i A R~VERSE COI~NNICATION CHANNEL
USSR AUTHOR'S CERTIFICATE No~ 582572 filed 21/06/76 No. 2373818 published
22/12/77 in Rusaian
MOROZOV, V. M, and ItOMANCH~NKO, S. D~ '
[From REFE1tATIVNYY ZHURNAL ~ADIOTEKHNIKA No 1, 1979 Abstiract No. 1G6~P]
[Texr] A device for detection of errore in syatema for rranamission of
telemetry information with a reverse communication channel containa a re-
ceiver and series-connected predictiion filter, subtraction un3t, compuCing
unit and control unir.
USSR UDC 621.396,965.8(088.8)(47+57)
A MULTICKANNEL PHASE DIGITAL TItACKING SYSTEM
USSIt AUTHOR'S CERTIFICATE No. 593188 �iled 24/OS/76 No. 2364711 published
3/04/78 itt Russian
BUYEVICH, V. K., POLONNINKOV, R. I., POLUSHKIN, A. I., SKOROKHODOV, YE. M. !
and TOLMANOV, A. K.
(From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No. 1G14P]
[Text] A mulCichannel phase digital tracking eystem.
64
FOR OFFICIl,:. U5E ONLY
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~OIt OrI~'ICYAL US~ ONLY
Rec~ivetie nnd Transmittere
U5SR UDC 621.371:551.510.52
APPARA'~US FOR STUDY OF THE FLUCTUATING CNAI2ACTERISTICS OF MILLIMETER WAVES
2-Y VSES. SIMPOZ. PO MILLIMETROV~ I SUBMILLIMETROV. VOLNAM, KHAR'KOV 1978
TE2. DOKL. T. 2(2nd A11-Union Symposium on Millimeter and Submillimeter
Waves, Khar'kov, 1978, Abetr~cta of Reports, Val 2) in Ruesian, Khar'kov,
1978 pp 175-176
~ETISOV, I. N. and ZRAZHEVSKIY, A. YU~
[From REFERATIVNYY 2HURNAL RADIOTEKHNTKA No 1, 1979 Abstract No. 1B345 by
S. N. Gerasimov]
[TexC] A rece~.ver is suggested for aimultdneous recording of ~he inCensity
of a signal., and the vertical and horizontal componenCs of the angle of arri--
val under all weather condirions over the transmission path, including pre-
cipitation. The vertical component of the angle of arrival is measured
using a difference method involving a specixl modulator disk. The horizon-
tal component is measured using a phase method, based on the change in the
phase shi�t 3n the LF signal which arises upon horizontal displacement of
the patCern. The angle-measuremenC channels have a linear characteristic
within limits of 100-200" s. An angle of arrival of >1" was measured with
an error of ~20 percent. A sCructural diagram of the receiver and a dia-
gram of Che placement aperCures on the modulator disk are presented. Fig-
ures 2; references 3.
US5R UDC 621.376.3(088.8) .
A DEVICE FOR RECEPTION OF FREQUENCY-KEYED SIGNALS
USSR AUTHOR'S CERTIFICATE No. 603139 filed 16/07/76 No. 2390812 published
22/03/78 in Russian
SAZONOV, V. D. and KHRISTOV, V. D.
[From REFERATIVNYY ZHURNAL ItADIOTEKHNIKA No 1, 1979 Abstract No. 1D12P]
[Text] In this device for reception of frequency-keyed signals as in USSR ~
Author's Certificate No. 339013, in order to increase the interference sta-
bility, a unit has been added which blocks the output of information, plus
a unit for analysis for the reliability of the change in operating frequen-
cies. One input of this last unit is connected to the output of a pu1sE
65
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FO[t O~~ICIAL USE ONLY ~
gen~r~eor, eh~ other eo tih~ outpuC of th@ uniC for analyeis of th~ narure
of ~heng~ of aper~tittg fr~qu~nci~~. Th~ eueput of the unit for ana~ye~,s
of the reli~b3iity of the change in operating frequencies ie conneceed Co
the control input of the unit for blocking the outiput of information, the
~i~nal input of whieh i~ connected to the outputi of the unit for formation
di th~ output puls~s.
USS~ UDC 621,396.61:621,396.2(088.8)
A D~VIC~ ~OIt TItANSMISSION OF SIGNALS WITH DELTA MODULATION
U55~ ,;L'Tf~OR'S C~RTI~'ICATE No. 577695 filed 7/O1/76 No. 2311989 published
16/11I77 in Rus~ian
CLADCHENKU, V. V., POGINSKIY, L. P. and DOLGALEV, S~ D.
(F'rom ~EF'~KA7'IVNYY ZHUItNAL ItAL~IOTEKHNIKA No 1, 1979 Abatract No. 1D273P~
~TextJ A device is guggested for transmisaion of signals with delta modu-
latton, containing a subCraction unit, the output of which ia connected to
the input of a binary modulator, connected through an integrator to the
first input of the subtraction unit. The device also includes a series-
connected circuit consisting of a synchronizer, frequency divider and strob-
ing unit, the firs�. output of which is connected through the corresponding
valve (Vett�il'] to the second and third inputa of the subtraction unit and
to the second input of the integrator. The output of the f irst valve is '
connected to the other input of the second valve, while the output of the
integrator is connected to the other input of the third valve. In order
to increase the reliability of information transmitted, the device incl.udes
Zn inverting elemenC, a flip-flop and series connected frequency multiplier
and "AND" element, the other input of which is connected to the input of
the invertina element, and the output of the flip-flop. The f irst input of
the flip-flop ~s connected to the second output of the strobing unit, while
the second input of the flip-flop is connected to the input of the binary
modulator. The second and third outputs of the synchron izer are connected
to the input of the frequency multiplier and Che aecond input of the invert-
ing element, the output of which is connected to the output of the "AND"
element and to the second input of the binary modulator.
.
,
66
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~oK nr,~icrnc, us~ oNLY
US5tt UDC 621.396.62:621.391.8(088,8)
A DCVICE ~OR PROCESSING OF COMPL~X 5IGNAL5
USSit AUZ't~iOR' S CERTI~ICAT~ No ~ 607346 fi].~d 25/04/74 No. 2923416 pub118hed
26/04/78 ~.n R~s~ian
SMIIUIOV, N. I., ZALICH~V, N. N., St)DOVTSEV, V. A. ~nd SUDAKOV, YU. B.,
Moecow ~lectron3c Engineer3ng IngCituCe of Communicatiions
(From ItEFERATIVNYY ZHUEt~iAL RADIOTEKHNIKA No 1, 1979 Abstract No. LD4P~
~Text] A device is eugggsted for proc~saing of a complex eigngl, contia~.n-
ing ewo band f~.lt~re connected nt the input, the outpuC of one of which is
connected to the input o� a corr~lator. In order to as~ure invariance rela-
tive to the momene of arrival of the signal and its initial phaee, an ampli-
tude-phase converter is connected between the output of the second band pasa
filter and Che other input of the correlator.
USSR UDC 621.396.626(088.8)
A D~VICE FOR SPACE-DIVERSITY RECEPTION OF WIDffiAND SICNALS
USSR AUTEIOR'S C~RTIFICATE No. 611304 filed 27/09/76 No. 2408681 published
22/OS/78 in Russian
GLADKOV, V. P.
[Ft;m RE~ERATIVNYY ZHUEtNAL RADIOTEKHr1IKA No 1, 1979 Abstract No. 1D9P]
[Text~ The device suggested contains in each of the separated circuits a
series connected antenna, amplifier and conversion section and delay ele-
ment, the output of which is connected to the inputs of two channels. Each
of Che two channels consists of a series-connected matched filter and corre-
lator. The outputs of ehe mntched f ilters are connected to the inputs of a
reference signal adder co~non to all circuits. The outpuC of the adder is
connected to the input of a recirculator. The second inputs of the correla-
tors are connected, while the outputs are connected to the inputs of a sub-
traction unit common to all circuits. The out~ut is series connected to
the input of a decision unit. In erder to increase the interference sta-
bility, eACh separate unit includes a series-connected circuit consisting
of an additional delay element and a strobing unit, the second input of
which is connected to the output of the recirculator. The output of the
67
FOR OF~ICItiL USE ONLY
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APPROVED FOR RELEASE: 2007/02/48: CIA-RDP82-44850R000100094419-1
,
~Ott ~Ft~'ICIAL U3~ ONI~Y
grrobing unir i~ connected to the second inputs of tha correlatore. A
synchronizing signal is fecl to ehe input of the additional delay elements.
U55tt UDC 621,396.626(088.8)
A DEVICE FOR SPAC~-DIVERSITY RECEPTION WITH COHERENT t~DDITLON OF SIGNALS
USSR AUTNOR'S C~RT~FICATE No. 601830 filed 16/Ol/76 No, 2313994 published
11/05/78 in Rueai~n
SHASHIN, YU. V., LOBANOV, V. I~, SHUTOV, G. A., KRASUTSKIY, N. M~, SERYY,
V. P. nnd PUDENKOV, A. P.
~Frum R~~ERATIVNYY ZHURNAL RADIOTEKHNIKA No l, 19~9 AbeCract No. 1D10P~
~Text] A de�vice is prepared which contains in each branch, series-connected
atgndardized-level amplifiera, a firat convertor (C), a narrow-band filter
and a second C. The other input of the last convertor is connected to the
output of the level-setting amplifier. The outputs of the aecond C are con-
nected through a circuit, common for all of the branches, conaisting of an
adder, band pass filter and amplifier-limiter, connected in series to the
second inputs of the first C. In order to increase interference stability
and decrease the threshold of operation when communication is started, each
branch contains a regulated amplifier connected to the output of the second
C, with a square-law detector connected between the control input and the
output narrow-band filter of the amplifier. An output adder is connected
to the output regulated amplifiers of all branches.
68
FOR O~FICIAI. U5E ONLY
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FOtt O~F~CfAL US~; ONLY
Semlconductor~ and Diel~ctr~ca
USS~ UDC 537.31],.33
Et~EC~RICAI~LY ACTI1i~ S~MICONDUCTORS AND THEIR USF FOR MICROWAVE OSCLLLATOR3
ANU FREQUENCY CONVERTERS
Mogcow RADIOTEK~INIKA I ELEKTItONIKA in Ruseiaa Vo]. 23 No 9, 1978 pp 1915-
1925
KALAS1tNIKOV, S. G., KAGAN, M. S. and KUKUSHKIN, V. V.
(~rom REFERATIVNYY 2HUttNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstrgct No iB182]
~'Cexc~ Some reec~lCs are presented of reeearch done at the Inetitute nf
ItAdio ~ngineering (USSIt Acgdemy of Sciencea) which pertain Co new uses of
semiconductora with hot electrnns for microwave osc:illators and frequency
converters. Under conaideration are "ac~ive" aemiconductors with a nega-
Cive dynamic voLume conducCivity bue electrically s~able in the abgenc~ of
external oecillatory circuits. Centimeter-wave and millimeter-wave oscilla-
tors, frequency convertera attd frequency multipllerg have been r~alized ex-
perimentally, with the aid of active elements based on gallium arsenide.
USSFt UbC 537.311.33
GENERATION OF ELECTROMOTIVE FORCES IN SEMICONDUCTORS BY FIELDS OF THERMAL
PULSES WITH LARGE TEMPERATURE GRADIENTS
Leningrad :'I2IKA T TEK~INIKA POLUPCtOVODNIKOV in Rusaian Vol 12 No 8, 197$
pp 1524-1529
AI3ROSIMOV, V. M., YEGOItOV, B. N., LIDORENKO, N. S. and KARANDASHEV, V. A.
(From RE~~RATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1D186]
[Text] An experimental study was made of emf generation in aemiconductors
with and without a poten:ial barrier, by fields of thermal pulses with
large temperature gradients, iollowing absorption of laser radiation pulses.
It has been established that the maximum emf in semiconductors with a poten-
tial barrier can reach 0.2-0.4 V at a density of incident energy equal to
0.03 J/cm2. At densities of incident energy within the range under con-
sideration, the emf in semiconductors with a potential barrier was found to
exceed the emf in semiconductors without a patential barrier by two orders
69
FOR OFFICIRL U5E ONLY
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~OR 0~'FICIAL U~~ ONLY
of m~gn~.tuda. Iti has al~o been demonatratad that the maximum emf generated
by ~ ehermal pu1~~ i.s 100 eim~e higher eh~n the ~tnf generaCed in a steady,�
th~rmal f~eld wi,th the same temperatura drop.
USStt UDC 537.31.1.33
PHYSICAL I'H~NOMENA IN FEItRITE-SEMICONDUCTOR STRUCTURES F1tOM THF STANDPOINT
0~ APPLICA'fION IN MICROWAVE MICItOELEC~RONICS
Mogcow MIKItO~L~KTRONIKA in Rusaign Vol 7 No 5, 1978 pp 430-443
$~;SPYATYKH, YU. I., VASHKOVSKIY, A~ V., ZUBKOV, V~ I~ and KIL'DISHEV, V. N.
[~rom R~FERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jgn 79
Abstr~ct No 1B190~ Summary)
(Text~ Physical phenomena in ferrite-aemiconductor structures are analyzed
which have eo do with inCeractian between natural oscillations or waves of
magneti~atioc? in the ferriCe and charge carriers in the semiconductor. This
interaction is mnnifested in changes in the magnetization resonance apectrum,
in the appearance of a direct emf upon excitation of natural oscillations of
magnetization, in the appearance of an alternating emf upon enhancement of
char~e carriers by magnetostatic-waves, and in.the Cerenkov ef.fect when
charge carriers drift under the influence of an electric field. All these
effecta can be utilized in the design of microwave delay linea with charac-
teristics different than those of ferrite delay lines, in the design of
microweve amplif iers, in the design of selective microwave probea for mea-
surement of power or other quantities, and in the design of information pro-
~essing devices. FurChermore, ferrite-semiconductor structurea can also be
used in conventional nonreciprocal devices, f ilters and power limiters.
Figures 4; tables 1; references 47.
70
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FOR bF~'ICTAL US ~ ONLY
ussx unc s3~.3ii,3s
p-N JUNC'CIONS BAS~D ON CAbMIUM T~LLURID~
Kishinav TEORETICNESKOYE I EKSPERIMEN'rAL'NOYE ISSLEDOVANIY~ SL02HNYKH
POLtiPROVODNIKOVYKH SOYEDINENIY (Theoretical and Experimental Study of Com-
plex Semiconductor Compounds] in Russian 1978 pp 130-133
KRETSU, I. V., NAGRADOVA, I. A., TAMA2LYKAR', I. YE. and 'TSUKANOV, M~ I.
(From RLFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1~ Jan 79
Abstract No 1B202. Summary~
['fext~ A method ie proposed for producing p-n ~unctions on rhe baeis of
electron cadmium telluride by dissolution and recryetallizatinn in bis-
muth. The current-volCage characteristica of such ~unctions were measured
ae the temperaturE of 300 K. The method was employed for producing, on a
low-resistance base, atructures with high direct-currettt densities. ~igures
3; referencea 4.
USSIt UDC 537.311.33:546.681'19
SOME SPECIAL FEATURES OF TH~ IA4'URI'1'Y PHOTOCONDUCTION SPECTRUM 0~ SEMICON-
DUCTORS WYTN A NONHOMQGENEOUS DISTRIBUTION OF IMPURITIES
Moscow IZVESTIYA AKADEMII NAUK SSSR, SERIYA FI2I~'HESKAYA in Russian Vol 42
No 6, 1978 pp 1213-1219
BERMAN, L. V., KAL'FA, A. A. and KOGAN, SH. M.
[From REFEEtATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1B17 by V. F. Dorfman]
[Text] The spectrum of optical absorption by ionized donor molecules in
aemiconductors with sCrong compensation is calculated in the approximation
of a hydrogen-like impurity. A comparison of the theereCical curves with
experimental data pertaining to epitaxial GaAs suggests that the degree af
impurity compensation in f ilms can be qualitatively estimated from the photo-
conduction spectrum and its changes with rising temperature or upon intensi-
f ication. Special features which should characterize a helium-like ~.mpurity
and the conditions for observability of its brightest spectral line are ex-
amined. The model is one of 3solated spherical inclusions with a random
distribution and an enhanced impurity concentration. It is shown that
"dirty" inclusions hardly influence the photoconduction spectrum but appre-
ciably deform the lines in the absorption spectrum. This effect is signif i-
cant even in only slightly nonhomogeneous materials, and it must be accounted
f~r in photoelectric and optical spectroscopy of semiconductors. Figures 2;
ref erences 17. FOR OFFICIti;. USE ONLY
71 ~ ,
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APPROVED FOR RELEASE: 2007/02/48: CIA-RDP82-44850R000100094419-1
~ox o~riciAr. us~ oN~Y ~
uss~ unc 6ai.3is~592
PItODUCTION OF' AMORPHOUS THIN FILMS FOR SWITCH~S WI'~H M~MO~tY
Mo~cnw 5BOEt~1IK NAUCHNYKH TRUDOV PO PR~BLEMAM MIKROEL~KTRONIKI [Scient~fic
Transactions on Problema in Microelectronics, Collec~ion~of ArCicles] in
Ruse3an, Moscow Inatitute of Electronic Eng~.neering No 34, 1977 pp 24-30
CR~UASOV, A. F., UKRATNSKIY, YU. M. and USOV, N. N~
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEY~ PRIMENENIYE No 1, Jan 79
nbstracc xo ~.si44]
(TextJ Thermal and plasma h~gh-frequency aputtering of ehe raw material are
compared wiCh respect to reproducibility of parame~ers which characterize
swiCching devices with memory on the basis of chalcogenous Ge15Teg~As4 glasa,
as well as for the purpose o� find ing the opeimum sputtering procese parame-
ters, References 7.
USSIt UDC 621.373.51
A STUDY OF THE GENERATION OF MICROWAVE OSCILLATIONS AT FREQUENCIES SIGNIFI-
CANTLY GREATER THAN THE DRIFT FREQUENCY BY A GUNN DIODE
2-Y VSES. SIMPOZ. PO MILLIMETROV. I SUBMILLIMETROV. VOLNAM, KHAR'KOV, 1978
TEZ. DOKL. T. 2(2nd All-Union S}nmposium on Millimeter and Submillimeter
Waves, Khar'kov, 1978, Abstracts of Reports, Vol. 2] in Russian, Khar'kov
1978 p 44 ~
,
ALTUKHOV, I. V., KAGAN, M. S., KALASHNIKOV, S. G. and KUKUSHKIN, V. V.
r
[From REFERATIVNYY ZHURNAL RADIOTEKHNIKA No 1, 1979 Abstract No.1D115 by
A. V. Lazarev]
[Text~ A report is presented on excitation of oscillations, the frequency
of wY,ich falls wiChin the millimeter wave band is significantly greater
than the frequency of oscillations in the domain mode and is not a multiple
of this frequency, in a resonant circuit containing a Gunn diode. These
oscillations are not identified with known modes of the Gunn diode. Their ~
development may be explained by the fact that the domains moving in the
diode have negative HF resisCance.
72 �
FOR OFFICIAL USE OVI.Y
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rn~ o~~zcint, usL oNLY
uss~ unc 6aL.373.si
A GUNN CENERATOR OPEREITTNG IN TH~ 60-80 GHz RANGE
2-Y VSES~ SIMPOZ. PO MILLIMETROV. I SUBMILLIMETROV. VOLNAM, KHAR'KOV, 1978
T~2. DOKL. T. 2[2nd All-Un~.on Symposium on M111imeCer and Submillimeter
Waves, Khar'kov, 1978 Abstracra of Reports Vo1. 2] in Ruasian, Khar'kov 1978
pp 16-17
VASIL'~V, N. A., KOSOV, A. S. and STRUKAV, I. A.
[From REFERATIVNYY ZHURNAL 12ADIOTEKHNIKA Nn 1, 1979 AbatracC No 1D177 by
A. V. Lazarev]
[TextJ The deaign is described of a Gunn generator operating in Che 60-80
GHz range with an output power of up to 40 mW and an efficiency of ~1 per-
cenC. The basis of the design is prof iling of a resonator, through whicti
the bias is fed to the diode. By changing the diameter of the radial por-
tion, the active portion of the load can be tranaformed.
USSR UDC 621,382.002
CHARACTERISTICS OF LASER-BEAM SCRIBING
Moscow SBORNIK NAUCHNYKH TRUDOV PO PROBLEMAM MIKROELEKTRONIKI [Scientific
Transactions o:~ Problems in Microelectrun3cs, Collection of Articles] in
Russian, Moscow Institute of ~lectronic Engineering No 34, 1977 pp 77-84
BOCHKIN, 0. I., NIKIFOROVA, S. N. and PARKHACHEVA, YE. V.
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1B650 by V. V. Kopitsyn]
[Text] The process of cutting silicon wafers with a YAG-laser beam is ex~-
amined. A scratch line deeper than 50 um can be cut in one pass, entirely
suff icient for spliCting up to 300 um thick wafers into chips 1.5 um or
larger in size. The cutting speed must be chosen according to the required
scratch depth and the latter, for all practical purposes, depends neither
on the grade of silicon nor on the presence of inetallic, dielectric, or
other coatings. It is desirable to protect the wafer surface with a latex
film against contamination during laser-beam cutting and then to remove this
73
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FOt~ OFFIC~AL US~ dNLY
f:Llm mechanically af~er tiha operaCion, A scrgCch must be m~de aC least 30
um away from IC components on a chip; no deCQrtoration of Cheir character-
istics ghould Chen occur. ~'3gures 2; referencea 6~
USSR UDC 621.382.002
AUTOMATION FEASIBILITY STUDY OF TH~ DE1'OSITION P~tOC~SS PARAMETERS INVOLVYNG
PHOTOFtESISTIV~ FILMS ON FL~XIBLE TAPES
Leningrad POLUPROVODNIKOVYYE USTROYSTVA I TERMOPREOBRA20VATELI [Semicon-
ductor Devices and Thermal Convereers] in Rusaian 1978 pp 73-77
KRASIL'SHCHIKOV, M. YA., LYSENKO, L. A. and MAMAYE~', G. I.
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1B574 by V. I. Brodskiy]
~TextJ A method has been developed �or deposition of photoresistive films
~rom the vapor phase on 200-mm long and 30-mm wide grade FDI-AP polyam3de
tapc. Such a tape was placed in a chemical beaker containing grade FN-11
photoresist. The film thickness was measured wiCh a model MII-4 microinter- ~
ferometer. The qualiCy of specimens was determined under a model MMtJ-3
microscope (x 300 magnification) after etching. Here the dependence of the
built up film thickness and of the thickness nonuniformity on the kinematic
viscosity of Che phoCoresist and on Che velocity of the tape passing through
ehe beaker during the deposition process is shown. It has been established
tha~ the Chickness of the photoresist film does nor appreciably depend on
the tape sloping angle and, with the viscosity correctly matched, remains
wietiin Che required range of 1.5-2.0 um� The thickness nonuniformity does
depend on the tape sloping angle and becomes minimum (under 20 percent) at
angles from 18 to 30�, which is satisfactory for production of microcircuiCs
on carrier tape. Figures 2; references 3.
~ 74
FOk OFFICIAL USE ONLY
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~tllt Ul~i~'ICYAL US ~ ONLY
USSR . UDC 62i.382.ooa
TECHNOLOGICAL pItODL~MS WITH BULKY TERMINALS ~Olt SCMICONDUCTOR DEVICES
Leningrad POLUPROVODNIKOVYYC pRZBORY I TERMOPREOBRAZOVATELI (Semiconductor
Davices and Thermal Convertera~ in Russian 1978 pp 86-90
SAItAYEV, 0. N., KHODAK, I. YA., SHEKHANOVA, M. A~ and ZAKHARYAN, G. 0.
[~rom REF~ItATIVNYY ZHUItNAL, ELEKTItONIKA I YEYE PRIMENENIYE No 1, Jan 79
AbsCract No 1B649 by V~ I. I3rodskiy]
[TexC~ Problems in producing bulky terminals in hybrid circuit integration
are considered. Th~ external nppearance of bulky terminals is shown, afrer
a semiconduceor device hns been connected eo the n~rcuiC bonrd by soldering
wiCh ~ U-turn. IC is also shown that contact taba can be Cinned by el.ectro-
chemical deposition and a small height variation (up to 4 um) between eermi~
nals fr~m hybrid IC component thus attained. The strangth of auch soldered
~oints was checked on a commutator circuit board holding up componenta wiCh
14 bulky terminals 200 um in diameter. Specimens were aleo tested mechani-
cally in shear, the resules revealing a dependence of the mechanical strength
of soldered ~oints with U-turns on the size of this U-turn ae well as on
the heighe and size nonuniformity of solder beads in an assembly of hybrid
IC components. Figures 2; references 3.
USSR UDC 621.382.002
PROPERTIES OF EPOXIDE-SILICONE ORGANIC ADHESIVES AND THF.IR APPLICATION IN
SEMICONDUCTOR DEVICES
Moscow GELIOTEKHNIKA in Russian No 3, 1978 pp 59-61
BAYBAKOVA, N. N., GRIBELYUK, I. I. and DORMIDONTOV, A. A.
[From REFERATIVNYY ZHURNAL, EL~KTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1B638. Summary~
[TextJ The physicomechanical properties of epoxide-silicone organic adhesive
grades K-300-61 and VT-25--200 were studied, as well as Cheir resistance to
organic solvents, water and grade PMS-100 polymethyl-siloxane fluid. The
grade K-300-61 adhesive has been found to be suitable for bonding silicon
wafers into stacks sub~ect to mectianical treatment and heat treatment at
250�C.
75 _
FOR OFFICIr'.,'.. USE ONLY
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FOR OFFICIAL USE ONLY ,
USSR UDC 621.382~002
AN ~~FECTIVE TECHNOLOGY FOIt MOS-LSZ N-Ct~IANNEL DEVICES WZTH SILICON GAT~S
Mosaow SBORNIK NAUCHNYKH TRUDOV PO PROBLEMAM MIKltOELEKTTtONIKI (Scientiific
Traneactions on Problems in MicroQlectronic~, Collection of Articles~ in ,
Itussian, Mogcow Inetitute of Electronic Engineer~ng No 34, 1977 pp 36-39
GArAROV, p. M., SAPRONOV, V. I., SOLOMONENKO, V. I. and FILIpENKO, V. 0.
(~rom REF~RATIVNYY ZHURNAL, ELEKTRONIKA I YEYE P1tIMENENIYE No 1, Jan 79
AbatYact No 18663. Summary)
[Text~ A eechnology has been developed for MOS transiators with n-channels
gnd polycrystalline-Si gaCes~ App].icaeion of thie aelf-matchi.ng technology
and use of high-resiativity substrate material w~Li make it feasible to pro-
duce hi$h-speed devices compatible with TTL circuits in terme of logic ie~~ia.
Th'e very reliable separation beeween levels as well as the proceesea of pre-
cision oxidation, diffusion, epitaxial growth and photol3Chography contri-
buee to the feasibiliCy o� producing LSI circuits with a high degree of in-
tegration (of the order of 20,000 components per chip).
ussx unc 6ai.382.ooa
TECfINOLOGICAL FEATURES OF A COMPOUND STRUCTURE WITH A FIELD-EFFECT TRANSIS-
TOR CONTROLLABLE BY A SCHOTTKY BARRIER
Moscow SBORNIK NAUCHNYKH TRUDOV PO PROBLEMAM MIKROELEKTRONIKI [Scientific
Transactions on Problems in Microelectronics, Collection of Articles] in ~
i'ussian, rioscow InstituCe of Electronic Engineering No 34, 1977 pp 47-55
ADAMOV, YU. F'. and GOLUBEV, A. P.
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79 '
Abstract No 1B662. Summary]
(Text] A structure is described which conCains a bipolar n-p-n transistor
and a field-effect transistor controllable by a Schottky barrier, also a p-
type conduction channel. The results of experimental studies are analyzed
pertaining to some of the technological processes which affect the character-
istics of bipolar and f ield-effect transistors. It is shown that ion-plasn~a
sputtering of tungsten affects the gain of a bipolar transistor in a micro-
circuit configuration.
76
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rUFt Uri~'T.CtAL t18L UNI,Y
1
ussx unc 6a~,saa.a,oii.aaa
STRt1CTUR~5 bASEU ON I.AMCLLAR QaA~ C1tYSTAL5 WITI~ AN S-i~'OTtM CURR~NT-VOLTACE
C11AttACTEItiSTIC
Moscow POLUPROVODNZKOVA TEKHNIKA I MZKROEL~KTRONIKA [SemiconducCor Technolo-
gy and Microelectronica, Republic-wide Ineerdeparementa]. Collection of Arti-
clea~ in Ruesian No 28, 1978 pp 53-56
VAYNBERG, V. V. and VARSHAVA, S. S~
[From REFERATIVNYY ZHURNAL~ EI~rKTRONIKA I YEYE PRIMENCNIYE No 1, Jan 79
AbstracC No 1B271. Summary]
(Text~ The nonhomogeneiry o� 1ame11ar crysCals was atudied by Che method of
first measuring the potenCial distriburion over an obli.que microsecCion and
then the electricnl conduct!.vity during layerwise grinding. Overcompensnted
layers wit:h a high resistivity ~(of the order of 105-106 Uhm.cm) were found
to exisC. Subsequently (p~-p(i-)-n'~) structures with S-form currenC-voltage
characteristics were produced. These atructures were atudied and rhe tempera-
ture dependence of Cheir main paramet~rs found to be linear. Experimental
data are now compared with theoretical calculationa according to the model
of superlong semiconductor diodes on overcompensated aemiconductors. The
length of tihe diffusion path for minority carriers in Che base region of a
semiconductor S-diode as we11 as the ratio of base length to diffusion path
length are then evaluated. Figures 2; references 6.
USSR UDC 621.382.2.011.222
CALCULATING THE THERMAL PERFORMANC~ OF GUNN-EFFECT DIODES
Kishinev K RASCHETU TEPLOVYKH REZHIMOV DIODOV GANNA in Russian, Kishinev
Polytechnic Institute, 1978 18 pp (manuscript deposited at Che Central Sci-
entif ic Research-InstiCute of Technical and Economic Stud~.es of Instrument
Making, Means of Automation and Management Systems 16 Jun 78, No 963 Dep.)
GEORGIU, V. G. and ZAKHAROV, A. A.
[From REFERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1B236 Dep by the authors]
[Text] A method of calculating the thermal steady-state and transient per-
formance of Gunn-effect semiconductor diodes is analyzed in detail. It is
shown how the results of these calculations can be used for optimizing the
design of semiconductor diodes and for measuring the temperature of such
devices during operation. References 11.
77
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FOR OF~'ICTAL US~ ONLY
US5R UDC 621~382.3.002 .
INTCC1tATED T12ANSISTORS WITH METALLIC COLLECTORS
Moacow SBOttNZK NAUCHNYKH TRUDOV PO PROELEMAM MIK1t0ELEKTRONZKT ~5cientific
Transactions on Probl.ems in Microelectronica, coiia~e~on of Articles] ~.n
Ruesian, Moscow InaCitiute of Electronic Engineering, No 34, 1977 pp 40-46
ADAMOV, YU~ I~'., MOSHKIN, V, I~ and FETISOVA, S. N.
[From REFERATIVNYY 2HURNAL � ELEKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
Abstract No 1B661]
(Texr] Results of calcula~iona and experimental studiea are shown pertain-
ing to n-p-tt tranaistora wieh metallic collectors, the lateer having been
produced by ion implanCation in ehe base region.
USSIt UDC 621.382,2:539.213
A NEW KIND OF S'WITCHING IN AMORPHOUS THIN FILMS OF ALUMINUM OXIDE
Kiev UKRAINSKIY FIZICHESKIY ZHURNAL in Ruasian Vol 23 No 7, 1978 pp 1213-
1216
FEDCHUK, A. P. and SALTYNSKAYA, T. F. ,
[Fram REFERATIVNYY ZHURNAL, ELEKTRONIICA I YEYE PRIMENENIYE No 1, Jan 79 ,
Abstract No 1B262. Summary]
[Text] In a study of the current-voltage characteristics of inetal-dielec-
tric-metal structures on the base of aluminum oxide a new kind of switching
has been diacovered which cannot be deacribed by the thermal model, The
characteristics of this switching made have been found to be affected by
the pres~nce of doping H~', K+, Co'}'} and Cd'}"{' ions. For an explanation of
Che abrupt rise in conductivity during switching, a model is now proposed
. according to which the barrier at the contact becomes more transmittant
under the influence of cations drifting along an externally applied electric
field. On the basis of such a model, the switching inertia is determined
by the kind of motion of impurity cations in the amorphous thin f ilm. Fig-
urea 2; references 8.
78
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~ox nrrzczAL us~ ~NL~
U55R UDC 621~382~2:539.213
DEVICES BASED ON AMORPHOUS SEMICONllUCTOR5
Moacow USPEKHI FTZICHESKIKH NAUK in Ruasian Vol 125 No 4, 1978 pp 707-730
ADLER, D.
[From REFERATIVNYY 2HURNAL, ELFKTRONIKA I YEYE PRIMENENIYE No 1, Jan 79
AbstracC No 1B26'7 by V. K. Nikiforov]
[Tex,t] This aurvey summarizes the results of 15 years of research aimed at
cor~structing a theory of amorphous semiconductors and practical application
of the effects found to occur in them, It is emphasized Chat not the peri-
odicity of their structure but the chemical nature and the electron struc-
ture of their constituent atoms provide the key Co undersCanding the proper-
ties of amorphous solids. From this standpoint, then, are examined the
periodic table of the elements, the energy characteristics of various states
in atoms (principally s- and p-states), the modes of bonding and hybridiza-
- Cion, as well as their role in formation of tihe nearest order and a band
structure in a solid. It is shown how the kind of bonds affects the forma-
tion of a complex band structure in amorphous semiconductors and solids.
The phenomena of a mobility limit, Cailing of the states density, a mobili-
ty gap and localization of heteropolar states in amorphous semiconductors
are explained, and the causes of their occurrence are interpreted on the
basis of the "active centers:! model. Prominence is givez~ to achievements
in realization and development of inethods by which amorphous silicon can be
doped for use in several unique novel devices such as a solar battexy with
a 6 percent efficiency. Attention is also paid here to the economic aspects
and to the fact that producing amorphou�3 semiconductors costs less than pro-
ducing crystalline.ones. Known theories of switching are analyzed and the
fact is underlined that, while plain switching is an electronic process,
switching with memory is a result of transition of a material from amorphous
to crystalline state. Data are presented on devices already built.on amor-
phous semiconductors (type "61at/Ovonits" memory with a capacity of 1024
bits. and others), extra-large information recording systems with electron
and Iaser beams, and information display systems. Figures 11; references
5.
79
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FOtt OFFICIAL USL dNLY '
U5S~ UDC 621,396.6-181.48
PARAMETItIC METNOD OF COMPENSATING THE EFF~CTS 0~ RADIATZON ON SEMICONDUCTOR
SW~TCHINC DEVIC~S
Alma Ata V~S7'NIK AKAD~'MII NAUK KAZAKHSKOY 5SR in ituasian No 7~ 1978 pp y4-75
_ mUYNtBAYEV, A. A,
(Frnm 1t~FERATIVNYY ZHURNAL, ELEKTRONIKA I YEYE P~tINENENiYE No l, Jan 79
AbsCract No 18319 by D. I. Rubinshteyn~
[Texe~ A method of compensaCing the ef�ect of radiation on tiransiseor
switche;~ is dpscr:tbed. ICs gist is to compensate the decrease of the ba~e-
c~~rrenC tranafer ratio due ro irradiation of the transistor by a s~multane-
ous increase o� Che ~ollector load rQSiatance. Application of th3s method
throughout Che enttre range of inciderir integral radiaeion �luxes will opti-
mize the energy characteristics of integrated circuite and increasa their
radiation r~sisCance.
~
80
~ F'OR OFFICIA:. USE ONLY _
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rox ni=r~r,~AL usL drtLY
Ttieo~y
USS~ UDC 621.3'll
i'R~QU~NCY TRANSI~'ORMATInN IN pA~L~CTItICS
2-OY V5~5, SIM~'OZ. PO MTLL~M~~'I~(7V~ ~ SUBMILLIt~t~TROV. VOLNAM. K~A~'KOV
1978 ~.n ~ua~ian Abseraees o� ~eporti~ Volume 2, Khar'kov 1978 pp 38-39
GI2ABOVSKYY, YU. Y~., KOSH~VAYA, S~ V. and OM~L'CK~NKO, M~ YU.
(~rom R~~CItATIVNYY ZHU~NAL RADIOT~KHNIKA No 1, 19)9 Abstract No lA3'7 by
L. S. Subbotin]
(TextJ In the case of non~ineo.r, 4-wave inCernce3on of tiraveling electro-
magnetic wnves in a paraelectric, ~ocated in a permanent elecCric field,
th~ phenomena of p~rameeric amplification nnd frequency conv~rsion occur
simultaneous].y. Therefo~::, these phenomentt cannot be ~eparaeely analyzed,
and they can be c~lcurated nnly by the use of compuCers. The results pre-
seneed from such caLculations were obtained for ~ryst~Le of strontium Cita-
nate, cooled Co liquid-nitrogen Cemperatures, at a pumping frequency of 50
GHz, for a signal with a frequency of 5 GHz~ In order to suppress the upper
side band, additinnal electrodynamic attenuation is introduced at 130 dB�cm,
gnd the signgl is parameCrically amplified ~y 29 dB~ AC the same time, ef-
f ective transformation Co LF is achieved, using the energy of the pumping
wave. Figures 2; references 1.
81
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FOR O~I~'ICIAi~ USC ONLY
Publicatiions
Alit TEtA~~IC CONT[tOL COMMUNICATIONS, 1tAUZ0-~tADAIt SUPpORT 5ERVICES
Moacow SP[u1VOCHNIK p0 SVYAZZ I RADIOT~KHNICHESKOMU OB~SPECHENIYU POLETOV
(Manual on Communications and Radio~echnical Support of Flighr OperaCions)
in Ru~qian 1979 signed eo press 29 SepC 78 pp 2, 285-286
[Annotnrian and eable o� coneeries from book by Yu. Z. Dukhon, N. N.
I1'yinskiy, and G. I. Laushev, Voyenizdat, 17,500 copies, 286 pages)
(Texr~ ~his manual contains material on orgah.izing air traffic control
communications and radio-radar support services, meChods of performing
th~se services, characCeristics and fundamentals of operation of communica-
tions and radio-radar supporC services equipmenC.
This manual can be uCilized by officers, warrant officers and noncom-
missioned officers of aviation unit communications and radio-radar support
services, as well as civil aviation specialists involved in uCilizaCion
and aperation of communicaCions and radio-radar support facitities.
It can ~lso be of use to commanders, staff officers and military air traffic
controllers in their practical activities pertaining to organization of con-
trol of aircrafC in the air and air operaCions safety.
ConCenCs Page
Part I. General Discussion of Air Traffic Control
Communications and Itadio-Radar 5upport Serivices .
Chapter 1. Basic Definitions and Demands oa Conununications and
Radio-Radar Support Services 3
1.1. Basic Definitions in Communications and Radio-Radar
Support Services 3
1.2. Demands on Communications and Radio-Radar Suppnrt Services 7
1.3. Types of Communications 13
Chaptc~r 2. Modes of Communications 14
2.1. rlodes of Radio Communications 14
2.2. Modes of Radio Relay and Wire Communications 20
_ 2.3. Modes of Signal Communications 27
82
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1
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FOli n~FZC~AL U9E ONLY
Chnp~~r 3. hindc;~ nE Air Tr~ffic Conr~o~ it~dio-~~dar Suppor~
S~rviceg 2$
~.1. Mnd~q of Ai,r Traffic Conernl Radnr SupporC Serviceg 28
3.2. Air 7'r~ffic Conerol ttadio ~nd Li~hti Signal Support Serviae~ 32
3.3. Scleceinn o~ Po~itions fnr DeploymenC of ~tadio-Radar Sup-
pnre F'deiliei~~ 36
Yare II~ Air Traff3c CnnCrol Communicati~.ons and Itgdio-
R~dar SupporG Services Cquipment
Ch~pe~r 4. n~scrip~ion of Radio Communicaeiong and ttadio-~adar
Supporr Service~ ~quipment 39
4.1. parameter~ Chdracterizing 'Technic~l Cap~biliCies o� Radio
Communicaeions and ttadio-Radar SupporC Services Equipment 39
4.2. Pttr~meCerg Ch~racCerizing Tactiical Capabilities of Radio
Communication~ ~quipmenC 35
G.3. par~m~eers CharacCerizing Tactiical C~pabiliCies of RMdar
~quipmene 59
4.4. paramererg and Indices Characterizing Tactical Capabili-
ties of Radio Navigation ~quipment 68
4.5. Description of Illuminaeion ~quipment 80
ChapCer 5. Influence of ~he Atmosphere on Operation of Radio Com-
munications and Radio-Radar SupporC Services EquipmenC 82
5.1. Spectrum of Electromagnetic Oscillations 82
5.2. Structure of Che Atmosphere and TCs Influence on Propaga-
tion of Radio Waves $3
5.3. Influence of the ~'eatures of Propagation of Radio Waves
of Various Bands on AccomplishmenC of Radio-Radar Air Traffic
ConCrol SupporC Tasks 85
5.4. Physical Properties of Radio Waves and Their Influence on
UtilizaCion for Air Traffic ConCrol Communications and Radio-
Radar 5upport Services
Chapter 6. Influence of Climatic Conditions on Efficiency of Com-
munications and Radio-Radar. Support Services Equipment 109
6.1. Influence of ~Climatic Conditions on Operational Reliability
of Radio Equipment During Flight 109
6.2. Effect of MoisCure on Radio Components 115
6.3. Effect of. Neat and Cold on Radio Components 116
6.4. Effect of Corrosion on Radio Components 120
6.5. Intluence of the Biological EnvironmenC, Light, Dust, Sand
and Conditions of Aging of Materials on Radio Components 126
6.6. Effect of Mechanical Loads on Operation of Communications
and Radio-Radar Support Services Equipment 128
83
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~'OEt OFF]:CIAL USh dNI,Y
t~nrC Zt"L. ~'und~m~ntalg of Sarvic3ng and Ma~.nCenanc~
of Air Traf~~.c ConCrol Communic~t~.on~ and Radio-Radar
Suppo~C Servir.e~ i:ryuipmen~
Cl~~~nt~r 7. Principle~ of Servic~.ng and Mnl.ntenancc of Commun3ca-
tiong and Rndio-Raciar Support 5ervic~s ~qu~.pmenC 13~.
7.1. Subseance and Cont~nC of 5e~vic~.ng and Ms~nC~nance of
Commun~.caCions ~nd Itadio-It~dar Suppo~C Sarviceg ~quipment 131
7.2, S~rvicing of Communicae3.ons and R~din-Itadar Suppore Ser-
V~.C~q Cquipmene During r1~~hC O~er~t3nns 138
7.3. Pueeing Communicat3ons and Itadio-Itadar Support Sa:~:ices
~quipmettti InCo Operation 140
7.4. Methods of Trouble-Shootiing CommunicaC~ons and Rndio-Radar
Support~Services ~quipment 142
7.5. Orggniz~eion of itepair of Communications and Radio-Radar
Support Services ~quipment 144
7.6. 5Cnra~e of Communicaeions and ttadio-Radar Suppore Ser-
vices Equipmene 144
7.7. 5ervicing of Radio Communica~ions and Radio-Radar Sup-
port Services ~quipmenC by Che Calendar-Parame~ric Meehod 145
7.8. Estimating the Operating Condition of CommunicaCions and
Radio-Radar Support Services Equipment 154
7.9. Safety Measures in Servicing and MainCenance of Com-
munications and R~dio-itadar Support Services ~quipmenC 155
Chapter 8. F:lectrical rieasurements Emp].oyed in CommunicaCions and
Radio-Radar 5upport Services Equipmeut 162
8.1. I'rincipal Data on Metrological Support in Signal and
Radiotechnical Support UniCs 162
8.2. Measuremenr_ Errors 164
8.3. Technical Standards and Measurement of Principal Para-
meters of Communications and Radio-Radar Support Services
Equipment 166
8.4. Metrological Expert Appraisal of C~mmunications and
Radio-Radar Support 5ervices Equipment 189
ChapCer 9. Reliability of CommunicaCions and Radio-Radar Support
Services Equipment ].93
9.1. Quantitative Characteristics of Re13.ability 193
9.2. Redundancy in Communications and Radio-Radar Support
Services Equipmenr 206 ~
Part IV. Operation of Air Traffic Control Communi-
cations and Radio-Radar Support Services
Equipment Under Conditions of Radio In-
terference and Jamming
Chapter 10. Protection of Communications and Radio-Radar Support
Services Equipment Against Radio Interference and
Jamming 218
84
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10.1. ~~ctory n~e~rmining Yroraceion of Communicati~.ons nnd Rad~.o-
[tadar SupporC Services ~quipmenC Aga~.nsti Itad~.o InteYferenc~
and Jamming 2~.8
10.2. MeChodg of i~rotecCing Itadio Communication~ ~quipmenC
Agn:tnst R~dio InterEerence and Jamm~ng 220
L0.3. Methods of protecting nadio-Radnr Support Servic~s
Cquipmenr Ag~inst ttadio tnterference and Jamming 224 ~
10.4. M~rhod of ~srimatiin~ ~he Influence of Radio Zneerference _
~nd Jamming on Opcration of Communicarions ~nd Radio-Rgdar
Suppnrt 5ervices ~qu3pment 239
Chxprer 11. ~lectrom~gneric Compatibility of ltadio ~leceronic
rquipmenr 248
11.1. Ceneral InEormation nn C1ec~romagnetiic CompaCibiliCy
r~f itadin Cl~ctrottic ~quipmenC
11.2. Merhod of ~sCimgting ~1ecCromagnetiic Compatibility nf
Itadio ~lectronic ~quipmenti 252
11.3.
Appendices
1. Communicat3ons and Radio-Itadar 5upport Services Symbols 262
2. Some Universal ConsCanCs 273
3. Some Dates ~rom the History of DevelopmenC and Utilization
of Communications and Radio-Radar Support Services ~quip-
ment 276
Biblio~raphy 279
Subject Tndex 280
~81GG /1796-3024]
COPYRIGHT: Voyenizdat, 1979
~
END
~
~5
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