JPRS ID: 8247 TRANSLATIONS ON USSR SCIENCE AND TECHNOLOGY PHYSICAL SCIENCES AND TECHNOLOGY

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TRANSLATI~NS ON USS R SCIENCE AND TECHNOLOGY -
PNYSICAL SCIENCES AND TECHNOLOGY
(FOUO 6/19)
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BIBLIOGRAPNIC CAl'A ~eport Ne. JPRS L/ 8247 Z ~ecipient's Aeee~sidn Nn.
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, u e rn ~u eit e epon ue
~RANSLATIUN5 ON USSR SCIENCE AND TECHNOLOGY - PHYSYCAL . 29 January 1979 _
SCI~NCE5 AND TECHNOLOGY, (FOUO 6/79) 6.
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The report cnntains S,nfa~^~ation on aeronautics; astronomy and astrophysics'
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~ JPILS L/8247
29 January 1~179 -
TRANSLATIONS ON USS~ SCIE~JCE AND TECHNOLOGY
PHYSICAL SCIENCES AND TECHNOLOGY ~
_ (FOVO 6/79) ~
CONTENTS PAGE
ELECTRONICS AND ELECTRICAL F�NGTNEERINC
The R,eeonance Array and Its Application to the Aesign of ~
- Solfd-SCate Microwave Devices
(I. V. Lebedev, V. G. A].ybin; IWZ RADIOELEKTRONIKA,
Oct 78) 1
Estimating the Propertiee of Periodic Structures for
Multibeam Microwave Devices
(F. F. Dubrovka, et al.; IWZ RADIOELEKTRONIKA,
~C. t , ~ � � ~ � � ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ o ~ ~ ~ ~ ~ ~ �
GEOPNYSICS, ASTRONO~lY AND SPACE
Experimental Imrestigation of Oscillations of a Free
Surface Induced by Tnternal Waves
(I. S. Dolina, et al.; IZ'VESTIYA AKADEMII NAUK SSSR,
FIZIKA ATMOSFERY I OKF.ANA, No 11, 1978) 19 -
- Intemal Waves Generated by Local Perturbations in a 1`~0-
Layer Stratif ied Fluid . ~
(I. V. Sturova; IZVESTIYA AKADE~III NAITIC SSSR~ FIZIKA _
ATMOSFERY I OKEANA, No 11, 1978) 24
SCIENTISTS AND SCIENTIFIC ORGAIIIZATIONS
Vsevolod Vladiairovich Fedynskiy (Obituary) _
(ASTRONOMTCHESKIY VESTNIK, No 4, 1978) 34
PUBLICATIONS
The 'EPOS`.Electroaic Calculator
(ELF.~TRONIKA EPOS (POSOBIYA DLYA RABOTNIKOV
MASHINOSt~ETIQYKH BYUItO), 1978)......s 37
- a- [III - USSR - 23 S& T FOUO]
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CONT~NTS (Continued) Page
~ Roll Welding of Bimetals
(SVARKA PROKATKOY BTriETALLOV, 1977) 42
_ Corroaion of StrucCural Materials in Molten Alkaline
Metals ,
(KORROZIYA KONSTRUKTSIONNYKH HAT~RTALOV V ZHIDKIKH
SHCHELOCffiJY1Qi METAI.LOV, 1977 ) . . . . . . . . . . . . . . . . . . . . . . . 47
Table of Contents Prom .Iournal 'EXPLORATORY GEOPHYSICSf
(RAZVEDOCSNAYA GEOF~2TKA, No 79, 1977) 51
- `
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ELECTRONICS AND ELECTFtTCAL ENGINEERING
UDC 621.373.51; 621.372.837.4
THE RESONANCE ARRAX AND ITS APPLICATION TO THE DESIGN OF SOLID-STATE MICRO-
WAVE DEVTCES
Kiev IWZ RADIOELEKTRONIKA in Rusa~an Vol 21 No 10, Oct 78 pp 24-31
_ [Article by I.V. Lebedev aad V.G. Alybin, manuscript received 23 Nov 77J
[TexC] A new variant of a waveguide-rod sCructure is
described, which possessea parallel and series resonances
- and provides for the efficient connection of ~ large
- number of semiconducCor oscillator, swiCching or rec-
. . tifier diodes. A design example of a multidiode micro- -
. wave switch and limiter is treated, _
Introduction -
_ In the ma~ority of modern waveguide oscillatora, amplifiers, switchers and -
limiters, the microwav~ diode is positioned transverse to the waveguide,
parallel to the electrical field vector, or inserted in a break in the inner _
conductor of the coaxial line, and coupled to the waveguide in one fashion
or anoCher [1 - 4]. Waveguide detector heads, phase shifters, modulators,
atCenuators and other microwav~ devices using discrete solid state devices .
also have a similar structural design. The development of these designs is -
now taking the approach of not so much the synthesis of fundamentally new
- systems, as much as the path of analyzing and refining the parameters of the
equivalent circuitry and improving the charac.teristics of the devices on this
- basis (5, 6~. In searching for new design solutions, there is a apecial
need for multidiode microwave devices, which attract attention in connection
with the problem of boosting the workign power. In the ma3ority of cases,
it is necessary to use s~litters and bridges [7] in multidiode devices, some- _
= thing which leads to an increase in the size and weight, Qa- it is necessary
to employ power addition using the principle of active diaphragms [8~, same-
, thing which does not provid~e for the requisite heat sinking and is inadequate-
ly effective. A new variant of a waveguide-rod resonance structure is des-
_ cribed in Che fbllowing, which provides for the insertion of a large number -
of microwave diodes, where this structure do~s not have the drawbacks indi-
cated. The electrodynamic properties of this system are of independent inter-
est, and in a number of cases, permit a significant improvement in the micru-
wave parameters and characteristics of the diode devices.
- 1
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The Resonance Array in n~tectangular Waveguide `
To illuatrate the devices and Che operati.onal principle of Ctie multidiode
strucCure being described here, we sha11 initially ~urn to the conventional -
resonance meCal diaphragm (window) in a waveguide with a recCangular cross-
secCion using the H1 mode. Such a diaphragm (Figure la) can be deacribed
with suff icient prec~sion by an equivalenC circuit in the form of a parallel
resonant circuit, which sht~nCs tihe main Cransmission line, as shown in Fig-
ure lb. The bandwidth ~:haracteristic o� Che loases induced L by the window
(Figure lc) has a minf.~um at a frequency fp, which corresponds Co parallel _
reeonance and the practically compleee passage of the aignal ehrough the
waveguide. The quantity fp, as is we11 known, dependa on Che relationship
of Che dimensiona of the window ~ and b', and the cro~s-sectional dimensiona
of the waveguide a and b. -
a L
_ ~ -
a a (b)~ o f -
Figure 1. A resonance diaphragm in a rectangular waveguide (a), its equiva-
- lent circuit (b) and the shape of the bandwidth characterieCic (c). -
l w l �
- L' L j '
I
_ _ ~ -
I
- L' ~ -
a 6 1 nqp 6 noc~2~
Figure 2. A diaphragm with four aupplemental apertures (a) and its equivalent -
circuit and response with the parallel and series resonancea (b, c).
Key: 1. f0 parallel~
2� f0 series� ~
We shall consider how the frequency response varies, which is shown in Figure ~
lc, where there are four supplemental openings of length Z1, which are depic-
ted in Fibure 2a, pscesent in the plate of the diaphragm. If the dimeneion
Z1 amounta to less than half of the free space wavelength, then each of the ~
supplemental openings has an inductive conduct~vity. The equivalent circuit
of the diaphragm takes oa the form shown in Figure 2b, where L' are the equi- '
valent ind~ict~:ces, determined by the dimensi~ns of the supplemental slots
- and the width of the conducting strip tu between them. ~1s a result, there -
arises a second resonance at a frequency of f~ Seriesr which no longer is -
_ of the parallel type", but is rather a series resonance (Figure 2c). This '
resonance, which corresponds to blocking of the waveguide, should be posi-
tianed at the higher frequency end with respect to the main parallel reso- ;
nance f0 par~ since the condition of series resonance of the main aperture
2
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ot rhe cli~ptiru~m wiCh rhe inductnnce of Clte ~upplemental nperture is tihe
_ capacitive nnture oE rhe impedance of Che main opening.
_ It is noC difficult to experimentally check ehe conclu~ions drawn here, by _
- using a panoramic SWR meter Co observe both ~ttenuations of Che broadband
response of plane me~~l diaphragms which have f~.xed dimensions of the main ~
opening Z and b~, and different dimensions of Che supplemental openinge. -
The frequ~ncy f0 pAr p',~'acCically does not change in ~his case, but tihe seriea
resonance freqaency f0 series ~s controlled wi~hin a broad range and approaches
_ the frequency f0 par from the high �requency side wiCh an increase in Che
- d~nenaion tu.
In making a transition to the insertion of aemiconductor diodes, ~ust as in
vacuum tube microwave electronics, iC is necessary to take the approach of
organically incorporaCing them into resonance strucCure. From this point of
view, the diodes can be poaitioned in breaks in any of the conductors, which -
form the structure depicxed in Figure 2a. However, Che insertion of diodes
in a break in the conductors, parallel ro the electrical field vector in the
waveguide, and which have a width w, is less expedient than in a break in
the conductors parallel Co the wide walls of the waveguide. This distinction
~ is manifest particularly sharply when designing coatrolling class devices,
~ for which the first of Che variants cited here proves Co be unacceptable~
: Thus, the insertion of diodes in a microwave sCructure can have the form
shown in Figure 3a. Four oscillator, switching or rectifier diodes prove to
- be connected in pairs through the narrow walls of the waveguide. The con-
' ductors which are the extension of the diodes can have Che shape of rods,
i.n the center of which metal pins are positioned, which are coupled to the
wide walls of Che waveguide. The dimenaion which determines the par.a].lel
resonance frequency, can differ in the general case from the wide sectional
dimension of the waveguide a.
1 2. d l 2 3
~
~ -
B B
~
/ !
a a
_ a ~ 6
Figure 3. The connection~of 4 and 8 semiconductor diodes:
1. Rods; _
2. Pins;
3. Diodes.
The set of inetal rods which are postioned parallel to the wide wall of the
� waveguide, with the diodes connected at their ends, .1nd the metal pins, which
connect the rods to the nearest wide walls of thp wa~?eguide, which possesses
both parallel and series resonances, can bel alled a resonance array. In
3 .
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- fnllawin~ the principl~ described here, one can create noC nnly 4-diode, buC
also 8-diude, 12-diode, lfi-diode, etc. arrays. In particular, an 8-diode
_ r.esonance ~array (Figure 3b) corresponde Co ~he inieial dual s1oC reson~nce -
= window with eight supp].emental openings, or what is the same thing, with
ewo 4-diod~ r~sunar.ce arrays in a waveguide of half the height, b/2, with
_ respect to Che plnne nf ~ymmetry BB. The increase in the number of diodes
is primrcrily I.~nited by Che narrow crosa-sectional dimenaion of the waveguide
and Che sizes of tihe diode packages. To further Ghe number of diodes, one
can take the approac?l of using unpackaged diodes or waveguides witih a non-
srandard crosa-aecCion with an increased height, including multicnode wave-
guides.
The minimum possib].e number of diodes, inserted using the principle described
ttere, is two. Such a configuration correaponds to a symmetrical division of -
the 4-diode array in ac~aveguide of twice the heighC of the conduching plane, -
arranged on analogy wiCh the AA plane in Pigure 3a, which can be poaitioned
' between two rods of a waveguide parallel to the wide wa11, as shown by the
dashed and dotted line in F~.gure 3a;
A general feature of the arrays treated in [9] is the positioning of the axes
~ of the diodea and the rods connecCed to them perpendicular Co Che lines of
Che electrical field in Che waveguide. It is not difficult to see that wiCh
such a configuration, the rods with the diodes prove to be decouQled with
- zes~pect to the H~,p mode ~ield. The part of the dev3.ces exciting the rods i.s
played by the pins, which connect the center taps of the rod to Che opposite
wide walls of the waveguide, or when the number of diodes is more than four,
- which connect the centers of the center rods in pairs. The same pins perpen- ~
dicular to the wide walls of the waveguide are used to feed the suplly vol-
tages in the case of osc311ator and controlled diodes, or to complete the
direct current circuit for the diodes in limiters and rectifiers.
. The Equivalent Circuit of the Array
The direct utilization of the equaivalent circuit depicted in Figura 2b i~ ~
calculations encounters difficulties in view of Che fact that the length of ~
the rods is commensurate with a half wavelength and there is a atronly pro-
nounced variation in the field over the length of the rods. We shall ini- _
tially neglect the influence of the conducting planes (the wide walls of the
waveguide) and the inhomogeneities produced by the diode packages. Then each ~
pair of rods can be represented in the form of a symmetrical two-wire line, ~
which is excited out of phase in the center with the pins as shnwn in Fiugre
4a. The characteristic impedance Zc1 of this line is determined by the cross-
sectional dimensions of the rods and the spacing between them.
TreaCing the rods as a T mode two-wire line is facilated by the above men-
tioned absence of coupling between the field of the rod line and the field of
the Hlp wave in the waveguide. -
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� ti 7'he characCeristic impedance nf the -
~ line inro which the array is cornecCed -
~I Z I ~ I9 ia d,~signaCed as Z~ in Figure 4a, i.e.,
the equiva~.ent impedance of Che main -
~ I~, L jq, Zg ~ Z9 waveguide Ze, where Z is Che CoCal -
_ , k~ ~C Z~ length of Che roda between Che end -
� faces of the metal pro~ection, includ-
" Ic2 � zci ing the leng~h of the diodea. The
' Cotal impedance of one diode ia desig-
nated as 2d.
,.~A) ~ b . (B~ �b
Figure 4. Tha equivalent circuiCs The impedances of each pair of diodea,
of a mulCid~.ode, resonance connected aC the end of the e~:T~-wire
array. line, proved to be connected in series
with respecr to the high frequency,
although with respecC Co direct current, ~
Cheae diodes can have a parallel configuraCion. We will note Chat the series
_ RF connection of the diodes is here achieved automatically without the phys- -
_ ical superposCion of semiconductor strucCures and withou~ degradin~ the con- -
ditions for heat removal From each of Che diodes. The overall capacitance of
each pair of diodes proves to be half the real capacitance o� one diode, a
, circumstance which plays an important part and is an additional advantage of
a resonance array over hitherto existing diode heads.
~ A further refinement of the equivalent circuit is shown in Figure 4b, where
_ sections of conductor Cype lines above the conducting plane are taken into
account, where they are formed by the rods and the wide walls of the wave-
guide close to them. Taking these lines into 3ccount, which have a charac- -
teristic impedance of Zc2, is ~ustified for the case of sm~all spacings be-
tween the rods anc wide walls of the waveguides (see below).
Depending on the purpose of the device in which the resonance array is em- -
ployed, one or both of the resonances shown in Figure 2c can be used. In
this respect, a typical case is that of a switching resonance array, for -
which it is necessary to realize two operational modes: that of blocking
and passing the signal in the main waveguide channel in the same pasaband.
A Multidiode Switcher and Limiter
We shall use the equivalent circuit shown in Figure 4a, and we shall treat
the switching and limiCing diodes only in Cwo limiting staCes. Tn the first
state, which corresponds to direct current flow through the diode, 2d 0.
In the second state (high impedance), the quantity Zd is primarily determined
, by the capACitance of the diode C. Then, in the microwave signal cutoff
mode, i.e., in the radar transmft mode, in the case of the "forward" cir-
_ cuit of the switcher, the ingut impedance of the array at the points ab in
Figure 4 proves to be equal to -
za~~=1N~4njL -'t' 2~~ tg ~~1~=~Xaar ~2)
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- where L is Che inductance of the pin; c is ehe apeed of light ir. free
~ ep~ce und N ia Che number rod pairs.
Tn view af Che purely reactive nature o� the impedance 2ab~, the decoupling
which is provided in the signal cutoff mode amounta to:
Z a -
Ldecoupl3.ng � Lp�s = lOlg f 1-}-(~~ 1 1. (3~
L \ ~a / J
A decoupling max9.mum ia achieved at the ser3.es resonance frequency fp series
_ when Xgbl m 0, from which:
tg nfo n~ ~ _ _ 8nto ~ L (4 ) -
c � ~
Zoi
In Che microwave signal passage mode taking into account the series connection
- of the diode capacitances in pairs, we obtain the input impedance of the array
with respect to the points ab in Figure 4a:
~f l 1 ~
Z Z~~ t6 ~
- Zaaa� 1N 4nfL 2' . ~ nfl =1X~s� ~5~
Z~~ -I- njC tg ~ .
The subscripts 1 and 2 in expresaions (2) -(5) and the following correspond
- to the blocking and passage modes respectively, i.e., to the radar transmit ;
and receive modes. ,
The losses introduced on receive, LinCro~ are determined by expression (3)
where Xab2 is substituted for Xabl� zn the appzoximation adopted here (wi.th-
out taking the active losses into account), the quantity Lintro should be ;
equal to zero at the parallel resonance frequency f~ p8r, for which Xab2 = .
Taking (5) into account, we obtain
tan (nf0 seriesZ~c) = nf0 seri.es ~Zci ~6~ ~
The condition for ncrmal operation of the awitcher and 13miter 3s the colo-
cation of the frequencies fp a and fQ series at a specified center fre-
quenay f~. From this, using ~(5~ and (6), one can deCermine the requ3site -
inductnnce L of the pins which connect Che rods to the wide walls of the ~
waveguide z ;
L _ CZe~
_ 8 ' (7) ~
,
As can be seen from (7), with a decrease in the diode capacitance C or the
chnracteristic impedance of the rod line Z~1, it is necessary to reduce the ,
inductance of the pin L. For this purpose, for example, one can make use of -
the reduction in the pacisting length of the pins by means of choke cylinders,
introduced inCo the waveguide [10]. The evaluation based on equation (7) '
_ shows that for typical values of C= 0.5 1 pF and Zc1 = 100 150 ohms,
. 6 ~ '
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' t~ori c~t~rrc;rnr, u;~~; nNi,Y -
the qugnCt,Cy L~hould f~ll in a ran~e of 0.6 2.8 nHy. The len~th Z nf
Che roda which provides for the spec~.fied value of Fp can be found by rnenns -
of (6);
nfo arctg(-nfuCZ~i~� ~g)
The quant~.ty Z always provea Co be anmewhat greaer than half of the reaonance
wav~~.engCh in free space, equal to ~p = c/fp. With a decrease in the capaci-
~ tattce, the length Z should be increased, a maximum where C+ 0, Z+ J~. The
_ length Z can be boCh somewhat amaller and somewhaC g~eaCer than the wide di-
menaion n� r.he waveguide aection a, aince usually a~(0.7 0.8)~.
In practice, it is convenient to position the diodes in paira on metal inserta, ~
as ehown schemarically in Figure 3.
The choice of the characteriatic impedance o� Che rod line Z~~ requires special
- attention. An increase in 2~1 following the corresponding correction of the
quantities L and Z while observing fp = consC., leada to an expansion of the
bandwidth in the receive (passage) mode and simulCaneously to a narrowing of
- the bandwidCh in ~he transmit (signal blocking) mode. Tt usually necessary to -
_ specify,the minimum permissible amount of decoupling in the transmit mode, -
. L10~ at the edges of the band and the maximum permissible amount of introc!.uced _
losses L20. Typi~al values of Llp and L20 are 15 20 dB and 0.5 1.G dB ,
respectively. Assuming the indicated values of Llp and L20, one ca:~ solve the
two transcenaental equations for Ldec � L10 and Lintro � L20 by means of equa- -
_ tions of type (3). Th~ roots of these equations which are closest to the fre- ~
quency fp yield the boundary frequencies of the resul*.ant passband in the re- ~
ceive mode Af2 and the bandwidth in the transmit mode ~fl. -
�r,l-'- �Ir �J
nj, Figure 5. Th~ bandwidth in the two operational
Mrk ~~Sn�' modes as a funct3on of the character~
,'~0 N'~ istic :Umpedance of rod lines for ~
~s~ N= 4-diode and 20-diode switchers and
nj? limiters: -
- 61S ~
C=QSn~A a = 28.5 mm; -
~o ~ c=QS~m b= 12 . 6 mm; `
0,75 C�l,Onm �~F Llp = 20 dB;
!,0 &ss ~0 0,75 L20 � ~�5 dB.
~~0 60 90~ J20 I~,,OM
Pubns
The kypical depedence of the bandwidth ~fl and Qf2 on th~ characteristic impe-
dance Z~1 is shown"in Figure S for three values of diode capacitance C in
the centimeter band for the case of 4-diode (N = 1) and 20-diode (N = 5) arrays.
: The intersection of the ~fl and ~f2 curves yields the quantity Z~1, which �
satisfies not only the above mentioned colocation of the frequencies
f0 series = f0 par - f0~ but also the.c~~ncidence (equality) of the bandwidth
_ . 7
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I
~nx n~~ic~~ us~ oNLY
i.n both working mode~: Afl ~ ~f~*. Ag c~n b~ geen from the ~igure~ with g
- decreai~+e ;3,~, diode c~paciCgnc~ or wtth an increas~ in the number of rnds in
th~ arrny;~ ~nd corre~pc~nrlingly tlie nwul~er of diodes~ a notable expansion of
- th~ working bandwidth ie ~chieved. Th~ r~qui~ite quaatiCy ~c1 in this c~~e
d~~re~geg with an incre~ge tn N.
~ 1n~'~ 2 a6 t 8b ~'igure 6. Th~ b~nrl Charact~rSstics of Che ~
s"�~~ decoupling of ehe introduced logs~~
_ 7~pn~6 and diesipated pnwer for ~ 4-diode
switching array:
~ 1' a ~ 28.5 mm;
r b ~ 12.6 mm;
_ ?0 2 Itd1 ~ 2 ohm~;
Itd2 ~ 0.3 ohms;
� C � 0.5 p~. -
i0 p Key: 1. pdies~pinc~ P~rcent;
- �f p - s�1/1c~ 2. Ldecoupling~ d$?
3. LinCroo dB. _
~nother important imprnvement in the characterietics of switches and limiters
is also gchieved vith an increase in the number of diodes: a reduction in the
~lectr~.ca1 load Which is characeerized by the power dissipated in oae diode,
and a sharp increase in the maximum power of the incident wave. The calcu-
letion of the electrical load can be carried out using the same equivalent
circuit (~igure 4s), taking into accouat the finite ~mount of resistance of
the diode Rdl. A typical veriatioa ia the power Pdis~ dissipated in one diode,
referenced to the power of the incident wave, P~~, is shor~+a in Figure 6 for
a 4-diode array. Also derived there are the calculated baadwidth character-
- istics of the introduced losses and decnupling, Caking into account the finite
valuea of the diode resiatancea in the traa~it mode Itdl and ia the receive
mode RdZ. As can be seen from tr?ese curves, the maximum of the diss~pated
power can fall outside the range of the workiag bPndvidth on the low frequency
side. -
The Influence of the Naveguide Walls
A more precise equivalent cirucit, which is depicted in Figure 4b, permits
taking into accou~~?t the influence of the s+ide walls of the waveguide on the {
characteristics and parameters of the resonance array in a fireC approximation=
The input impedance of the switching or limiting arrgy at points ab ie des-
cribed by the geaeral equ~tion in this case:
Due to the small asyimnetry in the baadwidth characterietics, there exists
- a certain divergence of the boucidery'frequencies in the traasmit and receive
modes, evea vhea Qfl ~ ~f2. This divergeace caa aeglected in a first approx-
imatiou.
8
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zA-f-1 z~' tg !'2njGZ~s ~Za /z,z: t~ ) (g)
2 x2'- c~ - .
~ zA ~ zd ~ ~ ~~.s . ~t~ j2nfL (Z~i -f- iZA) Z (ZA~!-IZ~s tg
\
Here zC~ ig the ch~?ract~rigeic imp~dance of the cvnducCnr type lin~ abnvc
ground~ whtch i~ formed by Ch~ wide wall o~ the waveguide and th~ ~rray rod
which ig close~t eo iC.
- I3y ~g~in ~pplytng the cottdiCion for the co~.ocaeion of ttie decoupling mgximum ~
in the tranemit mode nnd the minimwn of Che introduced loeses in the receive
mode, one can derive en expregsinn whtch determinea Che requiaite inductance
of ~ pin: CZ~~
L~ ~
4 (2 -1- (lU)
~ ze:
- When ZCZ (10) trgn~forms inCo (7). The lengCh of ehe rods in the approx-
im~Cion cnneidered here ie, as before, deCermined by expression (8).
Calculationg ~how th~t the influence of line secCions with a charac~eriatic
impedance of Z~Z have the most pronounced effect on the amount of the power
disaipated in the diodea~ and on the frequency chargcteristics of the entire
grray in the transmit mnde. It is interesting to note that the frequency
response of the power disaipaCed in the diode, with a reduction in the isuped-
ance zc2, can cease to be a decayinR value with an increase in frequency. The
rise in the poWer disaipaCed in the diodes at the high frequency edge of the
band is due to the parallel resonance between the inductance of the pine and
the input impedance af the cnnductor-above-ground type line. There is simul-
taneously a certnin narrowing of the bandWidth of the array in the transmiC _
mode.
~he influence of the sections of lines of the conductor above a conducting
- plane type is also manifesC in aaother fashion. The difference in the induc-
Cences of the pins, perpendicular to the wide walls of Che waveguide, has
extremely little effect on the band response characteristica of decoupling
and introduced losses, but at small values of Zc2, leads to imbalance in the
electrical load of the diodes, cnnnected at the ends of the different rods.
For thia reasvn, vhen aligning an array by means of moving choke devicea,
vhich provide for a variation in the frequency f0 series� it is desirable to
monitor the symmetry of the electrical load, which can be accomp~ished in
practice by a number of inethods. The possibility of adjusting and monitoring
the poaer dissipated by the diodes permits compensating for the scatter in
the production parameters of the diodes and in the array as a whole.
Conclusiou
The analysie and design of other applications of a resor,ant array can be
carried out in a similar manner: for cases of pwer additioii for o~cillators
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and gmplifi~r~ uei~?g IMrATT diodee and Gunn dindes~ a~ well as for the ca~e of
~uleidind~ microw~ve r~cCifiers~ eCc. A number of questione of the operaCion =
of ~uch d~vic~e ig of ind~pendent inCer~~C.
BIBLIOGIZAPNY
1. ~isenhart R.L., "UndereCending the Waveguide Diode Mount"~ I~E~ GM':: InC. _
Microwave Symp., Arlington Heighta~ Dig. Techn. Pap.~ N.Y.~ 1972, 1954.
2. Lebedev I.V.~ "Nekotoryye problemy gazorazryadnykh i tverdotel~nykh SVCh
_ pereklyuchaCeley" ["Some Problems n� Gae Discharge and Solid State Micro-
wave SwiCchers'~], TZV. VtJZOV - ItADIOELEKTRONIKA [PROCE~DYNGS OF THE HIGHER
EDUCATIONAL IN5TTTU2ES - ItADIO EL~CTRONIC5], 1973~ 16, No 10, p 41. -
3. Liberman L.5., 5eeCroreCskiy B.V., Shpirt V.A., Yakuben~ L.M.,
"PoluprovodnLkovyye diody dlya upravleniya moshchnost~yu" ("Semiconductor ,
Diodes for Power Control"], RADIOTEKHNIKA [ItADIO ENGINEERING], 1972, 27,
No5, p9.
4. Kurokawa K., "The Single-Cavity Multiple Diode Oscillator", ISEL TRAN~.,
1971, MTT-19, No 10, p 793.
5. Williamson A.G.~ OCto D.V., "Analysis of a Waveguide Mounting Structure",
PI~~E, 1973~ 34, No 3, p 95.
6. Bugayev V.Ya., Rapoport G.N., "Ekvivalentnaya ekhema volnovodno-icoakei~tl~nogo
T-sochleneniya" ["Aa Equivalent Circuit of a Waveguide to Coaxial T-Coupliag"J,
_ IZV. WZOV - RAnIOELEKTRONIKA, 1977, 20, No 2, p 95.
7. Kuno H.T., Eaglisch D.L., "MillimeterWave I1~lPATT Prn+er Aaplifier Combiner", .
I~EE TRANS.~ 1976, MTT-24, No 11, p 758. -
8. Hefni I.E., "Micras+ave Semiconductor Device Mouat", US Patent, C1. 333-83,
No 345 2305~ Claim 28 Feb 67, published 24 Jua 69. -
9. Lebedev Z.V~, Alybin V.G., "Ustroystvo slozheniya moahchnostey -
sverkhvysokochastotnykh priborov" ["Micrrn+ave Device Power Cambiner"]~ f
Patent No 566297, BYULLETEN' I7ABRETENIY (BULLETIN OF IANENTIONS~, 1977, t
No 27. ~
10. Baker T.H.S., "Semiconductor Diode Waveguide Svitch", ELECTRONIC TECHIJOLOCY, .
1961, 38, No 8, p 30U.
10
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11. Leb~d~v I.V., Alybin V.G., Aghk~n~xi U.Y~., g~Ly~yev V.P., "Mnghchnyy
mnogndiodnyy volndvodnyy pereklyuch~tel ("A High Pow~r Multidiod~
Waveguide ~witch"J~ ~L~KT1tONNAYA T~KNNtKA (~L~CTItONIC ~NCINE~~tING~~
;:~+riya 1~ ~LEKTRONIKA SVCh (MICROWAV~ ~L~CTKONICS~, 19~7~ No 9.
COpYItIGHT: "Izvestiya vuzov SSSit - RadioelekCronika," 197g
8225
- CSQ:1870
.
11 ~
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EL~CT.RONICS AND EI.ECTRICAL ENGINEEAING
UDC 621.372.825.4
E5TIMATING THL PROPERTILS OF P~RIODIC STRUCTURE5 FOR MULTIBEAM MICROWAVE
DEVtCES
Kiev IVUZ ttAnIO~L~KTIt~NIKA in ituseian Vo1 21 No 10, OcC 78 pp 90-95
[ArCicle by P.~. Uubrovica, V.I. Ngydenko and A.A. 5akaloeh, manuscript re-
ceived 25 Nov 77J
[Text] 2he expediency of using a~hain of coupled ring
reaonators in multib~am, type 0 microwav~ devic~s ie
demonstrated. The concept of a generalized coupling im-
pedance is introduced, bae~d on Which the properties of
retarding ayatema are evaluaCed for the type taheXe a chain
of ring reaonators and a chain of inductively coupled re-
sonators are used as the etructures for multibeam micro-
vave devices.
The refinement of radio engineering equipment requires the deaign of high pover,
type 0 micro~+ave devices Which have low po~rer supply voltages voltages. One
of the promiaing approaches to the solution of this problem is that of going
over to multibeam devices, in ahich by virtue of increasing the interaction
regioa in the transverse direction, one can boost the perveance by teas of times,
and thereby, obtain the requiaite po~?er levels at comparatively lov voltag~s.
Of all of the well-kaown retarding systems, a chain of inductively coupled
resnnators, ahich is called a stopped raaveguide in the following~ has become
Widespread in high paver type 0 devices. This is due to its outstanding
electrodynamic, production technology and thermal charaaterietics. It is only
ngtural that a stopped Waveguide wae used by the designers of multibeam de- '
vices. The properties of other periodic structures s~ere not invest,lgated as `
applicable to their use ia multibeam devices. ;
It ia expedient to use a chain of coupled riag reaonators as the retardiag
system for multibeam type 0 micro~+ave devices, ahere the ceatral rod ia this
chain, ahich shorts out the diaphragm atopa, d~splaces the longitudiaal elec-
trical field from the ceatral region to the peripheral region, and thereby
increaaes the region of effective interaction of the field irith the electron
f lovs.
12
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_ De~cribed below gre Che properei~~ of fieldg in chgin o� cuupled ring re-
gnnator~. A cnmpgrieon is made on tlie bngig nf the introduced concept of a
g~ner~lix~d eoupling imp~dgnce beCween the propertie~ of thig gCruCture and
of a~topped wav~~uid~ from the vi~Wpoinr of th~ir gpplication in multibeam
- typ~ 0 microwave devicea.
It i~ Well known [1, 2j ehgL� with ~ phg~e ghift ehrough e period, 0~ Che
propertieg of rergrdtng sy~Cem~ nf the cn~pled resonatnr chain typ~ become
cloeer Co the properti~~ o� g gy~Cem df uncdupled r~gdnaeors Che smgller the
thickne~s of Che sCnpe (for the cgse uf z~ro thi~kn~ss of Che eCops, Che cut-
_ off wavelength J? corregponding Co ~ e 0, ie preciecly equgl to th~ resonance
vavelength of the uncoupled resonarors). ~or Chis reaeon, a gaod initial
~pproximation for field~ clase Co m~ 0 will be the fielde of an iedlated
resonator. ~'or a ring resanaCor wieh gn outer Cylinder radiue of b and an
inner radius of Che (cent~r, coaxial) metal rod c, Che longitudinal elec-
trical fielde, where Che number of variaL�ione in azimuth ie m~ ere repre-
- aent~d in the form (3]:
Es ~ A [!M (kr) N,~ (k6) - J,� (kb) N,� (kr)J sin ~n~,
Hm ~ - A ~
k~ (!u) N,~ (k6) - (kb) N;~ (kr] sin m~,
(1)
H. ~ A~~~~ NM (kb) ~M NM cos m~p.
here J~ (x), Nm (x), Jm (x) and Nm (x) are m order Bessel functions of the
first and ~econd kind and their derivativee ~rith respect to the argum~nt x;
k' 2n/11 ig the wave number.
Formulas (1) represent a field which has no variations along the axis of the
resonator. _
The resonance frequencies of the P.~~ modes of a ring resonator are found ae
the roota of the equation
~~I N~ ~kb~ - !M 1~~ ~M ~k~) _ ~ 2 ~
We wtll note that the fields of a stopped aaveguide with infinitely thin
diaphragm stops vhere 0 differ from the fields of (1) by the substitution
of the Bessel function Jm(kr) (or Jm(kr) for the H gubscript ~ component)
for the expresaions in the square brackets, ~+hile the resonance frequencies
are found as the roots of the equation
J~, (kb) ~ 0. C3, -
The distributions of the electrical field Ez and the magnetic field ~ in-
tensit3es over the radius for differeat ratias of the inner and outer con-
ductor radii c/b are given in Figure la, b. The solid lines show the diatri-
bution of the fields in a system vithout an inner conductor (c/b = 0), the
dashed lines are for a syetem With c/b = 0.02, and the d~ahed and dotted linea
13
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are for n syeCem with c/b ~ 0.4. The number of variatinns nf the �ields
over the azimuth m gmnunC~d Co 0.1 ~r~d 7. (the corrpepottdi.ng numbers an ~
Ch~ curv~~). _
A~ cen be seen from ~igure 1, the intrnduction of ~ center conductor exerte
th~ grpaeest influence on the gximuChally homogeneous field~ (m m 0); ~tiCh
~n increas~ in m, the influence n� Che nenter conduator fall~ off. Wi h
gn increase in the rgdiu~ of Ch~ cettter conductor c, the max3mum of the
field ~z is shifted into the region nf greater values of r/b~ and the dis-
tributions of the fields wiCh different vglues of m come closer Cogether. _
The digtribution over ~he radius of Che difference in the densitiee of the
mggneeic and elecCrical energy uIH~I2 ' E~Ez~2 a ~W is ahc~wn in Figure 2. _
The pgrametera c/b and m~nd the deaignations of Che curvee are Che eame "
as in Figure 1. Aa can be eeen from Figure 2, with the intr~duction of a
rod ~W ef the azimutt~lly homogeneoua type of oacillationa changes the moat ~
- sharply: when c/b = 0, the electrica field energy ia concentrated in the re-
gion of small valuee of r/b; when c/b ~ 0, the energy of thf m~gnetic field
ig concentraCed in the same region. Figure 2, in particular, determines the
- re~iona which are expedienCly used to realize n~agnetic coupling between Che
resonators. For exgmple, when c/b = Q, it is expedient to cut the coupling
slots in the diaphragm stops in the region of ratios of r/b of 0.6 1 for
m~ 0; 0.77 1 for m= 1~ and 0.83 1 for m a 2. '
Where a center conductor i:s present, there are two regiona in vhich the mag- '
n~tic field energy predominatea. Thig p~rmits magneCic coupling not only in -
the p~ripheral part of the ring reaonator, but also in the central part.
The more sharply the fields vary, the more atrongly the resonance wavelength
J1 changes, ~omething which is evidenced by the curves shown in Figure 3.
Here, the ratio of the wavelength corresponding to 0 to the diameter of
the outer conductor 2b is plotted along the ordinate. The interaection With
the ordinate axis marks the point corresponding to 1? of a stopped Waveguide.
It can be geen that with an increase in c, the 8ystem becomes ewen more ~
short wave and the curves corresponding to varioua values of m come cloaer :
together. This complicates the elimination of interfering modes, something
vhich should be taken into account when using such systems in electronic
deviceg.
One of the main quantitieg vhich is used the moat frequently as the charac- ~
teristic of retarding eystems ia the coupling ~mpedance n of the spatial =
harmonic Which interacts ~+ith the electron floa [l, 2J.
E
R~ a ~Z �
n
Hoxever, it turns out that the quaatity R~ is an incomplete characteristic
for a retarding eystem, especially in the case where it is uaed in multibeam
devices. In fact, one of the main electrical parameters in the theory of
type 0 devices is the Pearce gain parameter [4J C=(RQI/4U)1~3, and is
14 `
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0
- ~ t. ~
O,d - 8Hy ~Er
/ / � ? ~ , ~ i U~ T~ `
~ ~ ~ p ~ ' / ~I I
0,6 ~ ~ 2 6 I
%
~ ~ ~ 2 I~ 0
0 4 ~
U,r Q4 0,6 O,Q r/6 ,
N~ ' ~'`~1 I , -
~ ~ , : -
~o ~
n~ ~~~.04
~ ~ n.~~~ ; ~6i o,~ r~e
\.t~ 4. ~ � , ~
o ~
QT e r ~
V`~ D
~
a b
Figure 1. Figure 2.
~ is determined not only by the coupling resistance Rn of the working epatial
harmonic, buC also by ~he current I and the vdltage U of the beam. Ne-
glecting relativietic effecCs, U~ nn2 [4~, where nn is the delay of~the
n-th Working spatial harmonic. Taking thie coupling into a~count, it is
- clear that the prop~rties of a retarding syetem are more completely charac-
terized by the parameter Rnnn. The beam current I e jkSk a~~S~ is limited
in the cathode region by the emission current density from the cathode jk
and the area of the cathode 5k, while in the interaction region, the current
density in the channel of the ayetem j~ and the area of the channel cross-
section 5~ is limited by the power engineering capabilitie~ of the electron-
optical system. It is kno~rn that the greater S~ is, the less the coupling
resistance Rn is. Thus, the parameeer Which most completely characterizes
the system at a specified Wavelength from the power engineering viewpoint is
the product Rnnnlc,n, where icn is the ratio of the area occupied by the beam
to any characteristic area. We will note that for a more precise analysis,
it aoul:. be necessary to include in the channel area also the area in Which
the longitudinal Electrical field interacting with the beam is concentrated,
i.e., also include the area occupied by the connecting aleeves in the cross-
- secional area of the chgnnel S,~. However, the cr~ss-sectional area of the
- channel is usuall,y considerably greater than the area taken up by the coupling
sleeves, and it is sufficient to just consider S~.
Further, the band properties of the retarding system are characterized by the
group velociey v~P (vgrj or by the grour ~ielay n~P ![ngr] = c/vgr (Where c
is the velocity of light in a vacuum~, and the greater ngr, the greater Rn,
the ~maller the vorking bandwidth of the device.
15
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11 /26 -
- Thus, we arrive ar g generalized coupling resietance,
~ a parameCer rahich most completely characterizes a\
_ O,d ~ reearding sysC~in: ~ `
- R ,
Q~ n~p n^k~'~ ~4 )
a az o,c u~
which in ehe ineernational gyseem nf uniCg has the ~
~i~ure 3. dimensions of ohms.
W~ will noCe Chat parameter (4), in contrasC to Rn, also charaCterizes the
syatema at the edgea of the pasaband! and in particular, iC is also auiCed as
g characteriatic of resonators, wh~.1e Itn at rhe eclges of the passband for any
system tends tn Moreover, the quantiti~a measured in Che ~compleCely
~ matched modc (the atanding waves) are spec.tfically proporeional to (Rn/ngr)nn�
Thia also makes parameter (4) conveni~nt in experimentel sCudies of. retard- ~
ing systems.
By returning Co a sysCem of a chain of coupled ring reaonatora, we find
~o ns = 30 8 IE~I~
~
nro ~ kb~~ ~ I Nm (kb~ I s~ b IZ~ H~~~~ ~5~ '
where dID ~ 1 when m e 0 and dm = 2 when m# 0; ~(kb) and H~(kc) are the
- values of the iia, component of the magnetic field 1) when r Q b and r n c;
kb [kc s kb (c/b)j is determined from equation (2). Taken into account in -
(5) i$ the coupling P= vgrW/L, where W ie the energy atored over a period
of the syst~m L.
Im the ri ht hand aide of (5), ~EZ~2 depends on r aad and for thia reason,
(Rp/ngr)n~ is also a function of r and Specifically, one can choose such
velues of r and ~ that ~EZ~is either maximum or ~EZ~ is avera ed over the
cross-section of the beam. Given below are values of (R~/ngr)n~ at the point
tahere ~ EZ ~ has a maximwn.
The results of calculating (~p/ngr)na as a function of c/b for m s 0 are
shown in Figure 4 by the solid l~i.ne. When c/b ~ 0, the quantity (R~/ngr)np :
= 38.5 oh~s. With an increase in the diameter of the inner r~onductor,
(R~/n$r)np falls off. Fo~ example, When c/b a 0.1, (Rp/ngr)n~ ~ 12.2 ohas,
i.e., it has fallen off to practically a third of its f~rmer value. But with -
the introduction of an inner conductor, as seen in Figure 1, the area which '
can be occupied by the beam is changed substantially. In other worda, a con- !
siderably greater current I can be introduced in a system ~ith a central t
inner conductor. For this reason, it is also necessary to take into aCCOUnt ~
the area coefficient k.rt. '
The efficient o~eration of multibeam devices can be achieved Where alllof the
beams are located in an RF Eield of close intensity.
The level of the permissible variation in the electric field intensity is de- ~
termined by the area which can be occupied by the beam. For example, as
16 ~
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~p~tKn ~ t
j~p
~t '
_ _ _ Y Q~ ~ -
roo - - - - i
~4 ~
JU _
JO ' ' " = 31 _
~p `2 "2
1
~~0,01 Ql c/6 sd Q2 0,4 c/6
Figure 4. Figure 5.
- follows from Figure 1, if verrical line ~Ex~2 is taken ar the 0.81 level
(i.e., ~EZ~ aC a level of 0.9), then the area which can be occupied by the
beam in a BysCem W~.Ch c/b ~ 0 amounCa to abouC 6.5% of the cross-sectional _
area of the system. If we limiC ouraelvea to the same level of variation in _
~Ez~2, but uae a syaCem with a center inner conductor with c/b = d.l, then
the area which can be occupied by the beam will be 9.6 Cimes greater (the
diameter 2b increases, as can be aeen from Figure 3, by 1.37 times for the
. case of a conatant J~).
, For a comparative estimate of a stopped waveguide and a system of a chain of
coupled ring reaonators, the parameter lcn is determined from the formula
where Sa~c/b>0 is the area which can be occupied by the beam if a drop in
~Ez~2 down to a level of a is permitted in the chain of coupled ring reson-
ators, and ~~c/b=0 is the same, but in a stoppPd waveguide.
- The results of calculating R~nalcn/ngr for azimuthally hamogeneous fields ia
shown in Figure 4 by the dashed lines, where curve 2 corresponda to an a of
0.16; 3 correaponde to a level of 0.25; 4 corresponds to a level of 0.49;
5 to a level of 0.81 and 6 to a level of 0.9. As can be een from Figure 4,
. with an increase in c/b and the level a, the quantity ROn~icn/ngr inc:.�eases,
reaching a level of about 150 ohms. We will note that this same quantity
Rpn~k,R/ngr for a system without a center conductor (icn m 1) is equal to 38.5
ohms. Tfius, or the permissible level of reduction in ~E2~2 = 0.81, the
parameter Ran~k,rt/n8r of a system with a center conductor is three to four
times greater than the same parameter of a stopped waveguide.
These same curves for azimuthally inhomogeneous oscillations where m a 1 and
m a 2 are shown in Figure 5(the designations are the same as in Figure 4).
Wit~ an increase in c/b, the quantity Rpn~/ngr falls off, while the quantity
Ran k.rt/ngr remains approximately constant for both m= 1 and for m e 2.
The comparison given here for the properties of systems where a chain of
coupled ring resonators and a~topped waveguide are used applies to a phase
17
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shifC of 0. NumeYOUa~ experimental inveatigationa carried out on varioua
reC~rding sy~tema h~ve shown that: the quantiry ltpn~j/n$r, taken at Che sur�ace ~
nf the transit channel, in Ch~ firee plgc~, v~ries comparatively weakly in the
passband, and in Ch~ ~econd place, something which is eapecia~.ly important, -
wiCh ~ change in the geometry of the gyetem is ahifCed pracCically para11e1
ro itself. This permiCg the extenaion o� Che res~les nbtained Co the ent~.re
paeaband, as well as a comparieon of different syseema in the passband which
have ehe requiaite informatiott only at one pnine in ehe passband, for ex-
- ample, at th.a po3.nt 0, as was done above. Consequently, it is obvious
that it ie expedient to make pracCicnl uae of the introduced genralized
coupl3ng resistgnce, a quanCiCy which moat completely characterizea a retard-
ing sygCem. :
Thus, this paper has studied the propertiea of fields in a chain of coupled -
ring r~sonators where ~ m 0. The concept of a generalized coupling reais-
tance ha~ been introduced, and it has been shown that this quantity most com-
pletely characterizes Che retarding aystem of multibeam devices. A compari-
son of the properCiea of a chain of coupled ring resonators and a stopped
waveguide was made uaing Che indicated quanCity; it was demonsCrated that a ~
chain o� ring reaonators ia to be prefered for tyrpe 0 multibeam microwave
devices.
BIBLIOGRAPHY
1. Taranenko Z.I., Trokhimenko Ya.K., "Zamedlyayushchiye sistemy" ["Inter-
active Systema"~, Kiev, Tekhnika Publishers, 1965. -
2. Silin R.A., Sazonov V.P., "Zamedlyayushchiye sistemy" ["Interactive
Systems"), Moscow, SoveCskoye Radio Publishera, 1966. '
3. Nikol'skiy V.V., "Elektrodinamika i raeprostraneneiye radiovoln" [~'Radio
Wave Electrodynamics and Propagation"], Moscow, Nauka Publishers, 1973.
4. Gayduk V.I., Palatov K.I., Petrov D.M., "Fizicheskiye oenovy elektroniki
SVCh" ["The Physical Principles of Microwave Electronics"~, Moscow,
Sovetskoye Radio Publishera, 1971.
;
~
1
COPYRIGHT: "Izvestiya vuzov SSSR - Radioelektronika," 1978 '
. 8225
CSa:1870
~ 18 ~
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GEOPHYSICS, ASTRONOMY AND SPACE
UDC 551.466.8
~XE'ERIMENTAL INVES'rIGATION OF OSCILLATIONS OF A FREE SURFACE INDUCED _
UY INTEItNAL WAVES
Moacow IZVESTIYA AKADEMII NAUK SSSR, FIZIKA ATMOSFERY I OKEANA in Rusaian
voi i4, rro ii, 1978 pp 1216-izie
- [Article by I. 5. Dolinn, S. A. Yermakov, V. V. Papko and Ye. N. Pelinov-
skiy, InstiCute o~ Applied Physica, U3SR Academy of Sciences, submitCed
for publication 21 July 1977]
(Text] As is we11 known, internal wavea in ehe ocean attain their maximum
~mplitudes in layers with ~he greaCest densiCy gradienCs. At Che ocean sur-
face the amplitudes of the internal wavea are small (usually about several
centimeters) and they are uaually neglected [1]. ~Iowever, as a reaule of
increase in the accuracy of ineasurements of waves at the surface ita dis- -
placemenCs from in[ernal wave$ can be registered. Surface oscillations
caused by internal waves lead, for exa~cple, to oscillationa of ice which
were measured under natural conditions and which at least theoretically can
serve as an indicator of internal waves [2, 3J. The influence of internal
waves on surface displacements can also be of def inite interest in an in-
vestigation of the apectrum of surface waves in the low-frequency range
(frequencies of about 10'2-10-4 s`1), since internal waves evidently con- ~
stitute one of the important sourcea of its formation. The theory of the
spectra of sur�ace waves induced by ~nternal waves was examined in [4].
'fhis communication is devoted to an experimental investigation of perturba-
tions of the free surface of a sCratified fluid caused by Che internal
waves propagating in it. The theoretical analyais is based on linear ap-
proximation formulas. As n result of an experimental investigation it was
� demonstrated that the dependence of sutface displacement on wave frequency -
is described well by the formulas of linear theory, even after the appear-
~nce of nonlinear di~tortions of the wave form.
, Surface perturbations from internal waves are determined (in the linear
theory) by the structure of the normal mode, being a solution of the prob-
lem [1J -
d=iT'/ds=+(t~-=1Vs(s)-!)k~WlO (1)
I9
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- [~qug~ion (1) ia written in the Bouasinesq approximation.] wi~h the boun-
- dary conditiona: at the free aurface
TV+(c~~/Bkz)dW/d:m0, z~0, (2) ; _
at the ocean floor I
;
w��0, :�-9. ( 3 )
Elere W(z) is Che eigenfunction for ~he vertical velocity component; N(z)
is the V~is~1~ frequency; H is~ocean depth; 4S and k are frequency and
the horizontal wave number. ~quat~ona (1)-(3) describe both surface and ~
_ internal wavea. Surface waves with any N(z) have maximum diaplacements at
the surface. The skrucCure of the internal waves is essentially dependent
on Che N(z) profile. The maximum waCer 1eve1 diaplacements in internal
waves are atCained at some horizona: however, near th~ surface the dis- ;
= placemenCs are sma11 so that frequ~ently the boundary condition (2) is
replaced by the eimpler approximate'"lid" condition. ;
W-0, :-0, ~2a~
~
thereby excluding surface oscillations. Nevertheless, W(z), computed us-
ing (2a), can be employed for approximate compuCation of aurface displa~ce-
ment (or vertical velocity) by meana of equation (2), relating the sma11
value W(z = 0) with the significant value dW/dz ~z ~ 0; the latter is ;
found from a solution uf problem (2a). Such an algorithm for finding W ~
(z a 0) is convenient for numerical computations since problem (2a) can
be solved with a leaser accuracy, but for a shorter time; than problem :
~2~~ i
Now we will cite the expressions uaed below, which are easily derived from '
(1)-(3), for displacement of the free aurface ~ surf~ related to the maxi-
mum amplitude for the internal wave ~ m, for two stratification models. -
In a three-layer model with a linearly stratified middle layer (with the
V~isala frequency N)
~ C= ' (4 )
~ ~ - gk ( -1 ~ h f (ch kh) a + ( - i ~ (th kh) s ~ , ~
\ L \
i
in a two-layer model (density drop L1P ) ~
[ n= surf ] ep i eh kh ah k(g-h~ ~5~
P k eh kN ~ ;
where h is in both cases the depth of the upper homogeneous layer. ;
The dependences (4) and (5) for the mentioned stratification models were -
checked experimentally.
20
~
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~ P,t/cn~3 $ ~m3 ~,~p= -
-rt~T? ~asur~f/~m
i i
~ ~ i x o
~ ~ ~ ' -
_ , i 3 Z
I r
x
� I ~ o
!p x ,7 � o -
! 04 ~
1 2 ' n5 ~
i
~ ~ " ~is ~ is ~ sec'1
: 2 . ~ ~
- ~
20 ,
Ztfd QCS 0~1 J,15 k~m
~
Fig. 2 Fig. 4
W~~ ~ se~~1 '
- x ~
Z
.
~ -
.
~x
2 4 6 8 !0 kH
Fig. 3
Fig. 2. Dependence of fluid density p on depth z; 1) three-layer model with
linearly stratified middle layer; 2) two-layer model
Fig. 3. Theoretical and experimental dispersion curve for three-layer
' nodel. -
Fig. 4. q'heoretical de endences and results of ineasurements of relative
- surface displacement ~surf~ ~m on frequency ~1 of internal caave (1
three-layer model, 2-- two-layer model; points 3-- slopes k,~ ~^-0.05,
4-- k~ m^' 0.1, 5-- k~ m N 0.15) ; b) on s teepness kt m of internal wave
- (T~ 6 sec, three-layer model). _
21
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~
~Ok tl~~ICIAL U5~ dNLY
- In ordcr to cr~rry out th~ ~exp~rimene we u~~d n plagtic flum~ (3 x n.5 x U.2
_ m). A yrable atr~tific~tir,n wn~ creaCed by inCrdduCing ~~1t aoluttdn~ of
different density intn tltr~ flume. internal wave~ were exciC~d by g wgvp-
~en~rator, huving th~ Cnnfigur~tion df g wedg~ gnd driven into motion by
~i motc~r with nn ndjuytnble rnte of rotgtion. In nrder tn vi~ualSzp int~rn~l
waves in ~ region with a maximum denetty gradi~nt w~ inert~du~~d g~olor~d
luyc~r nf fluid with ~ thickne~~ U.5-1 cm; howevpr~ wh~n wnrking with g
twa-lc?yer model we col~red the entire upp~er hmm~gpnenu~ 1ny~r (Fig. 1). Th~
~mplitud~~ of the internal weves ~abnut a centimeCer) nnd th~ir lpngeh~
were men~ured using c~ genle grid plotted an th~ frant w~ll of th~ b~th.
tti'~ note that similgr methndg for pxCieing nnd m~~auring int~rnal wgveg
_ within a fluid hgve been repeatedly d~gcrib~d in thh lit~rgeure (fnr ~x-
.~mple, se~ [5]). However, no sCudy hge bp~n ro~de nf ehe gurfnc~ p~rturba~
tion~ nasociated With int~rnal waves.
In order tn mensur~ durface waveg we fabricnee~ g~ngor~ in eh~ form of inet~1
,~lute~ situated direCtly ebnve et~~ wae~r gurf~c~. The CApgCLLEit1Cp between
the ~lnte ~nd the water aurface was ehe grn? of g bridg~ circuiC ~upplied
- current from an acousCic frequency genezgtor. The gigngl fed from the
bridge diagonal, after gmpllficaCion, wae fed to an osaillograph and en
automatic recorder. The minimum aurface displacementg mpasured by the
sensor were 10 �.m. -
There wn~ al~o gimultaneous registry of the eigngle from tvo spaced spneore
on an aueomatic recorder; thie made it p~esible~ ueing the phase differ-
_ ence~ to measure the lengthe of the eurface w~ves. 2'he latter i~ neces-
~ary ict order to prove that Che Waves experimentally observed at the eur-
face correspnnd to an internal aave (end are not a auxface mode with the
same frequenCy). -
In the experiment Che amplitudes of the internal aaves vari~d in the range
0.5-1.5 cm, the wave length varied from 15 cm to a meter~ the steepneas
fro~ 10'1 to 5�10'3. In this case the amplitudes at the surface vere about
0.05-0.1 mm.
Below we give the measure~ent resulte~ for two Cypea of stratification; a
three-layer model aith a linearly stratified middle layer (N ~ 2.6 s`1)
~nd a model of a two-luyer fluid (~p/P~0.06) (Fig. 2). Figure 3, for a
three-layer model, ehous the dependence of Wave frequency ~.Jat the fluid
surface on the Wave aumber k(dashed curve) ascertaiaed experimentally
using capacitive-type aensors. It can be 8een that the experimeatal points
agree well vith the theoreCical dispersion curve cs(k) for an internal aave
of a lower mode~ constructed uaing the known formulas of linear theory [6J~
'Che experimental dependences of the relaCive emplitude of the interaal ~
wave at the surface ~ suYf~s m on its frequency for tvo models are ahovn
in Fig. 4,a. Por both models there is a good agreement of experimental
and theoretical curves (4), (S). It should be noCed that With a vave
22 .
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~OEt U~~ICIAL U5~ hNLY
~te~pnp~g nf ~bdut 0.1 eh~ u~v~e ennftgurntinn differg gppr~~iably frmm ~
~ine ~urv~. ~'h~ ~b~erved digCdrtinng nf configur~rinn nf thp in~~rngl
- wave~ ~re ~it~ilgr tn tho~~ dp~Cribpd in ~he rel~tive di~plgc~n~nt
~f thp gurface r~m~in~d virtu~lly th~ ~gm~ ~g in ~ linp~r cgee (~ig. 4~b).
7'hu~, Ch~ exprarim~ne~l rp~u1C~ ~it~d gbnve ~h~nw Chgt t' me~gurpd ~urf~c~
p~rturl~atinng rr~rre~pond to internal Wgve~ in ~ gtr~tiified fluid gnd ar~
d~~c~ibed w~ll by th~ linear theory fnrmul~~.
BtBI.~UCISAPI~Y
1. phillipg, 0. M., DINAMIKA V~[tKN~t~GO 5LOYA OK~ANA (Uyngmic~ nf th~ Upper
Lny~r di the Oce~n), "Mir," 196q.
2. 5mircinv, V. N.~ "Ice Cdv~r Oecilletton~ Cauaed by Int~rnal Ngv~e in -
eh~ ArctiC Oc~an~" DOKLADY AN 5S5tt (Rep~rt~ of eh~ USSR A~~demy o�
Scienc~~)~ 206, Nn S~ 1972.
~gnrndgkfy, V. V., et A1.~ "S1r~W dcpgn W~ve~," ~ 5"Y~2U 5UV~T5KItW
nK~ANnLOGdV, TEZI5Y WKLAI~UV (t?irgt Cc>ngrege nf 5oviee Oceanningigte~
5uam~rie~ of Repdrts) ~ Mc~ecov, Junp 1977.
- 4� Y~rmgkc~v, S. A., pelinov~kiy~ Ye. N., "On the Th~ory of Low-~requency
5urfgee W~veg Induced by Internal NSV~g in the Ocean," IZV. AN S33R~
~AO (Neve of the U55it Academy of Science~, Phy~ics of the Atmoephere
and Ocean), 12, Nn 3, 1976.
5. Thorpe, S. A.~ "On the Shape of Progreegive Internal Wavee," PHIL.
TRArfS. ROY. SOC. LONDON, AZ63, No 1145, 1968.
6. Monin, A. 5. , K,ameakovich, V. H. , KorC, V. C. , IZM~tCHIVO5T' t~tIttOVOCO
01t~ANA (Variability of the World Ocean), Cidrometeoisdat, 1974.
COPYRICHT: Izdatel~stvo "Nauka," "Isvestiya AN SS5R, Fisika atmoafery i
okeana," 1978
5303
CSO: 1870 -
23
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~
_ ~Ok Ut~'~tC1AL U5~ C~NLY ~
~C~OPHY5tC5 ~ A5T1tONOMY AND SPAC~ ,
UDC 551.46b.81
INT~YtNAt. WAV~S C~N~tsAT~D gY LOCAL P~R'CUR~A'~ION5 tN A 2'~~0-LAY~It STRATIFI~b 1
t~'LUIb
rb~cow IzVL5TIYA AKADEMII NAUK S55It~ FIZIKA ATMOSI~RY r OK~AtdA in ltue~ian -
~ Vol 14, No 11~ 1978 pp 1.222-1228
(Articl~ by I. V. SCurova, NydrodyngmiCg IngtituCe, Sibprign Uivi~ion US5R
Ac:aderoy nf 5Gience~, eubmitred f~r publicaeton 1 Nov~mb~r 1977J ~
['Ceztj At th~ present time Ch~ ~uChor~ of (1-3~ hav~ ittv~~Cig~ted eh~ in-
ternal waveg nrieing wh~n a gubm~rged inflaW and outf~ow of equal inten-
gity are eurrounded by a uniform flow and when there is collepee of a '
"gpot" of pnrCially or compleCely mixed fluid, fdr ts+o epecial mnd~ls
of d~neity etratification of e fluid: 1) for a constant Brent~Vaieala fre-
quency N and 2) in the caee of a thin thermocline in which N differs from
xero only in a narrow zone. A limiting case of the latter model ie a two-
l~yer fluid vith a deneity ~ump betw~en homogeneous layers (4J.
In thig peper We e~tamine the m~re general case of density stratification
of a fluid in which the density distribution in an unperturbed aC~te hag
the form (the y-axie ie dtrected verCically upwgrd)
i {-gty=ti{+ ? i
- ~ ~ .
' ~ ~:Y
f~ rt
I ' �
A~-~ s~.~ viiy..4'"_ t , _
s
_ ~7,'
~ ' ~
s.~. .
i
The construction of the Elektronika Epoa machine includes (figure 5,1.)
board 1-- the output dispiay device, board 2-� the input key device;
casc 3 and cover 4. On board 1 are mounted four large integrated circuit
circuits (seriea K145 microcircuits), a BPZ power po~rer unit in the form ~
of a separate device, an IV-18 di~aplay, K2LN641 keys for controlling the -
anodes aad matrices of the display, and three series K172 microcircuits to ~
4p
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~limin~e~ fal~~ 1i~heing in eh~ di~pl~y. $ogrd 1~1~o pruvidp~ a pi~c~
for mouneing eh~ p~r~r unie on di~cr~t~ ~~~tn~ne~. On bo~rd 2~hr@~ key-
bo~rd unie~ gr~ mo~need f~rming ~ ppgbo~rd;
VMlb-1 di~iE k~y~ ~nd d~cimai point
VM16�4 ~~,W~ ~ ~~-n ~ ux" ~ ~ttd i~,~t~ k~y~
VM16-6 u8~~ ~ ~~SK~~ ~ tlnd kaye
gnd eh~ pheea gen~raror in the form of ~ K1aF651 microcircuit.
B~~~d 2 a1~~ provides r~om for ~aunting ~ ph~~~ ~~n~r~tor m~de up of di~-
cr~etp ~ic~n?ente. ~o~rd i~nd bo~rd 2, forming ~ corebin~d unit, ~r+~ con-
n~cepd to ~geh oth~r with tao MRN-22 (5) typ~ cona~etora geegeh~d ro thp
~dgee of rh~ bo~rdg. Th~ canbin~d unit i~ attach~d to th~ ca~e by ecreWs
(oppniag 6) and is cioe~d with ~ cov~r which i~ gteach~d Co thp ca~~ with
- acr~W~ (op~nin~ Speci~l opening~ (8) gr~ provid~d in th~ c~ae ~nd
cov~r to permit the op~r~tor tn eAtablieh the a~c~ee~ry ang~e of inciin~-
tian of the machine to faciliente canpu~gtion of datg. Th~ open poeition
of th~ atand at th~ ~a~~ time improves heet exhaust fran the machin~ on
th~ sid~8 of th~ ca~p, On th~ fac~ ~id~ of th~ cov~r i~ located the oe-o.c
button (9), the pr~~~it~g of which op~n~ th~ cov~r (10) gnd p~rmite ace~a~
tu the digir displ~y (11).
COPYRIGHT: Isdatpl'etvo "St~ti~tika," 1978
8542
CSO: 1870
41
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PVBLICATIONB
UDC 621.791.4:621.771
ROLL WELDIN(} OF BIl~TALB
Mosaox BYARKA PAOKAT~COY BIt~TALLOV in Rusgian 19~7 pp 2~ 4-6~ -
157-158
GAz~r?otation~ Introduatiion and Table of Contents of book by
_ 80rgey Alekeandroviah Oolovazienko~ Izdatel'atvo Metall giya~
- aigned to preaa 31 Auguat 19~~~ 4~900 aopiea~ 158 peges~
~Text] AHHOTAT ION
The author diseusses the physiaoehemi~al proces~e$ taking place
in the sone x3~ere ttie materials are ~oined during the produc-
tion of bimetals bq hot and oold roll welding.
He describes the production proaesses imroived in obtaining bi-
met~?ls o! ~ariau~ types for varions purpoge~ as xell as ~he
prin~iples gov~rning the designing of aorros~on-resiatant bi-
~etals and the ~sleatian of mater~ais for the iatermediate lay-
�ra~ ~rhloh principles are based on a thsrmodyoasie aaalyaia ox
the ~arbou rediatribution proe~saes in the sone `rhere st~sia o! ,
di!lerent clssssa are ~Qinsd togethar.
This book is intended !or scie~tific and engineering and tech- ;
nical personnel apecialising in the production~ use develop-
ment~ and inveatigation of bimetals an~ cosponnd ma~er~sla !or
di!lerent purpo~ea. It oan alao be naetul tor stndenta and ~
- graduate studenta in teahatcal YOZ's. Illvstrations 69; tgbles
18; bibliography ot 148 titles. ~
IHTRODUCTION ~
The dsvslopme~t o! modern ts~hnology is ine~ctriaably related to :
the inoreasin6 use of inetailic saterials~ the requirements for
vhich lrom the vievpolnt of inanring rsliability and dwca- .
bility, economy and tscb~nalogica~. qualitiea are steadily in- ~
creaaing because of the inteasifica~iou o! tbermal. effects~ in- i_
creaaing n~eahanical loads and rorking medivm aggressiveneas~ '
nnd so oa. -
42 ~
FOR OPFICIAL U5E ONLY
. ;
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,
~ ; . . . , ~
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In partioular, th~ fnnetional aharaati~ri~tia~ of inetaill.a ma-
tarie?lg ~~?n be improved by the development and induetirial adop-
tion ol,biwetail~.o end ~ompogSt~ (e~mbined) materigls.
Bi~tiallie and multilaydr rolled gtoak ie one of the moat prn-
gresdive and eoono~ioai forms oP metallurgioal produotion~ ana
it i~ being uaed more end more aidely in many branehee of the
national e~onom~pr. The need for in~re~s3ag the volum~ ot its
produotiot~ ~nd enlerging ths assortneat of avail8bla produote
lollow~ from t~e aBSignment givs~? metiailurgl~te by th~ 25th
CP9U Congrea~r: to iaoreage the autput ot aPtectiive types of
mstel produot~.
O~ar the la~t deoade ~ the produatior~ and aot~umption of bi~
metalr in our.eotu~try hae inar~aeed bq 50 peraent. There has
been a p~rticularly ah~rp in~rea~e in the aonsumption ot tvo-
~ la~er aorroeion~resistant steei it hAe more than doubied.
At the prseent time the Qonawnption of bimetal ie relatively
small in aomparieon vith the total 8tee1 output (abaut 0.1 per~
aent)~ b~ut it piays a very large role. In conneetion ~rith
this bimetal aen be used both as a replaaement far uniform
' meta~s and aa a materi~?1 vith e ner? compisx ot hu~atiional or
ter.hnologiaal chara~texigti~a.
An e~te?mple of the creation of a new complea of properties by
combining ap~cieiiy seleoted steei~ is 8eif-aherpening sheet
and shaped bimetallie rolled gtoek. It ie nssd in a~rieultural
cultivatin~ and digging r~e?~hines. 8el!-sharpening dur~ng oper-
ation of s plo~~hare plox Qu].tivator blade~ ahallox plow
diak~ and so on~ is ~nsure~ as the resnlt nf the eharpiy dif-
fsrent rate of ~rear of t~he golt and hard layers tirhen the eoii
aot~ abraai~ely on the eutiting elemeat. The relationst~ip of
the bisetai aosponenta' xear rates must be determined esaatly~
and it depends oa the ~rear reaistance of the steels aad t~hsir
thickneaa. Sslf�aharpening of the elenenta o! soii-xorking aa-
chines uakea it possible to rednce expet~ss !or honing an,d re-
placing parts as ~neli as the farce reqnired that Sa~ tbe
aaovnt o! fae~ ~onamned during ploving~ anl.t~vating end oth~r
_ aoil work.
Anothsr eaca�pie of the nex ~ouplez of properties that are r~ai-
izsd in lsyered metallic materials are the so-csilsd thermo-
slsetic bimetals (or thermobimetala). These bisetals aonsiat
- o! txo layere o! stesla or elloys ~rith anbatantielly ditfer~nt
ooet~iaiants of thermal e~cpansion. Whsn a piece of the bimetal
is heated~ th~s lactor leads to con$iderable bsnding o! the bi-
_ metallic element~ vith the magnitude of the llexnre~depending
on t,~e heating temperature, These bimetallia elea~enta are
videly uaed in inatrnments for mesanring and regulnti.na
43
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~OR O~F~CiAt U5~ ONLY
t~~?peratnre ~?t~d proteatsng eleatriag~. oirauiti~ ~ro~ ovsrloAd~
ing~ s~ weli a~ othsr aimilar ~ritueti~on~.
Yn the eleotriQA1 ~ngineering induetry thsre is a aonet~n~ ~x-
psnnion of the uee of th~ efieat o! ~uperoonduativity~ r+hieh ~,s
a properby poffied8eed by a number of alioya of refrectory and
rare metale and their ~bsm~aai ooapoww~de ttbe iutsrmst~?llidee).
Copper is nat a auperaooaduator but~ g~aaaa it ba8 a high theredal
aonduoti~rst~r r~~~g rrhen st sa ao~bined v3,t~ a super~onduet~ve
~tariel it ie an i~eal etruaturel matsriel !'or tha oreation of
atrong ~agnetia fields.
Ail tbeae sxatiples eha? ho~w divar~ilied the tunotion~?1 propsr-
tiee o! bi~stale can be. ~
The davelopment ot bisstalg ~th a oosnpletely nex a~ti o! funo-
tiornai properti~~ i~ a promi~iag area.o! the modern soience o!
matsriols~ ainae it raieea th~ pogaibility of reaahin~ aom-
equipm~t and~instr~enta~~~~t~al dsoision~ tor ma~hinee ~
In thie book rre aorrslate the re~ults o! xork,dons by the anth-
or and hie Qo~+orkers at the Centrai 8aientific Research Iusti-
tute of Ferrous Metsilurgy imeni Y.P. Bsrdin and in the lsbora- t
torieg ~?t e number o! Soaiet metalinrgiaai planta uader produa- ~
tion oon~litiotss. IIse i~ also sads ot the aoat intereeting re-
sult?e publisb~d in periodi~ais. ;
The author `?ishee to esprees his gratitnde to Candidstes of
Tsahniaal 8oisnaea A.A. B~kov and I.Yu. Koanova~ s~ vell as to ;
engineer A.l~. Logvinovs~ for thelr great assiatana~ !n ths ;
preperation o! the ~usaript and the~r aatirre partioipation in
the disevsaion ot its 8eparate parts.
The suthor la indebtad to the colle~tive of the Bia~etals Labor-
atory o! the Central 8oientilio Rsss4rch Iaatitnts o! Ferrona ;
Ketaliur~r iasai I.~. Bardin !or ite aaaitana� in aondnatit~ ~
esporiaents.
!
TAHLE 0~' C OpTBNTB :
Ps~e ;
Introdnctioa . . . . . . . . . . . . . . . . . . . . . . . . 4 . i
;
Chsptsr 1. 'T1~sor~r and Teabnology o! Proaeasss for Prodnaiag
Lsyersd l~tstallic Msterisis . . . . . . . . . . . 7
1. aa~ral Inforsation and Claasiliaation of t~ethoda !or ~
Pralnoina LsTered Nateriaia . . . . . . . . . . . . . . ?
2. Theory ot th~ Joining of l~ietals in the 8olid Pbaae
Prodnatlau Proa~saes for Obtaining Bisstais. 23 i
,
44 ~
~ ~
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~Ott O~~ICtAt, US~ dNLY
P~ge
Produ~ing Himet~?ls by Hot Ro].1 Welding. 2~
Pruduait~ ~imetiale by Co].d Ro11 Welding . . . . . . . . 2
fihe Carting Method fnr ProducSng BSmetaig 29
The Eleatirie-Aro ~urt~o~,ng Me~hod . . . . . . . . . . . 31
Predu~Sng Bime~a~s by Explosive Weiding . . . . . . . . 31
4. ClassiPloa~ion of L~yer~d Metal~.so Materiels by Typee
8nd Areag of Utilization . . . . . . . . . . . . . . . 32
Methoda of Trsveatigating the 8tru~ture and Propertie~ 4
oP tihe ~r~?nsitionel ~ones o! ~imetals. , . . . . . . . 3
Opti~al M~etallography and El.eatron Mioroscopq 35
Measuring Miaroharaness . . . . . . . . . . . . . . . .
X-Aay Spe~trum Mi~roan~lysis . . . . . . . . . . . . . . 36
The RaBioaotive Tgotope ~iethod . . . . . . . . . . . . . 3
Meahanieai Tests . . . . . . . . . . . . . . . . . . . . 37
Chapter 2. 8tructure end Properties of Corrosion-Reaiatent 38
BimetAls . . . . . . . . . . . . . . . . . . . .
1. Corrosion-Regiatant Bimetals With e Cladding Layer of
Stainle~~ Steel . . . . . . . . . . . . . . . . . . . . 38
Corrogion-Aeaiatant Bimetals With ~ CladBing Layer of
08Kh13 and OSKh18N10(T) S~eela. . . . . . . . . . . . 40
� Corrosion-Reslstant Himetals W3th a Cladding Laqer ot'
o8~i7~r ana i5~257r steeis . . . . . . . . . . . . . . 53
2. Structure of Welded Joints in Bimetals With Cledding
Layerg of Nonferroua Metals and Their Alloys 59
Carbon 3tee1 + Copper . . . . . . . . . . . . . . . . . 59 _
Carbon Steel + Niatsel . . . . . . . . . . . . . . . . .
Carbon Stee1 + Niokel-Copper Alloy CMonel). 62
3. Selecting the Composition of Steels for Corrosion-
Res iatant Bimetals . . . . . . . . . . . . . . . . . . 65
Thermodynamies and Kinetics of the Redistribution of
Elements in the Transitionel Layer of Bimetals. 65
Elfect of Alloqing on the Diffusion of Carbon in Steela ~
Erfect of Alloying on the Activity of Carbon in 3teels.
Selecting the Compositiox~ oP the Interm~diete I.ayers
for Corrosion-Resistant Bimetals. . . . . . . . . . . 86
Selecting the Composition of 3teels for the Clsdding
I~ayer . . . . . . . . . . . . ~ . . . . . . . . . . . 106
4. Effe~t of Thermal Action on the Redistribution o! Car~
bon and thA Properti~es of Corrosion�Resistant Bimetals 112
5. aeneral Principles for Deslgning Bimeta~a With a
Stainless Steel Ciadding Isqer . . . . . . . . . . . . 118
Chapter 3. weer-Resistant and Tool Bimetals 119
1. Types of Wear-Resistant ea~d Tool Bimetals. 119
2. Produ~ing Wear-Re~istant a~nd Tool B~metals by Roll
Weidin~ and Extrusion . . . . . . . . . . . . . . . . . 122
3haped Himetailic Roiled Stock for 3e1!-Sharpening
~ Plowahares . . . . . . . . . . . . . . . . . . . . . . 122
45
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FtJit d~~ICiAL U~g dNt,Y
Pege
8hee~ Himo~al~ for Cultiive~or g~adee and Woodrrorking
T~alg . . . . . . . . . . . . . . . . . . . . . . . . l24 .
~haped ~nd Preseed gim~tialg ~'or Metal-Cutt3ng Toole end
- Traetor Pins . . . . . . . . . . . . . . . . . . . . . 126
- 3. ~eati ~reatment of waar-Regsetanti end Tool Bimetalg 130
Carbon Stie81 + Chrome-Yenadium 3tiee1 Bimetal. 13b
f~eat Treat~ent of Wsar ~tesistant and Taol sta~ls. i34
Chapter 4. Muitilayer and R~inforeed Metalli~ Matsr~a~~ 144
1. Muit~lgyer 8truetwrel Materials. . . . . . . . . . . . l44
2. Higb-Te~nperature Composite 1~?terial~ . . . . . . . . . 144
Bibliographq . . . . . . . . . . . . . . . . . . . . . . . . 151
COPYAIaHT ~ I~aatel ~ ~tvo "l~etallurgiya" ~ 1977
1174b
cao : 1870
46
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t~R d~~tCtAi, U5~ ONt,Y
PUBLICATIONB
tr~nc 62L.o39.5.o53~~aL.o39.553.36
CORROBION 0~' BTAUC~tAL MATERIAIS IN MOLTEN ALICALINE 1?~~AL9
KoBeoti KOAAO~IYA KONSTA~BIO~NY'KH MATERIAI,OY V 7~iIDK~I~ SHCHE-
LOCbNY~i 1~1:2ALLOV in Ru~t e 3+~ri 1977 PP ~-l+~ ~ 262 -263
~Annotation Foreaord a~ Table of Content~ of bookby Borie
Alekeandro~r~oh Nev~orav~ Vitaliy Ya~il' qeviah Zoto~r Vl~dln~ir
A].ekseyevich Ivanov~ Ole Viktorovieh 8tarkov Niko~.ay Dmi~ri-
yeviC~ Kreyevi Yevgebiy ~asil'qev~eb U~yr~shk~.n and Ylediglev
gleksandroviah 8o1ov yev, I~cdatel atvo Atooisda~~ signed to
, preas 17 Maq 19~'!~ 2i320 aopies~ 264 pege~]
(T~~ct ) ANNOTATION
The authors present primarily orlginal experimet~t~l and theo-
ret~cal meterial on the ~orrosiqe interaction of structural
ateels and ailoys vith molten alkaline heat-trensfer agents
~sodium~ aaliun-potaasium alloy and lithiwn). The kineti~n of
their intsraotion are deseribed~ and there is a discuesion ot
dilfer~nt modela oP the mags trangfer proc~sa in a nont~othern-
ia a~rouit syst�ti. fihe author$ svalnate the ba8ic faetore af-
fe~ting tho msaa transfer process su~h as the heat-trenst'er
agent's rate of movement' tempera~ure ilox rate~ the geo~etry
of ths staad~ and others. They eacpla~n the ba~sie prinaiple~ of
the allaying o! steela for the purpose o! redueing their rate
ot dissolution in alkaline metais.
Thie book is intended for the uae ot acientific workera and
speciali~ts on aorrosion and t~he acienca of materiela, as rrell
as tor teatu~ologista~ developer~ and planners xorking in the
lielas of atonie and paw~er engineering. Figures 88; t~bles ~1;
bibliogrsphy of 254 titles.
FOREWt~tD
B.A. Hevsorov's book "Co~roslon of Strnctural Materials in So-
din~a~" r+hi~h vaa beeieally devoted to the ezperimeutal study of
the meaban~sms o! Qorrosion~ waa publiehed in 1968. Usit~g
47
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aodium a~ ~?n ex~?mp].e he developed a phy~iaoohemi~a~, approach ~
to ~he eapiana~ion o~ th~ etfeet on aorrogion of gueh nonmetai-
l~e impuri~ieg as oxqgen and hydrogen. In the book ha pregent~
ed the reeul~~ of aorrosion tests and inveat3gations of the _
bas~.a R1a8888 of strueturai ma~erials in a sodium heat..transter
agent for ~he purpoge ot' studqing the mechaniam of aorroa ion~ -
as we11 as to eatabligh ~he reletionship between the corrosion
reeietenae of materiale and their ohemi~al eompoeition.
The preaent book~ whiah iras w?ritten by a large colleetive of
authors~ retaina aom~ of tYie continuity o! the 1968 book, but
at the eame time i8 more mult3laceted with re8pea~ to the tech-
niquea used in the investigations and includea neW theoretiaal
developtnents and correlationa.
The aollective of authors that worked on this book cor~eiders it
it$ duty bo emphaaise thet in the development of the gcien~e of
materieln for hlgh-temperature, molten metal h~at-trangfer
agents~ Do~tor of Chemi~~i Saienees Profeseor Vasiliy 3awieh
Lyeehenko n~de a aignifioaat pioneering contr3bution. Besides
thiss it is neaessary to mention that the research d3scuased in
this book xas gtimulated by the ~onetant intierest in the study
of the behevior of ~tru~tural materials in molten metal heat-
transfer agents that was szpressed by A.I. Leypunskiy~ ecademi-
cien of the Ukrainian 88R Ac~demq of Scisnce~. ~
, ;
During the per3od ~+hen this book was being prepared for publi-
cation~ Doctor of Te~hni~al 3ciencea ProfeBSOr B.A. Nevzorov a
leading apeoialiat in the aorroaion o! etruotural materials ~n
molten me~al hest -transfer agenta, died. Research in the cor- .
ro~ion of struatural materiaT.~ in sod3um wae begun in our coun- ~
try by a ~olle~tive of rrorkera led by V.B. Lqa~henkca and B.A. ~
Nevzorov. Simultanean$ly vith the development of testing meth- '
ods and the mastery of the te~hnology and techniquea !or xork- '
ing wi.th a heat-tranaler agent eo urntsual in poxer engineering :
sa moltea aodium~ B.A. Nevs~orov's initiative led ta the begin-
= ning of research in the phqaico~hemical phenomena and processes
taking p~iacs in a structurel material-sodium system. The col-
lective e a~hievements in studying the corrosion meahenisms o!
stru~tural materials in molten metals and ia recognizing the ;
general regularities of corrosion processes were largely deter-
eiaed by the lruitful creative leaders~ip of B.A. Nevzorov. -
The authora dediaate this book to the memory of these scien-
tiats.
TABIB OF CONTENTS :
Page
Forevord . . . . . . . . . . . . . . . . . . . . . . . . . . 3 .
48
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~ Pe~ge -
_ Chapter l. 4eneral Information and Seientific Concepts
Abou~ the Corroaion of S~ructural Materials in
Molten Metal Heat-Transfer Agents. . . . . . . . 5
- Chapter 2. Phys~,cal Rules of the Corrosion Processes in
~ Molten Metal Heat-Transt'er Agents. . . . . . . . 30 -
2.1. Forn~ulation of the Problem . . . . . . . . . . . . . 30
2.2. Factora Affecting Corrosion in Molten Metal Heat-
Transler Agents . . . . . . . . . . . . . . . . . . . 31
2.3. 3olubility IInder Isothermal Conditions . . . . . . . 35
2.4. Effect Qf the Duration of Tests on the Corrosion of -
- Materials. . . . . . . . . . . . . . . . . . . . . . 39
2.5. The Dif~`asion Layer in Molten Metal. 42
- 2.6.~ Kinetics of the Disgolution and Mas~ Transfer of
Pure Metals IInder Nonisothermal Conditions 46
2.7. Kine~ics of the Mass Transfer of Selectively Dis-
~olving Steels and Alloys . . . . . . . . . . . . . . 51 -
- 2.8. Temperature Dependence of Mass Transt'er Under Non-
isothermal Conditions. . . . . . . . . . . . . . . ?0
2.9. Effect of the Heat-Transfer Agent's Flow Rate on
Corros'ion and Mass Transfer . . . . . . . . . . . . . ~6
~ 2.10. Some Regularities in the Dissolution and Mass Trans-
fer of Austenitic Steels in a Nonisothermal System 8~
With a Sodium Heat-Transfer Agent. . . . . . . . . . -
Chapter 3. Eaperimental Inv~~tigations of the Corrosion of
3tructural Materials . . . . . . . . . . . . . 0 88
- 3.1. Corrosion Resistance of Heat-Exchange Pipes of
1Kh18N10T Steel When in Contact With ].Kh2M Steel in
a Sodium Heat-Transfer Agent . . . . . . . . . . . . 88
3.2. Research in Ferritic-Perlitic S teels and the Pros-
pects of Using Them in ~the Steam Generators of AFS's
With a Sodium Heat-Transfer Agent. . . . . . . . . . 101
_ 3.3: Investigation of the Effect oP the Chemical Composi-
tion of Austenitic Steels on Dissolution and Mass
Transfer in Sodium. . . . . . . . . . . . . . . . . s 110 -
3.4. Research in the Corrosion of 1Kh18N10T Steel in So-
_ ~ dium With an Increased Oxygen Content. . . . . . . . 121
3�5� Research~in the Corrosion o~' Austenitic and Chromivm
Steels in a Sodlum-Potassium Alloy Flow. 124 .
3s6. A Study af the Rules Governi~g the Dissolution of ~
Pure Nickel in Lithium . . . . . . . . . . . . . . . 132
3.7. Kinetics of a-Phase Formation in Austenitic Steels -
as They Corrode in Lithiwn . . . . . . . . . . . . 136
Chapter 4. Eaperimental Investigatioa of the Ru1es Govern- -
~ -1ng Carbon and Nitrogen Transfer in OxygEn- ~
~ Hydrogen Corrosion . . . . . . . . . . . . . . . 140
49 . ~
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- Pag~
, 4.1. Inveetiget~on of the Regularitiee of Carbon ~ranefer ~
in 8 od lum . . . . . . . . . . . . . . . . . . . . . . 140
Thermodynamic Analy~ia ot Carbon Tran$ter 14].
Kinetic Factora of the Carbon Transfer Process. 149
- ~echniquos for Investigating Carbon Trenefer e?nd e Ae-
vierr of tihe Data Sn the Literature. 158
Kine~ic and Temperature Depen~deneee of the Carboni~a-
tioa of 8tructiural M~teria].s . . . . . . . . . . . . . 166
- Cb~nge in the M~ecbanical Prop~rtiee of Gteels in Con~
nection W1,th Carbonization in Bodium. . . . . . . . . 1.~7 -
Redi~tribution of Carbon in Systems . . . , . . . . . . 1 2
The Mechanism of Carbonization of structurel Ma~erials. 186
Aggressiven8es of Carbon~Containing Impurities in Bodi-
um ..........................i9i
Effect of O~ygen-Con~aining Impuritiea on Carbon TrgnB-
fer . . . . t . . . . . . . . . . . . . . . . . . . . i9~
On the Mechanism of Carbon Tranefer in 8odium 205
- Evaluating the Cerbon Transter Proceee in e BN-350
Power Planti � � ~ � � � � � � � � ~ � � � � � � � � �
4.2. The Nitrogen Transfer Proaesa in ~ 8odiut~ Hest-
Trans fer Agent . . . . . . . . . . . . . . . . . . . 214
Thermodynamic end KinetiQ Propertiee ot Nitrogen in
Metais . . . . . . . . . . . . . . . . . . . . . . . . 214
Nitri8ing of Bteele in ~ Sodium-Nitrogen Syetem 218
_ On Evaluating the Alloweble Nitrogen Content. 220
_ Nitriding oi' 8teels in 8 odium With an Aamiature o! So- -
dium Nitrate . . . . . . . . . . . . . . . . . . . . . 222
4.3. Effect o! Pot~eaiwn and Calciwn Impuritiea l,a~ 8odiwa
on the Kinetics of Carbon Transier to lI'~i18NlOT
- Staina.es~ 8tee1 . . . . . . . . . . . . . . . . . . . 224
4.4. On the Mechanism of Ozygen Corroaion of Btructural
Materials in a 3odium Heat-Traasfer Agent. 230.
4.5. A 3tudy of the Corrosion ot Btruotural l~taterie~la in
Sodium With Increased O~rgen and Hydrogen Contsnts . 242
Concluelon. . � � � � � � � � � � � � � � � � � � � � � � � 2~~j
Bibl Sography . . . . . . . . . . . . . . . . . . . . . . . . 24?
COPYRIaHTs Izdatel'stvo "Atomizdat"~ 1977
- 11746
- CS 0 s 1870
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~
~Ok tl~~ICIAL U5~ hNLY
PUBLICATIONS
TABL~ d~ CONT~NT5 NEtOM JOUItNAL '~XPLORATO1tY GEOPliY5IC5'
MoecoW ItAZVEUOCHNAYA GBOFI2IKA in Ru~ofan No 79, 1977 eigned to press 26 Aug
77 pp 164-165
[Table of contents from publicatfon edited by V. Yu. Zeychenko~ Izdatel'etvo
Nedru~ 2,800 copies, 169 pagea)
(T~xtj Contente Page
Kate~ 5. A. "Kinematic Analysie 1'hrough a System of Adaptfve Filters" 3
~ Kgraeik~ S. M.; Kate~ S.A.; and Sokolov~ S. V. "Sampling of the Kine-
matic Analyais Method Thr~ugh a 5ystem of AdapCive FflCera in an `
Area of Complex Tectonica" 9
- Rapoport~ M. B.; and Karapetov~ K. K. "Extremum Algorfthms and Struc-
tural Progreme for Seiemic Displ~ys" 14
Portnyagin, N. N.; Itapoport, M. B.; and Ryzhenkov~ V. N. "DigiCal
Correlatfve Counter for the Mean Period of Sefamic Oscillations" 20
Frolovfch, G. M.; 2hdanov, A. I.; and Shevchenko, A. A. "Concerning
the Influence of Curvature of Reflective Edgea" 23 _
Kofsman, S. M. and Kopflevich, Ye. A. "Optical Piltration of Sefamic
Profiles Through Half-Tone Screene" 32
Starodubrovekuya, S. P.; Gamburt~ev, A.G.; Saks, M. V.; and Afim"ina,
T. V. "Experfinental Inveotigatfon of the Regfon and Wave Fields in
- F'raature Zonea (for example along the middle Volga)" 36
Gamburtaev, A. G.; Kuznetsov, V. V,; Lavrov, V. S.; Seval'nev, A. V.;
and Burdina~ N. A. "A SelecCioe Experiment and Analysis of Waves
Associated With Buried Fracture Zones (acrording to data on rift
obaervatioa~)" 45
Krylov, I. B.; Kuzne~sov, V. V.; and Rotfel'd, I. S. "The Applica-
tion Results of Multfple-Factor Analysis in Vibro-Seismic Explora-
tion" ~ 52
51
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~OCt O~~tCtAL U3~ ONLY
(ioryunov, C. p.~ Kortygnovich~ M. N.; ~nd Troygnekgya, I. Yg. "The
Haoio for rha 8~leceion of Ob6erv~Cion Syerems by MOGT (Moecow
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Alekeandrov~ V. K. "Nomogrume for PYOCessing Seigmic togging Data" 67
Dorman~ M. I. "Inveetiggtion of the Nigh-5peed Characteristice of
the Mezozoic Covering of Che Vflyuyskoy Synectis~" 70
Komfsaarchik~ S. 5. "A Method for Investigating the Tectonic Struc-
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Kfstinev, V. i. and Kozlov, B. G. "The ~eologfc and Tectonfc Struc-
ture of the Northweerern Parr of the Kos'yu-Rogovgkiy Baein
According to the Data from the Seismic ~xploration Operatfons of
MOV (reflected wave methodJ" 89
Danilina~ G. S.; Zhuravlev~ A. S.; and Mirandov~ V. L. "Bxpeximent ,
with the Lfthologic-5trarigraphic Analysis of the Porous Sea
D~positions by 3eiemo-Acouetical Methode" 93
Kamenetskfy, P. M. and Mukhina, N. I. "An Evaluation of the Influence
of Field HeterogenefCy on the Tranefent Proceea in a Loca1 Conduc-
tor" � 102 ,
Svetov, H. S.; Khalf~ov, A. L.; and Prfetavakina~ Ye. I. "A Complex '
Interpretation of the Cain-Phase Frequency Characterietics of ~
Apparent Impedance in the Magnetotellurfc Souading Method" 106
Gur'yev, Yu. K. and Brus'yanin, L. A. "A Calculation of the Influ- -
ence of Local Topography on the TT ~theoretical plate] Pield in
the South Orenburg Graben Zoae" 113
2namenskaya, K. F. "An Experiment fn Tracing Deep Fractures fn
the Pripyatokfy Depreasion Based on an InterpretaCion of Gravi-
Magnetic Fielde" 119
Viehaevskfy~ Y. V.; i'inyagina~ L. V.; Khabibullina, F. S.; aad
Bol'shov, V. A. "An Inveetigation of the Karat Formation of ~
Carbonaceous Rock Depoeite Through Geophysical Methods" 130 j
Kirshfel'dt, Yu. E. and 2orin, Ye. Z. "A Technique for Prospec- ~
tiag for Oil Deposits in Carbonaceoue Reservofrs in the Upper ;
- Tablee of Operating Sites" 137
Krivko, N. N. and Rezvaaov, R. A. "The Influence of Clayinesa and ~
and Gypsum in Mountain Rocks on INM-KV Results" 141
52
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APPROVED FOR RELEASE: 2007/02108: CIA-RDP82-00850R000100010054-0
~Oit UFFICLAL US~ nNLY
~eloray~ Ye. L.; Karpove~ M. V.; ~nd N~retin~ V.U. "Monitoring the
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Through the Nuclaar Magnatic ~eeonanc~ Method" 147
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a Strntum Through INNK [puloed nQUtron-neutron logging~ and INCK
~puload nautron-gamma logging) Mathoda" 151
Kondaurova~ N. V. and Laviron~ M. Ys. "A Current Structural Plan
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Accordfng to Data from Saismic ProspecCing and Ueep Boring" 160
COPYRIGHTt Izdatel'~tvo "N~dra"~ 1977
9082
CSOa t870 END
53
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