TECHNICAL EXAMINATION OF GERMAN TRANSISTORS

• Document Type: CREST
• Collection: General CIA Records
• Document Number (FOIA) /ESDN (CREST): CIA-RDP80T00246A000400190001-6
• Release Decision: RIPPUB
• Original Classification: C
• Document Page Count: 59
• Document Creation Date: December 27, 2016
• Document Release Date: November 12, 2013
• Sequence Number: 1
• Publication Date: January 6, 1964
• Content Type: REPORT

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9
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CENTRAL INTELLIGENCE AGENCY 50X1-HUM
50X1-HUM,
,:fh'is Material contains information affecting the Notional Defense of the United States within the meaning olit
F' 9 S,
18, U.S.0 Secs. 793 and 794, the transmission or revelation of which in any manner to an unauthorized person is proh1kt.4 ks,
C ONFIDENTIAL
. NO FOREIGN DISSEM
trtsfttAermany (MR)
.SUBJECT Technical EXamination of German
Transistors
DATE OF
INFO.
PLACE &
DATE ACQ.
REPORT
DATE DISTR.
t4rX PAGES
. REFERENCES
6 January 1964
43
THIS Is UNEVALUATED .INFORMATION
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For ease of discussion, we have numbered the samples
individually from 7 through 16.
a.
5
4
3
2
1
MN 19328 (7 and 8) - TWO low-frequency, germanium, pokier trans-
istors, produced during August 1960 at the VEB RFT Ftudcwerk Kolleda,
Germany (DDR) for use in driver stages of unidentified equipment.
EXceptionally low noise characteristics were claimed. -
b. _NCN 19329 (9 and 10) - Two low-frequency, germanium, power transis-
tors, produced as for NCN 19328, but for audio amplificatiOn.
c. NCN 19335 (11 and 12) - Two Radio-frequency, germanium tranSis-
tors, produced daring September 1960 at the VEB RFT Funkwerk K011eda;
it is claimed that these devices' are "'velocity modulated". 7
d. NCN 19336 (13 and 14) Two Radio-frequency, germanium transis-
? tors, produced as for MN 19335, but for I.F. applications.'
e. NCN 19337 (15 and 16) - Two Radio-frequencyvgermanium transis-
tors, produced as for NCN 19335.
2. Examination and teats of these sample's have revealed the following:
a. NCN 19326 - These are low-frequency germanium transistors with 67
mw power capability (determined with 4500 ambient temperature
in accordance with European practice). Structurally, these deVices -
are identical with the OC 304 manufactured by Intermetall?,Fteiburg
Brag. West Germany; electrictoly they meet Intermetall specifications
for the .00 304/2.
b. NCN 19329 - These are transistors in cases like those used for the
OC 318 by Intermetall (with which an aluminum cooling fin is usually
supplied). The construction is typically Intermetall and the devices
conform to Intetmetall characteristics for the OC 318 When measured
without the usual cooling fin.
CONFIDENTIAL
0 BEI MIS
8110V 1
Excluded fres asissatIc
downgrading and
deciasslicatien
STATE
ARMY
NAV
A,
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I I
DISSEM: The dissemination of this document is limited to civilian employees and active duty military personnel within the intelligence components
of the USIB member agencies, and to those senior officials of the member agencies who must act upon the information. However, unless specifically controlled
In, accordance accordance with paragraph 8 of DCID 1/7, it may be released to those components of the departments and agencies of the U. S. Government directly
participating in the production of National Intelligence. IT SHALL NOT BE DISSEMINATED TO CONTRACTORS It shall not be disseminated to organiza-
Oohs or personnel, including consultants, under a contractual relationship to the U.S. Government without the written permission of the originator.
50X1-HUM
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c. MCN 19335 - These are PNP germanium transistors, essentially
identical with the AF 111 manufactured by Intermetall; there
are slight differences in the execution of the base tab*construc-
tion such as might occur through evolution in refining or adapt-
ing production processes. Electrically, the samples conform to
AF 111 specifications.
d. MCN 19336 - These are identical in structure with the GFT 20
manufactured by Tekade, Nurnberg, West Germany. Poor electrical
characteristics and especially the high leakage current of trans-
istors 13 suggest that these are defective or reject devices. Power
dissipation would appear to meet GFT 20 specifications.
? MCN 19337 - These are identical structurally with the Tekade GFT
44/15; they conform with GFT 44/15 electrical specifications.
3. The external appearance and internal structure of the sample devices
and of various Tekade and Intermetall transistors with *doh -they were
compared are ILlustrated in figures 1 through 14. Pertinent Intermetall
specifications are reproduced as figures 15 through 17. Pertinent
Tekade specifications are reproduced as figures 18 through 20.
4. Measured parameters have established that all of the sample devices
are of ."entertainment" grade. The gist of these measurements is
presented in Tables I through III.
a. Table I reports breakdown characteristics for samples Irthrough
16 at room temperature.
b. Table II presents small signal parameters for samples 7 through
16.
c. Table III reports thermal resistance and free air dissipation
for devices 7, 8, 9, 10 and 14.
)
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TABLE I
Room Temperature Breakdown Characteristics
Device
BV 21
CBO
BVEBOL/
MCN 19328 #7
54v
86v
MCN, 19328 #8
50
54
MCN 19329 #9
120
118
MCN 19329410
90
120
MCN 19135 #11
52
2.3
MCN 19.335 #12
66
3.3
MCN 19336 #13
3/
MCN 1933641.4
66
MCN 19337 #15
64 '
68
MCN 19337 #16
49
42
BVCBO and BVEBO are measured from the swept V-I curves at the point where the
slope of the curve is 10 K ohms. This value is used in this laboratory as a
measure of breakdown voltage whenever it occurs before an estimated safe power
dissipation is exceeded.
y Transistor 13 was defective.
11/ Measured at 50 mw power dissipation as device did not reach 10 K ohm slope.
7 3 -
C ONFIDENTIAL
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TABLE II
SMALL SIGNAL PARAMETER MEASUREMENTS
Bias. Conditions Ic = 1.0 ma, = 5.0 y, f = 1.0 Kc, TAME = 24.8?C
Parameter
fb
fe
(calculated from
hfb/1 + h )
MCN 19329 #9
fb
MCN 19329 #10
Device Measured Value
mcisi 19328 #7
MCN 19328 #8
MCN 19329 #9
MCN 19329 #10
MCN 19335 #11
MCN 19335 #12
MCN 19336 #13
MCN 19336 #14
MCN 19337 #15 ?
.MCN 19337 #16
MCN 19328 #7
MCN 19328 #8
flafb
MCN 19335 #11
MCN 19335 #12
MCN 19336 #13
mcii 19336 #14
MCN 19337 #15
MCN 19337 #16
MCN 19328 #7
MCN 19328 #8
MCN 19329 #9
MCN 19329 #10
MCN 19335 #11
MCN 19335 #12
4 _
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0.982
0.982
0.986
0.990
0.973
0.973
0.79
0.66
0.982
0.981
55.8
54.9
72.5
97.0
36.0
35.9
3.7
1.9
53.3
50.5
13 MC
0:86
1.4
1.9
49.0
48.7
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TABLE II (Cont'd)
SMALL SIGNAL PARAMETER MEASUREMENTS (Coned)
Bias Conditions Ic =1.0 ma Vc =. 5.0 v, f = 1.0 KC, TAME= 24.8oC
Parameter'
Device Measured Value
MCN 19336 #13 14
MCN 19336 #14 0.93
MCN 19337 #15 8.6
MCN 19337 #16 12.0
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TABLE III 50X1 -HUM
THERMAL RESISTANCE MEASUREMENTS
Device Thermal Resistance
Oil Bath Free Air
oc/w ocm
188 :440
219 432
MCN 19329#9i 60 /96
MCN 19329 #10 - 87 2/6
Free Air Dissipation 5/
45?C ambient
25?C ambient
mw
mw
68
114
69
116
153
255
137
231
68
114
5J Calculated value based upon amaximum junction temgerature of 75?C. The
45?C ambient is the standard in Europe and the 25 C ambient is the standard
.in the. J5
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Figure I
Item MCN 19328 as it appeared upon receipt.
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Frati210 ATSSEM
Figure
2
Three views of MCN 19328 #8 after removal of the cap.
Above: Two overall views showing the emitter side on the left and the
collector on the right. Magnification 11 X (10 div/mm)
Below: View of tab showing heavily etched die and the collector dot.
Magnification 17.5 X (16 div/mm).
-8' ?
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Figure 3
Two views of interior of Intermetall OC 304/3
Above: Overall view of interior for comparison with upper
photographs of Figure2.. (Magnification 11 X (10 div/mm)
Below: View of tab showing heavily etched die and collector dot.
Magnification 17.5 X (16 div/mm)
?
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Figure 4
Item MCN 19329 as it appeared upon receipt.
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FIGURE 5
Item MCN 19329 #9
ABOVE: Two views of the two layer cap
LEFT: End view showing thin inner layer and heavy outer layer. Cause
, of cracks is unknown, see text. Magnification 11 X (119 divIrma
RIGHT: +Longitudinal Section showing how outer layer had been hollowed
to fit over inner cap. Magnification 7 X (6 div/mm).
BELOW: Two orthogonal views _of the transistor after removal of the cap.
Magnification 6.5 X (6 div/mm).
40 50 0-* 80 90
40 50 6 0 80 90
- -
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-Yigure 6
Two Close up views of interior of Item MCN 19329 #9. Magnification
175:)C (16 div/mm)
AipoVe?::' Die and collector dot.
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Figure
Item MCN 19335 as it appeared upon receipt.
'
CONIVIDEETIAL'.
110 P'OREICEI DISSEM
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41.0mAam.hi
NO FMB= =SSW
1111.141111111d 11111131 V.P1111
Figure 8
Item MCN 19335 #11 with cap removed
Above: Overall side view. Magnification 11 X (10 div/mm)
Below Left: View of die, collector dot, and lead. Magnification
17.5 X (16 div/mm)
Below Right: View of emitter dot and lead. Magnification 17.5 X
(16 div/mm)
N1111,1' 41'1' 111111+
'
111111111.1.11'1'1'11'1[110 i1.11
41:) 113
11 0 I FL1 h.L1.111:1 I
g!)
/1/_
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Figure 9,
Three interior views of an Intermetall AF111
Above: Overall side view. Magnification 11 X (10 div/mm)
Below Left: View of die, collector dot and lead. Magnification
17.5 X (16 div/mm)
Below Right: View of emitter dot and lead. Magnification 17.5 X
(16 div/mm).
-
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Figure 10
-,A transistor of Item MCN 19337 as it appeared upon receipt. Item
? MCN 19336 had an identical appearance.
? -
C ONF 'DEN TIAL
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x A , A A JJ
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Figure 11
Two interior views of MCN 1.9336 #I3. Magnification 17.5 X
.-(16 div/mm)
Above: Die and collector dot.
Below: Support tab and emitter dot.
/7-
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Figure 12.
Two interior views of a Tekade GFT 20/15 for comparison with
Figure ft of MCN 19336. Magnification 17.5 X (16 div/mm)
-1/-
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.2.451 Lu
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Figure "13
Three interior views of MCN 19337 #15. Magnification 17.5 X
(16 div/mm)
Above; Side view showing general structure.
Below Left: Tab, die, collector dot and lead.
Below Right; Back of tab, emitter dot and lead.
- / 7 -
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Figure 14
Three interior views of Tekade GFT 44/30.
Magnification 17.5 X (16 div/mm)
These three photos show the same views as shown in Figure i3 for
MCN 19337 #15.
0 -
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10 FONNIM1 Doom
c.. 3 n
r, 1, 0c 304/1,2 u. 3
j L LJL
?
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PNP-GERMANIUM-STANDARD-TRANSISTOREN
NF-Vorstufen, NF-Oszillatoren, Steuer- und Regelanlagen
Kennwerte in Emitterschaltung:
bei -Uces 5 V, LE= 1 mA, f 1 kHz, T = 25oC
umg
Eingangswiderstand h11
1 Spannungsrtickwirkung
OC 304/1
1200
h12 4 x 10-4
Stromverstarkung .? 40
( 30... 40 )
Ausgangsleitwert h22 .22 x 10
.Grenzfrequenz f 20
. fs
Leiptungsverstiirkung
bei R a 6000, RL= 30 kQ
Kollektorreststrom
CB 0
- 5 V
OC 304/2
1650
6,5 x 10-4
65
(50...80)
35 x 10-6
14
4;
0,968)
Kollektorreststrome
bei . Lid) ? 15 V co = 10 (0,1) mA
le ? ^ 20 (>10)
0,953 (>0,910)
a b
Ico '" ?10 (